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Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits
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作者 Huang Chang, Yang Yinghua, Yu Shan, Zhang Xing, Xu Jun, Lu Quan, Chen Da 《Journal of Systems Engineering and Electronics》 SCIE EI CSCD 1992年第4期3-4,6-2,共4页
Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integra... Device physics research for submicron and deep submicron space microelectronics devices and integrated circuits will be described in three topics.1.Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits.2.Deep submicron LDD CMOS devices and integrated circuits.3.C band and Ku band microwave GaAs MESFET and III-V compound hetrojunction HEM T and HBT devices and integrated circuits. 展开更多
关键词 GaAs MESFET CMOS device Physics Research for submicron and deep submicron Space Microelectronics devices and Integrated Circuits MOSFET length
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