Electrical characteristics of new three-phase traction power supply system for rail transit

A novel three-phase traction power supply system is proposed to eliminate the adverse effects caused by electric phase separation in catenary and accomplish a unifying manner of traction power supply for rail transit.With the application of two-stage three-phase continuous power supply structure,the electrical characteristics exhibit new features differing from the existing traction system.In this work,the principle for voltage levels determining two-stage network is dissected in accordance with the requirements of traction network and electric locomotive.The equivalent model of three-phase traction system is built for deducing the formula of current distribution and voltage losses.Based on the chain network model of the traction network,a simulation model is established to analyze the electrical characteristics such as traction current distribution,voltage losses,system equivalent impedance,voltage distribution,voltage unbalance and regenerative energy utilization.In a few words,quite a lot traction current of about 99%is undertaken by long-section cable network.The proportion of system voltage losses is small attributed to the two-stage three-phase power supply structure,and the voltage unbal-ance caused by impedance asymmetry of traction network is less than 1‰.In addition,the utilization rate of regenerative energy for locomotive achieves a significant promotion of over 97%.

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

In order to investigate their electrical characteristics, high-voltage light-emitting-diodes （HV-LEDs） each contain- ing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors （IFs） of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined, The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of the failure cell is 76.8 Ω, while that of the normal cell is 21.3 Ω. The scanning electron microscope （SEM） image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LEDs needs to be optimized.

Electrical Characteristics of Pulsed Corona Discharge Plasmas in Chitosan Solution

Pulsed discharge plasma has exhibited active potential to prepare low molecular weight chitosan. In the present study, the viscosity of ehitosan solution was decreased noticeably after treated with pulsed corona discharge plasma. An experimental investigation on electrical characteristics of pulsed corona discharge plasma in chitosan solution was conducted with a view toward getting insight into discharge process. Factors affecting I-V curve, single pulse injec- tion energy and pulse width were studied. Experimental results showed positive effect of pulsed peak voltage on discharge plasma in chitosan solution. Pulse-forming capacitor greatly influenced the discharge form, and 4 nF was observed as a suitable value for efficiently generating stable discharge plasmas. As the electrode distance was larger than 10 ram, it had slight impact on dis- charge plasma due to the excellent conductive-property of chitosan solution. The injection energy significantly increased with air flow rate, while the pulse width hardly changed as the air flow rate increased from 0.5 m^3/h to 1.0 m^3/h. This study is expected to provide reference for promoting the application of pulsed corona discharge plasma to ehitosan solution treatment.

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited ZnO-Channel/Al_2O_3-Dielectric

High-performance thin-film transistors （TFTs） with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 （4%） and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.

Electrical characteristics of SiGe-on-insulator nMOSFET and SiGe-silicon-on-aluminum nitride nMOSFET

This paper investigates the electrical characteristics and temperature distribution of strained Si/SiGe n-type metal oxide semiconductor field effect transistor （nMOSFET） fabricated on silicon-on-aluminum nitride （SOAN） substrate. This novel structure is named SGSOAN nMOSFET. A comparative study of self-heating effect of nMOSFET fabricated on SGOI and SGSOAN is presented. Numerical results show that this novel SGSOAN structure can greatly eliminate excessive self-heating in devices, which gives a more promising application for silicon on insulator to work at high temperatures.

Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 K to 400 K

The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K. The variation of electrical parameters （threshold voltage, field effect mobility, sub-threshold swing, and leafage current） with decreasing temperature are then extracted and analyzed. Moreover, the dom- inated carrier transport mechanisms at different temperature regions are investigated. The experimental data show that the carrier transport mechanism may change from trap-limited conduction to variable range hopping conduction at lower temperature. Moreover, the field effect mobilities are also extracted and simulated at various temperatures.

Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.

Ion property and electrical characteristics of 60MHz very-high-frequency magnetron discharge at low pressure

The pre-ionized 60 MHz very-high-frequency （VHF） magnetron discharge at low pressure, assisted by inductively coupled plasma （ICP） discharge, was developed. The measurement of ion flux density and ion energy to the substrate was carried out by a retarding field energy analyzer. The electric characteristics of discharge were also investigated by voltage-current probe technique. It was found that by reducing the discharge pressure of VHF magnetron discharge from 5 to 1 Pa, the ion flux density increased about four times, meanwhile the ion energy also increased doubly. The electric characteristics of discharge also showed that a little improvement of sputtering effectiveness was achieved by reducing discharge pressure. Therefore, the deposition property of VHF （60 MHz） magnetron sputtering can be improved by reducing the discharge pressure using the ICP-assisted pre-ionized discharge.

