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Assessing the role of forest resources in improving rural livelihoods in West Bengal of India
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作者 Soumen BISUI Pravat Kumar SHIT 《Regional Sustainability》 2024年第2期75-88,共14页
Forest resources play a vital role in supporting the livelihoods of rural communities residing in forest-rich areas.In India,a forest-rich country,a significant proportion of non-timber forest products(NTFPs)is consum... Forest resources play a vital role in supporting the livelihoods of rural communities residing in forest-rich areas.In India,a forest-rich country,a significant proportion of non-timber forest products(NTFPs)is consumed locally,supporting numerous rural communities relying on forests for essential resources,such as firewood,timber,and NTFPs.This study focuses on two forest-dominant districts in West Bengal of India,namely,Jhargram District and Paschim Medinipur District.Furthermore,this study aims to enhance the understanding of forest-dependent communities by comparing the standard of living among different village classes.Thus,we categorized villages into three classes based on the distance from home to forests,including inner villages,fringe villages,and outer villages.Through focus group discussions and household surveys,we explored the sources of local economy,income sources of household,and reasons for economic diversification in different village classes.The study findings confirm that substantial variations existed in the income sources and the standard of living in these villages.Forest income varied dramatically among the three village classes,with inner villages having greater forest income than fringe villages and outer villages.Meanwhile,households in outer villages depended on forests and engaged in diverse economic activities for their livelihoods.Compared with inner and fringe villages,households in outer villages derived a significant portion of their income from livestock.This discrepancy can be attributed to challenges,such as inadequate transportation,communication,and underdeveloped market chains in inner villages.Moreover,these findings emphasize the need to develop sustainable forest management practices,create alternative income-generation opportunities,and improve infrastructure and market access in inner villages,as well as promote economic diversification in outer villages.Through targeted policy measures,these forest-rich regions can achieve improved livelihoods,enhanced standard of living,and increased resilience for their communities. 展开更多
关键词 Non-timber forest products(NTFPs) forest resources Standard of living INDEX LIVELIHOOD dependency index Income sources INDIa
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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis 被引量:1
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作者 全思 郝跃 +1 位作者 马晓华 于惠游 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第1期643-646,共4页
This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography... This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with TT = (0.5 - 6) ms and DT : (1 - 5)×10^13 cm^-2. eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with TW(f)= (0.2 - 2) μs and slow with TT(s) = (0.5 - 6) ms. The density of trap states evaluated on the EHEMTs is Dw(f) : (1 - 3) × 10^12 cm^-2. eV^-1 and DT(s) =(2 - 6) × 10^12 cm-2. eV-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current. 展开更多
关键词 aLGaN/GaN enhancement-mode high electronic mobility transistors fluorine plasma treatment frequency dependent capacitance and conductance
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Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements
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作者 SAHAR Alialy AHMET Kaya +1 位作者 I Uslua EMSETTIN Altmdal 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第11期92-96,共5页
Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-v... Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (ND), barrier height ( ФB( C - V) ), depletion layer width (WD) and series resistance (Rs) show fairly large illumination dispersion. The voltage-dependent profile of surface states (Nss) and resistance of the structure (Ri ) are also obtained by using the dark-illumination capacitance (Cdark- Cm) and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB(O- V) and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB(C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications. 展开更多
关键词 SI PVa Illumination and Voltage dependence of Electrical Characteristics of au/0.03 Graphene-Doped PVa/n-Si Structures via capacitance/Conductance-Voltage Measurements
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Relationship between fall risks and activities of daily living in older individuals
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作者 Senay Karadag Arli Metin Yildiz Ayse Berivan Bakan 《Frontiers of Nursing》 CAS 2020年第3期249-256,共8页
Objective:To investigate the relationship between fall risks and maintaining activities of daily living in individuals aged 65 and over.Methods:This study is cross-sectional.It was conducted with 233 individuals who w... Objective:To investigate the relationship between fall risks and maintaining activities of daily living in individuals aged 65 and over.Methods:This study is cross-sectional.It was conducted with 233 individuals who were aged 65 and over in Family Health Centers located in the eastern part of Turkey between February and June 2018.Results:The mean older individuals’DENN Fall Risks Assessment Scale score was 11.73±7.13,and 62.2%of the participants were in the high-risk group.Barthel Index of Activities of Daily Living(ADL)mean score was 68.03±25.36,and 45.1%of the participants were in the moderately dependent group.There was a statistically significant,negative correlationship between Barthel Index of ADL score and age and DENN Fall Risks Assessment Scale score.In addition,there was a statistically significant,positive relationship between the DENN Fall Risks Assessment Scale score and age(p<0.01).Conclusions:This study found that level of dependency and fall risks increased with the increase in age.Effective global and multidisciplinary interventions are needed to decrease older individuals’dependency levels and fall risks today when the number of older individuals is increasing. 展开更多
