CdSe quantum dot sensitized solar cells （QDSCs） modified with graphene quantum dots （GQDs） have been successfully achieved in this work for the first time. Satisfactorily, the optimized photovoltage （Voc） of the...CdSe quantum dot sensitized solar cells （QDSCs） modified with graphene quantum dots （GQDs） have been successfully achieved in this work for the first time. Satisfactorily, the optimized photovoltage （Voc） of the modified QDSCs was approximately 0.04 V higher than that of plain CdSe QDSCs, consequently improving the photovoltaic performance of the resulting QDSCs. Served as a novel coating on the CdSe QD sensitized photoanode, GQDs played a vital role in improving Voc due to the suppressed charge recombination which has been confirmed by electron impedance spectroscopy as well as transient photovoltage decay measure- ments. Moreover, different adsorption sequences, concentration and deposition time of GQDs have also been systematically investigated to boost the power conversion efficiency （PCE） of CdSe QDSCs. After the coating of CdSe with GQDs, the resulting champion CdSe QDSCs exhibited an improved PCE of 6.59% under AM 1.5G full one sun illumination.展开更多
松耦合变压器是电磁感应耦合式无线电能传输(inductively coupled power transfer,ICPT)系统中实现电能传输的重要设备。然而,松耦合变压器输出功率小、传输效率低的问题极大限制了其推广应用。提出了一种三端轴式松耦合变压器结构,分...松耦合变压器是电磁感应耦合式无线电能传输(inductively coupled power transfer,ICPT)系统中实现电能传输的重要设备。然而,松耦合变压器输出功率小、传输效率低的问题极大限制了其推广应用。提出了一种三端轴式松耦合变压器结构,分别针对该新型变压器相邻线圈对同名端同向和反向两种情况建立数学模型;然后对LCC-S补偿方式下基于三端轴式松耦合变压器的ICPT系统存在的频率分裂现象进行分析,通过仿真验证了三端轴式松耦合变压器可通过不同线圈对间的互感来提升系统的传输特性,并对同名端同向和同名端反向两种情况的输出功率和传输效率进行对比;最后通过实物实验证实了基于三端轴式松耦合变压器的ICPT系统能够提高输出功率和传输效率,同名端同向时传输效率较高,提高了16.4%;同名端反向时输出功率较高,提高了33.2%。展开更多
基金supported by the National Natural Science Foundation of China (21175043,91233102)the Fundamental Research Funds for the Central Universities for financial support
文摘CdSe quantum dot sensitized solar cells （QDSCs） modified with graphene quantum dots （GQDs） have been successfully achieved in this work for the first time. Satisfactorily, the optimized photovoltage （Voc） of the modified QDSCs was approximately 0.04 V higher than that of plain CdSe QDSCs, consequently improving the photovoltaic performance of the resulting QDSCs. Served as a novel coating on the CdSe QD sensitized photoanode, GQDs played a vital role in improving Voc due to the suppressed charge recombination which has been confirmed by electron impedance spectroscopy as well as transient photovoltage decay measure- ments. Moreover, different adsorption sequences, concentration and deposition time of GQDs have also been systematically investigated to boost the power conversion efficiency （PCE） of CdSe QDSCs. After the coating of CdSe with GQDs, the resulting champion CdSe QDSCs exhibited an improved PCE of 6.59% under AM 1.5G full one sun illumination.
文摘松耦合变压器是电磁感应耦合式无线电能传输(inductively coupled power transfer,ICPT)系统中实现电能传输的重要设备。然而,松耦合变压器输出功率小、传输效率低的问题极大限制了其推广应用。提出了一种三端轴式松耦合变压器结构,分别针对该新型变压器相邻线圈对同名端同向和反向两种情况建立数学模型;然后对LCC-S补偿方式下基于三端轴式松耦合变压器的ICPT系统存在的频率分裂现象进行分析,通过仿真验证了三端轴式松耦合变压器可通过不同线圈对间的互感来提升系统的传输特性,并对同名端同向和同名端反向两种情况的输出功率和传输效率进行对比;最后通过实物实验证实了基于三端轴式松耦合变压器的ICPT系统能够提高输出功率和传输效率,同名端同向时传输效率较高,提高了16.4%;同名端反向时输出功率较高,提高了33.2%。
文摘采用射频和脉冲磁控共溅射法并结合快速光热退火法制备了含硅量子点的SiC_x薄膜.采用掠入射X射线衍射、喇曼光谱、紫外-可见-近红外分光光度计和透射电子显微镜对薄膜进行表征.研究了脉冲溅射功率对薄膜中硅量子点数量、尺寸、晶化率和薄膜光学带隙的影响.结果表明:当溅射功率从70 W增至100 W时,硅量子点数量增多,尺寸增至5.33nm,晶化率增至68.67%,而光学带隙则减至1.62eV;随着溅射功率进一步增至110 W时,硅量子点数量减少,尺寸减至5.12nm,晶化率降至55.13%,而光学带隙却增至2.23eV.在本实验条件下,最佳溅射功率为100 W.
