本文在低温下利用ECR CVD技术沉积SiO2薄膜,讨论了沉积速率和薄膜折射率随工艺条件变化的关系。直径6英寸片内均匀性达到96%,重复性达到97%。对薄膜进行了FTIR光谱分析,1050cm-1处出现Si O Si伸缩振动吸收峰;仪器检测精度内,并未出现明...本文在低温下利用ECR CVD技术沉积SiO2薄膜,讨论了沉积速率和薄膜折射率随工艺条件变化的关系。直径6英寸片内均匀性达到96%,重复性达到97%。对薄膜进行了FTIR光谱分析,1050cm-1处出现Si O Si伸缩振动吸收峰;仪器检测精度内,并未出现明显的Si H和N H吸收峰,表明薄膜具有很低的H含量。展开更多
Nitrogen doped diamond-like carbon （DLC：N） films were prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectr...Nitrogen doped diamond-like carbon （DLC：N） films were prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy （AES） was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy （XPS） analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young＇s modulus from 193.03 GPa down to 144.52 GPa.展开更多
文摘Nitrogen doped diamond-like carbon （DLC：N） films were prepared by electron cyclotron resonance chemical vapor deposition （ECR-CVD） on polycrystalline Si chips. Film thickness is about 50 nm. Auger electron spectroscopy （AES） was used to evaluate nitrogen content, and increasing N2 flow improved N content from 0 to 7.6%. Raman and X-ray photoelectron spectroscopy （XPS） analysis results reveal CN-sp^3C and N-sp^2C structure. With increasing the N2 flow, sp^3C decreases from 73.74% down to 42.66%, and so does N-sp^3C from 68.04% down to 20.23%. The hardness decreases from 29.18 GPa down to 19.74 GPa, and the Young＇s modulus from 193.03 GPa down to 144.52 GPa.
