Design and analysis of doped left-handed materials

We devise three sorts of doped left-handed materials （DLHMs） by introducing inductors and capacitors into the traditional left-handed material （LHM） as heterogeneous elements. Some new properties are presented through finitedifference time-domain （FDTD） simulations. On the one hand, the resonance in the traditional LHM is weakened and the original pass band is narrowed by introducing inductors. On the other hand, the original pass band of the LHM can be shifted and a new pass band can be generated by introducing capacitors. When capacitors and inductors are introduced simultaneously, the resonance of traditional LHM is somewhat weakened and the number of original pass bands as well as its bandwidth can be changed.

Developing Suitable Sensitive Compound Semiconductor Materials Doped by Transition Metals for Occupational Thermoluminescence Dosimetry

The essential objective of radiation dosimetry is to develop suitable sensitive materials for different measurements in radiation fields. Our exploration is to find potentially suitable high gamma radiation dosimeters in the range from 0.5E4 to 1.5E4 Gy. Gamma rays source (60Co, 136 Gy/min) has been used. Many compound semiconductor materials were prepared and investigated. Thermoluminescence (TL) glow curve was analyzed into its component by analytical segregation program using computerized glow curve deconvolution (CGCD). Three zero dose readings for non-irradiated powders of the materials have been taken as lower limit of detection. The results indicated that some of the tested materials have exhibited TL linearly with respect to dose. In addition, dose response of these materials was found to be useful for high radiation dosimetry. Glow curve structures exhibited several peaks corresponding to the various energies of the emptied traps. Variation in the standard deviation for reusability cycles has been ten readout. The fading at ambient temperature was studied up to 60 days which reached a relative stability (~1.5% for all), 10 days after irradiation. A typical glow curve of CoPa which irradiated with 1.5E4 Gy was analyzed. Characterizations of tested materials indicated that crystals of ZnLa:Li, ZnLa:Cd, and ZnLa:Cr have stable and increasing thermoluminescent responses with high gamma radiation dose range. Special glow peaks can be used as estimators for absorbed doses as well as re-estimation for time elapsed exposures.

Spectroscopic study of the Pr-doped BiBO glass and Ca_4GdO(BO_3)_3 single crystals

Detailed spectroscopic studies of Pr3＋ ions in BiBO glass and Ca4GdO（BO3）3 crystal were performed. Experimental absorption spectra were measured at room temperature and assigned. The first principles discrete variational multielectron method was used to model the polarized absorption spectra of the Ca2GdO（BO3）3：Pr3＋; without any fitting parameters, the overall appearance of the spectra was reproduced satisfactorily. The energy intervals between different molecular orbitals in the [PrO6] cluster were estimated. The conventional Judd-Ofelt theory was used to calculate the oscillator strengths of the 4f-4f transitions in the BiBO：Pr3＋ system; the set of the phenomenological intensity parameters was determined.

Internalization of Foreign Ions into Meta-stable Lattices:a Case Study of Transition-metal-doped Brookite

The connections between the building units of meta-stable lattice were generally considered to be easily disturbed during the doping process, causing serious hindrances blocking the development of functional doped materials. In this work, the synthesis of doped brookite, a typical meta-stable phase of TiO2, has been explored novelly by in-situ adding of cations of VIIIB and IB,IIB elements in the 3rd period（Fe, Co, Ni, Cu, Zn） during the urea-lactate aided low-basicity hydrothermal process. The results showed that only Cu-doped brookite could be successfully synthesized with trace amount of copper intensively internalized into the brookite lattice, while the other dopants lead to the formation of anatase TiO2. Extensive characterizations indicated a two-step doping process, where copper ions were firstly dispersed in an amorphous layer on the lattice surface and then they were internalized into brookite lattice. Cu-doped brookite exhibited significantly enhanced photocatalytic activity in the phenol degradation under visible light compared to bare brookite. The enhancement of catalytic performance was assigned to the impurity band gap and the reduction of charge carriers＇ recombination introduced by the internalization of Cu ions. The investigation reported herein contributes to the understanding of complex ion-doping effects on the structures of meta-stable materials, and provides hints for obtaining other functional doped materials.

Comparison of GaN/AlGaN/AlN/GaN HEMTs Grown on Sapphire with Fe-Modulation-Doped and Unintentionally Doped GaN Buffer:Material Growth and Device Fabrication

AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.

