The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional photonic crystals

An electrically driven, single-longitudinal-mode GaAs based photonic crystal （PC） ridge waveguide （RWG） laser emitting at around 850 nm is demonstrated. The single-longitudinal-mode lasing characteristic is achieved by introducing the PC to the RWG laser. The triangle PC is etched on both sides of the ridge by photolithography and inductive coupled plasma （ICP） etching. The lasing spectra of the RWG lasers with and without the PC are studied, and the result shows that the PC purifies the longitudinal mode. The power per facet versus current and current-voltage characteristics have also been studied and compared.

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on I-V Method

An experimental way for the thermal characterization of semiconductor lasers based on I V method under pulse driving conditions has been developed, with which the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser chips have been investigated. The results show that, by measuring and analyzing the I V characteristics under appropriate pulse driving conditions at different heat sink temperatures, the thermal resistance of the laser diodes could be easily deduced. The driving current and junction voltage waveforms of the laser chips under different pulse driving conditions are also discussed.

Optimization of High Power 1.55-μm Single Lateral Mode Fabry-Perot Ridge Waveguide Lasers

Optimization of the high power single-lateral-mode double-trench ridge waveguide semiconductor laser based on InGaAsP/InP quantum-well heterostructures with a separate confinement layer is reported. Two different waveguide structures of Fabry-Perot lasers emitting at a wavelength of 1.55 μm are fabricated. The influence of an effective lateral refractive index step on the maximum output power is investigated. A cw single mode output power of 165mW is obtained for a 1-mm-long uncoated laser.

Thermal Characterization of 1.3 μm InAsP/InGaAsP Ridge Waveguide MQW Lasers Based on Spectroscopy Method

An experimental way to analyze the thermal characterization of semiconductor lasers based on spectroscopy method under pulse driving conditions has been developed. By using this way the thermal characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide MQW laser diodes have been investigated. Results show that by measuring and analyzing the lasing spectra under appropriate driving parameters and temperature ranges, the thermal resistance of the laser diodes could be deduced easily. A higher thermal resistance of 640 K/W has been measured on a narrow ridge laser chip without soldering. Other thermal and spectral properties of the lasers have also been measured and discussed.

Supercontinuum Generation in Lithium Niobate Ridge Waveguides Fabricated by Proton Exchange and Ion Beam Enhanced Etching

We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths （around 800hm）. The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti：sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm （at -30 dB points）, from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication.

Broadband and efficient second harmonic generation in LiNbO_(3)-LiTaO_(3) composite ridge waveguides at telecom-band

Broadband nonlinear frequency conversions of optical waves are widely employed in multiple areas of optics and photonics. However, the broadening of conversion bandwidth is often at a cost of reduction in efficiency, which may induce a limitation on practical applications. Here we theoretically propose a novel design of LiNbO_(3) ridge waveguides on LiTaO_(3) substrates which can be used for efficient and broadband second harmonic generation. Through group velocity engineering of the ridge waveguides, acceptance bandwidth over 20 nm with a high conversion efficiency of > 25%W^(-1)·cm^(-2) is achieved at telecom-band.

Broadband millimeter-wave metasurface antenna array withprinted ridge gap waveguide for high front-to-back ratio

A novel broadband metasurface (MTS) antenna array with high front-to-back ratio (FBR) is proposed for 28 GHz millimeter-wave applications. With slot pairs loaded on patch cells, an aperturecoupled slotted-mushroom MTS antenna is designed to obtain broadband radiation characteristicswith a compact size. To suppress the backward radiation of this antenna, the printed ridge gapwaveguide (PRGW) technology with a perfect magnetic conductor (PMC) shielding made ofmushroom unit-cells underneath the microstrip feeding line is applied. On this basis, a 4×4 MTSantenna array with the PRGW feed network is developed. Simulated results show that the FBR canbe highly improved by over 16 dB within the entire bandwidth. To validate the design, a prototypeof the proposed antenna is fabricated. Measured results show that an FBR greater than 28 dB canbe obtained over a 24% impedance bandwidth (from 24.9 GHz to 31.7 GHz) with the reflectioncoefficient less than 10 dB. The measured antenna gain ranges from 17 dBi to 19.2 dBi and thecorresponding measured aperture efficiencies are 35% and 45.6%. The measured results alsosuggest that the proposed MTS antenna possesses -35 dB cross-polarization level and stable radiation patterns. In addition, the proposed antenna remains a very low profile of 1.7 mm (0.17λ_(0) at28 GHz). All the achieved features indicate that the proposed MTS antenna is an importantcandidate for B5G and 6G wireless communication.

