Continuous analyticⅠ-Ⅴmodel for GS DG MOSFETs including hot-carrier degradation effects

We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate （GS DG） MOSFET device. Our analysis is carried out by using an accurate continuous current-voltage （I-V） model, derived based on both Poisson＇s and continuity equations without the need of charge-sheet approxi- mation. The developed model offers the possibility to describe the entire range of different regions （subthreshold, linear and saturation） through a unique continuous expression. Therefore, the proposed approach can bring consid- erable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects.

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack(TMGS) DG-MOSFET

In the present work, a two-dimensional（2D） analytical framework of triple material symmetrical gate stack（TMGS）DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using 2D ATLAS;device simulator to affirm and formalize the proposed device structure.

Analytical Modeling of Threshold Voltage for Double-Gate MOSFET Fully Comprising Quantum Mechanical Effects

The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.The non uniform potential in the channel is concerned with an arbitrary depth so that the analytical solutions agree well with numerical ones.Then,an implicit expression for electron density and a closed form of threshold voltage are presented fully comprising quantum mechanical (QM) effects.This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region.However,it becomes independent on channel depth in strong inversion region,which is in accordance with numerical analysis.It is also concluded that the QM model,which barely considers a box like potential in the channel,slightly over predicts threshold voltage and underestimates electron density,and the error increases with an increasing channel depth or a decreasing gate oxide thickness.

On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile

An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel. The present model is valid in linear and satura- tion regions of device operation. The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect. Parameters like transcon- ductance and drain conductance that are important in assessing the analog performance of the device have also been formulated. The model results are validated by numerical simulation results obtained by using the commercially available ATLAS^TM, a two dimensional device simulator from SILVACO.

Quantum mechanical compact modeling of symmetric double-gate MOSFETs using variational approach

A physics-based analytical model for symmetrically biased double-gate（DG） MOSFETs considering quantum mechanical effects is proposed.Schrodinger＇s and Poisson＇s equations are solved simultaneously using a variational approach.Solving the Poisson and Schrodinger equations simultaneously reveals quantum mechanical effects（QME） that influence the performance of DG MOSFETs.The inversion charge and electrical potential distributions perpendicular to the channel are expressed in closed forms.We systematically evaluated and analyzed the potentials and inversion charges,taking QME into consideration,in Si based double gate devices.The effect of silicon thickness variation in inversion-layer charge and potentials are quantitatively defined.The analytical solutions provide good physical insight into the quantization caused by quantum confinement under various gate biases.

A fuzzy-logic-based approach to accurate modeling of a double gate MOSFET for nanoelectronic circuit design

The double gate （DG） silicon MOSFET with an extremely short-channel length has the appropriate fea- tures to constitute the devices for nanoscale circuit design. To develop a physical model for extremely scaled DG MOSFETs, the drain current in the channel must be accurately determined under the application of drain and gate voltages. However, modeling the transport mechanism for the nanoscale structures requires the use of overkill meth- ods and models in terms of their complexity and computation time （self-consistent, quantum computations ）. Therefore, new methods and techniques are required to overcome these constraints. In this paper, a new approach based on the fuzzy logic computation is proposed to investigate nanoscale DG MOSFETs. The proposed approach has been implemented in a device simulator to show the impact of the proposed approach on the nanoelectronic cir- cuit design. The approach is general and thus is suitable for any type ofnanoscale structure investigation problems in the nanotechnology industry.