Preparation and upconversion luminescence of YVO_4:Er^(3+),Yb^(3+)

YVO4：Er^3＋,Yb^3＋ with varying Yb^3＋ concentrations were prepared by a precipitation method.The results of X-ray diffraction （XRD） show that all the samples have a tetragonal zircon structure; the calculated average crystallite sizes are in the range of 14-22 nm.The lattice constants and cell volume of the samples decrease slightly with the increase in Yb^3＋ concentration.The upconversion luminescence spectra of all the samples were studied under 980 nm laser excitation.The strong green emission is observed,which is attributed to the 2^H11/2→4I15/2 and 4^S3/2→4^I15/2 transitions of Er^3＋,and the red emission peaks in 650-675 nm can be ignored.The emission intensity for the sample depends on the Yb^3＋concentration.These results reveal that the upconversion processes of YVO4：Er^3＋,Yb^3＋ are related to the structure and the doping Yb^3＋ concentration of the sample.

Synthesis and Electrochemical Characterization of Azomethine Containing N-Ethylcarbazole Group

Conjugated aromatic azomethines containing a carbazole group were synthesized. Their structures have been confirmed by IR, MS and UV spectrometries. When iodine was used as the dope to the conjugated compounds, the electrical conductivities （EC） of the doped conjugated compounds were increased by several orders of magnitude. The thermal stability of these two compounds investigated by TGA shows a good result, which guarantees the correct result of EC when the compounds are heated. As can be seen from the CV characterization of the electrochemical properties of these two compounds, the azomethine diamine and p-aminophenyl-9-ethylcarbazolyl azomethine possess electrochemical activity, which arises from the heteroatom of molecules.

Synthesis and Electrical Properties of La_ 0.8Sr_(0.2)-x Ca_xCo_(0.9)Fe_ 0.1O_3-δ

Effects of small amount of Ca doping in La site in LaCoO 3-based oxide on th e synthesis and electrical conductivity were investigated by using X-ray diffra ction (XRD), differential scanning calorimetry and thermogravimetry (DSC/TG), or dinary four-probe dc measurement methods. La 0.8Sr 0.2-xCa x Co 0.9Fe 0.1O 3-δ (LSCCF, 0≤x≤0.1) prepared by solid r eact ion synthesis is all of a single phase and the calcined process may be divided i nt o three stages: (1) decomposition of reactants; (2) formation of LaCoO 3-based oxides; and (3) formation of LSCCF solid solution. The maximum of electrical co nductivity of the LSCCF composites is above 100 S·cm -1 and the co nduction me chanism is attributed to the adiabatic-hopping of p-type small polarons.

Thermoelectric Properties of the CuGaTe_2 Crystal from First-principles Calculations:the Role of Doping and Temperature

The thermoelectric properties of CuGaTe2 crystal are investigated by using the first-principles method and semi-classical Boltzmann theory. We find that the electronic structure of CuGaTe2 is favorable for p-type doping. The transport coefficients can be tuned by doping and changing the work temperature to yield an optimized thermoelectric performance. The optimal doping concentration is 2 × 10^20 cm^-3, in which the maximum ZT value can reach 1.65 at 900 K. The results suggest CuGaTe2 might find promising applications as good thermoelectric materials, particularly at high temperature.

Controlling the electronic structure of SnO_2 nanowires by Mo-doping

Mo-doped SnO2 （MTO） nanowires are synthesized by an in-situ doping chemical vapour deposition method. Raman scattering spectra indicate that the lattice symmetry of MTO nanowires lowers with the increase of Mo doping, which implies that Mo ions do enter into the lattice of SnO2 nanowire. Ultraviolet-visible diffuse reflectance spectra show that the band gap of MTO nanowires decreases with the increase of Mo concentration. The photoluminescence emission of SnO2 nanowires around 580~nm at room temperature can also be controlled accurately by Mo-doping, and it is extremely sensitive to Mo ions and will disappear when the atomic ratio reaches 0.46%.