X波段Si基片集成脊波导MEMS环行器

基于波导传输理论设计并制备了一款Si基片集成脊波导(RSIW)微电子机械系统(MEMS)环行器,该环形器以高阻硅作为衬底材料,采用高精度三维MEMS加工工艺制备而成。通过在基片集成波导(SIW)结构中添加脊梁结构,形成RSIW传输结构,使传输主模TE10模的截止频率比矩形波导TE10模的低,从而实现相同频率下更小的器件尺寸。同时,通过电磁仿真软件对射频匹配和磁场分布进行了精确的建模仿真,完成了Si基片集成脊波导MEMS环行器的仿真设计。制备了尺寸为6 mm×6 mm的环行器样品并进行了测试,结果验证了仿真设计的准确性,其工作频率为8~12 GHz,回波损耗大于20 dB,隔离度大于18 dB,插入损耗小于0.5 dB。实现优良微波特性的同时,相比于常规的SIW结构环行器尺寸缩小了20%左右。

高增益低旁瓣宽扇形波束脊形波导缝隙天线阵列设计

提出了一种具有高增益低副瓣的脊形波导缝隙阵列天线,中心工作频率为24.125 GHz,其包括一个八路馈电网络和一个尺寸为400 mm×65 mm的8×40辐射缝隙。通过波束合成方法提取天线阵列的期望激励分布,采用截止模式功率分配器灵活控制功率比。使用三维电磁仿真软件HFSS综合仿真计算,在中心频率处,获得仰角平面上的旁瓣电平(sidelobe level,SLL)和半功率波束宽度(half power beam width,HPBW)分别为-20.9 dB和54.5°、方位角平面上的SLL和HPBW分别为-27.8 dB和2.5°、峰值增益为23.2 dBi,仿真结果与理论分析一致。此天线可以同时实现低旁瓣的宽扇形波束,覆盖较宽的检测范围,并减轻来自其他方向的干扰,具有应用于空中探测、反无人机、气象雷达和成像雷达的潜力。

一种基于脊间隙波导的宽频带馈电线源设计

设计了以脊间隙波导(RGW)功分网络为基本结构的宽频带馈电线源,该线源可用以激励平行板波导中的准TEM模式波,并用作宽带连续横向枝节(CTS)天线的馈电结构。首先对RGW阻带和单模带宽特性进行分析,以确定RGW的结构参数;进一步研究了宽带1分2功分器的设计方法、RGW模式到平行板波导模式的过渡结构方案;借助多级阻抗匹配和感性金属柱加载技术,实现了低反射等功率分配,以及输出端口到平行板波导的宽带匹配;最后将各分级结构级联得到1分8 RGW网络线源。对宽频带馈电线源进行了样机加工、装配和测试,在12 GHz~22 GHz频率范围内,其反射系数低于-15 dB,实测方向图与等幅同相均匀线源方向图吻合度很高,证明该馈电线源幅相一致性优异,是一种高效率的CTS天线馈电线源。

基于脊间隙波导的低副瓣多波束阵列天线设计

为了克服毫米波频段传统多波束阵列天线损耗高、效率低以及等幅激励情况下副瓣电平较高的问题,该文提出了一种基于间隙波导技术的低副瓣多波束阵列天线设计方法。首先,设计了基于巴特勒矩阵的双层多波束馈电网络拓扑结构,将传统巴特勒矩阵的4个输出端口与不等功分器相连,拓展为8个输出端口,实现输出功率的重新分配,以达到低副瓣设计的目的。接着,设计了基于脊间隙波导的双层和单层定向耦合器、交叉结和不等功分器,完成了低副瓣多波束阵列天线的整体设计。最后,进行了天线实物加工和测试,测试与仿真结果较为吻合,副瓣电平得到了有效降低,验证了所提出的低副瓣多波束阵列天线的性能。

基于微带双脊间隙波导技术的Ka波段六端口网络电路

面向毫米波高精度雷达探测应用,文中提出了一种基于微带双脊间隙波导技术的六端口网络电路。设计了基于微带双脊间隙波导的功分器和耦合器电路,提出了微带双脊间隙波导至微带线的新型过渡转换结构,并基于简化的六端口网络原理框图,将所设计的功分器、耦合器以及过渡转换结构进行有机组合,实现了所设计的Ka波段六端口网络电路。实验测试结果表明:在所设计的37.5 GHz~42.5 GHz频率范围内,输入端口1与四个输出端口间的相位差均在±2.5°以内,输入端口2与四个输出端口间的相位差均在±5°内,工作中心频率处的输入输出间插入损耗约为7.3 dB。实验与仿真结果吻合较好。

LiNbO_(3) channel and ridge waveguides based on helium ion implantation combined with lithography and precise diamond dicing

Lithium niobate(LiNbO_(3),LN)channel and ridge waveguides have been successfully fabricated by He ion implantation,which has energy of 500 keV and fluence of 1.5×10^(16)ions/cm^(2) and is combined with lithography and the precise diamond dicing technique.The refractive index profile of the annealed LN planar waveguide was reconstructed.The propagation loss of the channel waveguide with a width of 10μm and that of the ridge waveguides with widths of 25μm and 15μm were investigated by the end-face coupling method.In our work,the factors that affect the waveguide properties of channel and ridge waveguides were revealed.

