Dispersive Analysis of Excited Glueball States

Motivated by the determination for the spin-parity quantum numbers of the X(2370)meson at BESⅢ,we extend our dispersive analysis on hadronic ground states to excited states.The idea is to start with the dispersion relation which a correlation function obeys,and subtract the known ground-state contribution from the involved spectral density.

Analyzing the surface passivity effect of germanium oxynitride:a comprehensive approach through first principles simulation and interface state density

High-purity germanium(HPGe)detectors,which are used for direct dark matter detection,have the advantages of a low threshold and excellent energy resolution.The surface passivation of HPGe has become crucial for achieving an extremely low energy threshold.In this study,first-principles simulations,passivation film preparation,and metal oxide semiconductor(MOS)capacitor characterization were combined to study surface passivation.Theoretical calculations of the energy band structure of the -H,-OH,and -NH_(2) passivation groups on the surface of Ge were performed,and the interface state density and potential with five different passivation groups with N/O atomic ratios were accurately analyzed to obtain a stable surface state.Based on the theoretical calculation results,the surface passivation layers of the Ge_(2)ON_(2) film were prepared via magnetron sputtering in accordance with the optimum atomic ratio structure.The microstructure,C-V,and I-V electrical properties of the layers,and the passivation effect of the Al/Ge_(2)ON_(2)/Ge MOS were characterized to test the interface state density.The mean interface state density obtained by the Terman method was 8.4×10^(11) cm^(-2) eV^(-1).The processing of germanium oxynitrogen passivation films is expected to be used in direct dark matter detection of the HPGe detector surface passivation technology to reduce the detector leakage currents.

The Gap Labelling Integrated Density of States for a Quasi Crystal Universe Is Identical to the Observed 4.5 Percent Ordinary Energy Density of the Cosmos

Condense matter methods and mathematical models used in solving problems in solid state physics are transformed to high energy quantum cosmology in order to estimate the magnitude of the missing dark energy of the universe. Looking at the problem from this novel viewpoint was rewarded by a rather unexpected result, namely that the gap labelling method of integrated density of states for three dimensional icosahedral quasicrystals is identical to the previously measured and theoretically concluded ordinary energy density of the universe, namely a mere 4.5 percent of Einstein’s energy density, i.e. E(O) = mc2/22 where E is the energy, m is the mass and c is the speed of light. Consequently we conclude that the missing dark energy density must be E(D) = 1 - E(O) = mc2(21/22) in agreement with all known cosmological measurements and observations. This result could also be interpreted as a strong evidence for the self similarity of the geometry of spacetime, which is an expression of its basic fractal nature.

Research on the Relationship between Density of States and Conducting Properties of Single-walled Carbon Nanotubes

The analytical expression of the electronic density of states (DOS) for single-walled carbon nanotubes (SWNTs) has been derived on the basis of graphene approximation of the energy E(k) near the Fermi level EF. The distinctive properties of the DOS, the normalized differential conductivity and the current us bias for SWNTs are deduced and analyzed theoretically. The singularities in the DOS (or in the normalized differential conductivity) predict that the jump structure of current (or conductance)-bias of SWNTs exists. All conclusions from the theoretical analysis are in well agreement with the experimental results of SWNT's electronic structure and electronic transport. In other words, the simple theoretical model in this paper can be applied to understand a range of spectroscopic and other measurement data related to the DOS of SWNTs.

Wigner Function：from Ensemble Average of Density Operator to Its Matrix Element in Entangled Pure States

We show that the Wigner function (an ensemble average of the density operator ρ, Δ is the Wigner operator) can be expressed as a matrix element of ρ in the entangled pure states. In doing so, converting from quantum master equations to time-evolution equation of the Wigner functions seems direct and concise. The entangled states are defined in the enlarged Fock space with a fictitious freedom.

Enhancement of refresh time in quasi-nonvolatile memory by the density of states engineering

The recently reported quasi-nonvolatile memory based on semi-floating gate architecture has attracted extensive attention thanks to its potential to bridge the large gap between volatile and nonvolatile memory.However,the further extension of the refresh time in quasi-nonvolatile memory is limited by the charge leakage through the p-n junction.Here,based on the density of states engineered van der Waals heterostructures,the leakage of electrons from the floating gate to the channel is greatly suppressed.As a result,the refresh time is effectively extended to more than 100 s,which is the longest among all previously reported quasi-nonvolatile memories.This work provides a new idea to enhance the refresh time of quasi-nonvolatile memory by the density of states engineering and demonstrates great application potential for high-speed and low-power memory technology.

