Wavelength-tunable organic semiconductor lasers based on elastic distributed feedback gratings

Wavelength-tunable organic semiconductor lasers based on mechanically stretchable polydimethylsiloxane (PDMS) gratings were developed. The intrinsic stretchability of PDMS was explored to modulate the period of the distributed feedback gratings for fine tuning the lasing wavelength. Notably, elastic lasers based on three typical light-emitting molecules show com-parable lasing threshold values analogous to rigid devices and a continuous wavelength tunability of about 10 nm by mechanic-al stretching. In addition, the stretchability provides a simple solution for dynamically tuning the lasing wavelength in a spec-tral range that is challenging to achieve for inorganic counterparts. Our work has provided a simple and efficient method of fab-ricating tunable organic lasers that depend on stretchable distributed feedback gratings, demonstrating a significant step in the advancement of flexible organic optoelectronic devices.

Numerical Simulation of External-Cavity Distributed Feedback Semiconductor Laser

We propose a theoretical model to describe external-cavity distributed feedback semiconductor lasers and investigate the impact of the number of external feedback points on linewidth and side-mode suppression ratio through numerical simulation. The simulation results demonstrate that the linewidth of external-cavity semiconductor lasers can be reduced by increasing the external cavity length and feedback ratio, and adding more external feedback points can further narrow the linewidth and enhance the side mode suppression ratio. This research provides insight into the external cavity distributed feedback mechanism and can guide the design of high-performance external cavity semiconductor lasers. .

High-Power Distributed Feedback Laser Diodes Emitting at 820nm

By etching a second-order grating directly into the Al-free optical waveguide region of a ridgewaveguide（RW） AlGaInAs/AlGaAs distributed feedback（DFB） laser diode,a front facet output power of 30mW is obtained at about 820nm with a single longitudinal mode. The Al-free grating surface permits the re-growth of a high-quality cladding layer that yields excellent device performance. The threshold current of these laser diodes is 57mA,and the slope efficiency is about 0.32mW/mA.

2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm^2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.

Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency

A 7.8-μm surface emitting second-order distributed feedback quantum cascade laser （DFB QCL） structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm-1. Using a π phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier

Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback （DFB） lasers using varied ridge width with a 4 x 1-multimode-interference （MMI） optical combiner and a semiconductor optical amplifier （SOA） is demon- strated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio （SMSR） exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously.

Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes

Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800- 850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback （DFB） laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.

Theoretical modelling of the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers

By employing a simple model of describing three-level lasers, we have theoretically investigated the effect of photon lifetime on the output dynamics of Er-doped distributed feedback fibre lasers. And based on the theoretical analysis we have proposed a promising method to suppress self-pulsing behaviour in the fibre lasers.

Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology

A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.

A 795 nm gain coupled distributed feedback semiconductor laser based on tilted waveguides

The 795 nm distributed feedback lasers have great application in pumping the Rb D1 transition.In this paper,in order to realize specific 795 nm lasing,we designed tilted ridge distributed feedback lasers based on purely gain coupled effect induced by periodic current injection windows through changing the angle of the tilted ridge.The fabricated devices were cleaved into 2 mm-cavity-length,including 5 tilted angles.The peak output powers of all devices were above 30 mW.Single longitudinal mode lasing was realized in all tilted Fabry-Perot cavities using periodic current injection windows,with side mode suppression ratio over 30 dB.The total wavelength range covered 8.656 nm at 20℃.It was disclosed theoretically and experimentally that the output powers,threshold currents,and central wavelengths of the tilted ridge purely gain coupled DFB lasers were relevant to the tilted angles.The results will be instructive for future design of DFB laser arrays with different central wavelengths.

Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density

We report on the room-temperature cascade laser （QCL） at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback （DFB） quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃.

Measurement and Characterization of Microwave Interaction between Integrated Distributed Feedback Laser Diode and Electro-Absorption Modulator

Integrated electro-absorption-modulated distributed feedback laser diodes(EMLs)are attracting much interest in optical communications for the advantages of a compact structure,low power consumption,and high-speed modulation.In integrated EML,the microwave interaction between the distributed feedback laser diode(DFB-LD)and the electro-absorption modulator(EAM)has a nonnegligible influence on the modulation performance,especially at the high-frequency region.In this paper,integrated EML was investigated as a three-port network with two electrical inputs and a single optical output,where the scattering matrix of the integrated device was theoretically deduced and experimentally measured.Based on the theoretical model and the measured data,the microwave equivalent circuit model of the integrated device was established,from which the microwave interaction between DFB-LD and EAM was successfully extracted.The results reveal that the microwave interaction within integrated EML contains both the electrical isolation and optical coupling.The electrical isolation is bidirectional while the optical coupling is directional,which aggravates the microwave interaction in the direction from DFB-LD to EAM.

Modulation bandwidth enhancement in monolithic integrated two-section DFB lasers based on the detuned loading effect

Modulation bandwidth enhancement in a directly modulated two-section distributed feedback(TS-DFB)laser based on a detuned loading effect is investigated and experimentally demonstrated.The results show that the 3-dB bandwidth of the TS-DFB laser is increased to 17.6 GHz and that chirp parameter can be reduced to 2.24.Compared to the absence of a detuned loading effect,there is a 4.6 GHz increase and a 2.45 reduction,respectively.After transmitting a 10 Gb/s non-return-to-zero(NRZ)signal through a 5-km fiber,the modulation eye diagram still achieves a large opening.Eight-channel laser arrays with precise wavelength spacing are fabricated.Each TS-DFB laser in the array has side mode suppression ratios(SMSR)>49.093 dB and the maximum wavelength residual<0.316 nm.