关键词 activities of daily living dependENCY OLDER fall risk
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Modeling and Simulations in Symmetrical Supercapacitors Using Time Domain Mathematical Expressions
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作者 Antonio Paulo Rodrigues Fernandez Elio Alberto Périgo Rubens Nunes de Faria Júnior 《Journal of Applied Mathematics and Physics》 2022年第10期3083-3100,共18页
This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of... This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of constant electric potential in time ε and the curve of the discharge process through two fixed resistors. The first resistor R<sub>Co</sub> is a control that aims to prevent sudden variations in the intensity of the electric current i<sub>1</sub>(t) present at the terminals of the electrochemical supercapacitor at the beginning of the charging process. The second resistor is the internal resistance R<sub>A</sub> of the ammeter used in the calculation of the intensity of the electric current i<sub>1</sub>(t) over time in the charging and discharging processes. The mathematical equations generated were based on a 2R(C + kU<sub>C</sub>(t)) electrical circuit model and allowed to simulate the effects of the potential-dependent capacitance (kU<sub>C</sub>(t)) on the charge and discharge curves and hence on the calculated values of the fixed capacitance C, the equivalent series resistance (ESR), the equivalent parallel resistance (EPR) and the electrical potential dependent capacitance index k. 展开更多
关键词 Symmetrical Supercapacitors Electrical Circuit Modeling Potential dependent capacitance Simulation of Charge and Discharge Curves Time Domain Mathematical Equations
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Reduction Charge Smaller than the Deposited One in Cathodic Stripping Voltammograms of AgCl
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作者 Peng Tang Koichi Jeremiah Aoki Jingyuan Chen 《American Journal of Analytical Chemistry》 2019年第8期286-295,共10页
A silver electrode was anodized in lowly concentrated potassium chloride solution almost under the steady state to generate a deposit of silver chloride on the electrode, and the deposit was cathodically stripped by l... A silver electrode was anodized in lowly concentrated potassium chloride solution almost under the steady state to generate a deposit of silver chloride on the electrode, and the deposit was cathodically stripped by linear potential scan to evaluate the reduction charge. Then the oxidation charge was larger than the reduction one. Since the equality was valid for long term chronocoulometry at the double potential step, the inequality is not due to any irreversibility of electrode reactions, but can be attributed to the process of the cathodic potential scan. A reason for the inequality is the negative charge of the capacitance involved in the electrode reaction, which has been observed in simple, dissolved redox species like a ferrocenyl derivative. The negative capacitive currents are conspicuous for high concentrations of redox species on the electrode because they result from the orientation of the dipoles of the redox species coupled with counterion, of which direction is opposite to that of the solvent dipoles. If a silver chloride film was thin enough to be regarded as a monolayer, we found that half of the cathodic stripping charge should be lost by the negative capacitance. 展开更多
关键词 Silver Electrode Double Layer capacitance STRIPPING VOLTaMMETRY CHRonOCOULOMETRY Time-dependent CHaRGE
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Characterization of Al_2O_3 /GaN/AlGaN/GaN metalinsulator-semiconductor high electron mobility transistors with different gate recess depths
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作者 马晓华 潘才渊 +6 位作者 杨丽媛 于惠游 杨凌 全思 王昊 张进成 郝跃 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第2期458-464,共7页
In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs), we demonst... In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs), we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times (15 s, 17 s and 19 s). The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----(0.20--1.59) p^s and Dit :(0.55-1.08)x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively. 展开更多
关键词 a1GaN/GaN gate-recessed MIS-HEMT frequency-dependent capacitance and conduc-tance drain current injection technique knee resistance
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Accurate Determination for the Energy & Temperature Dependence of Electron Capture CrossSection of Si-SiO_2 Interface States Using a New Method
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作者 陈开茅 武兰清 +1 位作者 许慧英 刘鸿飞 《Science China Mathematics》 SCIE 1993年第11期1397-1408,共12页
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i... A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy. 展开更多
关键词 the capacitance transient of the carrier filling charge-potential feedback effect Si-SiO_2 interface temperature and energy dependence of the capture cross-section of the interface states.