Black-phosphorus-based materials for application in solar cells

In the context of green development,the use of solar cells with renewable and environment-friendly characteristics has been rapidly growing.There has been a continuous search for materials that can enhance their performance.Black phosphorus,a new type of semiconductor material,has garnered significant attention due to its distinctive properties,particularly its direct band gap with tunable layers and high optoelectronic efficiency.This review summarizes the properties of black-phosphorus-based materials and focuses on their use as doping materials in various components of solar cells,such as the electron transport layer,hole transport layer,active layer,etc.The current challenges faced by black phosphorus materials and outlook on their future development have also been discussed.

Characterization and Electrochemical Properties of Nanostructured Zr-Doped Anatase TiO_2 Tubes Synthesized by Sol–Gel Template Route

A series of nanostructured Zr-doped anatase TiO_2 tubes with the Zr/Ti molar ratio of 0.01, 0.02, 0.03, and0.09 were prepared by a sol–gel technology on a carbon fiber template. The electrochemical performance of Zr-doped anatase TiO_2 as anodes for rechargeable lithium batteries was investigated and compared with undoped titania. Tests represented that after 35-fold charge/discharge cycling at C/10 the reversible capacity of Zr-doped titania（Zr/Ti = 0.03） reaches 135 m A h g^（-1）, while the capacity of undoped titania（Zr/Ti = 0） yielded only 50 m A h g^（-1）. Based on the results of the physicochemical investigation, three reasons of improving electrochemical performance of Zr-doped titania were suggested. According to the scanning electron microscopy and transmission electron microscopy, Zr^（4＋） doping induces a decrease in nanoparticle size, which facilitates the Li＋diffusion. The Raman investigations show the more open structure of Zr-doped TiO_2 as compared to undoped titania due to changing of the unit cell parameters, that significantly affects on the reversibility of the insertion/extraction process. The electrochemical impedance spectroscopy results indicate that substitution of Zr^（4＋） for Ti^（4＋） into anatase TiO_2 has favorable effects on the conductivity.

通过聚合物脱卤策略合成氧化硼掺杂碳及其高效O_(2)还原制H_(2)O_(2)

O_(2)通过电化学法直接合成H_(2)O_(2)是目前最有可能替代工业上高耗能的蒽醌氧化/还原法的合成方法,但其一直受限于难以开发出高效且低成本的电催化剂.在此,我们通过聚合物脱卤的绿色策略合成了氧化硼掺杂碳(O-BC)材料,将其用作2e-氧还原反应(ORR)的电极材料,采用电化学的方法制备H_(2)O_(2).通过实验调控硼源(H_(2)BO_(2))的用量和退火温度,优化了O-BC材料的催化活性.电化学测试表明:最佳的O-BC-2-650样品表现出高达98%的H_(2)O_(2)选择性;在H型碱性电解槽中H_(2)O_(2)平均产率为412.8 mmol gcat.^(-1)h^(-1).密度泛函理论计算模拟表明:与一个氧原子相连的硼原子是最佳的活性位点,在吸附O_(2)的氢化过程中获得最低的吉布斯自由能差(ΔG)0.03 e V;而没有与氧原子相连或者与两个氧原子相连的B原子则具有较大的ΔG(分别为0.08和0.10 e V).这项工作详细报道了一种用于生产H_(2)O_(2)的新型绿色低成本的无金属电催化剂的调控合成方法.

High performance nonvolatile organic field-effect transistor memory devices based on pyrene diimide derivative

Developing high-quality electret layer is important for the fabrication of highperformance nonvolatile organic field effect transistor memory devices(OFETNVMs).In this work,three representative aromatic diimide frameworks are employed for comparative studies as n-type doping materials for the electret layers in OFET-NVMs,which are naphthalene diimide(NDI),perylene diimide(PDI),and pyrene diimide(PyDI).When blended with polystyrene(PS)to prepare the electret layers,all the memory devices containing aromatic diimide dopants exhibited significantly improved performances compared with the undoped counterparts,indicating that low-lying LUMO energy levels of these dopants are beneficial for charge injection.All the devices with n-type dopants exhibited long retention times(more than 104 s)and good switching reliability in more than 400 continuous write-read-erase-read cycles.Among them,the PyDI-based memory device exhibited superior performance compared with other aromatic diimides,which achieved a memory window of 34.0 V,a trapping charge density of 1.98×1012 cm−2 along with an on/off ratio higher than 104.This work indicates that PyDI framework could be a new platform for the future design of n-type dopant for high-performance nonvolatile organic field-effect transistor memory devices.