期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Characterization of a nano line width reference material based on metrological scanning electron microscope 被引量:2
1
作者 Fang Wang Yushu Shi +4 位作者 Wei Li Xiao Deng Xinbin Cheng Shu Zhang Xixi Yu 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第5期203-211,共9页
The line width(often synonymously used for critical dimension,CD)is a crucial parameter in integrated circuits.To accurately control CD values in manufacturing,a reasonable CD reference material is required to calibra... The line width(often synonymously used for critical dimension,CD)is a crucial parameter in integrated circuits.To accurately control CD values in manufacturing,a reasonable CD reference material is required to calibrate the corresponding instruments.We develop a new reference material with nominal CDs of 160 nm,80 nm,and 40 nm.The line features are investigated based on the metrological scanning electron microscope which is developed by the National Institute of Metrology(NIM)in China.Also,we propose a new characterization method for the precise measurement of CD values.After filtering and leveling the intensity profiles,the line features are characterized by the combination model of the Gaussian and Lorentz functions.The left and right edges of CD are automatically extracted with the profile decomposition and k-means algorithm.Then the width of the two edges at the half intensity position is regarded as the standard CD value.Finally,the measurement results are evaluated in terms of the sample,instrument,algorithm,and repeatability.The experiments indicate efficiency of the proposed method which can be easily applied in practice to accurately characterize CDs. 展开更多
关键词 critical dimension line width metrological scanning electron microscopy TRACEABILITY
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部