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Determination of Electron Swarm Parameters in Pure CHF_3 and CF_4 by a Time-Resolved Method 被引量:5
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作者 肖登明 邓云坤 《Plasma Science and Technology》 SCIE EI CAS CSCD 2013年第1期25-29,共5页
The density-normalized effective ionization coefficient (α - η)/N (α and η are the ionization and attachment coefficients respectively), the electron drift velocity Ve and density- normalized longitudinal diff... The density-normalized effective ionization coefficient (α - η)/N (α and η are the ionization and attachment coefficients respectively), the electron drift velocity Ve and density- normalized longitudinal diffusion coefficient NDL in trifluoromethane (CHF3) and carbon tetraflu- oride (CF4) were measured using a pulsed Townsend technique over a wide E/N range. From the plots of (α- η)/N, we have derived the limiting field strength, (E/N)nm, which is valid for the analysis of insulation characteristics and applications to power equipment. Comparisons of the electron swarms parameters between CHF3 and CFa have been performed, and the global warming potential (GWP) is also taken into account. 展开更多
关键词 electron swarm parameters CHF3 CF4 pulse Townsend discharge GWP
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Investigation of the performance of CF3I/c-C4F8/N2 and CF3I/c-C4F8/CO2 gas mixtures from electron transport parameters 被引量:5
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作者 Ruishuang ZHONG Su ZHAO +4 位作者 Dengming XIAO Hui WANG Xiuchen JIANG Zhongmin YU Yunkun DENG 《Plasma Science and Technology》 SCIE EI CAS CSCD 2020年第5期44-51,共8页
CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas m... CF3I gas mixtures have attracted considerable attention as potential environmentally-friendly alternatives to SF6 gas,owing to their excellent insulating performance.This paper attempts to study the CF3I ternary gas mixtures with c-C4F8 and buffer gases N2 and CO2 by considering dielectric strength from electron transport parameters based on the Boltzmann method and synergistic effect analysis,compared with SF6 gas mixtures.The results confirm that the critical electric field strength of CF3I/c-C4F8/70%CO2 is greater than that of 30%SF6/70%CO2 when the CF3I content is greater than 17%.Moreover,a higher content of c-C4F8 decreases the sensitivity of gas mixtures to an electric field,and this phenomenon is more obvious in CF3I/c-C4F8/CO2 gas mixtures.The synergistic effects for CF3I/c-C4F8/70%N2 were most obvious when the c-C4F8 content was approximately 20%,and for CF3I/c-C4F8/70%CO2 when the c-C4F8 content was approximately 10%.On the basis of this research,CF3I/c-C4F8/70%N2 shows better insulation performance when the c-C4F8 content is in the15%–20%range.For CF3I/c-C4F8/70%CO2,when the c-C4F8 content is in the 10%–15%range,the gas mixtures have excellent performance.Hence,these gas systems might be used as alternative gas mixtures to SF6 in high-voltage equipment. 展开更多
关键词 CF3I/c-C4F8/N2 gas mixtures CF3I/c-C4F8/CO2 gas mixtures Boltzmann method electron transport parameters synergistic effect
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CHRONOABSORPTOMETRY FOR THE DETERMINATION OF KINETIC PARAMETERS OF ELECTRON TRANSFER REACTIONS USING LONG-OPTICAL-PATH ELECTROCHEMICAL CELL
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作者 Zhang Yu YU Mei QIN Mao Chun JING Department of Chemistry,Qufu Normal University,Qufu Shandong,273165 《Chinese Chemical Letters》 SCIE CAS CSCD 1993年第8期729-732,共4页
A single potential step chronoabsorptometric method for the determination of ki- netic parameters of simple quasi-reversible reactions is described.It is verified by determining the kinetic parameters for the electror... A single potential step chronoabsorptometric method for the determination of ki- netic parameters of simple quasi-reversible reactions is described.It is verified by determining the kinetic parameters for the electroreduction of ferricyanide.A long-optical-path electro- chemical cell with a plug-in electrode is used.The thickness of solution layer is 0.55 mm 展开更多
关键词 CHRONOABSORPTOMETRY FOR THE DETERMINATION OF KINETIC parameterS OF ELECTRON TRANSFER REACTIONS USING LONG-OPTICAL-PATH ELECTROCHEMICAL CELL SCE