Brightness enhancement on random-distributed-feedback Raman fiber lasers pumped by multimode diodes

The power scaling on short wavelength(SW)fiber lasers operating around 1μm are in significant demand for applications in energy,environment and industry.The challenge for performance scalability of high-power SW lasers based on rare-earth-doped fiber primarily lies in the physical limitations,including reabsorption,amplified spontaneous emission and parasitic laser oscillation.Here,we demonstrate an all-fiberized,purely passive SW(1018 nm)randomdistributed-feedback Raman fiber laser(RRFL)to validate the capability of achieving high-power output at SWs based on multimode laser diodes(LDs)direct pumping.Directly pumped by multimode LDs,the high-brightness RRFL delivers over 656 W,with an electro-optical efficiency of 20%relative to the power.The slope efficiency is 94%.The beam quality M2factor is 2.9(which is~20 times that of the pump)at the maximum output signal power,achieving the highest brightness enhancement of 14.9 in RRFLs.To the best of our knowledge,this achievement also represents the highest power record of RRFLs utilizing multimode diodes for direct pumping.This work may not only provide a new insight into the realization of high-power,high-brightness RRFLs but also is a promising contender in the power scaling of SWs below 1μm.

Analysis of gain distribution in cladding-pumped thulium-doped fiber laser and optical feedback inhibition problem in fiber-bulk laser system

The steady-state gain distribution in cladding pumped thulium-doped fiber laser（TDFL） is analytically and numerically solved based on the rate equations including loss coefficients and cross relaxation effect. With the gain curve, a problem, which is named optical feedback inhibition（OFI） and always occurs in tandem TDFL-Ho：YAG laser system, is analyzed quantitatively. The actual characteristics of output spectra and power basically prove the conclusion of theoretical analysis. Then a simple mirror-deflected L-shaped cavity is employed to restrain the external feedback and simplify the structure of fiber-bulk Ho：YAG laser. Finally, 25 W of 2097-nm laser power and 51.2% of optical-to-optical conversion efficiency are obtained, and the beam quality factor is less than 1.43 obtained by knife-edge method.

高成品率大耦合因子DFB激光二极管芯片设计与制备

设计并制备了一种基于相移光栅的大耦合因子分布反馈(DFB)激光二极管芯片,解释了相移光栅在大耦合因子下实现芯片高成品率的机理。采用传输矩阵法模拟了不同耦合因子下随机相位对均匀光栅和相移光栅激光二极管芯片单模特性的影响,发现对于常规均匀光栅DFB结构,随着耦合因子的增加,芯片阈值增益差会明显降低,从而降低芯片单模成品率;而相移光栅DFB结构在不同耦合因子下,芯片阈值增益差并没有明显变化,仍能够保证比较高的单模成品率。采用电子束光刻制作了1/4波长相移光栅和均匀光栅并进行了对比,最后制备出大归一化耦合因子(κL=2.1)的相移光栅DFB激光器二极管芯片。测试统计数据显示,与均匀光栅激光二极管芯片相比,新型相移光栅DFB激光二极管芯片成品率明显高,达70%以上。与常规归一化耦合因子(κL≈1.2)DFB激光二极管芯片相比,在宽温(-40~95℃)下,新型大耦合因子激光二极管芯片的光谱单模特性更稳定,同时具有更低的阈值电流,在低工作电流(30 mA)下,芯片的-3 dB带宽大于18 GHz,满足传输速率为25 Gbit/s的高速传输协议要求。

Monolithic Integration of Electro-Absorption Modulators and DFB Lasers by Modified Double Stack Active Layer Approach

Monolithic electro absorption modulated distributed feedback(DFB) lasers are proposed and fabricated by using a modified double stack active layer.The 38mA threshold,9dB extinction ratio (from 0 5V to 3 0V),and about 5mW output power at the 100mA operation current are achieved.Compared with other reported results (only 1 5mW at the same operation current) of the traditional stack active structure,the proposed structure improves the output power of devices.

基于REC-DFB可调谐激光器的无波长校正FBG传感系统

提出了一种无波长校正的光纤布拉格光栅(FBG)传感系统,可在未对基于重构等效啁啾(REC)技术制造的扫频DFB激光器进行波长线性校正的情况下,识别波长变化,并解调出光栅传感器的温度变化。所提无波长校正FBG传感系统可以在200℃范围内进行精确的温度检测,测得的波长与温度的线性系数1-R^(2)仅为0.004 4。该传感系统光源在1 kHz的锯齿波调制下,调谐范围可达2.5 nm,且测量过程中无需额外波长校正器件。

Optical microwave generation using two parallel DFB lasers integrated with Y-branch waveguide coupler

A new device of two parallel distributed feedback （DFB） lasers integrated monolithically with Y-branch waveguide coupler was fabricated by means of quantum well intermixing. Optical microwave signal was generated in the Y-branch waveguide coupler through frequency beating of the two laser modes coming from two DFB laser in parallel, which had a small difference in frequency. Continuous rapid tuning of optical microwave signal from 13 to 42 GHz were realized by adjusting independently the driving currents injected into the two DFB lasers.

Time-Delayed Feedback Control in a Single-Mode Laser System

The effects of time-delayed feedback control in a single-mode laser system is investigated.Using the smalltime delay approximation,the analytic expression of the stationary probability distribution function of the laser field isobtained.The mean,normalized variance and skewness of the steady-state laser intensity are calculated.It is found thatthe time-delayed feedback control can suppress the intensity fluctuation of the laser system.The numerical simulationsare in good agreement with the approximate analytic results.