Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

In this work, we use a 3-nm-thick Al0.64In0.36N back-barrier layer in In0.17Al0.83N/GaN high-electron mobility transistor （HEMT） to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al0.64In0.36N back-barrier on the direct-current （DC） and radio-frequency （RF） characteristics of InAlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al0.64In0.36N back-barrier and no parasitic electron channel is formed. Comparing with the conventional InAlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect （SCE） for gate length decreasing down to 60 nm （9-nm top barrier）. For a 70-nm gate length, the peak current gain cut-off frequency （fT） and power gain cut-off frequency （fmax） of the back-barrier HEMT are 172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.

An Investigation on the Barriers and Facilitators of the Implementation of Electronic Health Records (EHR)

The application of technology in health care, in the form of electronic health records (EHR), is the most important and necessary issue in order to improve the quality of health care, and studies have shown that, not only is it a way to integrate information and represent the condition of patients, and a dynamic source for health care, however it leads to gain access to clinical information and records, electronic communications, comprehensive training and management, and ultimately enhancing the public health;the aim of this study is to investigate the factors influencing the implementation of EHR, which are known as barriers and facilitators. The research is conducted in the form of a review research, and with the help of the Keywords of EHR;barriers and facilitators, articles, from 2008 to 2013, were searched and studied in the Internet-databases. The results of the studies show that the most effective factors include: efficiency, motivation, management, and the participation of end users. Factors such as technical aspects ease of use, available resources, and human resources, have limited effects. And security and privacy, the expected output, lack of time, and workload have relative effects, and also the relation between the patient and clinical staff, has no effects in the process of implementing EHR.

High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diodes at room temperature

This paper reports that Ni and Ti/4H-SiC Schottky barrier diodes （SBDs） were fabricated and irradiated with 1 MeV electrons up to a dose of 3.43 × 10^14 e/cm2. After radiation, the Schottky barrier height φB of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV, but decreased from 0.95 eV to 0.94 eV for the Ti/4H-SiC SBD. The degradation of φB could be explained by interface states of changed Schottky contacts. The on-state resistance Rs of both diodes increased with the dose, which can be ascribed to the radiation defects. The reverse current of the Ni/4H-SiC SBD slightly increased, but for the Ti/4H-SiC SBD it basically remained the same. At room temperature, φB of the diodes recovered completely after one week, and the RS partly recovered.

Diagnosis of Electronic Excitation Temperature in Surface Dielectric Barrier Discharge Plasmas at Atmospheric Pressure

The electronic excitation temperature of a surface dielectric barrier discharge （DBD） at atmospheric pressure has been experimentally investigated by optical emission spectroscopic measurements combined with numerical simulation. Experiments have been carried out to deter- mine the spatial distribution of electric field by using FEM software and the electronic excitation temperature in discharge by calculating ratio of two relative intensities of atomic spectral lines. In this work, we choose seven Ar atomic emission lines at 415.86 nm [（3s^23p^5）5p →（3s^23p^5）4s] and 706.7 nm, 714.7 nm, 738.4 nm, 751.5 nm, 794.8 nm and 800.6 nm [（3s^23p^5）4p → （3s^23p^5）4s] to estimate the excitation temperature under a Boltzmann approximation. The average electron energy is evaluated in each discharge by using line ratio of 337.1 nm （N2（C^3Пu →B3Пg）） to 391.4 nm （N2^＋（B2 ∑u^＋→ ∑g^＋））. Furthermore, variations of the electronic excitation tempera- ture are presented versus dielectric thickness and dielectric materials. The discharge is stable and uniform along the axial direction, and the electronic excitation temperature at the edge of the copper electrode is the largest. The corresponding average electron energy is in the range of 1.6- 5.1 eV and the electric field is in 1.7-3.2 MV/m, when the distance from copper electrode varies from 0 cm to 6 cm. Moreover, the electronic excitation temperature with a higher permittivity leads to a higher dissipated electrical power.

