The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and...The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.展开更多
In this paper, the magnetocaloric in La0.5Sm0.2Sr0.3Mn1-xFexO3 compounds with x = 0 (LSSMO) and x = 0.05 (LSSMFO) were simulated using mean field model theory. A strong consistency was observed between the theoretical...In this paper, the magnetocaloric in La0.5Sm0.2Sr0.3Mn1-xFexO3 compounds with x = 0 (LSSMO) and x = 0.05 (LSSMFO) were simulated using mean field model theory. A strong consistency was observed between the theoretical and experimental curves of magnetizations and magnetic entropy changes, −ΔSM(T). Based on the mean-field generated −ΔSM(T), the substantial Temperature-averaged Entropy Change (TEC) values reinforce the appropriateness of these materials for use in magnetic refrigeration technology within TEC (10) values of 1 and 0.57 J∙kg−1∙K−1under 1 T applied magnetic field.展开更多
A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on th...A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on the insulator and a P-type barrier layer(PBL),together with a P-shield layer under the trench gate.At forward conduction,the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source,without influencing the on-state characteristic of the CD-FET.At reverse conduction,the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage(V_(F)),preventing the inherent body diode from turning on.Meanwhile,the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage(BV).Moreover,the P-shield not only shields the gate from a high electric field but also transforms part of C_(GD)to CGS so as to significantly reduce the gate charge(Q_(GD)),leading to a low switching loss(E_(switch)).Consequently,the proposed CD-FET achieves a low V_(F)of 1.65 V and a high BV of 1446 V,and V_(F),Q_(GD)and E_(switch)of the CD-FET are decreased by 49%,55%and 80%,respectively,compared with those of a conventional metal-oxide-semiconductor field-effect transistor(MOSFET).展开更多
A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in w...A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.展开更多
Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transi...Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.展开更多
The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characte...The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.展开更多
Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the in...Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.展开更多
The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the Aha...The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation (ABO) are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.展开更多
Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can...Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Duet al. for the H in the electric field near a metal surface (J. Phys. B 43 035002 (2010)), some additional closed orbits are produced due to the effect of magnetic field. For a given ion surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.展开更多
We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT p...We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.展开更多
In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and ...In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and characterized by photoluminescence spectra(PL),x-ray diffraction(XRD),and x-ray photoelectron spectroscopy(XPS).With PCBM layers,the current–voltage hysteresis phenomenon is effetely inhibited,and both the transfer and output current values increase.The band energy diagrams are proposed,which indicate that the electrons are transferred into the PCBM layer,resulting in the increase of photocurrent.The electron mobility and hole mobility are extracted from the transfer curves,which are about one order of magnitude as large as those of PCBM deposited,which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites,and the effects of ionized impurity scattering on carrier transport become smaller.展开更多
The photo-dissociation dynamics of LiF is investigated with newly constructed accurate ab initio potential energy curves (PECs) using the time-dependent quantum wave packet method. The oscillations and decay of the ...The photo-dissociation dynamics of LiF is investigated with newly constructed accurate ab initio potential energy curves (PECs) using the time-dependent quantum wave packet method. The oscillations and decay of the wave packet on the adiabats as a function of time are given, which can be compared with the femtosecond transition-state (FTS) spectroscopy. The photo-absorption spectra and the kinetic-energy distribution of the dissociation fragments, which can exhibit the vibration-level structure and the dispersion of the wave packet, respectively, are also obtained. The investigation shows a blue shift of the band center for the photo-absorption spectrum and multiple peaks in the kinetic-energy spectrum with increasing laser intensity, which can be attributed to external field effects. By analyzing the oscillations of the wave packet evolving on the upper adiabat, an approximate inversion scheme is devised to roughly deduce its shape.展开更多
