ELECTRIC PROPERTY AND STRUCTURE OF EOSIN B,ROSE BENGAL,EOSIN 10B (PHLOXINE B) AND THEIR RARE EARTH COMPLEXES

The electric property and structure of some fluorescein derivatives and their rare earthcomplexes have been reported before.In order to investigate the effect of differentsubstituents on the electric property,the change of resistivity with temperature of eosin B(disodium salt of dibromodinitrofluorescein),rose bengal (disodium salt of tetrachlorotetraiodofluorescein),eosin 10B (dipotassium salt of dichlorotetrabromofluorescein) andtheir complexes with La(Ⅲ),Ce(Ⅲ),Gd(Ⅲ) and Y(Ⅲ) is studied in this paper.

THE ELECTRIC PROPERTY OF SINGLET CARBENE AND ITS ISOELECTRONIC SYSTEM^1——Electrophilic and Nucleophilic Directions of an Atom in the Molecule

The electrostatic potential of carbene and nitrene,have been calculated by AB INITIO method with 6-31G** basis set,there are positive potential regions in the directions of vacant P orbitals,and negative regions in the directions of lone-pair electrons. Therefore,atoms in these molecules have different electric properties in different directions.The idea of electrophilic and nucleophilic directions of an atom in molecules should be introduced.

Preparation and Anti⁃arc Erosion Property of Ag Matrix Electrical Contact Material Reinforced by Novel Ti_(2)Cd

Due to their outstanding electrical contact properties,Cd-containing silver-matrix electrical contact materials can meet the requirements of high stability and long life for military defense and aerospace applications.In order to further reduce the Cd content under the premise of meeting the high-performance requirements,in this study,high-purity intermediate Ti_(2)Cd powder of MAX phase(Ti_(2)CdC)was synthesized with a pressureless technique and then applied to reinforce the Ag matrix.The Cd content of the as-prepared Ag/Ti_(2)Cd composites was actually reduced by 38.31%compared with conventional Ag/CdO material.Based on the systematic study of the effect of heat treatment temperature on the physical phase,morphology,interface and comprehensive physical properties of Ag/Ti_(2)Cd composites,the preferred samples(heat treated at 400°C for 1 h)showed high density(97.77%),low resistivity(2.34μΩ·cm),moderate hardness(90.8HV),high tensile strength(189.9 MPa),and exhibited good electrical contact performance after 40000 cycles of arc discharging under severe conditions(DC 28 V/20 A).The results of microscopic morphological evolution,phase change and elemental distribution of the electrical contact surface show that the combination of high stability of Ti_(2)Cd reinforcing phase,good interfacial bonding with Ag matrix and improved melt pool viscosity in the primary stage of arc erosion,results in low and stable contact resistance(average value 13.20 mΩ)and welding force(average value 0.6 N),low fluctuation of static force(2.2-2.5 N).The decomposition and absorption energy of Ti_(2)Cd and the arc extinguishing effect of Cd vapor are the main reasons for the stable arcing energy and arcing time of electric contacts in the late stage of arc erosion.

Controllable synthesis of elongated hexagonal bipyramid shaped La(OH)3 nanorods and the distribution of electric property by off-axis electron holography

Rare earth oxides/hydroxides are important emerging materials owing to their unique properties. Shape-controlled synthesis of elongated hexagonal bipyramid shaped La(OH)3nanorods with different aspect ratios and trigram-shaped LaCO3OH nanosheets was systematically carried out by controlling the reaction conditions. Hydrazine and polyvinylpyrrolidone (PVP) surfactants used in synthesis are assumed to play a key “dual-template” role in determining the aspect ratio and shape of the resulting nanostructures. Elongated hexagonal bipyramid shaped La(OH)3nanorods were found to grow along the preferred orientation [0001]. Six equivalent crystallographic facets, (Formula presented.), and (Formula presented.) lattice planes, were found to be exposed on the side surfaces on each nanorod as confirmed by combined transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED) analyses. A double-polarization phenomenon was found to occur at the nanorod surfaces by employing off-axis electron holography, implying that the material could be used as an effective dielectric microwave absorber. La(OH)3nanorods with larger aspect ratios exhibit better absorption properties with respect to the maximum reflection loss and effective absorbing bandwidth. Thus, a novel method towards the reasonable design of bipyramid shaped La(OH)3nanorods exhibiting tunable microwave absorption properties is proposed based on our synthesis strategy. [Figure not available: see fulltext.] © 2016, Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

