Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Emission and capture characteristics of a deep hole trap(H1)in n-GaN Schottky barrier diodes(SBDs)have been investigated by optical deep level transient spectroscopy(ODLTS).Activation energy(Eemi)and capture cross-section(σ_(p))of H1 are determined to be 0.75 eV and 4.67×10^(−15)cm^(2),respectively.Distribution of apparent trap concentration in space charge region is demonstrated.Temperature-enhanced emission process is revealed by decrease of emission time constant.Electricfield-boosted trap emission kinetics are analyzed by the Poole−Frenkel emission(PFE)model.In addition,H1 shows point defect capture properties and temperature-enhanced capture kinetics.Taking both hole capture and emission processes into account during laser beam incidence,H1 features a trap concentration of 2.67×10^(15)cm^(−3).The method and obtained results may facilitate understanding of minority carrier trap properties in wide bandgap semiconductor material and can be applied for device reliability assessment.

Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells

It is well known that preparing temperatures and defects are highly related to deep-level impurities. In our studies, the CdTe polycrystalline films have been prepared at various temperatures by close spaced sublimation （CSS）. The different preparing temperature effects on CdS/CdTe solar cells and deep-level impurities have been investigated by I-V and C-V measurements and deep level transient spectroscopy （DLTS）. By comparison, less dark saturated current density, higher carrier concentration, and better photovoltaic performance are demonstrated in a 580℃sample. Also there is less deep-level impurity recombination, because the lower hole trap concentration is present in this sample. In addition, three deep levels, Ev ＋ 0.341 eV（H4）, E, ＋ 0.226 eV（HS） and Ec - 0.147 eV（E3）, are found in the 580℃sample, and the possible source of deep levels is analysed and discussed.

Localized deep levels in Al_xGa_(1-x)N epitaxial films with various Al compositions

By using high-temperature deep-level transient spectroscopy （HT-DLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14, 0.24, 0.33, and 0.43） have been investigated. It is found that there are three distinct deep levels in AlxGal-xN films, whose level position with respect to the conduction band increases as AI composition increases. The dominant defect level with the activation energy deeper than 1.0 eV below the conduction band closely follows the Fermi level stabilization energy, indicating that its origin may be related to the defect complex, including the anti-site defects and divacancies in AlxGa1-xN films.

Reduction of Deep Level Defects in Unintentionally Doped 4H-SiC Homo-epilayers by Ion Implantation

In order to reduce deep level defects, the theory and process design of 4H-SiC homoepitaxial layer implanted by carbon ion are studied. With the Monte Carlo simulator TRIM, the ion implantation range, location of peak concentration and longitudinal straggling of carbon are calculated. The process for improving deep energy level in undoped 4H-SiC homoepitaxial layer by three times carbon ion-implantation is proposed, including implantation energy, dose, the SiO2 resist mask, annealing temperature, annealing time and annealing protection. The deep energy level in 4H-SiC material can be significantly improved by implantation of carbon atoms into a shallow surface layer. The damage of crystal lattice can be repaired well, and the carbon ions are effectively activated after 1 600 ℃ annealing, meanwhile, deep level defects are decreased.

Deep level transient spectroscopy investigation of deep levels in CdS/CdTe thin film solar cells with Te:Cu back contact

Deep levels in Cds/CdTe thin film solar cells have a potent influence on the electrical property of these devices. As an essential layer in the solar cell device structure, back contact is believed to induce some deep defects in the CdTe thin film. With the help of deep level transient spectroscopy （DLTS）, we study the deep levels in CdS/CdTe thin film solar cells with Te：Cu back contact. One hole trap and one electron trap are observed. The hole trap H1, localized at Ev＋0.128~eV, originates from the vacancy of Cd （VCd. The electron trap E1, found at Ec-0.178~eV, is considered to be correlated with the interstitial Cui= in CdTe.

Ionization behavior of deep level donors in passive film formed on surface of stainless steel in 5% salt solution

Deep level donor＇s ionization behavior of passive film formed on the surface of stainless steel was investigated by Mott-Schottky plots. It is indicated that transformation process of deep level donors＇ ionization behavior of passive film on surface of stainless steel can be divided into 4 stages with rising immersion time. At the initial immersion stage （10 min）, Fe（II） located in the octahedral sites of the unit cell is not ionized and the deep level does not appear in Mott-Schottky plots. At the second stage （9-38 h）, Fe（II） located in the octahedral sites starts to be ionized, which results in deep level donors＇ generation and density of deep level donors almost is constant with augmenting immersion time but the thickness of space charge layer is more and more thicker with rising immersion time. At the third stage （48 h-12 d）, density of deep level donors rises with increasing immersion time and the thickness of passive films space charge layer decreases. At last stage （above 23 d）, both the space charge layer＇s thickness and density of deep level donors are no longer changed with increasing immersion time. In the overall immersion stage, the shallow level donors＇ density is invariable all the time. The mechanism of deep level donor＇s ionization can be the generation of metal vacancies, which results in crystal lattice＇s aberration and the aberration energy urges the ionization of Fe（ II ） in octahedral sites.