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220 kV MOA带电测量相间干扰的研究与分析 被引量:2
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作者 何大猛 王仲奕 《四川电力技术》 2019年第1期47-51,共5页
提出了一种将"场"和"路"相结合的方法用于计算220 kV MOA带电测量相间干扰问题。并运用ANSYS Maxwell和EMTP软件联合仿真计算加以验证,为MOA在线监测减小相间干扰提供了理论依据和切实可行的办法。仿真计算结果显... 提出了一种将"场"和"路"相结合的方法用于计算220 kV MOA带电测量相间干扰问题。并运用ANSYS Maxwell和EMTP软件联合仿真计算加以验证,为MOA在线监测减小相间干扰提供了理论依据和切实可行的办法。仿真计算结果显示,A相和C相受干扰影响比较明显,而B相幅值和相位变化相对较小。 展开更多
关键词 金属氧化物避雷器(MOa) 相间干扰电流 有限元法 相间耦合电容 带电监测
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Analytical Frequency-Dependent Model for Transmission Lines on RF-CMOS Lossy Substrates
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作者 叶佐昌 喻文健 余志平 《Tsinghua Science and Technology》 SCIE EI CAS 2007年第6期752-756,共5页
Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electric... Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters (per unit length) obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits. 展开更多
关键词 transmission lines frequency dependence capacitance radio frequency complementary metaloxide semiconductor (RF-CMOS) circuit characteristics
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Safeguarding the Lives of the Elderly and Their Dependence on the Community─Results of a Survey Conducted in the Nankai District of Tianjin
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作者 Wang Laihua Bai Hongguang 《Social Sciences in China》 2000年第1期116-124,共9页
关键词 Safeguarding the Lives of the Elderly and their dependence on the Community Results of a Survey Conducted in the Nankai District of Tianjin
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Efficient User Authentication and Key Management for Peer-to-Peer Live Streaming Systems
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作者 刘雪宁 尹浩 +1 位作者 林闯 杜长来 《Tsinghua Science and Technology》 SCIE EI CAS 2009年第2期234-241,共8页
Recent development of the peer-to-peer (P2P) live streaming technique has brought unprecedented new momentum to the Internet with the characters of effective, scalable, and low cost. However, before these applicatio... Recent development of the peer-to-peer (P2P) live streaming technique has brought unprecedented new momentum to the Internet with the characters of effective, scalable, and low cost. However, before these applications can be successfully deployed as commercial applications, efficient access control mechanisms are needed. This work based on earlier research of the secure streaming architecture in Trust- Stream, analyzes how to ensure that only authorized users can access the original media in the P2P live streaming system by adopting a user authentication and key management scheme. The major features of this system include (1) the management server issues each authorized user a unique public key certificate, (2) the one-way hash chain extends the certificate's lifetime, (3) the original media is encrypted by the session key and delivered to the communication group, and (4) the session key is periodically updated and distributed with the media. Finally, analyses and test results show that scheme provides a secure, scalable, reliable, and efficient access control solution for P2P live streaming systems. 展开更多
