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Effect of Ion Dynamics on the Evolution of Electron Phase-space Holes
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作者 WANG Peiran LU Quanming +1 位作者 WU Mingyu WANG Shui 《空间科学学报》 CAS CSCD 北大核心 2013年第4期413-417,共5页
The evolution of two-dimensional(2D) electron phase-space holes(electron holes) has been previously investigated with electrostatic Particle-in-Cell(PIC) simulations,which neglect ion dynamics.The electron holes... The evolution of two-dimensional(2D) electron phase-space holes(electron holes) has been previously investigated with electrostatic Particle-in-Cell(PIC) simulations,which neglect ion dynamics.The electron holes are found to be unstable to the transverse instability,and their evolution is determined by the combined action between the transverse instability and the stabilization by the background magnetic field.In this paper,the effect of ion dynamics on the evolution of an electron hole is studied.In weakly magnetized plasma(Ωe<ωpe,whereΩe andωpe are electron gyrofrequency and plasma frequency,respectively),the electron hole is still unstable to the transverse instability. However,it evolves a little faster and is destroyed in a shorter time when ion dynamics is considered. In strongly magnetized plasma(Ωe>ωpe),the electron hole is broken due to the lower hybrid waves, and its evolution is much faster. 展开更多
关键词 Ion dynamics electron holes Transverse instability Magnetized plasma
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Suppression of electron and hole overflow in GaN-based near-ultraviolet laser diodes 被引量:3
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作者 邢瑶 赵德刚 +13 位作者 江德生 李翔 刘宗顺 朱建军 陈平 杨静 刘炜 梁锋 刘双韬 张立群 王文杰 李沫 张源涛 杜国同 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期588-593,共6页
In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron bloc... In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/In_xGa_(1-x )N/GaN multiple-quantumwell(MQW) laser diode(LD), the Al composition of inserted p-type AlxGa_(1-x)N electron blocking layer(EBL) is optimized in an effective way, but which could only partially enhance the performance of LD. Here, due to the relatively shallow GaN/In_(0.04)Ga_(0.96)N/GaN quantum well, the hole leakage to n-type region is considered in the ultraviolet LD. To reduce the hole leakage, a 10-nm n-type Al_xGa_(1-x)N hole blocking layer(HBL) is inserted between n-type waveguide and the first quantum barrier, and the effect of Al composition of Al_xGa_(1-x)N HBL on LD performance is studied. Numerical simulations by the LASTIP reveal that when an appropriate Al composition of Al_xGa_(1-x)N HBL is chosen, both electron leakage and hole leakage can be reduced dramatically, leading to a lower threshold current and higher output power of LD. 展开更多
关键词 GaN-based ultraviolet LD electron and hole leakage
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Electrostatic Structure of the Electron Phase-space Holes Generated by the Electron Two-stream Instability with a Finite Width 被引量:1
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作者 SANG Longlong WU Mingyu LU Quanming 《空间科学学报》 CSCD 北大核心 2017年第5期517-523,共7页
Space satellite observations in an electron phase-space hole(electron hole) have shown that bipolar structures are discovered at the parallel cut of parallel electric field, while unipolar structures spring from the p... Space satellite observations in an electron phase-space hole(electron hole) have shown that bipolar structures are discovered at the parallel cut of parallel electric field, while unipolar structures spring from the parallel cut of perpendicular electric field. Particle-in-cell(PIC) simulations have demonstrated that the electron bi-stream instability induces several electron holes during its nonlinear evolution. However, how the unipolar structure of the parallel cut of the perpendicular electric field formed in these electron holes is still an unsolved problem,especially in a strongly magnetized plasma(Ω_e >ω_(pe), where Ω_e is defined as electron gyrofrequency and ω_(pe) is defined as plasma frequency, respectively). In this paper, with two-dimensional(2D) electrostatic PIC simulations, the evolution of the electron two-stream instability with a finite width in strongly magnetized plasma is investigated. Initially, those conditions lead to monochromatic electrostatic waves, and these waves coalesce with each other during their nonlinear evolution. At last, a solitary electrostatic structure is formed. In such an electron hole, a bipolar structure is formed in the parallel cut. of parallel electric field, while a unipolar structure presents in the parallel cut of perpendicular electric field. 展开更多
