In this article,a high-order scheme,which is formulated by combining the quadratic finite element method in space with a second-order time discrete scheme,is developed for looking for the numerical solution of a two-d...In this article,a high-order scheme,which is formulated by combining the quadratic finite element method in space with a second-order time discrete scheme,is developed for looking for the numerical solution of a two-dimensional nonlinear time fractional thermal diffusion model.The time Caputo fractional derivative is approximated by using the L2-1formula,the first-order derivative and nonlinear term are discretized by some second-order approximation formulas,and the quadratic finite element is used to approximate the spatial direction.The error accuracy O(h3+t2)is obtained,which is verified by the numerical results.展开更多
Because charge carriers of many organic semiconductors(OSCs)exhibit fractional drift diffusion(Fr-DD)transport properties,the need to develop a Fr-DD model solver becomes more apparent.However,the current research on ...Because charge carriers of many organic semiconductors(OSCs)exhibit fractional drift diffusion(Fr-DD)transport properties,the need to develop a Fr-DD model solver becomes more apparent.However,the current research on solving the governing equations of the Fr-DD model is practically nonexistent.In this paper,an iterative solver with high precision is developed to solve both the transient and steady-state Fr-DD model for organic semiconductor devices.The Fr-DD model is composed of two fractionalorder carriers(i.e.,electrons and holes)continuity equations coupled with Poisson’s equation.By treating the current density as constants within each pair of consecutive grid nodes,a linear Caputo’s fractional-order ordinary differential equation(FrODE)can be produced,and its analytic solution gives an approximation to the carrier concentration.The convergence of the solver is guaranteed by implementing a successive over-relaxation(SOR)mechanism on each loop of Gummel’s iteration.Based on our derivations,it can be shown that the Scharfetter–Gummel discretization method is essentially a special case of our scheme.In addition,the consistency and convergence of the two core algorithms are proved,with three numerical examples designed to demonstrate the accuracy and computational performance of this solver.Finally,we validate the Fr-DD model for a steady-state organic field effect transistor(OFET)by fitting the simulated transconductance and output curves to the experimental data.展开更多
基金the National Natural Science Fund(11661058,11761053)Natural Science Fund of Inner Mongolia Autonomous Region(2016MS0102,2017MS0107)+1 种基金Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region(NJYT-17-A07)National Undergraduate Innovative Training Project of Inner Mongolia University(201710126026).
文摘In this article,a high-order scheme,which is formulated by combining the quadratic finite element method in space with a second-order time discrete scheme,is developed for looking for the numerical solution of a two-dimensional nonlinear time fractional thermal diffusion model.The time Caputo fractional derivative is approximated by using the L2-1formula,the first-order derivative and nonlinear term are discretized by some second-order approximation formulas,and the quadratic finite element is used to approximate the spatial direction.The error accuracy O(h3+t2)is obtained,which is verified by the numerical results.
基金This work was supported in part by the National Science Foundation through Grant CNS-1726865by the USDA under Grant 2019-67021-28990.
文摘Because charge carriers of many organic semiconductors(OSCs)exhibit fractional drift diffusion(Fr-DD)transport properties,the need to develop a Fr-DD model solver becomes more apparent.However,the current research on solving the governing equations of the Fr-DD model is practically nonexistent.In this paper,an iterative solver with high precision is developed to solve both the transient and steady-state Fr-DD model for organic semiconductor devices.The Fr-DD model is composed of two fractionalorder carriers(i.e.,electrons and holes)continuity equations coupled with Poisson’s equation.By treating the current density as constants within each pair of consecutive grid nodes,a linear Caputo’s fractional-order ordinary differential equation(FrODE)can be produced,and its analytic solution gives an approximation to the carrier concentration.The convergence of the solver is guaranteed by implementing a successive over-relaxation(SOR)mechanism on each loop of Gummel’s iteration.Based on our derivations,it can be shown that the Scharfetter–Gummel discretization method is essentially a special case of our scheme.In addition,the consistency and convergence of the two core algorithms are proved,with three numerical examples designed to demonstrate the accuracy and computational performance of this solver.Finally,we validate the Fr-DD model for a steady-state organic field effect transistor(OFET)by fitting the simulated transconductance and output curves to the experimental data.
