Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistan...Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN.Due to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.展开更多
p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of ...p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.展开更多
本文借鉴复合型电商平台的运营现实,以FBP(fulfilled by POP),即商家进驻电商平台后将产品运入平台仓库,商家负责产品销售,平台负责发货和售后,及SOP(sale on POP),即电商平台只提供一个销售平台,商家自主运营、发货、售后两种进驻模式...本文借鉴复合型电商平台的运营现实,以FBP(fulfilled by POP),即商家进驻电商平台后将产品运入平台仓库,商家负责产品销售,平台负责发货和售后,及SOP(sale on POP),即电商平台只提供一个销售平台,商家自主运营、发货、售后两种进驻模式商家和平台的竞合为参考,分别构建了平台自营或FBP模式、自营+FBP模式、自营+FBP+SOP模式下的在线渠道竞争模型。通过构建价格和服务同时影响消费者选择的效用函数,综合采用博弈论和最优化方法来确定不同模式下的参与者定价和服务决策,并借助算例分析进行深入研究。结果表明;无论何种模式,自己提供服务的商家和平台最优收益的实现都会受众多条件的影响,将服务交由平台提供的商家反而总能实现最优;进驻模式中参与者数量的增加会降低在线渠道的服务水平,但对于提高总的市场需求具有正向作用。此外,尽管自营或FBP模式能够为平台或FBP商家带来更大收益,但当消费者对FBP商家产品偏好较小,自营+FBP模式能够为在线渠道带来较自营模式更多的整体收益。展开更多
基金supported by the National Natural Science Foundation of China(62104185)the National Science Fund for Distinguished Young Scholars(61925404)+2 种基金the Fundamental Research Funds for the Central Universitiesthe Innovation Fund of Xidian Universitythe Wuhu and Xidian University Special Fund for Industry-University-Research Cooperation(XWYCXY-012021010)。
文摘Pre-ohmic-annealing(POA)treatment of P-GaN/AlN/AlGaN epitaxy under N_(2)atmosphere was demonstrated to effectively achieve good p-type ohmic contact as well as decreased epitaxy sheet resistance.Ohmic contact resistance(Rc)extracted by transfer length method reduced from 38 to 23Ω·mm with alleviated contact barrier height from 0.55 to 0.51 eV after POA treatment.X-ray photoelectron spectroscopy and Hall measurement confirmed that POA treatment was able to reduce surface state density and improve the hole concentration of p-GaN.Due to the decreased Rc and improved two-dimensional hole gas(2DHG)density,an outstanding-performance GaN E-mode p-channel MOSFET was successfully realized.
基金supported by the National Natural Science Foundation of China(62003151,61925404,62074122,and 61904139)the Key Research and Development Program in Shaanxi Province(2016KTZDGY-03-01)。
文摘p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode(E-mode)AlGaN/GaN high electron mobility transistor(HEMT);however,the difficult activation of Mg doping and etching damage of p-GaN limit the further improvement of device performance.Thus,the more cost-effective cap layer has attracted wide attention in GaN-based HEMT.In this paper,p-type tin monoxide(p-SnO)was firstly investigated as a gate cap to realize E-mode AlGaN/GaN HEMT by both Silvaco simulation and experiment.Simulation results show that by simply adjusting the thickness(50 to 200 nm)or the doping concentration(3×10^(17)to 3×10^(18)cm^(-3))of p-SnO,the threshold voltage(V_(th))of HEMT can be continuously adjusted in the range from zero to 10 V.Simultaneously,the device demonstrated a drain current density above 120 mA mm^(-1),a gate breakdown voltage(V_(BG))of 7.5 V and a device breakdown voltage(V_(B))of 2470 V.What is more,the etching-free AlGaN/GaN HEMT with sputtered p-SnO gate cap were fabricated,and achieved a positive V_(th) of 1 V,V_(BG) of 4.2 V and V_(B) of 420 V,which confirms the application potential of the p-SnO film as a gate cap layer for E-mode GaN-based HEMT.This work is instructive to the design and manufacture of p-oxide gate cap E-mode AlGaN/GaN HEMT with low cost.
文摘本文借鉴复合型电商平台的运营现实,以FBP(fulfilled by POP),即商家进驻电商平台后将产品运入平台仓库,商家负责产品销售,平台负责发货和售后,及SOP(sale on POP),即电商平台只提供一个销售平台,商家自主运营、发货、售后两种进驻模式商家和平台的竞合为参考,分别构建了平台自营或FBP模式、自营+FBP模式、自营+FBP+SOP模式下的在线渠道竞争模型。通过构建价格和服务同时影响消费者选择的效用函数,综合采用博弈论和最优化方法来确定不同模式下的参与者定价和服务决策,并借助算例分析进行深入研究。结果表明;无论何种模式,自己提供服务的商家和平台最优收益的实现都会受众多条件的影响,将服务交由平台提供的商家反而总能实现最优;进驻模式中参与者数量的增加会降低在线渠道的服务水平,但对于提高总的市场需求具有正向作用。此外,尽管自营或FBP模式能够为平台或FBP商家带来更大收益,但当消费者对FBP商家产品偏好较小,自营+FBP模式能够为在线渠道带来较自营模式更多的整体收益。
