Forest resources play a vital role in supporting the livelihoods of rural communities residing in forest-rich areas.In India,a forest-rich country,a significant proportion of non-timber forest products(NTFPs)is consum...Forest resources play a vital role in supporting the livelihoods of rural communities residing in forest-rich areas.In India,a forest-rich country,a significant proportion of non-timber forest products(NTFPs)is consumed locally,supporting numerous rural communities relying on forests for essential resources,such as firewood,timber,and NTFPs.This study focuses on two forest-dominant districts in West Bengal of India,namely,Jhargram District and Paschim Medinipur District.Furthermore,this study aims to enhance the understanding of forest-dependent communities by comparing the standard of living among different village classes.Thus,we categorized villages into three classes based on the distance from home to forests,including inner villages,fringe villages,and outer villages.Through focus group discussions and household surveys,we explored the sources of local economy,income sources of household,and reasons for economic diversification in different village classes.The study findings confirm that substantial variations existed in the income sources and the standard of living in these villages.Forest income varied dramatically among the three village classes,with inner villages having greater forest income than fringe villages and outer villages.Meanwhile,households in outer villages depended on forests and engaged in diverse economic activities for their livelihoods.Compared with inner and fringe villages,households in outer villages derived a significant portion of their income from livestock.This discrepancy can be attributed to challenges,such as inadequate transportation,communication,and underdeveloped market chains in inner villages.Moreover,these findings emphasize the need to develop sustainable forest management practices,create alternative income-generation opportunities,and improve infrastructure and market access in inner villages,as well as promote economic diversification in outer villages.Through targeted policy measures,these forest-rich regions can achieve improved livelihoods,enhanced standard of living,and increased resilience for their communities.展开更多
This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography...This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with TT = (0.5 - 6) ms and DT : (1 - 5)×10^13 cm^-2. eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with TW(f)= (0.2 - 2) μs and slow with TT(s) = (0.5 - 6) ms. The density of trap states evaluated on the EHEMTs is Dw(f) : (1 - 3) × 10^12 cm^-2. eV^-1 and DT(s) =(2 - 6) × 10^12 cm-2. eV-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.展开更多
Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-v...Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (ND), barrier height ( ФB( C - V) ), depletion layer width (WD) and series resistance (Rs) show fairly large illumination dispersion. The voltage-dependent profile of surface states (Nss) and resistance of the structure (Ri ) are also obtained by using the dark-illumination capacitance (Cdark- Cm) and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB(O- V) and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB(C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.展开更多
Objective:To investigate the relationship between fall risks and maintaining activities of daily living in individuals aged 65 and over.Methods:This study is cross-sectional.It was conducted with 233 individuals who w...Objective:To investigate the relationship between fall risks and maintaining activities of daily living in individuals aged 65 and over.Methods:This study is cross-sectional.It was conducted with 233 individuals who were aged 65 and over in Family Health Centers located in the eastern part of Turkey between February and June 2018.Results:The mean older individuals’DENN Fall Risks Assessment Scale score was 11.73±7.13,and 62.2%of the participants were in the high-risk group.Barthel Index of Activities of Daily Living(ADL)mean score was 68.03±25.36,and 45.1%of the participants were in the moderately dependent group.There was a statistically significant,negative correlationship between Barthel Index of ADL score and age and DENN Fall Risks Assessment Scale score.In addition,there was a statistically significant,positive relationship between the DENN Fall Risks Assessment Scale score and age(p<0.01).Conclusions:This study found that level of dependency and fall risks increased with the increase in age.Effective global and multidisciplinary interventions are needed to decrease older individuals’dependency levels and fall risks today when the number of older individuals is increasing.展开更多
This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of...This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of constant electric potential in time ε and the curve of the discharge process through two fixed resistors. The first resistor R<sub>Co</sub> is a control that aims to prevent sudden variations in the intensity of the electric current i<sub>1</sub>(t) present at the terminals of the electrochemical supercapacitor at the beginning of the charging process. The second resistor is the internal resistance R<sub>A</sub> of the ammeter used in the calculation of the intensity of the electric current i<sub>1</sub>(t) over time in the charging and discharging processes. The mathematical equations generated were based on a 2R(C + kU<sub>C</sub>(t)) electrical circuit model and allowed to simulate the effects of the potential-dependent capacitance (kU<sub>C</sub>(t)) on the charge and discharge curves and hence on the calculated values of the fixed capacitance C, the equivalent series resistance (ESR), the equivalent parallel resistance (EPR) and the electrical potential dependent capacitance index k.展开更多