The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is t...The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.展开更多
A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferr...A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102.展开更多
We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then ...We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.展开更多
Rice leaffolder,Cnaphalocrocis medinalis(Guenée),has become a major pest throughout the rice cultivating areas of China and caused severe damage to rice production.Cnaphalocrocis medinalis granulovirus(CnmeGV),a ...Rice leaffolder,Cnaphalocrocis medinalis(Guenée),has become a major pest throughout the rice cultivating areas of China and caused severe damage to rice production.Cnaphalocrocis medinalis granulovirus(CnmeGV),a naturally occurring baculovirus,is revealed as a potential microbial agent for the pest control.Field applications of CnmeGV were conducted against rice leaffolder larvae in rice paddies.CnmeGV infected the larvae not only in the current generation but also in the successive generation,resulting in a sustained infection in the larva population for at least 48 days.Under diferent concentrations of CnmeGV(7.5×1011 and 1.125×1012 occlusion body(OB)ha-1)at 30 days after spraying,larval population reduced up to 76.32%and rice leaf rolled rate kept in 15.42%.Simultaneously,CnmeGV had no impact on arthropod predators of C.medinalis,with abundances ranging from 2.39 to 3.79 per ten hills.These results revealed that CnmeGV is suitable as a bio-pesticide for rice leaffolder management in rice paddies.展开更多
Recently, Shiet al. [2008 Phys. Left. A 372 5922] have studied the dynamical response of the kinetic Ising model in the presence of a sinusoidal oscillating field and presented the dynamic phase diagrams by using an e...Recently, Shiet al. [2008 Phys. Left. A 372 5922] have studied the dynamical response of the kinetic Ising model in the presence of a sinusoidal oscillating field and presented the dynamic phase diagrams by using an effective-field theory (EFT) and a mean-field theory (MFT). The MFT results are in conflict with those of the earlier work of Tome and de Oliveira, [1990 Phys. Rev. A 41 4251]. We calculate the dynamic phase diagrams and find that our results are similar to those of the earlier work of Tome and de Oliveira; hence the dynamic phase diagrams calculated by Shiet al. are incomplete within both theories, except the low values of frequencies for the MFT calculation. We also investigate the influence of external field frequency (w) and static external field amplitude (h0) for both MFT and EFT calculations. We find that the behaviour of the system strongly depends on the values of w and h0.展开更多
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is o...The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.展开更多
We have investigated the anisotropic magnetocaloric effect and the rotating field magnetic entropy in Dy FeO3 single crystal. A giant rotating field entropy change of -ΔSM^R = 16.62 J/kg·K was achieved from b ax...We have investigated the anisotropic magnetocaloric effect and the rotating field magnetic entropy in Dy FeO3 single crystal. A giant rotating field entropy change of -ΔSM^R = 16.62 J/kg·K was achieved from b axis to c axis in bc plane at 5 K for a low field change of 20 k Oe. The large anisotropic magnetic entropy change is mainly accounted for the 4 f electron of rare-earth Dy^3+ ion. The large value of rotating field entropy change, together with large refrigeration capacity and negligible hysteresis, suggests that the multiferroic ferrite Dy FeO3 singlecrystal could be a potential material for anisotropic magnetic refrigeration at low field, which can be realized in the practical application around liquid helium temperature region.展开更多
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and ...Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.展开更多
基金the National Natural Science Foundation of China(U21A20497)Singapore National Research Foundation Investigatorship(Grant No.NRF-NRFI08-2022-0009)。
文摘The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.
文摘In this paper, the magnetocaloric in La0.5Sm0.2Sr0.3Mn1-xFexO3 compounds with x = 0 (LSSMO) and x = 0.05 (LSSMFO) were simulated using mean field model theory. A strong consistency was observed between the theoretical and experimental curves of magnetizations and magnetic entropy changes, −ΔSM(T). Based on the mean-field generated −ΔSM(T), the substantial Temperature-averaged Entropy Change (TEC) values reinforce the appropriateness of these materials for use in magnetic refrigeration technology within TEC (10) values of 1 and 0.57 J∙kg−1∙K−1under 1 T applied magnetic field.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61874149 and U20A20208)the Outstanding Youth Science and Technology Foundation of China(Grant No.2018-JCJQ-ZQ-060).