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Noise behaviors of a closed-loop micro-electromechanical system capacitive accelerometer 被引量:1
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作者 马铭骏 金仲和 +1 位作者 刘义冬 马铁英 《Journal of Central South University》 SCIE EI CAS CSCD 2015年第12期4634-4644,共11页
The noise of closed loop micro-electromechanical systems(MEMS) capacitive accelerometer is treated as one of the significant performance specifications.Traditional optimization of noise performance often focuses on de... The noise of closed loop micro-electromechanical systems(MEMS) capacitive accelerometer is treated as one of the significant performance specifications.Traditional optimization of noise performance often focuses on designing large capacitive sensitivity accelerometer and applying closed loop structure to shape total noise,but different noise sources in closed loop and their behaviors at low frequencies are seldom carefully studied,especially their behaviors with different electronic parameters.In this work,a thorough noise analysis is established focusing on the four noise sources transfer functions near 0 Hz with simplified electronic parameters in closed loop,and it is found that the total electronic noise equivalent acceleration varies differently at different frequency points,such that the noise spectrum shape at low frequencies can be altered from 1/f noise-like shape to flat spectrum shape.The bias instability changes as a consequence.With appropriate parameters settings,the 670 Hz resonant frequency accelerometer can reach resolution of 2.6 μg/(Hz)1/2 at 2 Hz and 6 μg bias instability,and 1300 Hz accelerometer can achieve 5μg/(Hz)1/2 at 2 Hz and 31 μg bias instability.Both accelerometers have flat spectrum profile from 2 Hz to 15 Hz. 展开更多
关键词 CLOSED-LOOP MEMS accelerometer noise spectrum shape electronic parameters bias instability
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Breakdown Electric Field of Hot 30% CF_3I/CO_2 Mixtures at Temperature of 300–3500 K During Arc Extinction Process 被引量:1
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作者 ZHAO Xiaoling JIAO Juntao XIAO Dengming 《Plasma Science and Technology》 SCIE EI CAS CSCD 2016年第11期1095-1100,共6页
We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field streng... We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field strengths are decided by a balance of electron generation and loss based on chemical reactions estimated by the electron energy distribution function (EEDF), which employs the Boltzmann equation method with two-term expanding approximation in the steady-state Townsend (SST) condition. During the insulation recovery phase, the hot CF3I/CO2 gas mixtures have maximum dielectric strength at a temperature of about 1500 K. At room temperature 300 K, the electric strength after arc extinction (90.3 Td, 1 Td=10-21 V.m2) is only 38% of the original value before arc (234.9 Td). The adverse insulation recovery ability of CF3I/CO2 gas mixtures in arc extinction hinders its application in electric circuit breakers and other switchgears as an arc quenching and insulating medium. 展开更多
关键词 limiting electric field strength electron swarm parameters Boltzmannequation hot CF3I/CO2 gas mixtures
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Differential nonlinear photocarrier radiometry for characterizing ultra-low energy boron implantation in silicon
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作者 Xiao-Ke Lei Bin-Cheng Li +3 位作者 Qi-Ming Sun Jing Wang Chun-Ming Gao Ya-Fei Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2022年第3期575-580,共6页