关键词 electron phase-space hole Two-stream instability PIC simulation
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Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps
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作者 方忠慧 江小帆 +3 位作者 陈坤基 王越飞 李伟 徐骏 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第1期457-461,共5页
Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals(Si-NCs) embedded in Si Nx floating gate MOS structures. The c... Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method, followed by thermal annealing to form the Si nanocrystals(Si-NCs) embedded in Si Nx floating gate MOS structures. The capacitance–voltage(C–V), current–voltage(I–V), and admittance–voltage(G–V) measurements are used to investigate the charging characteristics. It is found that the maximum flat band voltage shift(△VFB) due to full charged holes(~ 6.2 V) is much larger than that due to full charged electrons(~ 1 V). The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements, respectively. From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface. Combining the results of C–V and G–V measurements, we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism. The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs. 展开更多
关键词 silicon nanocrystals memory different charging of electrons and holes oxide traps admittancevoltage characteristics
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Effects of electron correlation and the Breit interaction on one- and two-electron one-photon transitions in double K hole states of He-like ions(10 ≤ Z ≤ 47) 被引量:1
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作者 Xiaobin Ding Cunqiang Wu +5 位作者 Mingxin Cao Denghong Zhang Mingwu Zhang Yingli Xue Deyang Yu Chenzhong Dong 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第3期148-155,共8页
The x-ray energies and transition rates associated with single and double electron radiative transitions from the double K hole state 2s2p to the 1s2s and 1s^2 configurations of 11 selected He-like ions(10 ≤ Z ≤ 47)... The x-ray energies and transition rates associated with single and double electron radiative transitions from the double K hole state 2s2p to the 1s2s and 1s^2 configurations of 11 selected He-like ions(10 ≤ Z ≤ 47) are calculated using the fully relativistic multi-configuration Dirac–Fock method(MCDF). An appropriate electron correlation model is constructed with the aid of the active space method, which allows the electron correlation effects to be studied efficiently. The contributions of the electron correlation and the Breit interaction to the transition properties are analyzed in detail. It is found that the two-electron one-photon(TEOP) transition is correlation sensitive. The Breit interaction and electron correlation both contribute significantly to the radiative transition properties of the double K hole state of the He-like ions. Good agreement between the present calculation and previous work is achieved. The calculated data will be helpful to future investigations on double K hole decay processes of He-like ions. 展开更多
关键词 electron correlation multi-configuration Dirac–Fock method(MCDF) DOUBLE K hole state two-electron one-photon(TEOP)transition
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A Novel Micro-hole Electrode Used to Investigate Electron Transfer Reactions at ITIES
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作者 Dong Ping ZHAN Bing Liang WU 《Chinese Chemical Letters》 SCIE CAS CSCD 2002年第3期273-276,共4页
A novel micro-hole electrode was fabricated to investigate the electron transfer reaction at the interface between two immiscible electrolyte solutions (ITIES). The electron transfer reaction between ferro/ferricyani... A novel micro-hole electrode was fabricated to investigate the electron transfer reaction at the interface between two immiscible electrolyte solutions (ITIES). The electron transfer reaction between ferro/ferricyanide in aqueous phase (W) and ferrocene in 1, 2-dichloroethane (O) phase was studied as a test experiment. The results showed that the diffusion coefficient obtained from the micro-hole electrode was consistent with that obtained at macro-interface. Due to its simplicity and the very small IR drop it will be a useful tool for the study of ITIES systems. 展开更多
关键词 Micro-hole electrode electron transfer ITIES.