Effects of manganese dioxide additives on the electrical characteristics of Al-doped ZnO varistors

The effects of manganese dioxide (MnO 2 ) additives on the electrical characteristics of the Al-doped ZnO varistors are investigated. The leakage current densities of the samples decrease first and then increase again with the increase of the amount of MnO 2 additives. Correspondingly, the nonlinear coefficients of the samples keep on increasing and then decrease. In addition, the donor densities increase monotonously with the amount of the doped MnO 2 increasing. The effects of MnO 2 additives on the electrical characteristics of the samples are different from the conclusion of previous literatures. The reasons of the distinct effects are supposed to be related with the donor and interface state densities of the samples.

Electrical characteristics of laminar propane flame during head-on quenching

The electrical characteristics of laminar propane flame during head-on quenching were investigated experimentally and computationally.A variable small electric field was applied between the burner and the quenching plate,which recorded flame current as a function of the height of the quenching plate,for both polarities,different premixed-air volume,and quenching plate materials.More detailed information of flame,such as the distribution of OH radical and main charged species(H3O+and e-)were obtained by using numerical simulation.The results showed that during the head-on quenching,the resistance of the propane flame is on the order of 108Ω,the flame current increases with the increase of the premixed-air volume,and the effect of the quenching plate materials on the flame current is negligible.In addition,it is found that the direction of the electric field has a significant influence on the flame current,indicating the"rectifier"characteristics of the flame.Moreover,it is interestingly found that the trend of flame current for burner-(burner is negative)is more consistent with the trend of the maximum OH mole concentration than for burner+(burner is positive),which indicates that the trend of flame current for burner-can more accurately reflect the combustion state during head-on quenching.And it would be a better choice to use burner as the negative electrode when diagnosing the combustion state with an applied electric field.

Effect of Metal Contact and Rapid Thermal Annealing on Electrical Characteristics of Graphene Matrix

Development of graphene field effect transistors （GFETs） faces a serious challenge of graphene interface to the dielectric material. A single layer of intrinsic graphene has an average sheet resistance of the order of 1-5 kΩ/□. The intrinsic nature of graphene leads to higher contact resistance yielding into the outstanding properties of the material. We design a graphene matrix with minimized sheet resistance of 0.185 kΩ/□ with Ag contacts. The developed matrices on silicon substrates provide a variety of transistor design options for subsequent fabrication. The graphene layer is developed over 400 nm nickel in such a way as to analyze hypersensitive electrical properties of the interface for exfoliation. This work identifies potential of the design in the applicability of few-layer GFETs with less process steps with the help of analyzing the effect of metal contact and post-process anneMing on its electrical fabrication.

Event-Driven Non-Intrusive Load Monitoring Algorithm Based on Targeted Mining Multidimensional Load Characteristics

Nowadays,the advancement of nonintrusive load monitoring(NILM)has been hastened by the ever-increasing requirements for the reasonable use of electricity by users and demand side management.Although existing researches have tried their best to extract a wide variety of load features based on transient or steady state of electrical appliances,it is still very difficult for their algorithm to model the load decomposition problem of different electrical appliance types in a targeted manner to jointly mine their proposed features.This paper presents a very effective event-driven NILM solution,which aims to separately model different appliance types to mine the unique characteristics of appliances from multi-dimensional features,so that all electrical appliances can achieve the best classification performance.First,we convert the multi-classification problem into a serial multiple binary classification problem through a pre-sort model to simplify the original problem.Then,ConTrastive Loss K-Nearest Neighbour(CTLKNN)model with trainable weights is proposed to targeted mine appliance load characteristics.The simulation results show the effectiveness and stability of the proposed algorithm.Compared with existing algorithms,the proposed algorithm has improved the identification performance of all electrical appliance types.