The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabricati... The measuring of the depth profile and electrical activity of implantation impurity in the top nanometer range of silicon encounters various difficulties and limitations, though it is known to be critical in fabrication of silicon complementary metal–oxide–semiconductor(CMOS) devices. In the present work, SRIM program and photocarrier radiometry(PCR)are employed to monitor the boron implantation in industrial-grade silicon in an ultra-low implantation energy range from 0.5 keV to 5 keV. The differential PCR technique, which is improved by greatly shortening the measurement time through the simplification of reference sample, is used to investigate the effects of implantation energy on the frequency behavior of the PCR signal for ultra-shallow junction. The transport parameters and thickness of shallow junction, extracted via multi-parameter fitting the dependence of differential PCR signal on modulation frequency to the corresponding theoretical model, well explain the energy dependence of PCR signal and further quantitatively characterize the recovery degree of structure damage induced by ion implantation and the electrical activation degree of impurities. The monitoring of nmlevel thickness and electronic properties exhibits high sensitivity and apparent monotonicity over the industrially relevant implantation energy range. The depth profiles of implantation boron in silicon with the typical electrical damage threshold(YED) of 5.3×10^(15)cm^(-3) are evaluated by the SRIM program, and the determined thickness values are consistent well with those extracted by the differential PCR. It is demonstrated that the SRIM and the PCR are both effective tools to characterize ultra-low energy ion implantation in silicon. 展开更多
关键词 ultra-low energy ion implantation differential nonlinear photocarrier radiometry junction depth electronic transport parameters
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Equilibrium electron beam parameters of the High Energy Photon Source 被引量:1
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作者 Haisheng Xu Cai Meng +28 位作者 Yuemei Peng Saike Tian Na Wang Xiaohao Cui Chongchong Du Zhe Duan Yuanyuan Guo Ping He Xiyang Huang Daheng Ji Hongfei Ji Yi Jiao Jingyi Li Nan Li Xiaoyu Li Xiaohan Lu Pengfei Liang Weimin Pan Huamin Qu Bin Wang Jiuqing Wang Yuanyuan Wei Jinyu Wan Gang Xu Fang Yan Chenghui Yu Sen Yue Xiang Zhang Yaliang Zhao 《Radiation Detection Technology and Methods》 CSCD 2023年第2期279-287,共9页
Purpose The physics design of the High Energy Photon Source(HEPS)was finished after many times of iteration.Hereby,the typical equilibrium electron beam parameters corresponding to the proposed two baseline operation ... Purpose The physics design of the High Energy Photon Source(HEPS)was finished after many times of iteration.Hereby,the typical equilibrium electron beam parameters corresponding to the proposed two baseline operation modes in the baseline design of HEPS are presented.Methods To compute the equilibrium parameters of the electron beam,the lattice parameters,RF parameters,and the parameters of the insertion devices(IDs)were determined first.Furthermore,it is more precise to use the full-current electron beam parameters in the estimations of the performance of the synchrotron light.Therefore,not only the single-particle dynamics but also the current-dependent collective effects need to be considered in the computations of the full-current,equilibrium parameters of the electron beam.Both analytic computations and multi-particle tracking simulations were carried out.Results The full-current,equilibrium parameters of the electron beams in the HEPS storage ring are presented in this paper.Moreover,the main beam parameters in the injector(the booster and the LINAC),corresponding to the two baseline operation modes of the storage ring,are also presented.Conclusion The typical electron beam parameters corresponding to the two baseline operation modes are given in detail in this paper. 展开更多
关键词 High Energy Photon Source Electron beam parameters
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Time of the Energy Emission in the Hydrogen Atom and Its Electrodynamical Background
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作者 Stanisław Olszewski 《Journal of Modern Physics》 2016年第13期1725-1737,共13页
The time of the energy emission between two neighbouring electron levels in the hydrogen atom has been calculated first on the basis of the quantum aspects of the Joule-Lenz law, next this time is approached with the ... The time of the energy emission between two neighbouring electron levels in the hydrogen atom has been calculated first on the basis of the quantum aspects of the Joule-Lenz law, next this time is approached with the aid of the electrodynamical parameters characteristic for the electron motion in the atom. Both methods indicate a similar result, namely that the time of emission is close to the time period of the electromagnetic wave produced in course of the emission. As a by-product of calculations, the formula representing the radius of the electron microparticle is obtained from a simple combination of the expressions for the Bohr magnetic moment and a quantum of the magnetic flux. 展开更多
