This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a patte...This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010)the National Basic Research Program of China (Grant No. 2007CB936800)
文摘This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.