Characteristics and experience in the electrical design of the first domestically-integrated large-scale air separation unit

The first domestically-integrated large-scale air separation unit （ASU） with a capacity of 60 000 m^3/h was successfully built and put into operation at Baosteel. Compared with the electrical design of the imported equipment of the same type,this ASU has an electrical protection interlink that is independent from the distribution control system （DCS）. With the design idea of simplicity, the ASU features a simplified configuration and an audio alarm system for electrical failures. It helps reduce the failure rate of the electrical equipment and detect failures quickly and accurately. It will effectively enhance safe and stabilized production. The ASU can not only reduce the cost of investment, but also ensure a smooth and stable running of the whole electrical equipment. This study focuses on the experience and understanding of the unit design and commissioning.

Temperature-dependent characteristics of 4H-SiC junction barrier Schottky diodes

The current-voltage characteristics of 4H-SiC junction barrier Schottky （JBS） diodes terminated by an offset field plate have been measured in the temperature range of 25-300℃. An experimental barrier height value of about 0.5 eV is obtained for the Ti/4H-SiC JBS diodes at room temperature. A decrease in the experimental barrier height and an increase in the ideality factor with decreasing temperature are shown. Reverse recovery testing also shows the temperature dependence of the peak recovery current density and the reverse recovery time. Finally, a discussion of reducing the reverse recovery time is presented.

Characteristics of Atmospheric Pressure Rotating Gliding Arc Plasmas

In this work, a novel direct current （DC） atmospheric pressure rotating gliding arc （RGA） plasma reactor has been developed for plasma-assisted chemical reactions. The influence of the gas composition and the gas flow rate on the arc dynamic behaviour and the formation of reactive species in the N2 and air gliding arc plasmas has been investigated by means of electrical signals, high speed photography, and optical emission spectroscopic diagnostics. Compared to conventional gliding arc reactors with knife-shaped electrodes which generally require a high flow rate （e.g., 10-20 L/min） to maintain a long arc length and reasonable plasma discharge zone, in this RGA system, a lower gas flow rate （e.g., 2 L/min） can also generate a larger effective plasma reaction zone with a longer arc length for chemical reactions. Two different motion patterns can be clearly observed in the N2 and air RGA plasmas. The time-resolved arc voltage signals show that three different arc dynamic modes, the arc restrike mode, takeover mode, and combined modes, can be clearly identified in the RGA plasmas. The occurrence of different motion and arc dynamic modes is strongly dependent on the composition of the working gas and gas flow rate.

Discharge Characteristics of Series Surface/Packed-Bed Discharge Reactor Diven by Bipolar Pulsed Power

The discharge characteristics of the series surface/packed-bed discharge （SSPBD） reactor driven by bipolar pulse power were systemically investigated in this study. In order to evaluate the advantages of the SSPBD reactor, it was compared with traditional surface discharge （SD） reactor and packed-bed discharge （PBD） reactor in terms of the discharge voltage, discharge current, and ozone formation. The SSPBD reactor exhibited a faster rising time and lower tail voltage than the SD and PBD reactors. The distribution of the active species generated in differ- ent discharge regions of the SSPBD reactor was analyzed by optical emission spectra and ozone analysis. It was found that the packed-bed discharge region （3.5 mg/L）, rather than the surface discharge region （1.3 mg/L） in the SSPBD reactor played a more important role in ozone gener- ation. The optical emission spectroscopy analysis indicated that more intense peaks of the active species （e.g. N2 and OI） in the optical emission spectra were observed in the packed-bed region.

Comprehensive simulation of snow crystal deposition and electric field characteristics of composite sheath improved porcelain cantilever insulator in a wind and snow environment

The installed porcelain insulators on existing railway lines in China are prone to“snow flash”in winter.In order to prevent the occurrence of“snow flash”and improve the reliability of the insulators,a composite-porcelain insulator is designed.A multi-physics coupling simulation model is built based on numerical simulation methods of the electromagnetic field theory and computational fluid dynamics.Taking average electric field intensity on the surface of the insulator as the characteristic parameter of the electric field distortion degree and the snow crystal collision coefficient and distribution coefficient as the characteristic parameter of snow crystal deposition,the characteristics of snow crystal deposition under different wind speeds and wind direction angles and the electric field characteristics under two snow cover types are analyzed.The simulation results show that the average electric field intensity of composite-porcelain insulators is 10.4%and 13.8%,respectively,lower than that of porcelain insulators in vertical and horizontal wind snow covers,which can effectively reduce the degree of electric field distortion.The collision coefficient of snow crystals on the surface of the composite-porcelain insulator sheds is 16.0%higher than that of the porcelain insulator,and the collision coefficient of the trunk and the fittings are lower 20.2%and 11.9%than that of the porcelain insulator.There is almost no change in the distribution coefficient of the insulator sheds.