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氧化物中存在O2p空穴的典型实验结果和磁性氧化物的O2p巡游电子模型
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作者 唐贵德 齐伟华 《河北师范大学学报(自然科学版)》 CAS 2024年第1期1-8,共8页
负二价氧离子具有满壳层价电子结构(2s^(2)2p^(6)).负一价氧离子的价电子结构为2s^(2)2p^(5),相当于存在1个O2p空穴.传统的凝聚态物理和材料化学研究中都假设氧化物中的氧离子全部为负二价离子,在迄今为止的绝大多数研究氧化物磁性和电... 负二价氧离子具有满壳层价电子结构(2s^(2)2p^(6)).负一价氧离子的价电子结构为2s^(2)2p^(5),相当于存在1个O2p空穴.传统的凝聚态物理和材料化学研究中都假设氧化物中的氧离子全部为负二价离子,在迄今为止的绝大多数研究氧化物磁性和电输运性质的报道中,采用关于磁有序的超交换和双交换作用模型,都没有考虑O2p空穴的影响.然而,许多价电子状态实验证明,在氧化物中存在不可忽略的O2p空穴,即存在不可忽略的负一价氧离子,其占比可达30%或更多.基于这些实验结果,对传统磁有序模型进行改进,英美学者首先进行了探讨,笔者所在课题组与中国科学院物理研究所磁学国家重点实验室合作进行了系统的研究.介绍了相关的典型实验结果和理论模型. 展开更多
关键词 磁性材料 磁有序模型 O2p空穴 电子能量损失谱 X-射线光电子谱
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量子点发光二极管传输层研究进展
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作者 李晓云 杜晓宇 《传感器与微系统》 CSCD 北大核心 2024年第9期1-5,共5页
量子点发光二极管(QLED)凭借着色纯度好、半最大发射带宽窄、无机成分寿命长、合成工艺简单等优点,在显示和固态照明等领域表现出广泛的应用潜力。近年来,QLED的性能提升迅速,有取代有机发光二极管(OLED)的趋势。QLED的传输层材料的选... 量子点发光二极管(QLED)凭借着色纯度好、半最大发射带宽窄、无机成分寿命长、合成工艺简单等优点,在显示和固态照明等领域表现出广泛的应用潜力。近年来,QLED的性能提升迅速,有取代有机发光二极管(OLED)的趋势。QLED的传输层材料的选择对提高器件的载流子注入起到了至关重要的作用。传输层的化学性质及其界面也会对器件的稳定性和寿命产生影响。本文总结了QLED传输层的研究现状,分析了制约QLED性能的因素,介绍了其性能改进的方向方法,并展望了QLED的未来发展。 展开更多
关键词 量子点发光二极管 电子传输层 空穴传输层
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Ge/Sn合金化对CsPbBr_(3)钙钛矿热载流子弛豫影响的非绝热分子动力学研究 被引量:1
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作者 王斐 杨振清 +2 位作者 夏雨虹 刘畅 林春丹 《物理学报》 SCIE EI CSCD 北大核心 2024年第2期310-316,共7页
铯基全无机钙钛矿CsPbBr_(3)具有良好的热稳定性,在应用中表现出优越的发光特性,是近年来光电领域的明星材料.CsPbBr_(3)界面的光生载流子过程与其光电性能密切相关.本文采用非绝热分子动力学方法结合含时密度泛函理论,对CsPbBr_(3)及... 铯基全无机钙钛矿CsPbBr_(3)具有良好的热稳定性,在应用中表现出优越的发光特性,是近年来光电领域的明星材料.CsPbBr_(3)界面的光生载流子过程与其光电性能密切相关.本文采用非绝热分子动力学方法结合含时密度泛函理论,对CsPbBr_(3)及其合金化结构的激发态动力学过程进行了系统研究.研究结果表明,Sn/Ge合金化能够有效缩短退相干时间,减缓电子-空穴复合.CsPb_(0.75)Ge_(0.25)Br_(3)体系的载流子寿命延长至1.6倍,而CsPb_(0.5)Ge_(0.25)Sn_(0.25)Br_(3)体系的载流子寿命延长为原始体系的4.2倍.证明了B位(钙钛矿结构ABX_(3)中的B位)金属阳离子的双原子合金化对CsPbBr_(3)的非辐射电子-空穴复合具有很强的影响.本研究提供了一种能够有效延长钙钛矿载流子寿命,合理优化太阳能电池性能的合金化方案,为未来钙钛矿太阳能电池材料的设计提供了思路. 展开更多
关键词 CsPbBr_(3) 非绝热分子动力学 合金化 非辐射电子-空穴复合
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三种同分异构的双苯并吩噻嗪材料的合成、理论计算及光物理性质