Locally periodically poled LNOI ridge waveguide for second harmonic generation [Invited]

Periodically poled lithium niobate on insulator(LNOI) ridge waveguides are desirable for high-efficiency nonlinear frequency conversions, and the fabrication process of such waveguides is crucial for device performance. In this work, we report fabrication and characterization of locally periodically poled ridge waveguides. Ridge waveguides were fabricated by dry etching, and then the high-voltage pulses were applied to locally poled ridge waveguides. Second harmonic generation with normalized conversion efficiency of 435.5% W^(-1)·cm^(-2) was obtained in the periodically poled LNOI ridge waveguide,which was consistent with the triangular domain structure revealed by confocal microscopy.

High performance highly strained InGaAs quantum-well ridge waveguide lasers

Highly strained InGaAs ridge waveguide lasers were fabricated with pulsed anodic oxidation. The laser structure was grown by molecular beam epitaxy (MBE) system. The output powers up to 50 mW per facet in CW mode were reached at room temperature for the 4 μm stripe lasers. The threshold current density of 300 A/cm2 was achieved with 600 μm cavity length. The emission wavelength at 100 mA was 1.19 μm. The slope efficiency was 0.45 W/A in linear output region of light-current characteristics. The laser characteristic temperature was 129 K (20℃―100℃).

Optimization design for polymeric S-shaped ridge waveguide

The dispersion characteristics and transverse field distribution of the fundamental and higher order modes are analyzed for polymeric ridge multimode waveguide by a new technique which is based on the combination of the effective index method and the variational method. An algorithm is implemented to study the effect of the structure parameters and dimensions on the dispersion curves. The optical field distribution of the fundamental and higher order modes for TM modes are computed. The single mode conditions of polymeric ridge waveguide are obtained. The relationship between the curvature radius and the bending loss of S-shaped ridge waveguide are studied with wide-angle finite-difference beam propagation method and effective index method. The conclusion is: when the curvature radius is larger than 5000 μm, the bending loss will not decrease distinctly even if the curvature radius increases, and the light can propagate stably in the S-shaped ridge waveguide.

LiNbO_3 Self-Aligned Ridge Waveguide with Dielectric Side Buffers

A simple fabrication method of self-aligned ridge waveguides with dielectric side buffers is demonstrated on +Z-cut LiNbO3. The ridge waveguide is fabricated by a combination of the annealed proton exchange process and the proton-exchanged wet etching technique.

InGaAsP/InP DH Ridge Waveguide Phase Modulator with High Modulation Efficiency

The P-p-n-N InGaAsP/InP ridge waveguide phase modulator has been fabricated and investigated at a wavelength of 1550nm. The phase modulation efficiency measured by the Fabry-Perot resonance method is as high as 34°/V·mm for TE mode. The QEO effect becomes dominant from - 4V to - 8V.

Modeling of double ridge waveguide using ANN

The ridge waveguide is useful in various microwave applications because it can be operated at a lower frequency and has lower impedance and a wider mode separation than a simple rectangular waveguide. An accurate model is essential for the analysis and design of ridge waveguide that can be obtained using electromag- netic simulations. However, the electromagnetic simula- tion is expensive for its high computational cost. Therefore, artificial neural networks （ANNs） become very useful especially when several model evaluations are required during design and optimization. Recently, ANNs have been used for solving a wide variety of radio frequency （RF） and microwave computer-aided design （CAD） problems. Analysis and design of a double ridge waveguide has been presented in this paper using ANN forward and inverse models. For the analysis, a simple ANN forward model is used where the inputs are geometrical parameters and the outputs are electrical parameters. For the design of RF and microwave components, an inverse model is used where the inputs are electrical parameters and the outputs are geometrical parameters. This paper also presents a comparison of the direct inverse model and the proposed inverse model.

基于AZ5214光致保护层的As2S3硫系脊型波导制备

实验研究发现AZ5214光刻胶在一定曝光剂量下显影后会留存一定厚度的底膜,该底膜可以在干法刻蚀过程中避免As-S薄膜与碱性显影液直接接触,减轻薄膜表面损伤,起到保护作用。基于此,采用该底膜作为保护层制备As2S3脊型波导,研究结果表明,在AZ5214光刻胶匀胶厚度为2.1μm、紫外曝光剂量为200 mJ/cm2、显影时间为45 s的条件下会留存约为220 nm厚的光致保护层,该条件下保护层均匀性较好,且在刻蚀阶段可以完全去除。实验表明利用此保护层制备的As2S3脊型波导具有良好的形貌特征,波导脊宽约为3μm、脊高约为800 nm的As2S3脊型波导的传输损耗约为0.74 dB/cm@1 550 nm。