Influence of Different Compensation Modes on Morphological and Electrical Characteristics of Secondary Arcs

UHV transmission lines are usually equipped with high-voltage shunt reactors.These reactors and the resulting degree of compensation affect the voltage,current,and other electrical characteristics of secondary arcs.In this paper,a low-voltage experimental simulation setup to produce secondary arcs in different compensation modes is established,and the morphological and electrical characteristics of recorded arc images and discharge waveforms are analyzed.For morphological characteristics,the degree of secondary arcs is compared for different compensation modes.For electrical characteristics,the arc waveform,volt–current characteristics,and zero-current time of secondary arcs are compared for different compensation modes.These results provide a foundation to determine the time of extinction of secondary arcs on overhead lines in the case of compensation,as well as technical support to develop effective arc suppression and extinction techniques.

Electrical responses and classification of complex waterflooded layers in carbonate reservoirs: A case study of Zananor Oilfield, Kazakhstan

Experiments of electrical responses of waterflooded layers were carried out on porous,fractured,porous-fractured and composite cores taken from carbonate reservoirs in the Zananor Oilfield,Kazakhstan to find out the effects of injected water salinity on electrical responses of carbonate reservoirs.On the basis of the experimental results and the mathematical model of calculating oil-water relative permeability of porous reservoirs by resistivity and the relative permeability model of two-phase flow in fractured reservoirs,the classification standards of water-flooded layers suitable for carbonate reservoirs with complex pore structure were established.The results show that the salinity of injected water is the main factor affecting the resistivity of carbonate reservoir.When low salinity water(fresh water)is injected,the relationship curve between resistivity and water saturation is U-shaped.When high salinity water(salt water)is injected,the curve is L-shaped.The classification criteria of water-flooded layers for carbonate reservoirs are as follows:(1)In porous reservoirs,the water cut(fw)is less than or equal to 5%in oil layers,5%–20%in weak water-flooded layers,20%–50%in moderately water-flooded layers,and greater than 50%in strong water-flooded layers.(2)For fractured,porous-fractured and composite reservoirs,the oil layers,weakly water-flooded layers,moderately water-flooded layers,and severely water-flooded layers have a water content of less than or equal to 5%,5%and 10%,10%to 50%,and larger than 50%respectively.

Experimental and numerical investigation on the uniformity of nanosecond pulsed dielectric barrier discharge influenced by pulse parameters

Nanosecond(ns)pulsed dielectric barrier discharge(DBD)is considered as a promising method to produce controllable large-volume and high activity low-temperature plasma at atmospheric pressure,which makes it suitable for wide applications.In this work,the ns pulse power supply is used to excite Ar DBD and the influences of the pulse parameters(voltage amplitude,pulse width,pulse rise and fall times)on the DBD uniformity are investigated.The gas gap voltage(Ug)and conduct current(Ig)are separated from the measured voltage and current waveforms to analyze the influence of electrical parameters.The spectral line intensity ratio of two Ar excited species is used as an indicator of the electron temperature(Te).The time resolved discharge processes are recorded by an intensified charge-coupled device camera and a one-dimensional fluid model is employed to simulate the spatial and temporal distributions of electrons,ions,metastable argon atoms and Te.Combining the experimental and numerical results,the mechanism of the pulse parameters influencing on the discharge uniformity is discussed.It is shown that the space electric field intensity and the space particles'densities are mainly responsible for the variation of discharge uniformity.With the increase of voltage and pulse width,the electric field intensity and the density of space particles increased,which results in the discharge mode transition from non-uniform to uniform,and then non-uniform.Furthermore,the extension of pulse rise and fall times leads to the discharge transition from uniform to nonuniform.The results are helpful to reveal the mechanism of ns pulsed DBD mode transition and to realize controllable and uniform plasma sources at atmospheric pressure.