Charge-sensitive deep level transient spectroscopy of helium-ion-irradiated silicon,as-irradiated and after thermal annealing

Electrically active defects in the phosphor-doped single-crystal silicon, induced by helium-ion irradiation under thermal annealing, have been investigated. Isothermal charge-sensitive deep-level transient spectroscopy was employed to study the activation energy and capture cross-section of helium-induced defects in silicon samples. It was shown that the activation energy levels produced by helium-ion irradiation first increased with increasing annealing temperature, with the maximum value of the activation energy occurring at 873 K, and reduced with further increase of the annealing temperature. The energy levels of defects in the samples annealed at 873 and 1073 K are found to be located near the mid-forbidden energy gap level so that they can act as thermally stable carrier recombination centres.

Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.

DEEP LEVEL DEFECTS IN SI-IMPLANTED LEC UNDOPED Si-GaAs

The residual electrically active defects in(4×1012cm-2（30KeV）+5×1012cm-2（130KeV）)si-implanted LEC undoped si-GaAs activated by two-step rapid thermal annealing（RTA）LABELED AS 970℃（9S）+750℃（12S）have been investigated with deep level transient spec-troscopy（DLTS）.Two electron traps ET1(Ec-0.53eV,σn=2.3×10-16cm2)and ET2（Ec-0.81eV,σn=9.7×10（-13）cm2）are detected.Furthermore,the noticeable variations of trap’s con-centration and energy level in the forbidden gap with the depth profile of defects induced by ion im-plantation and RTA process have also been observed.The[Asi·VAs·AsGa]and[VAs·Asi·VGa·AsGa]are proposed to be the possible atomic configurations of ET1 and ET2,respectively to explaintheir RTA behaviors.

Deep Levels in Undoped Semi-insulating Liquid Encapsulated Czochralski GaAs Detected by Photocurrent Measurement

Deep levels in undoped semi insulating (SI) liquid encapsulated czochralski (LEC) GaAs were investigated through measuring extrinsic photocurrent spectra at 300 K. Two broad photoresponse bands M 1 and M 2 were observed in the range of 0.40 ～ 0.70 eV and the range from about 0.80 eV to the bandgap energy, respectively. It was shown that M 2 band is related to the photoionization of the deep defect EL2. M 1 band, which is reported for the first time, reveals several characteristic structures including five peaks at 0.46, 0.49, 0.56, 0.65 and 0.69 eV, respectively. The relative magnitudes of these peaks vary from sample to sample and are related to the thermal histories of the samples. These peaks are likely due to different deep levels.

Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer

Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition （HWCVD） have been studied using photoluminescence （PL） technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon （Vc） are revealed by electron spin resonance （ESR） technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.

Semiconductor steady state defect effective Fermi level and deep level transient spectroscopy depth profiling

The widely used deep level transient spectroscopy（DLTS） theory and data analysis usually assume that the defect level distribution is uniform through the depth of the depletion region of the n–p junction. In this work we introduce the concept of effective Fermi level of the steady state of semiconductor, by using which deep level transient spectroscopy depth profiling（DLTSDP） is proposed. Based on the relationship of its transition free energy level（TFEL） and the effective Fermi level, the rules of detectivity of the defect levels are listed. Computer simulation of DLTSDP is presented and compared with experimental data. The experimental DLTS data are compared with what the DLTSDP selection rules predicted. The agreement is satisfactory.

THEORY AND PRACTICE ON DETERMINATION OF DEEP LEVEL PROFILES IN MULTIHIGH-DENSITY-LEVEL CASE

This work is an improvement of the theory proposed by Qin Guogang and C. T. Sah for determination of deep level profiles in the multi-level ease. The previous theory cannot be applied to the ease when a level whose density is comparable to the carrier density exists between the Fermi level and the deep level under study or when the deep level under study locates near the middle of the forbidden gap. The present work has overcome those restrictions so that it is applicable to more general cases. For the proton-implanted CZ-Si sample, the density profile of E(0.22), second acceptor level of divacancies, has been calculated in the presence of highly concentrated oxygen-vacancy level E(0.15) and has been compared with the profile of the same level E(0.22) calculated without considering the existence of E(0.15).

The relationship between the deep-level structure in crust and brewing of strong earthquakes in Xingtai area

In this paper, crust medium is treated as Maxwell medium, and crust model includes hard inclusion, soft inclusion,deep-level fault. The stress concentration and its evolution with time are obtained by using three-dimensional finite element method and differential method. The conclusions are drawn as follows:①The average stress concentration and maximum shear stress concentration caused by non-heterogeneous of crust are very high in hard inclusion and around the deep fault. With the time passing by, the concentration of average stress in the model gradually trends to uniform. At the same time, the concentration of maximum shear stress in hard inclusion increases gradually. This character is favorable to transfer shear strain energy from soft inclusion to hard inclusion. ② When the upper mantle beneath the inclusion upheave at a certain velocity of 1 cm/a the changes of average stress concentration with time become complex, and the boundary of the hard and soft inclusion become unconspicuous, but the maximum shear stress concentration increases much more in the hard inclusion with time at a higher velocity. This feature make for transformation of energy from the soft inclusion to the hard inclusion. @ The changes of average stress concentration and maximum shear stress concentration with time around the deep-level fault result in further accumulation of maximum shear stress concentration and finally cause the deep-level fault instable and accelerated creep along fault direction. ④ The changes of vertical displacement on the surface of the model, which is caused by the accelerated creep of the deep-level fault, is similar to that of the observation data before Xingtai strong earthquake.

