Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.

Study of the Magnetocaloric Effect in La0.5Sm0.2Sr0.3Mn1-xFexO3 (x = 0 and 0.05) Manganites with the Mean-Field Theory

In this paper, the magnetocaloric in La0.5Sm0.2Sr0.3Mn1-xFexO3 compounds with x = 0 (LSSMO) and x = 0.05 (LSSMFO) were simulated using mean field model theory. A strong consistency was observed between the theoretical and experimental curves of magnetizations and magnetic entropy changes, −ΔSM(T). Based on the mean-field generated −ΔSM(T), the substantial Temperature-averaged Entropy Change (TEC) values reinforce the appropriateness of these materials for use in magnetic refrigeration technology within TEC (10) values of 1 and 0.57 J∙kg−1∙K−1under 1 T applied magnetic field.

High Performance of Enhanced Mode Field Effect Transistor and Ultraviolet Sensor Based on ZnO Nanosheet

ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor （FET） and ultraviolet （UV） sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off cur- rent ratio can reach 256 cm2/（V.s） and ~10^8, respectively. Moreover, the response of UV sensors can also be remarkably improved to ~3 × 10^8. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices.

Effect of electric field on the electronic spectrum and the persistent current of a quantum ring with two electrons

The effect of an electric field E on a narrow quantum ring that contains two electrons and is threaded by a magnetic flux B has been investigated. Localization of the electronic distribution and suppression of the AharonovBohm oscillation （ABO） are found in the two-electron ring, which are similar to those found in a one-electron ring. However, the period of ABO in a two-electron ring is reduced by half compared with that in a one-electron ring. Furthermore, during the variation of B, the persistent current of the ground state may undergo a sudden change in sign. This change is associated with a singlet-triplet transition and has no counterpart in one-electron rings. For a given E, there exists a threshold of energy. When the energy of the excited state exceeds the threshold, the localization would disappear and the ABO would recover. The value of the threshold is proportional to the magnitude of E. Once the threshold is exceeded, the persistent current is much stronger than the current of the ground state at E=0.

Magnetic field effect in photodetachment from negative ion in electric field near metal surface

Based on the closed-orbit theory, the magnetic field effect in the photodetachment of negative ion in the electric field near a metal surface is studied for the first time. The results show that the magnetic field can produce a significant effect on the photodetachment of negative ion near a metal surface. Besides the closed orbits previously found by Duet al. for the H in the electric field near a metal surface （J. Phys. B 43 035002 （2010））, some additional closed orbits are produced due to the effect of magnetic field. For a given ion surface distance and an electric field strength, the cross section depends sensitively on the magnetic field strength. As the magnetic field strength is very small, its influence can be neglected. With the increase of the magnetic field strength, the number of the closed orbits increases greatly and the oscillation in the cross section becomes much more complex. Therefore we can control the photodetachment cross section of the negative ion by changing the magnetic field strength. We hope that our results may guide future experimental studies for the photodetachment process of negative ion in the presence of external fields and surfaces.

Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material

As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.

Study on the Carbon Nanotube Separative Structure for the Extended Gate H^+-Ion Sensitive Field Effect Transistor

We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.

Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors

In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors（MOSFETs） with phenylC61-butyric acid methylester（PCBM） layers are studied.The MOSFETs are fabricated on perovskites,and characterized by photoluminescence spectra（PL）,x-ray diffraction（XRD）,and x-ray photoelectron spectroscopy（XPS）.With PCBM layers,the current–voltage hysteresis phenomenon is effetely inhibited,and both the transfer and output current values increase.The band energy diagrams are proposed,which indicate that the electrons are transferred into the PCBM layer,resulting in the increase of photocurrent.The electron mobility and hole mobility are extracted from the transfer curves,which are about one order of magnitude as large as those of PCBM deposited,which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites,and the effects of ionized impurity scattering on carrier transport become smaller.

Manifestation of external field effect in time-resolved photo-dissociation dynamics of LiF

The photo-dissociation dynamics of LiF is investigated with newly constructed accurate ab initio potential energy curves （PECs） using the time-dependent quantum wave packet method. The oscillations and decay of the wave packet on the adiabats as a function of time are given, which can be compared with the femtosecond transition-state （FTS） spectroscopy. The photo-absorption spectra and the kinetic-energy distribution of the dissociation fragments, which can exhibit the vibration-level structure and the dispersion of the wave packet, respectively, are also obtained. The investigation shows a blue shift of the band center for the photo-absorption spectrum and multiple peaks in the kinetic-energy spectrum with increasing laser intensity, which can be attributed to external field effects. By analyzing the oscillations of the wave packet evolving on the upper adiabat, an approximate inversion scheme is devised to roughly deduce its shape.

