We present a 1 × 4 Y-branch digital optical switch in which S-bend variable optical attenuators are integrated. The S-bend waveguides, which are always introduced to connect the switch and the standard fiber arra...We present a 1 × 4 Y-branch digital optical switch in which S-bend variable optical attenuators are integrated. The S-bend waveguides, which are always introduced to connect the switch and the standard fiber array, are made use of and designed as variable optical attenuators. A compact device with low crosstalk and larger branching-angle is obtained. The device is fabricated on the thermo-optic polymer materials,and the performance of the device is measured. With an applied driving power of less than 200mW, the device has a low crosstalk of less than - 35dB at a wavelength of 1.55 μm.展开更多
We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable las...We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable laser, and an arrayed-waveguide grating router. A packet transfer by two-bit optical header was achieved for the first time.展开更多
We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the p...We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology.Numerical simulations resulted in an IOFF of 8×10^-17A/ m, ION of 9 A/ m, ION/IOFF of 1×10^11,subthreshold slope of 9.33 m V/dec and DIBL of 87 m V/V for GaSb/InAs JLTFET at a temperature of 300 K,gate length of 20 nm, HfO2 gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.4 V.展开更多
To solve the troubles in quality testing and fault diagnosis for producing and maintaining of thedigital SPC (stored program control) switching system, in view of type CIPT-2000 SPC product, manufac-tured by CY colleg...To solve the troubles in quality testing and fault diagnosis for producing and maintaining of thedigital SPC (stored program control) switching system, in view of type CIPT-2000 SPC product, manufac-tured by CY college, the fault diaguosis algorithm and method of the simulated SLC (subscriber line circuit)for the SPC researched by ourselves are presented: hardware and software structure for the test system aredesigned and impleinented by C and assembly programs. Through practice it shows that the system is reli-able, and the method is practical. Efficiency ofproducing and maintaining on the printed circuits of SLC isgreatly raised.展开更多
文摘We present a 1 × 4 Y-branch digital optical switch in which S-bend variable optical attenuators are integrated. The S-bend waveguides, which are always introduced to connect the switch and the standard fiber array, are made use of and designed as variable optical attenuators. A compact device with low crosstalk and larger branching-angle is obtained. The device is fabricated on the thermo-optic polymer materials,and the performance of the device is measured. With an applied driving power of less than 200mW, the device has a low crosstalk of less than - 35dB at a wavelength of 1.55 μm.
文摘We demonstrate the routing operation of optical packets by an optical packet switch consisting of an optical digital-to-analog conversion-type header processor, a wavelength converter using an electrically-tunable laser, and an arrayed-waveguide grating router. A packet transfer by two-bit optical header was achieved for the first time.
文摘We present a GaSb/In As junctionless tunnel FET and investigate its static device characteristics. The proposed structure presents tremendous performance at a very low supply voltage of 0.4 V. The key idea is to the present device architecture, which can be exploited as a digital switching device for sub 20 nm technology.Numerical simulations resulted in an IOFF of 8×10^-17A/ m, ION of 9 A/ m, ION/IOFF of 1×10^11,subthreshold slope of 9.33 m V/dec and DIBL of 87 m V/V for GaSb/InAs JLTFET at a temperature of 300 K,gate length of 20 nm, HfO2 gate dielectric thickness of 2 nm, film thickness of 10 nm, low-k spacer thickness of 10 nm and VDD of 0.4 V.
文摘To solve the troubles in quality testing and fault diagnosis for producing and maintaining of thedigital SPC (stored program control) switching system, in view of type CIPT-2000 SPC product, manufac-tured by CY college, the fault diaguosis algorithm and method of the simulated SLC (subscriber line circuit)for the SPC researched by ourselves are presented: hardware and software structure for the test system aredesigned and impleinented by C and assembly programs. Through practice it shows that the system is reli-able, and the method is practical. Efficiency ofproducing and maintaining on the printed circuits of SLC isgreatly raised.
