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Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes
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作者 张宁 魏学成 +6 位作者 路坤熠 冯梁森 杨杰 薛斌 刘喆 李晋闽 王军喜 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第11期96-98,共3页
The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes (LEDs) is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelen... The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes (LEDs) is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law L α I^m, with smaller parameter m in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg- defect-related nonradiative centers in the active region. Furthermore, the forward current-voltage characteristics are improved. 展开更多
关键词 LEDs in it as InGaN Effect of Back diffusion of Mg dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes of on
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The effect of δ-doping and modulation-doping on Si-doped high Al content n-Al_xGa_(1-x)N grown by MOCVD
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作者 朱邵歆 闫建昌 +5 位作者 曾建平 张宁 司朝 董鹏 李晋闽 王军喜 《Journal of Semiconductors》 EI CAS CSCD 2013年第5期26-28,共3页
The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x = 0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect... The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1-xN (x = 0.55) epilayers grown by MOCVD has been investigated. Measured by XRD, AFM, contactless sheet resistance, and Hall-effect tests, 8-doped and modulation-doped n-Alx Ga1-xN have better crystal quality, surface morphology and electrical properties as compared with uniformly-doped n-AlxGa1-xN. These improvements are attributed to the SiNx growth mask induced by δ-doping layers and the dislocation-blocking effect induced by both growth techniques. In addition, due to the broadened doping profile ascribed to enhanced dopant diffusion at high growth temperatures (1150 ℃) ofn-Al0.55 Ga0.45N, modulation-doped n-Al0.55 Ga0.45N has similar properties as 8-doped n-Al0.55 Ga0.45N. 展开更多
关键词 n-Alx Ga1-xN MOCVD Δ-DOPING MODULATION-DOPING dopants diffusion
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