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作者 王鹤然 陈凯 +5 位作者 伏硕 王晧暄 袁加轩 胡星奕 许文娟 密保秀 《物理化学学报》 SCIE CAS CSCD 北大核心 2024年第1期48-56,共9页
吩噻嗪及其衍生物材料是一类重要的多环芳烃材料,在光电子领域有着广泛的应用。其中,基于苯并噻嗪材料的研究相对较少。在本文中,我们分别在吩噻嗪的1,2-、2,3-和3,4-位引入苯基,制备了三种同分异构的双苯并吩噻嗪化合物D-PTZa、D-PTZb... 吩噻嗪及其衍生物材料是一类重要的多环芳烃材料,在光电子领域有着广泛的应用。其中,基于苯并噻嗪材料的研究相对较少。在本文中,我们分别在吩噻嗪的1,2-、2,3-和3,4-位引入苯基,制备了三种同分异构的双苯并吩噻嗪化合物D-PTZa、D-PTZb和D-PTZc,研究了它们的构效关系,并与双吩噻嗪化合物(D-PTZ)进行了对比。研究发现,D-PTZb和D-PTZc的HOMO和LUMO分布与D-PTZ的类似;对于D-PTZa,其1,2-位引入的苯基与中间的苯环空间张力较大,造成空间结构极度扭曲,性质比较特殊。并苯的引入可以有效增加分子的共轭长度,使得最大吸收波长发生红移;在2,3-位引入苯基可以有效地稳定HOMO能级,使基于π→π*跃迁的能隙稍有增大,呈现蓝光发射,溶液的荧光量子产率为1.7%;而在3,4-位引入苯基使LUMO分布更加趋向于线型,从而使LUMO更加稳定,使基于π→π*跃迁的能隙降低,其最大发射峰位于520 nm处,呈现黄绿光发射,溶液荧光量子产率为13%。此外并入苯环之后,空间张力增大,化合物的分解温度降低。我们的分子设计和结构–性质关系的研究可以为设计新的吩噻嗪材料提供基础指导。 展开更多
关键词 苯并吩噻嗪 有机光电材料 密度泛函理论 空穴-电子分析 前线轨道分布 光物理性质
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Study on Electronic Conductivity of CaO-SiO2-Al2O3-FeOx Slag System 被引量:1
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作者 LU Xiong-gang LI Fu-shen +1 位作者 LI Li-fen CHOU Kou-chih 《Journal of Iron and Steel Research International》 SCIE EI CAS CSCD 2000年第1期9-13,共5页
A study on electronic conductivity of CaO-SiO2-Al2O3-FeOxslag system with Wagner polarization technique was carried out.The experimental data show that electronic conductivity is consisted of free electron conductivit... A study on electronic conductivity of CaO-SiO2-Al2O3-FeOxslag system with Wagner polarization technique was carried out.The experimental data show that electronic conductivity is consisted of free electron conductivity and electron hole conductivity and both are related to the content of Fe3+and Fe2+.Free electron conductivity is decreasing and electron hole conductivity is increasing while Fe3+changes to Fe2+.There is a maximum electronic conductivity at some ratio of ferric ions Fe3+to total ion content.Under the experimental conditions,the electronic conductivity is in the range of 10-4—10-2S/cm. 展开更多
关键词 smelt slag electron hole electronic conductivity
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全无机CsPbBr_(3)钙钛矿太阳能电池中载流子传输材料的研究进展
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作者 赵飞 杨培志 《云南师范大学学报(自然科学版)》 2024年第5期1-5,共5页