A silver electrode was anodized in lowly concentrated potassium chloride solution almost under the steady state to generate a deposit of silver chloride on the electrode, and the deposit was cathodically stripped by l...A silver electrode was anodized in lowly concentrated potassium chloride solution almost under the steady state to generate a deposit of silver chloride on the electrode, and the deposit was cathodically stripped by linear potential scan to evaluate the reduction charge. Then the oxidation charge was larger than the reduction one. Since the equality was valid for long term chronocoulometry at the double potential step, the inequality is not due to any irreversibility of electrode reactions, but can be attributed to the process of the cathodic potential scan. A reason for the inequality is the negative charge of the capacitance involved in the electrode reaction, which has been observed in simple, dissolved redox species like a ferrocenyl derivative. The negative capacitive currents are conspicuous for high concentrations of redox species on the electrode because they result from the orientation of the dipoles of the redox species coupled with counterion, of which direction is opposite to that of the solvent dipoles. If a silver chloride film was thin enough to be regarded as a monolayer, we found that half of the cathodic stripping charge should be lost by the negative capacitance.展开更多
In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs), we demonst...In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs), we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times (15 s, 17 s and 19 s). The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----(0.20--1.59) p^s and Dit :(0.55-1.08)x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively.展开更多
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electric...Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters (per unit length) obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.展开更多
Recent development of the peer-to-peer (P2P) live streaming technique has brought unprecedented new momentum to the Internet with the characters of effective, scalable, and low cost. However, before these applicatio...Recent development of the peer-to-peer (P2P) live streaming technique has brought unprecedented new momentum to the Internet with the characters of effective, scalable, and low cost. However, before these applications can be successfully deployed as commercial applications, efficient access control mechanisms are needed. This work based on earlier research of the secure streaming architecture in Trust- Stream, analyzes how to ensure that only authorized users can access the original media in the P2P live streaming system by adopting a user authentication and key management scheme. The major features of this system include (1) the management server issues each authorized user a unique public key certificate, (2) the one-way hash chain extends the certificate's lifetime, (3) the original media is encrypted by the session key and delivered to the communication group, and (4) the session key is periodically updated and distributed with the media. Finally, analyses and test results show that scheme provides a secure, scalable, reliable, and efficient access control solution for P2P live streaming systems.展开更多
Porcine reproductive and respiratory syndrome(PRRS)is one of the most significant diseases affecting the pig industry worldwide.The PRRSV mutation rate is the highest among the RNA viruses.To date,NADC30-like PRRSV an...Porcine reproductive and respiratory syndrome(PRRS)is one of the most significant diseases affecting the pig industry worldwide.The PRRSV mutation rate is the highest among the RNA viruses.To date,NADC30-like PRRSV and highly pathogenic PRRSV(HP-PRRSV)are the dominant epidemic strains in China;however,commercial vaccines do not always provide sufficient cross-protection,and the reasons for insufficient protection are unclear.This study isolated a wild-type NADC30-like PRRSV,SX-YL1806,from Shaanxi Province.Vaccination challenge experiments in piglets showed that commercial modified live virus(MLV)vaccines provided good protection against HP-PRRSV.However,it could not provide sufficient protection against the novel strain SXYL1806.To explore the reasons for this phenomenon,we compared the genomic homology between the MLV strain and HP-PRRSV or NADC30-like PRRSV and found that the MLV strain had a lower genome similarity with NADC30-like PRRSV.Serum neutralization assay showed that MLV-immune serum slightly promoted the homologous HP-PRRSV replication and significantly promoted the heterologous NADC30-like PRRSV strain replication in vitro,suggesting that antibody-dependent enhancement(ADE)might also play a role in decreasing MLV protective efficacy.These findings expand our understanding of the potential factors affecting the protective effect of PRRSV MLV vaccines against the NADC30-like strains.展开更多
基金the Department of Science and Technology and Biotechnology,West Bengal,India(1433(Sanc.)/STBT-11012(20)/8/2021-ST SEC).
文摘Forest resources play a vital role in supporting the livelihoods of rural communities residing in forest-rich areas.In India,a forest-rich country,a significant proportion of non-timber forest products(NTFPs)is consumed locally,supporting numerous rural communities relying on forests for essential resources,such as firewood,timber,and NTFPs.This study focuses on two forest-dominant districts in West Bengal of India,namely,Jhargram District and Paschim Medinipur District.Furthermore,this study aims to enhance the understanding of forest-dependent communities by comparing the standard of living among different village classes.Thus,we categorized villages into three classes based on the distance from home to forests,including inner villages,fringe villages,and outer villages.Through focus group discussions and household surveys,we explored the sources of local economy,income sources of household,and reasons for economic diversification in different village classes.The study findings confirm that substantial variations existed in the income sources and the standard of living in these villages.Forest income varied dramatically among the three village classes,with inner villages having greater forest income than fringe villages and outer villages.Meanwhile,households in outer villages depended on forests and engaged in diverse economic activities for their livelihoods.Compared with inner and fringe villages,households in outer villages derived a significant portion of their income from livestock.This discrepancy can be attributed to challenges,such as inadequate transportation,communication,and underdeveloped market chains in inner villages.Moreover,these findings emphasize the need to develop sustainable forest management practices,create alternative income-generation opportunities,and improve infrastructure and market access in inner villages,as well as promote economic diversification in outer villages.Through targeted policy measures,these forest-rich regions can achieve improved livelihoods,enhanced standard of living,and increased resilience for their communities.