Sequential over-barrier ionization of multi-electron atoms in the tens-to-hundreds keV/u energy range

Our previous work on the classical over-barrier ionization model for helium double ionization is extended to the complex multi-electron system of Ne. The total and q-fold ionization cross sections are calculated at energies ranging from a few tens to several hundred keV/u. The calculation results are in good agreement with the experimental data, and the energy dependence of the cross sections suggests that the multi-ionization of a strong perturbated complex atom is probably the sequential over-barrier ionization process.

Electronic transport for armchair graphene nanoribbons with a potential barrier

This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon （AGNR）. Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.

Comparison of nitride-based dual-wavelength lightemitting diodes with an InAlN electron-blocking layer and with p-type doped barriers

The advantages of nitride-based dual-wavelength light-emitting diodes （LEDs） with an InA1N electron blocking layer （EBL） are studied. The emission spectra, carrier concentration in the quantum wells （QWs）, energy band and internal quantum efficiency （IQE） are investigated. The simulation results indicate that an LED with an InA1N EBL performs better over a conventional LED with an A1GaN EBL and an LED with p-type-doped QW barriers. All of the advantages are due to the enhancement of carrier confinement and the lower electron leakage current. The simulation results also show that the efficiency droop is markedly improved and the luminous intensity is greatly enhanced when an InAlN EBL is used.

Enhancement-mode AlGaN/GaN high electronic mobility transistors with thin barrier

An enhancement-mode （E-mode） A1GaN/GaN high electron mobility transistor （HEMTs） was fabricated with 15-nm A1GaN barrier layer. E-mode operation was achieved by using fluorine plasma treatment and post-gate rapid thermal annealing. The thin barrier depletion-HEMTs with a threshold voltage typically around -1.7 V, which is higher than that of the 22-nm barrier depletion-mode HEMTs （-3.5 V）. Therefore, the thin barrier is emerging as an excellent candidate to realize the enhancement-mode operation. With 0.6-tim gate length, the devices treated by fluorine plasma for 150-W RF power at 150 s exhibited a threshold voltage of 1.3 V. The maximum drain current and maximum transconductance are 300 mA/mm, and 177 mS/ram, respectively. Compared with the 22-nm barrier E-mode devices, VT of the thin barrier HEMTs is much more stable under the gate step-stress,

Protective and Regenerative Efficacy of a Plant Oil-Based Day and Night Cream: Investigated by a Novel Approach to Reveal the Impact of Blue Light Irradiation on Epidermal Barrier Integrity and Lipid Matrix

In recent years, the harmful effects of blue light (400 - 500 nm) as a component of visible light (400 - 700 nm) have increasingly gained attention of science, industry, and consumers. To date, only a few in vivo test methods for measuring the effects of blue light on the skin have been described. A direct measurement method that can detect the immediate effects of blue light on the epidermal permeability barrier (EPB) is still lacking. In this study, we present a new methodological approach that can be used to investigate both the protective and regenerative effects of cosmetic products on the EPB after blue light irradiation. In a study with 14 female volunteers, it was investigated whether the regular application of an O/W emulsion (day cream) can strengthen and protect the epidermal barrier against damaging blue light radiation of 60 J/cm2 (protective study design) and also whether a disruption of the epidermal barrier caused by blue light radiation is restored faster and better by the regular application of another O/W emulsion (night cream) than in product-untreated skin (regenerative study design). The two O/W emulsions are different in plant oil, active ingredient composition and texture. The seven-day treatment with the day cream initially led to a significant increase in the normalized lipid lamellae length in the intercellular space, whereas the irradiation with blue light after 24 hours led to a significant decrease in the lipid lamellae length in the untreated test area, but not in the area previously treated with the product. Regarding the regenerative study design, a two-day treatment with the night cream was able to restore a blue-light-induced decrease in lipid lamellae length in the intercellular space. In summary, with the study designs presented here, the protective and regenerative effect of two cosmetic products could be demonstrated for the first time on the integrity of the EPB after blue light irradiation and the data showed that the Lipbarvis® method is suitable for investigating the damaging effects of blue light on the EPB in vivo.

Temperature-dependent electrical properties of β-Ga_2O_3Schottky barrier diodes on highly doped single-crystal substrates

Beta-phase gallium oxide(β-Ga_2O_3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates,where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga_2O_3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.