Abnormal electric transport property and magnetoresistance stability of La-Sr-K-Mn-O system

The perovskite samples La1-x（Sr1-yKy）xMnO3 （y = 0.0, 0.2, 04, 0.6, 0.8） were prepared by the solid-state reaction method with comparatively low sintering tem- perature and with comparatively short sintering time, and the electric transport property and temperature stability of MR of this system were studied. The p-T curves show the abnormal phenomenon that with the increase of K doping amount, resistivity increases, and the insulator-metal transition temperature decreases, which is because the influence of the occupation disorder degree of A-site ions σ2 on the electric transport property of perovskite manga- nites is larger than that of the radius of A-site ions （rA）. In the temperature range below 225 K, MR increases contin- uously with the decrease of temperature, which is the characteristic of low-field magnetoresistance; in the com- paratively wide temperature range near 250 K, the MR- T curves of all the samples are comparatively fiat, and the value of MR almost does not change with temperature, which shows the temperature stability of magnetoresis- tance, and can be explained by the competition between the low-field magnetoresistance induced by spin-dependent tunneling of surface phase and the intrinsic magnetoresis- tance of grain phase. The magnetoresistance value of the sample with y = 0.8 keeps at （7.92 ±0.36） % in the very wide temperature range of 225-275 K, and this is a goodreference for the preparation of this kind of sample with practical application value in the future.

Preparation of ZAO film by low-temperature hydrothermal approach and its electrical property

Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing temperature and time were 200 ℃ and 2-6 h, respectively. The structure of the thin films was identified by X-ray diffraction (XRD), the surface morphology and thickness of the thin films were observed by scanning electron microscopy (SEM), and the electrical performance of the thin films was measured by four-point probes. It was shown that the films with an average particle size of 27.53 nm had a preferential orientation along (002), Al3+ had replaced the position of Zn2+ in the lattice without forming the Al2O3 phase and its thickness was 20-25 μm. With the increased annealing time, the intensity of diffraction peaks was decreased, the film exhibited irregular surface morphology gradually, and the resistivity of ZAO films was increased. The lowest resistivity obtained in this study was 3.45×10-5Ω·cm.

Effect of Fluid Electrical Property Changes on Surface Transverse Wave Sensors

A fluid sensor based on the surface transverse wave (STW) delay line on ST-cut quartz has been developed and tested in a large number of fluids with different viscosity and permittivity levels.Influence of fluid mechanical and electrical properties on the sensor's response has been determined and the sensor's performance has been compared with a bulk acoustic wave (BAW) viscosity sensor.The result shows that the viscosity sensitivity of the developed STW sensor represented by the signal to noise ratio is lower than that of a 5 MHz BAW sensor.Applications of the sensor in detecting the quality of industrial fluids are discussed.

The Effect of Casting Solvent on the Electrical Property of Polyaniline/Polyacrylonitrile

Blends of dodecylbenzene sulfonic acid doped polyaniline （PANI-DBSA） and polyacryionitrile （PAN） dissolved in either CHCh/DMF or CHCl3/DMSO mixture were solution cast. The conductivity of the blends with various compositions was measured and the doped ：xtent of PANI- DBSA in different casting solvent systems was studied. Solution blends prepared from CHCh/DMSO displayed higher conductivity than those obtained via CHCh/DMF. The dedoping reaction of PANI-DBSA in CHCl3/DMF identified by UV-Vis and FTIR analysis contributed to the lower conductivity of PANI-DBSA/PAN blend.

Structure and electrical properties of polysilicon films doped with ammonium tetraborate tetrahydrate

Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensively analyzed.The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions.The preferred orientation is the(111)direction.The grain size increases from 16−23 nm to 21−47 nm,by~70%on average.Comparing with other reported films,Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration(>10^(20)cm^(−3))and higher carrier mobility(>30 cm2/(V·s)).The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size.Heavy doping property is proved by the mean sheet resistance(Rsheet,m)and distribution profile.The R_(sheet,m)decreases by more than 30%,and it can be further decreased by 90%if the annealing temperature or duration is increased.The boron concentration of ATT-pPoly film annealed at 950℃ for 45 min is~3×10^(20)cm^(−3),and the distribution is nearly the same,except near the surface.Besides,the standard deviation coefficient(σ)of Rsheet,m is less than 5.0%,which verifies the excellent uniformity of ATT-pPoly film.