基金Project supported by the National Natural Science Foundation of China(Grant No.60736033)the Fundamental Research Funds for the Central Universities(Grant No.JY10000904009)
文摘This paper reports fluorine plasma treatment enhancement-mode HEMTs (high electronic mobility transistors) EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with TT = (0.5 - 6) ms and DT : (1 - 5)×10^13 cm^-2. eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with TW(f)= (0.2 - 2) μs and slow with TT(s) = (0.5 - 6) ms. The density of trap states evaluated on the EHEMTs is Dw(f) : (1 - 3) × 10^12 cm^-2. eV^-1 and DT(s) =(2 - 6) × 10^12 cm-2. eV-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.
文摘Au/n-Si (MS) structures with a high dielectric interlayer (0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms (ND), barrier height ( ФB( C - V) ), depletion layer width (WD) and series resistance (Rs) show fairly large illumination dispersion. The voltage-dependent profile of surface states (Nss) and resistance of the structure (Ri ) are also obtained by using the dark-illumination capacitance (Cdark- Cm) and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB(O- V) and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB(C - V) increases. The experimental results suggest that the use of a high dielectric interlayer (0.03 graphene-doped PVA) considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.
文摘Objective:To investigate the relationship between fall risks and maintaining activities of daily living in individuals aged 65 and over.Methods:This study is cross-sectional.It was conducted with 233 individuals who were aged 65 and over in Family Health Centers located in the eastern part of Turkey between February and June 2018.Results:The mean older individuals’DENN Fall Risks Assessment Scale score was 11.73±7.13,and 62.2%of the participants were in the high-risk group.Barthel Index of Activities of Daily Living(ADL)mean score was 68.03±25.36,and 45.1%of the participants were in the moderately dependent group.There was a statistically significant,negative correlationship between Barthel Index of ADL score and age and DENN Fall Risks Assessment Scale score.In addition,there was a statistically significant,positive relationship between the DENN Fall Risks Assessment Scale score and age(p<0.01).Conclusions:This study found that level of dependency and fall risks increased with the increase in age.Effective global and multidisciplinary interventions are needed to decrease older individuals’dependency levels and fall risks today when the number of older individuals is increasing.
文摘This study presents the deduction of time domain mathematical equations to simulate the curve of the charging process of a symmetrical electrochemical supercapacitor with activated carbon electrodes fed by a source of constant electric potential in time ε and the curve of the discharge process through two fixed resistors. The first resistor R<sub>Co</sub> is a control that aims to prevent sudden variations in the intensity of the electric current i<sub>1</sub>(t) present at the terminals of the electrochemical supercapacitor at the beginning of the charging process. The second resistor is the internal resistance R<sub>A</sub> of the ammeter used in the calculation of the intensity of the electric current i<sub>1</sub>(t) over time in the charging and discharging processes. The mathematical equations generated were based on a 2R(C + kU<sub>C</sub>(t)) electrical circuit model and allowed to simulate the effects of the potential-dependent capacitance (kU<sub>C</sub>(t)) on the charge and discharge curves and hence on the calculated values of the fixed capacitance C, the equivalent series resistance (ESR), the equivalent parallel resistance (EPR) and the electrical potential dependent capacitance index k.
文摘A silver electrode was anodized in lowly concentrated potassium chloride solution almost under the steady state to generate a deposit of silver chloride on the electrode, and the deposit was cathodically stripped by linear potential scan to evaluate the reduction charge. Then the oxidation charge was larger than the reduction one. Since the equality was valid for long term chronocoulometry at the double potential step, the inequality is not due to any irreversibility of electrode reactions, but can be attributed to the process of the cathodic potential scan. A reason for the inequality is the negative charge of the capacitance involved in the electrode reaction, which has been observed in simple, dissolved redox species like a ferrocenyl derivative. The negative capacitive currents are conspicuous for high concentrations of redox species on the electrode because they result from the orientation of the dipoles of the redox species coupled with counterion, of which direction is opposite to that of the solvent dipoles. If a silver chloride film was thin enough to be regarded as a monolayer, we found that half of the cathodic stripping charge should be lost by the negative capacitance.