Towards efficient deep neural network training by FPGA-based batch-level parallelism

Training deep neural networks(DNNs)requires a significant amount of time and resources to obtain acceptable results,which severely limits its deployment in resource-limited platforms.This paper proposes DarkFPGA,a novel customizable framework to efficiently accelerate the entire DNN training on a single FPGA platform.First,we explore batch-level parallelism to enable efficient FPGA-based DNN training.Second,we devise a novel hardware architecture optimised by a batch-oriented data pattern and tiling techniques to effectively exploit parallelism.Moreover,an analytical model is developed to determine the optimal design parameters for the DarkFPGA accelerator with respect to a specific network specification and FPGA resource constraints.Our results show that the accelerator is able to perform about 10 times faster than CPU training and about a third of the energy consumption than GPU training using 8-bit integers for training VGG-like networks on the CIFAR dataset for the Maxeler MAX5 platform.

DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

Using deep-level transient spectroscopy, the interaction between lithium (Li) and radiation defects has been studied in two aspects: the creation of Li-related defects and the effect of Li on the annealing of radiation defects. It has been pointed out that oxygen in silicon can restrain the interaction between Li and radiation defects. Only when the concentration of Li is not far less than that of oxygen, can this interaction take effect. The Li-related defects E(0.17), E(0.21) E(0.38), E(0.50), H(0.42) and H(0.47) have been observed under different conditions. The similarity and difference between lithium and hydrogen in their interaction with radiation defects have been compared.

Influence of a deep-level-defect band formed in a heavily Mg-doped GaN contact layer on the Ni/Au contact to p-GaN

The influence of a deep-level-defect（DLD） band formed in a heavily Mg-doped GaN contact layer on the performance of Ni/Au contact to p-GaN is investigated. The thin heavily Mg-doped GaN（p^＋＋-GaN） contact layer with DLD band can effectively improve the performance of Ni/Au ohmic contact to p-GaN. The temperature-dependent I–V measurement shows that the variable-range hopping（VRH） transportation through the DLD band plays a dominant role in the ohmic contact. The thickness and Mg/Ga flow ratio of p^＋＋-GaN contact layer have a significant effect on ohmic contact by controlling the Mg impurity doping and the formation of a proper DLD band. When the thickness of the p^＋＋-GaN contact layer is 25 nm thick and the Mg/Ga flow rate ratio is 10.29%, an ohmic contact with low specific contact resistivity of 6.97×10^-4Ω·cm^2 is achieved.

Design of deep-water omnidirectional spirit level

Attitude adjustment is a key link in the installation process of underwater facilities in deep water.To solve this problem,an omnidirectional spirit level for deep water was developed.The sealing principle of the spirit level and the principle of deep-water pressure resistance are analyzed,and the threaded connection strength is checked.The mechanical simulation verifies that the spirit level can withstand the pressure of 2000 m water depth,and the water pressure test is carried out for 30 min in a 20 MPa hyperbaric chamber.After the experiment is completed,the appearance of the spirit level is intact and there is no leakage.The experiment results show that the deep-water omnidirectional spirit level can be used in the deep sea within 2000 m.

Study on the residence time of deep groundwater for high-level radioactive waste geological disposal

Residence time of deep groundwater is one of the most important parameters in safety and performance assessment for high-level radioactive waste geological disposal. In this study, we collected the deep groundwater samples of Jijicao in Gansu Beishan pre-selected region. The deep groundwater residence time at two depths estimated by Helium-4 accumulation method were 3.8 ka and 5.0 ka respectively upon measurement and calculation, which indicates that the deep groundwater is not derived from the deep crust circulation process. Hence, deep groundwater is featured with long residence time as well as slow circulation and update rate, and such features are conductive to the safe disposal of high-level radioactive waste.

华北地区深井水位对飑线天气过程的水力响应

为探讨华北地区飑线天气对深井水位干扰的特征和影响机制,以2017年9月21日发生在华北中部的一次飑线事件为例,使用时频分析和线性回归等方法系统地诊断了此次飑线对无极、辛集、永清和宁晋等四口千米级深井的水位扰动特征。结果表明:在宏观层面,飑线过境各深井时会引起气压快速涌升,在气压的激励下,深井水位出现了即时的脉冲状波动,该干扰的持续时间可长达127 min;此次飑线过程中周期性气压波动的主频段为15—25 cpd,在该频段内,各深井水位与气压扰动的形态高度负相关,相关系数均低于-0.95,气压系数主要集中在-4.9—-6.9 mm/hPa之间。