关键词 peer-to-peer (P2P) live streaming user authentication key management hash chain media-dependent
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基于“场”和“路”结合的500 kV MOA带电测量相间干扰研究分析 被引量:1
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作者 何大猛 《四川电力技术》 2018年第5期63-66,共4页
运用ANSYS Maxwell和EMTP软件联合仿真,将"场"和"路"相结合的方法用于计算500 kV MOA带电测量相间干扰问题,并通过实际运行数据加以验证,为MOA在线监测减小相间干扰提供了理论依据和切实可行的办法。
关键词 金属氧化物避雷器(MOa) 相间干扰电流 有限元法 相间耦合电容 带电监测
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《民法典》第1179条第2句(残疾赔偿、死亡赔偿)评注
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作者 李承亮 《南大法学》 CSSCI 2024年第3期142-166,共25页
《民法典》第1179条第2句第2分句不仅仅是进一步明确法律效果的辅助规范**,也是进一步明确单纯侵害民事利益侵权责任的构成要件的辅助规范。《人身损害赔偿司法解释》对残疾赔偿金、丧葬费、死亡赔偿金、被扶养人生活费的计算进行了定... 《民法典》第1179条第2句第2分句不仅仅是进一步明确法律效果的辅助规范**,也是进一步明确单纯侵害民事利益侵权责任的构成要件的辅助规范。《人身损害赔偿司法解释》对残疾赔偿金、丧葬费、死亡赔偿金、被扶养人生活费的计算进行了定额处理。定额赔偿的本质是不考虑被侵权人本人情况客观计算损害。残疾赔偿金、死亡赔偿金有广狭义之分。广义残疾赔偿金、死亡赔偿金代表了被侵权人的全部收入损失,包含被扶养人生活费,而不能与被扶养人生活费赔偿并存;狭义残疾赔偿金、死亡赔偿金只是被侵权人收入损失的一部分,与被扶养人生活费赔偿并存不会导致重复赔偿。扶养期限既取决于被扶养人需要他人扶养的期限,更取决于扶养人(被侵权人)能够扶养他人的期限。被扶养人生活费是被侵权人的部分收入损失,被侵权人的收入期限直接决定了扶养期限。被侵权人的收入期限应当与残疾赔偿金、死亡赔偿金的赔偿期限一致。 展开更多
关键词 主观计算 定额计算 残疾赔偿金 死亡赔偿金 被扶养人生活费
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电商直播情境下消费语言对在线消费者购买意愿的影响研究 被引量:1
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作者 黄文珺 车兰兰 《价格月刊》 北大核心 2024年第3期89-94,共6页
以临场感知理论和场景的原型理论为指导,并将消费者的临场感知和场景依赖作为中介因素,通过外部场景语言和内部沟通语言的双重感知进行评价,构建关于消费语言感知情境下影响顾客购买意愿的驱动模型。研究发现,在直播情境中,生动性更强... 以临场感知理论和场景的原型理论为指导,并将消费者的临场感知和场景依赖作为中介因素,通过外部场景语言和内部沟通语言的双重感知进行评价,构建关于消费语言感知情境下影响顾客购买意愿的驱动模型。研究发现,在直播情境中,生动性更强的沟通语言形式对消费者购买意愿存在着明显的影响效应。内部沟通语言可以通过临场感知的单一中介和与场景依赖的链式中介路径,来影响消费者的购买意愿。在多样化的消费语言情境中,场景依赖成为影响消费者购买意愿的重要前提,凸显了消费语言在沉浸体验和场景营销实践中的特殊性。 展开更多
关键词 直播电商 消费语言 临场感 场景依赖 购买意愿
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在线活细胞定量检测模型的建立及其在辅酶Q10中的应用
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作者 葛燕 刘建镔 +4 位作者 翟辰欣 杨冰莹 郝喆江 王泽建 梁剑光 《中国食品添加剂》 CAS 2024年第4期219-226,共8页
在类球红细菌发酵生产辅酶Q10的过程中,其菌体生长代谢情况及产物合成与有活力的细胞量密切相关。活细胞传感仪通过利用细胞的介电特性,能够检测发酵液中的活细胞量,且检测结果不受死细胞、气泡的影响。在辅酶Q10的发酵过程中,运用活细... 在类球红细菌发酵生产辅酶Q10的过程中,其菌体生长代谢情况及产物合成与有活力的细胞量密切相关。活细胞传感仪通过利用细胞的介电特性,能够检测发酵液中的活细胞量,且检测结果不受死细胞、气泡的影响。在辅酶Q10的发酵过程中,运用活细胞传感仪采用全频扫描模式对检测到的电容值进行校正,校正后的电容值与CFU具有良好的线性关系,R^(2)=0.995,可以准确预测发酵液中菌体生长状态和活细胞量。基于电导率和校正后的电容值对辅酶Q10发酵过程中补料策略进行优化,辅酶Q10产量最终达到3420 mg/L。 展开更多
关键词 辅酶Q10 活细胞量 在线活细胞传感仪 电容值 电导率
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Genomic similarity and antibody-dependent enhancement of immune serum potentially affect the protective efficacy of commercial MLV vaccines against NADC30-like PRRSV 被引量:5
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作者 Yang Li Lele Xu +11 位作者 Dian Jiao Zifang Zheng Zhihao Chen Yang Jing Zhiwei Li Zhiqian Maa Yingtong Feng Xuyang Guo Yumiao Wang Yuan He Haixue Zheng Shuqi Xiao 《Virologica Sinica》 SCIE CAS CSCD 2023年第5期813-826,共14页