文摘A vertical GaN field-effect transistor with an integrated self-adapted channel diode(CD-FET)is proposed to improve the reverse conduction performance.It features a channel diode(CD)formed between a trench source on the insulator and a P-type barrier layer(PBL),together with a P-shield layer under the trench gate.At forward conduction,the CD is pinched off due to depletion effects caused by both the PBL and the metal-insulator-semiconductor structure from the trench source,without influencing the on-state characteristic of the CD-FET.At reverse conduction,the depletion region narrows and thus the CD turns on to achieve a very low turn-on voltage(V_(F)),preventing the inherent body diode from turning on.Meanwhile,the PBL and P-shield layer can modulate the electric field distribution to improve the off-state breakdown voltage(BV).Moreover,the P-shield not only shields the gate from a high electric field but also transforms part of C_(GD)to CGS so as to significantly reduce the gate charge(Q_(GD)),leading to a low switching loss(E_(switch)).Consequently,the proposed CD-FET achieves a low V_(F)of 1.65 V and a high BV of 1446 V,and V_(F),Q_(GD)and E_(switch)of the CD-FET are decreased by 49%,55%and 80%,respectively,compared with those of a conventional metal-oxide-semiconductor field-effect transistor(MOSFET).
文摘A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332)the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028)。
文摘Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.
文摘The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61627813,62204018,and 61571023)the Beijing Municipal Science and Technology Project(Grant No.Z201100004220002)+2 种基金the National Key Technology Program of China(Grant No.2017ZX01032101)the Program of Introducing Talents of Discipline to Universities in China(Grant No.B16001)the VR Innovation Platform from Qingdao Science and Technology Commission.
文摘Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.
基金Project supported by the National Natural Science Foundation of China (Grant No 10574163), the Center of Theoretical Nuclear Physics, National Laboratory of Heavy Ion Collisions, Lanzhou, China.
文摘The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation (ABO) are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 11074104 and 10604045)the University Science and Technology Planning Program of Shandong Province of China (Grant No. J09LA02)
文摘Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Duet al. for the H in the electric field near a metal surface (J. Phys. B 43 035002 (2010)), some additional closed orbits are produced due to the effect of magnetic field. For a given ion surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.
文摘We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.
基金Project supported by the National Natural Science Foundation of China(Grant No.51602241)the China Postdoctoral Science Foundation(Grant No.2016M592754)
文摘In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and characterized by photoluminescence spectra(PL),x-ray diffraction(XRD),and x-ray photoelectron spectroscopy(XPS).With PCBM layers,the current–voltage hysteresis phenomenon is effetely inhibited,and both the transfer and output current values increase.The band energy diagrams are proposed,which indicate that the electrons are transferred into the PCBM layer,resulting in the increase of photocurrent.The electron mobility and hole mobility are extracted from the transfer curves,which are about one order of magnitude as large as those of PCBM deposited,which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites,and the effects of ionized impurity scattering on carrier transport become smaller.
基金the International Cooperation Program for Excellent Lectures of 2008 by Shandong Provincial Education Department,Chinathe National Natural Science Foundation of China(Grant No.11074151)Fundao para a Ciência e a Tecnologia,Portugal
文摘The photo-dissociation dynamics of LiF is investigated with newly constructed accurate ab initio potential energy curves (PECs) using the time-dependent quantum wave packet method. The oscillations and decay of the wave packet on the adiabats as a function of time are given, which can be compared with the femtosecond transition-state (FTS) spectroscopy. The photo-absorption spectra and the kinetic-energy distribution of the dissociation fragments, which can exhibit the vibration-level structure and the dispersion of the wave packet, respectively, are also obtained. The investigation shows a blue shift of the band center for the photo-absorption spectrum and multiple peaks in the kinetic-energy spectrum with increasing laser intensity, which can be attributed to external field effects. By analyzing the oscillations of the wave packet evolving on the upper adiabat, an approximate inversion scheme is devised to roughly deduce its shape.