Achieving Synergistic Improvement in Dielectric and Energy Storage Properties of All-Organic Poly(Methyl Methacrylate)-Based Copolymers Via Establishing Charge Traps

How to achieve synergistic improvement of permittivity(ε_(r))and breakdown strength(E_(b))is a huge challenge for polymer dielectrics.Here,for the first time,theπ-conjugated comonomer(MHT)can simultaneously promote theε_(r)and E_(b)of linear poly(methyl methacrylate)(PMMA)copolymers.The PMMA-based random copolymer films(P(MMA-co-MHT)),block copolymer films(PMMA-b-PMHT),and PMMA-based blend films were prepared to investigate the effects of sequential structure,phase separation structure,and modification method on dielectric and energy storage properties of PMMA-based dielectric films.As a result,the random copolymer P(MMA-coMHT)can achieve a maximumε_(r)of 5.8 at 1 kHz owing to the enhanced orientation polarization and electron polarization.Because electron injection and charge transfer are limited by the strong electrostatic attraction ofπ-conjugated benzophenanthrene group analyzed by the density functional theory(DFT),the discharge energy density value of P(MMA-co-PMHT)containing 1 mol%MHT units with the efficiency of 80%reaches15.00 J cm^(-3)at 872 MV m^(-1),which is 165%higher than that of pure PMMA.This study provides a simple and effective way to fabricate the high performance of polymer dielectrics via copolymerization with the monomer of P-type semi-conductive polymer.

Ultrahigh thermoelectric properties of p‐type Bi_(x)Sb_(2−x)Te_(3) thin films with exceptional flexibility for wearable energy harvesting

Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.

Effects of filler loading and surface modification on electrical and thermal properties of epoxy/montmorillonite composite

Epoxy-based composites containing montmorillonite(MMT)modified by silylation reaction withγ-aminopropyltriethoxysilane(γ-APTES)and 3-(glycidyloxypropyl)trimethoxysilane(GPTMS)are successfully prepared.The effects of filler loading and surface modification on the electrical and thermal properties of the epoxy/MMT composites are investigated.Compared with the pure epoxy resin,the epoxy/MMT composite,whether MMT is surface-treated or not,shows low dielectric permittivity,low dielectric loss,and enhanced dielectric strength.The MMT in the epoxy/MMT composite also influences the thermal properties of the composite by improving the thermal conductivity and stability.Surface functionalization of MMT not only conduces to the better dispersion of the nanoparticles,but also significantly affects the electric and thermal properties of the hybrid by influencing the interfaces between MMT and epoxy resin.Improved interfaces are good for enhancing the electric and thermal properties of nanocomposites.What is more,the MMT modified with GPTMS rather thanγ-APTES is found to have greater influence on improving the interface between the MMT filler and polymer matrices,thus resulting in lower dielectric loss,lower electric conductivity,higher breakdown strength,lower thermal conductivity,and higher thermal stability.

Effect of Ba_(0.5)Bi_(0.5)Fe_(0.9)Sn_(0.1)O_3 addition on electrical properties of BaCo_(0.02)~ⅡCo_(0.04)~ⅢBi_(0.94)O_3 thick-film thermistors

Thick-film thermistor with negative temperature coefficient（NTC）, low room-temperature resistivity and modest thermistor constant was screen-printed on the alumina substrate by the combination of 30.94III0.04II0.02 B OBi Coa Co with Ba0.5Bi0.5Fe0.9Sn0.1O3. The electrical properties of the thick films were characterized by a digital multimeter, a Keithley 2400 and an impedance analyzer. The results show that with the Ba0.5Bi0.5Fe0.9Sn0.1O3 content increasing from 0.05 to 0.25, the values of room-temperature resistivity, thermistor constant and peak voltage of the thick films increases and are in the ranges of 1.47-26.5 ？·cm, 678-1345 K and 18.9-47.0 V, respectively. The corresponding current at the peak voltage of the thick films decreases and is in the range of 40-240 m A. The impedance spectroscopy measurement demonstrates that the as-prepared thick films show the abnormal electrical heterogeneous microstructure, consisting of high-resistive grains and less resistive grain boundary regions. It can be concluded that the addition of Ba0.5Bi0.5Fe0.9Sn0.1O3 into 30.94III0.04II0.02 Ba Co OBi Co improves the thermistor behavior and but also deteriorates the current characteristics.