在全无机CsPbBr_(3)钙钛矿太阳能电池中,电子和空穴传输材料的引入能有效提高器件光电转化效率,同时电子和空穴传输层的化学性质及其界面也会对电池稳定性产生较大影响.本文总结了电子和空穴传输材料在该类电池中的研究现状和热点,并详... 在全无机CsPbBr_(3)钙钛矿太阳能电池中,电子和空穴传输材料的引入能有效提高器件光电转化效率,同时电子和空穴传输层的化学性质及其界面也会对电池稳定性产生较大影响.本文总结了电子和空穴传输材料在该类电池中的研究现状和热点,并详细地介绍了电子和空穴传输材料在全无机CsPbBr 3钙钛矿太阳能电池中的作用和近来的最新进展. 展开更多
关键词 全无机CsPbBr_(3)太阳能电池 电子传输材料 空穴传输材料 光电转换效率
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铁酸铋基异质结光催化剂降解有机污染物的研究进展
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作者 杨雪 黄瑞 +2 位作者 饶泽平 王振华 蔡苇 《化工新型材料》 CAS CSCD 北大核心 2024年第2期70-76,共7页
铁酸铋(BiFeO_(3))作为一种典型的窄带隙铁电半导体,其自身的退极化场可以抑制光生电子空穴对的复合,已被广泛应用于光催化领域。通过构建异质结,借助界面电场对电子-空穴对进行有效分离是一种提升光催化剂降解性能的重要策略。综述了Bi... 铁酸铋(BiFeO_(3))作为一种典型的窄带隙铁电半导体,其自身的退极化场可以抑制光生电子空穴对的复合,已被广泛应用于光催化领域。通过构建异质结,借助界面电场对电子-空穴对进行有效分离是一种提升光催化剂降解性能的重要策略。综述了BiFeO_(3)基Ⅱ型异质结、Z型异质结、肖特基结和S型异质结光催化剂的构建原理,重点介绍了在BiFeO_(3)基异质结光催化剂在降解有机污染物方面的应用及其光催化反应机制,最后对BiFeO_(3)基异质结光催化剂研究的不足和未来的发展方向进行了展望。 展开更多
关键词 铁酸铋 异质结 光催化 电子-空穴复合率 铁电材料
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石墨烯在钙钛矿太阳能电池电荷传输层中应用进展
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作者 张发荣 曹雅静 +1 位作者 刘怡琳 刘炳光 《盐科学与化工》 CAS 2024年第2期4-9,共6页
结合对石墨烯和钙钛矿太阳能电池材料薄膜制备方面的研究,归纳总结了钙钛矿太阳能电池电荷传输层的作用;介绍了常用电荷传输层材料品种及其不足;综述了石墨烯在太阳能电池电子传输层和空穴传输层中应用进展,以促进石墨烯在钙钛矿太阳能... 结合对石墨烯和钙钛矿太阳能电池材料薄膜制备方面的研究,归纳总结了钙钛矿太阳能电池电荷传输层的作用;介绍了常用电荷传输层材料品种及其不足;综述了石墨烯在太阳能电池电子传输层和空穴传输层中应用进展,以促进石墨烯在钙钛矿太阳能电池中的研究开发。目前,钙钛矿太阳能电池的性能稳定性较差,商业化开发难以启动。文章认为从设计和优化钙钛矿太阳电池电荷传输层复合材料着手,稳定和提高钙钛矿太阳能电池性能,可望取得事半功倍的效果。 展开更多
关键词 石墨烯 钙钛矿 太阳能 电荷传输 空穴传输
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金属矿山硬岩巷道分阶段掏槽爆破数值模拟研究
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作者 何松林 杨仁树 +6 位作者 丁晨曦 王利军 严振湘 陈建华 刘朕 刘森 王学文 《煤炭科学技术》 EI CAS CSCD 北大核心 2024年第S01期37-46,共10页
针对地下金属矿山深部硬岩强度高,掏槽难度大,掘进效率低下的问题,以首钢杏山地下铁矿巷道掘进项目为背景,基于数码电子雷管精准逐孔起爆,提出针对直眼桶形掏槽爆破的掏槽区孔内分段与孔间、孔内延时相结合的分阶段爆破方案。采用数值... 针对地下金属矿山深部硬岩强度高,掏槽难度大,掘进效率低下的问题,以首钢杏山地下铁矿巷道掘进项目为背景,基于数码电子雷管精准逐孔起爆,提出针对直眼桶形掏槽爆破的掏槽区孔内分段与孔间、孔内延时相结合的分阶段爆破方案。采用数值模拟以及现场试验方式,在现场原传统方案的基础上,对掏槽区炮孔进行孔内分段、孔间以及孔内微差起爆的分阶段起爆设置。通过LS-DYNA数值模拟软件建立掏槽区三维模型,设置了原传统方案和3种分阶段方案进行模拟计算,对比分析了原传统爆破方案和分阶段方案在掏槽区的有效应力峰值演化情况。数值模拟结果表明:采用孔间短延时分阶段爆破方案能够改变有效应力峰值波动形态,与原传统方案相比,掏槽区沿炮孔方向岩体的有效应力峰值状态提升40%~57%,炮孔底部0~30 cm半径岩体有效应力峰值状态提升幅度在84%~92%。在数值模拟结果的基础上,开展了现场试验验证,现场试验表明:在矿石点位掘进中,采用孔间短延时微差起爆能够改善碎石挤死的现象,采用孔内短延时微差起爆能够提高抛掷能力,改善上段炮孔爆破后产生碎石的抛掷效果,避免影响后续炮孔爆破,在硬岩爆破中二者结合可以明显改善爆破效果,掏槽进尺提高28%;在岩石点位掘进中,采用孔间短延时,孔内长延时设置能获得良好的掘进效果。 展开更多