Study on Extended Gate Field Effect Transistor with Nano-TiO-2 Sensing Membrane by Sol-Gel Method

The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9.

Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels

A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102.

Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device

We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.

Field effect of Cnaphalocrocis medinalis granulovirus (CnmeGV) on the pest of rice leaffolder

Rice leaffolder,Cnaphalocrocis medinalis(Guenée),has become a major pest throughout the rice cultivating areas of China and caused severe damage to rice production.Cnaphalocrocis medinalis granulovirus(CnmeGV),a naturally occurring baculovirus,is revealed as a potential microbial agent for the pest control.Field applications of CnmeGV were conducted against rice leaffolder larvae in rice paddies.CnmeGV infected the larvae not only in the current generation but also in the successive generation,resulting in a sustained infection in the larva population for at least 48 days.Under diferent concentrations of CnmeGV(7.5×1011 and 1.125×1012 occlusion body(OB)ha-1)at 30 days after spraying,larval population reduced up to 76.32%and rice leaf rolled rate kept in 15.42%.Simultaneously,CnmeGV had no impact on arthropod predators of C.medinalis,with abundances ranging from 2.39 to 3.79 per ten hills.These results revealed that CnmeGV is suitable as a bio-pesticide for rice leaffolder management in rice paddies.

Low field induced giant anisotropic magnetocaloric effect in DyFeO_3 single crystal

We have investigated the anisotropic magnetocaloric effect and the rotating field magnetic entropy in Dy FeO3 single crystal. A giant rotating field entropy change of -ΔSM^R = 16.62 J/kg·K was achieved from b axis to c axis in bc plane at 5 K for a low field change of 20 k Oe. The large anisotropic magnetic entropy change is mainly accounted for the 4 f electron of rare-earth Dy^3＋ ion. The large value of rotating field entropy change, together with large refrigeration capacity and negligible hysteresis, suggests that the multiferroic ferrite Dy FeO3 singlecrystal could be a potential material for anisotropic magnetic refrigeration at low field, which can be realized in the practical application around liquid helium temperature region.

Kinetic Ising model in a time-dependent oscillating external magnetic field:effective-field theory

Recently, Shiet al. [2008 Phys. Left. A 372 5922] have studied the dynamical response of the kinetic Ising model in the presence of a sinusoidal oscillating field and presented the dynamic phase diagrams by using an effective-field theory （EFT） and a mean-field theory （MFT）. The MFT results are in conflict with those of the earlier work of Tome and de Oliveira, [1990 Phys. Rev. A 41 4251]. We calculate the dynamic phase diagrams and find that our results are similar to those of the earlier work of Tome and de Oliveira; hence the dynamic phase diagrams calculated by Shiet al. are incomplete within both theories, except the low values of frequencies for the MFT calculation. We also investigate the influence of external field frequency （w） and static external field amplitude （h0） for both MFT and EFT calculations. We find that the behaviour of the system strongly depends on the values of w and h0.

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

Effects of Magnetic Field on Photodegradation of Methylene Blue over ZnO and TiO2 Powders using UV-LED as a Light Source

The magnetic field effects （MFEs） are studied on photocatalytic degradation of methylene blue （MB） solution using ZnO and TiO2 particles. The UV-VIS-NIR spectrometer is used to monitor the MB concentrations, and the dependence of the reaction rate on the initial dye concentration and settling duration is studied under UV light irradiation. It is found that the MFEs exist on the heterogeneous reaction systems for both ZnO and TiO2 powders and that the extraordinary phenomenon is reproducible. For ZnO powder, the results are in good agreement with the second-order reaction kinetics following the Langmuir-Hinshelwood （L-H） model, while the reaction for TiO2 follows first-order kinetics. It enhances the photodegradation for ZnO, while it reduces or enhances the reaction for TiO2 depending on the initial dye concentrations. The MFEs become small or negligible when the same photodecomposition experiment is carried out after settling the MB solution for more than three hours for both ZnO and TiO2. It is suggested that the key factors of MFEs on photocatalytic degradation is the condition of the MB solution as well as the characteristics of photocatalysts. The alteration of the MFEs ascribed to the solution condition caused by variation of the settling time.

Review of gallium oxide based field-effect transistors and Schottky barrier diodes

Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.

Field-effect transistors based on two-dimensional materials for logic applications

Field-effect transistors （FETs） for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional （2D） materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.

CONTRACTED EFFECT OF BELL-SHADE SHAPE WELDING ARC AND ACCOMPANIED MAGNETIC FIELD WITH SPIRAL PIPE SHAPE

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