A modified analytic embedded-atom model(MAEAM) was applied to investigate surface premelting and melting behaviors of Nb(111) plane by molecular dynamics(MD) simulations. First the relaxation of surface interface spac...A modified analytic embedded-atom model(MAEAM) was applied to investigate surface premelting and melting behaviors of Nb(111) plane by molecular dynamics(MD) simulations. First the relaxation of surface interface space at 300 K was studied. Then a number N of the disordered atoms per unit area was determined at the given temperatures to investigate the surface premelting and melting evolution. The obtained results indicated that the premelting phenomena occurred at about 1 100 K and a liquid-like layer emerged on (111) plane simultaneously. As temperature increased up to 2 200 K, the number N grew logarithmically for short-range metallic interactions. Upon 2 350 K surface melting generated originally and the number N increased exponentially with the incremental temperature.展开更多
通过微波等离子体化学气相淀积技术生长单晶金刚石并切割得到(110)和(111)晶面金刚石片,以同批器件工艺制备两种晶面上栅长为6μm的氢终端单晶金刚石场效应管,从材料和器件特性两方面对两种晶面金刚石进行对比分析.(110)面和(111)面金...通过微波等离子体化学气相淀积技术生长单晶金刚石并切割得到(110)和(111)晶面金刚石片,以同批器件工艺制备两种晶面上栅长为6μm的氢终端单晶金刚石场效应管,从材料和器件特性两方面对两种晶面金刚石进行对比分析.(110)面和(111)面金刚石的表面形貌在氢终端处理后显著不同,光学性质则彼此相似.VGS=–4 V时,(111)金刚石器件获得的最大饱和电流为80.41 m A/mm,约为(110)金刚石器件的1.4倍;其导通电阻为48.51 W·mm,只有(110)金刚石器件导通电阻的67%.通过对器件电容-电压特性曲线的分析得到,(111)金刚石器件沟道中最大载流子密度与(110)金刚石器件差异不大.分析认为,(111)金刚石器件获得更高饱和电流和更低导通电阻,应归因于较低的方阻.展开更多
基金Project(07C445) supported by the Scientific Research Fund of Hunan Provincial Education Department, ChinaProject supported by the Grant of the 11th Fiver-year Plan for Key Construction Academic Subject of Hunan Province, ChinaProject(JJZD0703) supported by the Key Scientific Research Project of Hunan University of Arts and Science, China
文摘A modified analytic embedded-atom model(MAEAM) was applied to investigate surface premelting and melting behaviors of Nb(111) plane by molecular dynamics(MD) simulations. First the relaxation of surface interface space at 300 K was studied. Then a number N of the disordered atoms per unit area was determined at the given temperatures to investigate the surface premelting and melting evolution. The obtained results indicated that the premelting phenomena occurred at about 1 100 K and a liquid-like layer emerged on (111) plane simultaneously. As temperature increased up to 2 200 K, the number N grew logarithmically for short-range metallic interactions. Upon 2 350 K surface melting generated originally and the number N increased exponentially with the incremental temperature.
文摘通过微波等离子体化学气相淀积技术生长单晶金刚石并切割得到(110)和(111)晶面金刚石片,以同批器件工艺制备两种晶面上栅长为6μm的氢终端单晶金刚石场效应管,从材料和器件特性两方面对两种晶面金刚石进行对比分析.(110)面和(111)面金刚石的表面形貌在氢终端处理后显著不同,光学性质则彼此相似.VGS=–4 V时,(111)金刚石器件获得的最大饱和电流为80.41 m A/mm,约为(110)金刚石器件的1.4倍;其导通电阻为48.51 W·mm,只有(110)金刚石器件导通电阻的67%.通过对器件电容-电压特性曲线的分析得到,(111)金刚石器件沟道中最大载流子密度与(110)金刚石器件差异不大.分析认为,(111)金刚石器件获得更高饱和电流和更低导通电阻,应归因于较低的方阻.