关键词 掏槽爆破 孔间延时 孔内延时 分段直眼掏槽 电子雷管
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Electron acceleration by Langmuir turbulence in ionospheric heating
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作者 MoRan Liu Chen Zhou Ting Feng 《Earth and Planetary Physics》 EI CSCD 2022年第6期529-535,共7页
In this study,we investigate the generation of parametric decay instability,Langmuir turbulence formation,and electron acceleration in ionospheric heating via a two-fluid model using the Fokker-Planck equation and Vla... In this study,we investigate the generation of parametric decay instability,Langmuir turbulence formation,and electron acceleration in ionospheric heating via a two-fluid model using the Fokker-Planck equation and Vlasov-Poisson system simulations.The simulation results of both the magnetofluid model and the kinetic model demonstrate the dynamics of electron acceleration.Further,the results of the Vlasov-Poisson simulations suggest the formation of electron holes in phase space at the same spatial scale as the Langmuir wave,which are shown to be related to electron acceleration.In addition,electron acceleration is enhanced through the extension of the wavenumber spectrum caused by strong Langmuir turbulence,leading to more electron holes in phase space. 展开更多
关键词 electron acceleration Langmuir turbulence electron holes parametric decay instability
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A Simple Mechanism for Generating a Geomagnetic Field
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作者 Oleg Vladimirovich Styazhkin 《Open Journal of Applied Sciences》 2024年第9期2580-2591,共12页
On the basis of the ideal gas model, the polarization of charges in the mantle was obtained, a physical and mathematical model was constructed, and estimated calculations of the dipole mode of the Earth’s magnetic fi... On the basis of the ideal gas model, the polarization of charges in the mantle was obtained, a physical and mathematical model was constructed, and estimated calculations of the dipole mode of the Earth’s magnetic field were performed, taking into account the speed of its angular rotation, the parameters of density and temperature, the chemical composition, the ionization potential, the dielectric constant and the percentage of the main chemical compounds of the mantle substance. 展开更多