基金supported by the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002)the National Natural Science Foundation of China (Grant No. 60736033)
文摘In this paper, in order to solve the interface-trap issue and enhance the transconductance induced by high-k dielectric in metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs), we demonstrate better performances of recessed-gate A1203 MIS-HEMTs which are fabricated by Fluorine-based Si3N4 etching and chlorine- based A1CaN etching with three etching times (15 s, 17 s and 19 s). The gate leakage current of MIS-HEMT is about three orders of magnitude lower than that of A1GaN/CaN HEMT. Through the recessed-gate etching, the transconductanee increases effectively. When the recessed-gate depth is 1.02 nm, the best interface performance with Tit----(0.20--1.59) p^s and Dit :(0.55-1.08)x 1012 cm-2.eV- 1 can be obtained. After chlorine-based etching, the interface trap density reduces considerably without generating any new type of trap. The accumulated chlorine ions and the N vacancies in the AIGaN surface caused by the plasma etching can degrade the breakdown and the high frequency performances of devices. By comparing the characteristics of recessed-gate MIS-HEMTs with different etching times, it is found that a low power chlorine-based plasma etching for a short time (15 s in this paper) can enhance the performances of MIS-HEMTs effectively.
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
基金Supported by the National Natural Science Foundation of China (No. 90307016) the Basic Research Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList)
文摘Transmission lines (T-Lines) are widely used in millimeter wave applications on silicon-based complementary metal-oxide semiconductor (CMOS) technology. Accurate modeling of T-lines to capture the related electrical effects has, therefore, become increasingly important. This paper describes a method to model the capacitance and conductance of T-Lines on CMOS multilayer, Iossy substrates based on conformal mapping, and region subdivision. Tests show that the line parameters (per unit length) obtained by the method are frequency dependent and very accurate. The method is also suitable for parallel multiconductor interconnect modeling for high frequency circuits.
基金Supported by the National Natural Science Foundation of China(No.60673184)the National High-Tech Research and Development(973) Program of China(No.2007AA01Z419)+1 种基金the National Basic Research(863) Program of China(No.2008CB317101)Tsinghua-ChinaCache CDN Program
文摘Recent development of the peer-to-peer (P2P) live streaming technique has brought unprecedented new momentum to the Internet with the characters of effective, scalable, and low cost. However, before these applications can be successfully deployed as commercial applications, efficient access control mechanisms are needed. This work based on earlier research of the secure streaming architecture in Trust- Stream, analyzes how to ensure that only authorized users can access the original media in the P2P live streaming system by adopting a user authentication and key management scheme. The major features of this system include (1) the management server issues each authorized user a unique public key certificate, (2) the one-way hash chain extends the certificate's lifetime, (3) the original media is encrypted by the session key and delivered to the communication group, and (4) the session key is periodically updated and distributed with the media. Finally, analyses and test results show that scheme provides a secure, scalable, reliable, and efficient access control solution for P2P live streaming systems.
基金This research was supported by the National Natural Science Foundation of China(32172846)the Earmarked Fund for CARS-35,the Science and Technology Major Project of Gansu Province(22ZD6NA001)+4 种基金the Science Foundation for Distinguished Young Scholars of Shaanxi Province(2021JC-18)the Natural Science Foundation of Gansu Province(23JRRA1153)the Science and Technology Plan Project of Gansu Province(23JRRA561)the Chinese Academy of Agricultural Science and Technology Innovation Project(CAAS-ASTIP-JBGS-20210602)the Strategic Priority Research Program of the National Center of Technology Innovation for Pigs(NCTIP-XD/C03).
文摘Porcine reproductive and respiratory syndrome(PRRS)is one of the most significant diseases affecting the pig industry worldwide.The PRRSV mutation rate is the highest among the RNA viruses.To date,NADC30-like PRRSV and highly pathogenic PRRSV(HP-PRRSV)are the dominant epidemic strains in China;however,commercial vaccines do not always provide sufficient cross-protection,and the reasons for insufficient protection are unclear.This study isolated a wild-type NADC30-like PRRSV,SX-YL1806,from Shaanxi Province.Vaccination challenge experiments in piglets showed that commercial modified live virus(MLV)vaccines provided good protection against HP-PRRSV.However,it could not provide sufficient protection against the novel strain SXYL1806.To explore the reasons for this phenomenon,we compared the genomic homology between the MLV strain and HP-PRRSV or NADC30-like PRRSV and found that the MLV strain had a lower genome similarity with NADC30-like PRRSV.Serum neutralization assay showed that MLV-immune serum slightly promoted the homologous HP-PRRSV replication and significantly promoted the heterologous NADC30-like PRRSV strain replication in vitro,suggesting that antibody-dependent enhancement(ADE)might also play a role in decreasing MLV protective efficacy.These findings expand our understanding of the potential factors affecting the protective effect of PRRSV MLV vaccines against the NADC30-like strains.