High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact

The Ni/4H-SiC Schottky barrier diodes （SBDs） and transfer length method （TLM） test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with i MeV electrons up to a dose of 3.43 × 10^14 e/cm^-2. After radiation, the forward currents of the SBDs at 2 V decreased by about 50%, and the reverse currents at -200 V increased by less than 30%. Schottky barrier height （ФB） of the Ni/4H-SiC SBD increased from 1.20 eV to 1.21 eV under 0 V irradiation bias, and decreased from 1.25 eV to 1.19 eV under -30 V irradiation bias. The degradation of ФB could be explained by the variation of interface states of Schottky contacts. The on-state resistance （Rs） and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance （ρc） of the Ni/SiC Ohmic contact increased from 5.11× 10^-5Ω· cm^2 to 2.97× 10^-4Ω· cm^2.

Oxidation and Hot Corrosion of Gradient Thermal Barrier Coatings Prepared by EB-PVD

The performances of gradient thermal barrier coatings (GTBCs) produced by EB-PVD were evaluated by isothermal oxidation and cyclic hot corrosion (HTHC) tests. Compared with conventional two-layered TBCs, the GTBCs exhibite better resistance to not only oxidation but also hot-corrosion. A dense Al2O3 layer in the GTBCs effectively prohibites inward diffusion of O and S and outward diffusion of Al and Cr during the tests. On the other hand, an "inlaid" interface, resulting from oxidation of the Al along the columnar grains of the bond coat, enhances the adherence of AI2O3 layer. Failure of the GTBC finally occurred by cracking at the interface between the bond coat and AI2O3 layer, due to the combined effect of sulfidation of the bond coat and thermal cvcling.

Single electron loss in the collisions of C^(3+) and atomic hydrogen

This paper studies the projectile electron loss cross sections of C^3＋ colliding with atomic hydrogen in the frame work of extended over-barrier model at intermediate velocities （25 keV/u-600 keV/u）. The electron loss is calculated in terms of the interaction between the screened target nucleus and the active projectile electron and of the interaction between projectile electron and target electron. Compared with the convergent close-coupling calculations, screening and anti-screening calculations, this model satisfactorily reproduces the experimentally obtained energy dependence of the electron-impact ionisation cross sections and the single electron loss cross sections over the energy range investigated here.

水液相下羟自由基与谷氨酸分子反应机理的量子化学研究

采用密度泛函理论的M06-2X和MN15方法,结合自洽反应场理论的SMD模型方法,研究了水液相下羟自由基(OH)与谷氨酸分子(Glu)反应的机理。研究发现:Glu的损伤可通过OH抽取其不同位置的H原子、OH加成到羧基和去质子羧基C以及单电子从Glu分子向OH转移3个途径实现。势能面计算表明:OH加成到羧基和去质子羧基C的反应通道最具优势,反应无势垒;OH抽取质子化氨基H、α-H、β-H、γ-H和羧基H的最低能垒分别是28.7、17.6、8.0、18.3和29.0 kJ/mol;电子从Glu分子向OH转移为劣势通道,反应能垒是255.2 kJ/mol。结果表明,水液相下OH加成和抽H均可诱导Glu分子损伤,损伤的Glu绝大多数难以修复,Glu具有清除羟自由基的能力。

Projectile electron loss in collisions of light charged ions with helium

We investigate the single-electron loss processes of light charged ions （Li^1＋,2＋, C^2＋,3＋,5＋, and O^2＋,3＋） in collisions with helium. To better understand the experimental results, we propose a theoretical model to calculate the cross section of projectile electron loss. In this model, an ionization radius of the incident ion was defined under the classical over-barrier model, and we developed ＂strings＂ to explain the processes of projectile electron loss, which is similar with the molecular over-barrier model. Theoretical calculations are in good agreement with the experimental results for the cross section of single-electron loss and the ratio of double-to-single ionization of helium associated with one-electron loss.