Porcine reproductive and respiratory syndrome(PRRS)is one of the most significant diseases affecting the pig industry worldwide.The PRRSV mutation rate is the highest among the RNA viruses.To date,NADC30-like PRRSV an... Porcine reproductive and respiratory syndrome(PRRS)is one of the most significant diseases affecting the pig industry worldwide.The PRRSV mutation rate is the highest among the RNA viruses.To date,NADC30-like PRRSV and highly pathogenic PRRSV(HP-PRRSV)are the dominant epidemic strains in China;however,commercial vaccines do not always provide sufficient cross-protection,and the reasons for insufficient protection are unclear.This study isolated a wild-type NADC30-like PRRSV,SX-YL1806,from Shaanxi Province.Vaccination challenge experiments in piglets showed that commercial modified live virus(MLV)vaccines provided good protection against HP-PRRSV.However,it could not provide sufficient protection against the novel strain SXYL1806.To explore the reasons for this phenomenon,we compared the genomic homology between the MLV strain and HP-PRRSV or NADC30-like PRRSV and found that the MLV strain had a lower genome similarity with NADC30-like PRRSV.Serum neutralization assay showed that MLV-immune serum slightly promoted the homologous HP-PRRSV replication and significantly promoted the heterologous NADC30-like PRRSV strain replication in vitro,suggesting that antibody-dependent enhancement(ADE)might also play a role in decreasing MLV protective efficacy.These findings expand our understanding of the potential factors affecting the protective effect of PRRSV MLV vaccines against the NADC30-like strains. 展开更多
关键词 NaDC30-like PRRSV Modified live virus(MLV)vaccines Genomic similarity antibody dependent enhancement(aDE) Cross protection
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就业优先战略背景下城乡低保制度的劳动参与抑制效应研究——来自模糊断点回归的证据
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作者 刘璐婵 刘艺 《南方人口》 CSSCI 2024年第2期40-52,共13页
中国近年来关于“低保养懒汉”的质疑使最低生活保障的就业效应成为热点研究问题。本文借助CLDS2018年的数据和模糊断点回归模型来判断城乡低保政策对受助者劳动参与形成的激励或抑制作用。研究发现,最低生活保障政策的实施在一定程度... 中国近年来关于“低保养懒汉”的质疑使最低生活保障的就业效应成为热点研究问题。本文借助CLDS2018年的数据和模糊断点回归模型来判断城乡低保政策对受助者劳动参与形成的激励或抑制作用。研究发现,最低生活保障政策的实施在一定程度上抑制了城乡困难群体的劳动参与行为,接受社会救助的政策干预会显著降低城乡困难群体的劳动供给水平,尤其是农村地区、家庭照料负担重、34岁以下、女性、高中及以上学历的子样本对政策的负效应更敏感。基于此,提出在充分考量低保受助群体就业困境的前提下分析劳动参与抑制的动因,并以此为基础明确政策干预关键点,逐步消除劳动参与的掣肘要素,同时强化低保制度与劳动力市场的联动,不断更新就业激活政策体系,并在分层分类救助的基础上探索多类型的就业促进方案,进而培养贫困群体的持续就业能力。 展开更多
关键词 低保政策 劳动供给 模糊断点回归 福利依赖 社会救助
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浅议家电产品中电容式触摸开关的评估
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作者 陈凌峰 邓明兴 《日用电器》 2024年第2期107-110,共4页
对于电子电器产品常用的电容式触摸开关模块,人体是检测电路的一部分,因此,检测电路必须满足保护阻抗的要求;忽视了电容式触摸开关模块的这一特点,在认证检测过程中,一方面,很可能在电气强度试验、球压测试中出现误判,另一方面,很可能... 对于电子电器产品常用的电容式触摸开关模块,人体是检测电路的一部分,因此,检测电路必须满足保护阻抗的要求;忽视了电容式触摸开关模块的这一特点,在认证检测过程中,一方面,很可能在电气强度试验、球压测试中出现误判,另一方面,很可能在电子电路模拟故障的相关测试中出现漏判。目前IEC体系的家电产品标准对于电子开关的操作可靠性的关注程度不尽理想,认证检测机构及相关企业应对此有一定的警觉。 展开更多
关键词 电容式触摸开关 保护阻抗 危险带电件 球压
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线路零序参数带电测量电容分量补偿算法 被引量:9
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作者 毛鹏 张承学 +3 位作者 王元媛 白日昶 胡志坚 帅玲玲 《电力系统自动化》 EI CSCD 北大核心 2010年第17期55-58,82,共5页
鉴于输电线路参数的重要性和影响线路参数因素的复杂性,输电线路参数值均要求实际测量,尤其是零序参数。通过对输电线路分布特性的分析,获得了输电线路参数测量集中参数模型;基于增量法测量零序参数,提出一种通过输电线路电容电流分量... 鉴于输电线路参数的重要性和影响线路参数因素的复杂性,输电线路参数值均要求实际测量,尤其是零序参数。通过对输电线路分布特性的分析,获得了输电线路参数测量集中参数模型;基于增量法测量零序参数,提出一种通过输电线路电容电流分量来校正参数测量计算的改进算法,并推导出具体的补偿依据,在参数计算中引入了电流补偿度因子η及其表达式,理论分析可知该补偿算法可提高测量参数的精度。最后利用PSCAD对高压互感输电线路的零序参数测量进行了仿真计算和对比分析,验证了加入补偿算法和选取的补偿度对提高测量计算参数精度的有效性。 展开更多
关键词 输电线路 零序参数 带电测量 电容电流补偿 PSCaD
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