为解决城市热岛效应研究中热岛强度定量计算的难点问题,将气象学上的温度日较差(diurnal temperature range,DTR)概念引入遥感城市热岛强度定量评估中,通过对热红外影像的日夜温度差计算,得到基于遥感的DTRMODIS.结果显示:DTRMODIS从200...为解决城市热岛效应研究中热岛强度定量计算的难点问题,将气象学上的温度日较差(diurnal temperature range,DTR)概念引入遥感城市热岛强度定量评估中,通过对热红外影像的日夜温度差计算,得到基于遥感的DTRMODIS.结果显示:DTRMODIS从2001年的10.61℃减小至2013年的9.47℃,12年间缩减了1.14℃,表明中国东部沿海地区热岛强度不断增加.同时,利用基于气象站气温数据的DTRWS对DTRMODIS进行回归分析,揭示二者之间具有较显著的相关性,证明利用遥感热红外影像估算研究区DTR的可行性.展开更多
s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests ...s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.展开更多
文摘为解决城市热岛效应研究中热岛强度定量计算的难点问题,将气象学上的温度日较差(diurnal temperature range,DTR)概念引入遥感城市热岛强度定量评估中,通过对热红外影像的日夜温度差计算,得到基于遥感的DTRMODIS.结果显示:DTRMODIS从2001年的10.61℃减小至2013年的9.47℃,12年间缩减了1.14℃,表明中国东部沿海地区热岛强度不断增加.同时,利用基于气象站气温数据的DTRWS对DTRMODIS进行回归分析,揭示二者之间具有较显著的相关性,证明利用遥感热红外影像估算研究区DTR的可行性.
文摘s:A detailed description of relaxation spectroscopy technique under direct tunneling stress is given.A double peak phenomena by applied relaxation spectroscopy on ultra thin (<3nm) gate oxide is found.It suggests that two kinds of traps exist in the degradation of gate oxide.It is also observed that both the trap density and the generation/capture cross section of oxide trap and interface trap are smaller in ultra thin gate oxide (<3nm) under DT stress than those in the thicker oxide (>4nm) under FN stress,and the centroid of oxide trap is closer to anode interface than in the center of oxide.