关键词 Physical Parameters of the Earth’s Mantle Maxwell-Boltzmann Statistics Phonon Gas Thermal Ionization electron-hole Polarization electron-hole Recombination Earth’s Magnetic Field Dipole Mode of the Magnetic Field
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钙钛矿太阳能电池界面缺陷及其抑制方法
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作者 李宏 廖鑫 +1 位作者 侯静 徐众 《人工晶体学报》 北大核心 2024年第1期38-50,共13页
目前,绝大多数高效有机-无机卤化物钙钛矿(OIHP)太阳能电池都是由多晶钙钛矿薄膜构成,这些多晶薄膜表面或晶界往往含有大量的缺陷,将导致光生载流子发生非辐射复合,并诱导OIHP材料分解,从而使器件的光电转换效率(PCE)和稳定性降低。本... 目前,绝大多数高效有机-无机卤化物钙钛矿(OIHP)太阳能电池都是由多晶钙钛矿薄膜构成,这些多晶薄膜表面或晶界往往含有大量的缺陷,将导致光生载流子发生非辐射复合,并诱导OIHP材料分解,从而使器件的光电转换效率(PCE)和稳定性降低。本综述分析了钙钛矿太阳能电池的缺陷类型及缺陷对钙钛矿太阳能电池(PSCs)性能的影响,详细介绍了通过钝化电极与传输层,或传输层与钙钛矿层间的界面缺陷以获得更高效率和高稳定性的钙钛矿太阳能电池方面的研究进展,展望了钝化分子的设计思路及钙钛矿光伏商业化应用所面临的挑战。 展开更多
关键词 钙钛矿太阳能电池 有机-无机卤化物钙钛矿 界面缺陷 缺陷钝化 电子传输层 空穴传输层 光电转换效率
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一款小型高密度互连刚挠结合印制板制作技术研究
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作者 邹金龙 简俊峰 +2 位作者 刘志坚 张帅琦 寻瑞平 《印制电路信息》 2024年第10期32-38,共7页
家用便携式医疗电子设备主要特征是体积小、携带方便、操作智能简单,其使用的印制电路板(PCB)为刚挠结合板(R⁃FPCB)和高密度互连(HDI)板。以一款应用于家用便携式医疗电子设备的10层三阶HDI R-FPCB为例,就此类产品的制作工艺以及技术难... 家用便携式医疗电子设备主要特征是体积小、携带方便、操作智能简单,其使用的印制电路板(PCB)为刚挠结合板(R⁃FPCB)和高密度互连(HDI)板。以一款应用于家用便携式医疗电子设备的10层三阶HDI R-FPCB为例,就此类产品的制作工艺以及技术难点做了详细阐述,希望能够为业界同行提供一定的参考。 展开更多
关键词 高密度互连 刚挠结合印制板 揭盖开窗 激光盲孔 便携式医疗电子设备
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一种基于电子皂膜流量计的标准漏孔自动校准装置
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作者 马镇华 张儒锋 +4 位作者 袁飞华 孙涛 姜徳志 洪浩瀚 林立鹏 《自动化与信息工程》 2024年第3期39-44,共6页
采用程控型高精度电子皂膜流量计SF-1U和程控型高精度压力控制器PPC4,配合软件优化,设计一种标准漏孔自动校准装置。经过多重稳压设计,在-0.1~1.6 MPa的测试压力范围内,波动稳定性不超过1%;在0.1~10mL/min的漏率范围内,重复性不超过0.5... 采用程控型高精度电子皂膜流量计SF-1U和程控型高精度压力控制器PPC4,配合软件优化,设计一种标准漏孔自动校准装置。经过多重稳压设计,在-0.1~1.6 MPa的测试压力范围内,波动稳定性不超过1%;在0.1~10mL/min的漏率范围内,重复性不超过0.5%。此外,该装置在校准完成后可自动处理数据,并生成原始记录,节省人力和时间,降低了校准结果的不确定度。 展开更多
关键词 标准漏孔 自动校准装置 电子皂膜流量计 压力控制器
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