Charge Density Wave States and Structural Transition in Layered Chalcogenide TaSe_(2-x)Te_x

The structural features and three-dimensional nature of the charge density wave （CDW） state of the layered chalcogenide 1T-TaSe2-xTex （0≤x≤2.0） are characterized by Cs-corrected transmission electron microscopy measurements. Notable changes of both average structure and the CDW state arising from Te substitution for Se are clearly demonstrated in samples with x〉0.3. The commensurate CDW state characterized by the known star-of-David clustering in the 1T-TaSe2 crystal becomes visibly unstable with Te substitution and vanishes when x=0.3. The 1T-TaSe2-xTex （0.3≤x≤1.3） samples generally adopt a remarkable incommensurate CDW state with monoclinic distortion, which could be fundamentally in correlation with the strong qq-dependent electron-phonon coupling-induced period-lattice-distortion as identified in TaTe22. Systematic analysis demonstrates that the occurrence of superconductivity is related to the suppression of the commensurate CDW phase and the presence of discommensuration is an evident structural feature observed in the superconducting samples.

Spontaneous-emission control by local density of states of photonic crystal cavity

The local density of states （LDOS） of two-dimensional square lattice photonic crystal （PhC） defect cavity is studied. The results show that the LDOS in the centre is greatly reduced, while the LDOS at the point off the centre （for example, at the point （0.3a, 0.4a）, where a is the lattice constant） is extremely enhanced. Further, the disordered radii are introduced to imitate the real devices fabricated in our experiment, and then we study the LDOS of PhC cavity with configurations of different disordered radii. The results show that in the disordered cavity, the LDOS in the centre is still greatly reduced, while the LDOS at the point （0.3a, 0.4a） is still extremely enhanced. It shows that the LDOS analysis is useful. When a laser is designed on the basis of the square lattice PhC rod cavity, in order to enhance the spontaneous emission, the active materials should not be inserted in the centre of the cavity, but located at positions off the centre. So LDOS method gives a guide to design the positions of the active materials （quantum dots） in the lasers.

Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k·p theory

After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states （DOS） effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal-oxide semiconductor field effect transistor （MOSFET）. It also a provides valuable reference for biaxial tensile strained silicon MOSFET design.

Spin-Split Joint Density of States in GdN

We present an investigation of the optical constants of the near stoichiometric GdN films. Transmission and reflection spectra are collected for the paramagnetic and the ferromagnetic GdN in the photon energy range of 0.5-5.5 eV. In the ferromagnetic phase, behaviors of minority and majority spin states are specifically focussed on, which indicate spin-split joint density of states. The results confirm the LSDA＋U estimates of energy gap associated with the majority-spins and also the magnitude of spin splitting.

Wigner Function:from Ensemble Average of Density Operator to Its One Matrix Element in Entangled Pure States

We show that the Wigner function W = Tr(△ρ) (an ensemble average of the density operator ρ, △ is theWigner operator) can be expressed as a matrix element of ρ in the entangled pure states. In doing so, converting fromquantum master equations to time-evolution equation of the Wigner functions seems direct and concise. The entangledstates are defined in the enlarged Fock space with a fictitious freedom.

Local density of states of dc-biased superlattices with time-dependent imperfection

The single-particle Green＇s function for a dc-biased superlattices with single impurity potential varying harmonically with time has been obtained in the framework of U（t,t＇） method and Floquet-Green＇s function. The calculation of the local density of states shows that new states will emerge between the resonant Wannier-Stark states as a result of the intervention of time-dependent impurity potential, and the increase in electric field strength of impurity will result in the growing of the number of new states between the gaps of neighbouring Stark ladders.

Methods for Derivation of Density Matrix of Arbitrary Multi-Mode Gaussian States from Its Phase Space Representation

We present a method for derivation of the density matrix of an arbitrary multi-mode continuous variable Gaussian entangled state from its phase space representation.An explicit computer algorithm is given to reconstruct the density matrix from Gaussian covariance matrix and quadrature average values.As an example,we apply our method to the derivation of three-mode symmetric continuous variable entangled state.Our method can be used to analyze the entanglement and correlation in continuous variable quantum network with multi-mode quantum entanglement states.