文摘The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.
基金supported by Center for BioNano Health-Guardfunded by the Ministry of Science, ICT & Future Planning (MSIP) of Korea as a Global Frontier Project (HGUARD_2013M3A6B2)
文摘A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102.
文摘We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.
基金supported by the National Natural Science Foundation of China (31071740 and 31701792)the Jiangsu Science Foundation of China (BK20181283)the Jiangsu Agricultural Science and Technology Innovation Fund, China (ZX(17)2002)
文摘Rice leaffolder,Cnaphalocrocis medinalis(Guenée),has become a major pest throughout the rice cultivating areas of China and caused severe damage to rice production.Cnaphalocrocis medinalis granulovirus(CnmeGV),a naturally occurring baculovirus,is revealed as a potential microbial agent for the pest control.Field applications of CnmeGV were conducted against rice leaffolder larvae in rice paddies.CnmeGV infected the larvae not only in the current generation but also in the successive generation,resulting in a sustained infection in the larva population for at least 48 days.Under diferent concentrations of CnmeGV(7.5×1011 and 1.125×1012 occlusion body(OB)ha-1)at 30 days after spraying,larval population reduced up to 76.32%and rice leaf rolled rate kept in 15.42%.Simultaneously,CnmeGV had no impact on arthropod predators of C.medinalis,with abundances ranging from 2.39 to 3.79 per ten hills.These results revealed that CnmeGV is suitable as a bio-pesticide for rice leaffolder management in rice paddies.
基金Project supported by the Scientific and Technological Research Council of Turkey (TBTAK) (Grant No. 107T533)the Erciyes University Research Funds (Grant Nos. FBA-06-01 and FBD-08-593)
文摘Recently, Shiet al. [2008 Phys. Left. A 372 5922] have studied the dynamical response of the kinetic Ising model in the presence of a sinusoidal oscillating field and presented the dynamic phase diagrams by using an effective-field theory (EFT) and a mean-field theory (MFT). The MFT results are in conflict with those of the earlier work of Tome and de Oliveira, [1990 Phys. Rev. A 41 4251]. We calculate the dynamic phase diagrams and find that our results are similar to those of the earlier work of Tome and de Oliveira; hence the dynamic phase diagrams calculated by Shiet al. are incomplete within both theories, except the low values of frequencies for the MFT calculation. We also investigate the influence of external field frequency (w) and static external field amplitude (h0) for both MFT and EFT calculations. We find that the behaviour of the system strongly depends on the values of w and h0.
基金Supported by the National Basic Research Program of China under Grant Nos 2013CB921900 and 2014CB920900the National Natural Science Foundation of China under Grant No 11374021)(S.Yan,Z.Xie,J.-H,Chen)+1 种基金support from the Elemental Strategy Initiative conducted by the MEXT,Japana Grant-in-Aid for Scientific Research on Innovative Areas"Science of Atomic Layers"from JSPS
文摘The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.
基金supported by the National Basic Research Program of China(Grant Nos.2010CB934202,2011CB921801,and 2012CB933102)the National Natural Science Foundation of China(Grant Nos.11174351,11274360,and 11034004)
文摘We have investigated the anisotropic magnetocaloric effect and the rotating field magnetic entropy in Dy FeO3 single crystal. A giant rotating field entropy change of -ΔSM^R = 16.62 J/kg·K was achieved from b axis to c axis in bc plane at 5 K for a low field change of 20 k Oe. The large anisotropic magnetic entropy change is mainly accounted for the 4 f electron of rare-earth Dy^3+ ion. The large value of rotating field entropy change, together with large refrigeration capacity and negligible hysteresis, suggests that the multiferroic ferrite Dy FeO3 singlecrystal could be a potential material for anisotropic magnetic refrigeration at low field, which can be realized in the practical application around liquid helium temperature region.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.