First Principle Study on the Magnetic and Electric Properties of Wurtzite Cr-phosphides and Cr-sulphides： Several Half-metallic Ferromagnets

The geometrical structures of wurtzite CrX （X=As, Sb, O, Se, and Te） were optimized, then their electric and magnetic properties were investigated by the first-principle calculations within the generalized gradient approximation for the exchange-correlation functional based on the density functional theory. These Cr-phosphides and Cr-sulphides were predicted to be half-metallic ferromagnets whose spin-polarization at the Fermi level is absolutely 100%. The molecular magnetic moments of Cr-phosphides and Cr-sulphides are 3.00 and 4.00 μB, which arise mainly from Cr-ions, respectively. There is ferromagnetic coupling in both Cr- phosphides and Cr-sulphides. The Curie temperatures of Cr-sulphides and Cr-phosphides are high. The electronic structures of Cr-ions are a1g^2↑↓t1u^4↑↓t1u^1↑↓eg^2↑↓in Cr-phosphides and a1g^2↑↓t1u^4↑↓t1u^1↑t2g^3↑in Cr-sulphides, respectively.

Structure and Electric Properties of (1-x)(Bi_(1/2)Na_(1/2)) TiO_3-xBaTiO_3 Systems

The structural, dielectric and piezoelectric properties of （1-x）（Bi1/2Na1/2） TiO3-xBaTiO3 ceramics were investigated for the compositional range, x=0.02, 0.04, 0.06, 0.08, 0.10. The samples were synthesized by a conventional solid-state reaction technique. All compositions show a single perovskite structure, and X-ray powder diffraction patterns can be indexed using a rhombohedral structure. Lattice constants and lattice distortion increase while the amount of BaTiO3 increases. The X-ray diffraction results show the morphotropic phase boundary （MPB） of （1-x）（Bi1/2Na12） TiO3-xBaTiO3 exists in near x=0.06-0.08. Temperature dependence of dielectric constant eT33/ε0 measurement reveals that all compositions experience one structural phase and two ferroelectric phases transition below 400℃： rhombohedral （or rhombohedral plus tetragonal） ferroelectric phase ←→ tetragonal antiferroelectric phase ←→ tetragonal paraelectric phase. Relaxor behaviors exist in the course of ferroelectric to antiferroelectric phase transition. Dielectric and piezoelectric properties are enhanced in the MPB range for （ 1-x）（Bi1/2Na1/2）TiO3-xBaTiO3.

Effect of SiO_2 addition on the microstructure and electrical properties of ZnO-based varistors

The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.

Effect of annealing treatment on the structural, optical, and electrical properties of Al-doped ZnO thin films

Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.

Electrical properties of fly ash and its decarbonization by electrostatic separation

The basic principle of fly ash triboelectrification is analysed. The mineral electrical index and test method are introduced. The electric difference of different mineral composition of fly ash is discussed by analysis of chemical and mineral composition of fly ash in Xinwen power plant. The dielectric constant and charge-mass ratio of carbon and ash of fly ash are tested. Combined with the experimental study on rotary triboelectrostatic separation, the charged characteristic of fly ash particles with different size is gained. The results show that the dielectric constant of fly ash with different grain size decreased with the decrease of particle size, which lead to the poor electrical conductivity, Thus it can be seen that par- ticle size plays a leading role in conductivity, The charge of carbon and ash with each size increased with the decreased of particle size; and the charge-mass ratio between carbon and ash with the same size lar- ger with the decrease of size, which indicated that the finer particle size, the more favorable for triboelec- trification separation. In the same conditions, the best decarburization effect is realized when the particle size ranges from 0.038 to 0.074 ram, whose decarbonization rate and efficiency index reached 38.93% and 120.83% respectively.

Microstructure and electrical properties of Y_2O_3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.

Microstructure and Electrical Properties of Er_2O_3-Doped ZnO-Based Varistor Ceramics Prepared by High-Energy Ball Milling

The microstructure, electrical properties and density of ZnO-based varistor ceramics with different Er2O3 content prepared by high-energy ball milling （HEBM） and sintered at 800℃ were investigated. With increasing Er2O3 content, the ZnO grain size decreases due to the Er-rich phases inhibiting grain growth ; and nonlinear coefficient （ α ） decreases because of the decrease of barrier height （φB） The breakdown voltage （Eb） and density increase, whereas leakage current （IL） decreases with increasing Er2O3 content. The barrier height （φB）, donor concentration （Nd）, density of interface states （Ns） decrease and barrier width （ω） increases with increasing Er2O3 content due to acceptor effect of Er2O3 in varistor ceramics.