关键词 Energy Emission in the Hydrogen Atom Time of the Electron Transition between Two Quantum Levels Electrodynamical parameters Characteristic for the Electron Transition
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Monte Carlo Simulation of Electron Swarms Parameters in c-C_4F_8/CF_4 Gas Mixtures 被引量:1
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作者 刘雪丽 肖登明 +1 位作者 王延安 张周胜 《Journal of Shanghai Jiaotong university(Science)》 EI 2008年第4期443-447,共5页
The swarm parametes for c-C4F8/CF4 mixtures, including the density-normalized effective ion- ization coefficient, drift velocity and mean energy were calculated using Monte-Carlo method with the null collision techniq... The swarm parametes for c-C4F8/CF4 mixtures, including the density-normalized effective ion- ization coefficient, drift velocity and mean energy were calculated using Monte-Carlo method with the null collision technique. The overall density-reduced electric field strength could be varied between 150 and 500 Td, while the c-C4F8 content in gas mixtures is varied in the range of 0-100%. The value of the density-normalized effective ionization coefficient shows a strong dependence on the c-C4F8 content, becoming more electronegative as the content of c-C4F8 is increased. The drift velocity of c-C4F8/CF4 mixtures is more affected by CF4. The calculated limiting field strength for c-C4F8/CF4 mixtures is higher than that of SF6/CF4. 展开更多
关键词 electron swarm parameters c-C4F8/CF4 gas mixtures Monte-Carlo technique
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What Physics Can We Learn from Integrated Stokes Parameter Measurements Made with Polarized Electrons?
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作者 Timothy J.Gay 《Tsinghua Science and Technology》 SCIE EI CAS 2001年第5期458-468,483,共12页
关键词 What Physics Can We Learn from Integrated Stokes parameter Measurements Made with Polarized Electrons WE
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Performance Enhancement in Dye-Sensitized Solar Cells with Composite Mixtures of TiO_2 Nanoparticles and TiO_2 Nanotubes 被引量:5
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作者 D.Maheswari P.Venkatachalam 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2015年第3期354-361,共8页
In the present investigation,a new composite nanostructured photoanodes were prepared using TiO_2 nanotubes(TNTs) with TiO_2 nanoparticles(TNPs).TNPs were synthesized by sol-gel method,and TNTs were prepared throu... In the present investigation,a new composite nanostructured photoanodes were prepared using TiO_2 nanotubes(TNTs) with TiO_2 nanoparticles(TNPs).TNPs were synthesized by sol-gel method,and TNTs were prepared through alkali hydrothermal method.Dye-sensitized solar cells(DSSCs) were fabricated with different photoanodes comprising of various ratios of TNTs + TNPs,synthetic indigo dye as photosensitizer,PMII(l-propyl-3-methylimidazolium iodide) as ionic liquid electrolyte and cobalt sulfide as counter electrode.The structures and morphologies of TNPs and TNTs were analyzed through X-ray diffractometer,transmission electron microscope and scanning electron microscopes.The results of the investigation showed that the DSSC-4 made with composite photoanode structure(TNTs/TNPs)(90% of TNPs + 10% of TNTs) had improved photocurrent efficiency(2.11%) than pure TNPs(1.00%) and TNT film(0.78%).Electrochemical impedance spectra revealed that the composite TNTs/TNPs film-based DSSCs possessed the lowest charge-transfer resistances and longest electron lifetime.Hence,it could be concluded that the composite TNTs/TNPs photoanode facilitates the charge transport rate and enhances the efficiencies of DSSCs. 展开更多
关键词 TNPs/TNTs composite mixtures Charge recombination Electron transport Photovoltaic parameters EIS analysis
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