Density of States in Two-Dimensional Square Lattices Around Half Filling with Strong Impurities

We calculate the lowest-order quantum-interference correction to the density of states (DOS) of weakly-disordered two-dimensional (2D) tight-binding square lattices around half filling. The impurities are assumed to be randomly distributed on small fractions of the sites, and have a-strong potential yielding a unitary-limit scattering. In addition to the usual diffusive modes in the retarded-advanced channel, there appear diffusive pi modes in the retarded-retarded (or advanced-advanced) channel due to the existence of particle-hole symmetry. It is found that the pi-mode diffuson gives rise to a logarithmic suppression to the DOS near the band center, which prevails over the positive correction contributed by pi-mode cooperon. As a result, the DOS is subject to a negative total correction. This result is qualitatively different from the divergent behavior of the DOS at the band center predicted previously for disordered 2D two-sublattice models with the particle-hole symmetry.

Study of Electronic Density of States: Zintl Alloys

In the present work the electronic density of states of liquid,viz.,Zintli alloys,have been studied only at the composition of their maximum resistivity to have an elementary idea about the behaviors of the alloys with respect to nearly free electron behavior.The study reveals that the anomalous electronic behavior of liquid Li-Pb,Na-Pb,Li-Sn,and Na-Sn can be attributed to the preferential ordering of unlike atoms.

Local density of optical states calculated by the mode spectrum in stratified media

The local density of optical states(LDOS)is an important physical concept,which can characterize the spontaneous emission of microcavities.In order to calculate the LDOS,the relationship between the mode spectrum and the LDOS is established.Then,based on the transfer matrix method and the effective resonator model,the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated,results of which indicate that the mode spectrum can characterize the leaky loss of the leaky mode.At last,the density of optical states(DOS),and the LDOS in each layer are calculated.The partial DOS and the partial LDOS in the quantum well,related to the fundamental leaky mode,can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers.

The Temperature Dependence of the Thermodynamic Density of States and Urbach Rule

It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long-wave edge of the fundamental absorption. With the help of mathematical modeling, it shows that the thermal broadening of the energy states of the conduction band and the discrete states in the band gap can cause long-wave decline according to the Urbach rule.

Theoretical Study of Specific Heat and Density of States of MgB₂Superconductor in Two Band Model

MgB2 with Tc ≈ 40 K, is a record-breaking compound among the s-p metals and alloys. It appears that this material is a rare example of the two band electronic structures, which are weakly connected with each other. Experimental results clearly reveal that boron sub-lattice conduction band is mainly responsible for superconductivity in this simple compound. Experiments such as tunneling spectroscopy, specific heat measurements, and high resolution spectroscopy show that there are two superconducting gaps. Considering a canonical two band BCS Hamiltonian containing a Fermi Surface of π- and σ-bands and following Green’s function technique and equation of motion method, we have shown that MgB2 possess two superconducting gaps. It is also pointed out that the system admits a precursor phase of Cooper pair droplets that undergoes a phase locking transition at a critical temperature below the mean field solution. Study of specific heat and density of states is also presented. The agreement between theory and experimental results for specific heat is quite convincing. The paper is organized in five sections: Introduction, Model Hamiltonian, Physical properties, Numerical calculations, Discussion and conclusions.

The Temperature Dependence of the Density of States in Semiconductors

The temperature dependence of the density of energy states in semiconductors is considered. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the band gap of semiconductors is studied. In view of the non-parabolic and the temperature dependence of the effective mass of the density of states in the allowed bands, graphs of temperature dependence of the band gap are obtained. The theoretical results of mathematical modeling are compared with experimental data for Si, InAs and solid solutions of p-Bi2-xSbxTe3-ySey. The theoretical results satisfactorily explain the experimental results for Si and InAs. The new approach is investigated by the temperature dependence of the band gap of semiconductors.

Effect of Temperature and Band Nonparabolicity on Density of States of Two Dimensional Electron Gas

The analysis of the density of states for electrons in single quantum well, the conduction band nonparabolicity take is account. It is shown that the degree of conduction band nonparabolicity pronounces depending on the energy density of states. With increasing temperature, a step change in the density of states smoothes and at high temperatures is completely blurred. Nonparabolicity dispersion law manifests itself in a wide range of temperatures. Calculations are carried out for the example of the quantum wells in InAs and InSb.