Effect of SF6 on Ozone Generation Using Dielectric Barrier Discharge

The influence mechanism of a small amount of SF6 on ozone generation in oxygen or air discharge is investigated.Some results are obtained by probing into the number of the high-energy electrons,which have the sufficiency energy for generating ozone.Introducing a small amount of SF6 into oxygen sharply decreases the number of high-energy electrons,because the electron density decreases sharply while the mean electron energy remains constant due to higher breakdown voltage and lower discharge power,and some high-energy electrons are consumed by the excitation and attachment of SF6.In contrast,when a small amount of SF6 is added into dry air discharge,despite the consumption of the excitation and attachment of SF6,the number of high energy electrons increases sharply,which is attributed to the higher mean electron energy and electron density resulted from higher breakdown voltage and discharge power.When the volume fraction of SF6 increases from 0 to 2.22%,the ozone mass concentration and the ozone yield increase by 45.7% and 29.7%,respectively.Therefore,though the oxygen source should avoid the presence of SF6,adding a small amount of SF6 can improve the ozone mass concentration and the efficiency of ozone generation.

Influence of core property on multi-electron process in slow collisions of isocharged sequence ions with neon

Influence of core property on multi-electron process in the collisions of q = 6-9 and 11 isocharged sequence ions with Ne is investigated in the keV/u region. The cross-section ratios of double-, triple-, quadruple- and total multielectron processes to the single electron capture process as well as the partial ratios of different reaction channels to the relevant multi-electron process are measured by using position-sensitive and time-of-flight techniques. The experimental data are compared with the theoretical predictions including the extended classical over-barrier model, the molecular Columbic barrier model and the semi-empirical scaling law. Results show a core effect on multi-electron process of isocharge ions colliding with Neon, which is consistent with the results of Helium we obtained previously.

水溶剂环境下Eda酮式异构体消除超氧负离子自由基O^(-)_(2)·的反应机理

该文在M06-2X/SMD/6-311+G(d,p)水平上,研究了在水溶剂环境1 atm压力和310.15 K温度下Eda酮式异构体与超氧负离子自由基O^(-)_(2)·的反应机理.研究发现:Eda酮式异构体与O^(-)_(2)·的反应有抽H、加成以及单电子转移3种方式.反应势能面研究表明:抽H反应的自由能垒为38.0~176.1 kJ·mol^(-1),优势通道是O^(-)_(2)·抽取杂环H,反应能垒为38.0~41.0 kJ·mol^(-1).加成反应的自由能垒为84.2~196.6 kJ·mol^(-1),优势通道是O^(-)_(2)·加成到杂环与甲基相连的C原子上,反应能垒为84.2 kJ·mol^(-1).单电子从Eda酮式异构体向O^(-)_(2)·转移的反应的能垒为409.2 kJ·mol^(-1),该反应不能实现.研究结果表明:在水溶剂环境下Eda酮式异构体可通过提供杂环H以及甲基邻位C与自由基加成2种途径消除O^(-)_(2)·.

Formation and Gas Barrier Characteristics of Polysilazane-Derived Silica Coatings Formed by Excimer Light Irradiation on PET Films with Vacuum Evaporated Silica Coatings

The effects of excimer light irradiation on polysilazane coatings formed on PET films with vacuum-evaporated SiO2 coatings and the effects of these coatings on gas barrier characteristics have been investigated. The temperature during light irradiation has a large effect on the coating’s molecular structure and gas barrier characteristics. When irradiation was performed at 100℃, the polysilazane coating transformed into a silica coating, and a compact silica coating at a much lower temperature than with heat treatment alone was produced. Surface irregularities in the vapor-deposited silica coating were smoothed out by the formation of a polysilazane coating, which was transformed into a compact silica coating when irradiated with light, resulting in a significant improvement in the gas barrier characteristics. The water vapor permeability of the thin coating irradiated with excimer light at 100℃ showed only 0.04 g/m2•day (40℃, 90% RH). According to the results of investigation of temperature variation of water-vapor permeability, it is inferred that the developed film has an excellent gas barrier value, namely, 4.90 × 10–4 g/m2•day at 25℃. This gas barrier coated PET film is transparent and flexible, and can be used in the fabrication of flexible electronics. Also, the proposed fabrication method effectively provides a simple low-cost and low-temperature fabrication technique without the need for high vacuum facility.