Current collectors’ effects on the electrochemical performance of LiNi_(0.6)Co_(0.2)Mn_(0.2)O_(2) suspension electrodes for lithium slurry battery

Take after the advantages of lithium-ion battery (LIB) and redox flow battery (RFB), semi-solid flow battery (SSFB) is a promising electrochemical energy storage device in renewable energy utilization. The flowable slurry electrode realizes decouple of energy and power density, while it also brings about new challenge to SSFBs, electron transport between active material and the out circuit. In this consideration, three types of current collectors (CCs) are applied to study the resistance and electrochemical performances of slurry cathodes within pouch cells for the first time. It proves that the electronic resistance (Re) between slurry electrode and the CC plays a decisive role in SSFB operation, and it is so large when Al foil is adopted that the cell cannot even work. Contact angle between Ketjen black (KB) slurry without active material (AM) and the CC is a preliminarily sign for the Re, the smaller the angle, the lower the resistance, and the better electrochemical performance of the cell.

Preparation of BCEC-Astrocyte Co-culturing Membrane Plate Insert

To prepare a hand-made micropore membrane culture plate insert forco-culture. Methods The plate insert was made using plastic centrifuge tube and micropore membrane.After seeding brain capillary endothelial cells (BCECs) on it (under the effect ofastrocyte-conditioned medium), the plate insert was assessed by analysis of trans-endothelialelectrical resistance (TEER). Results The plate insert has a stability of at least 15 d underculture condition. TEER increased significantly under co-culture condition from (66.1 +- 13.3)Ωcm^2 to (182.2 +- 6.7) Ωcm^2. Conclusion This micropore membrane culture plate insert can beeasily made, on which BCEC culture can be successfully performed. Moreover, it is adjustable andrecyclable. It follows that the plate insert is a useful tool for co-culture and the relatedresearch fields.

Optimization of ohmic contact for InP-based transferred electronic devices

The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.

Study on the influence of fracture lengths and fracture angles on residual oil distribution based on the slab model

After fracturing in the pilot area,channeling occurs at a low fracture angle(15).Based on the resistance-water saturation relationship,three-dimensional physical simulation methods are used in the laboratory to study the effect of different fracture angles and lengths on the residual oil distribution during the displacement process.Meanwhile,recovery percent,displacement efficiency and expanding sweep co-efficient to the improvement of recovery percent are also discussed.The results show that the fracture angle and length are closely related to the oil saturation distribution in these models.As the fracture angle increases,the sweep coefficient decreases(0.2412→0.1463),and the recovery percent also in-creases(46.16→56.88%),but the extent of increase has been reduced(7.96→2.96%).The extension of the fracture length is more prone to have a cross-flow phenomenon;the sweep coefficient is reduced(0.2412→0.1463).Compared to the model with 1/2 oil-water well spacing,the recovery percent is decreased by 14.29%.In different fracture models,the increasable sweep coefficient has a greater impact on oil recovery than the increasable displacement efficiency(71.30→28.70%).

Correlation Between Microstructure and Corrosion Behavior of Two 90Cu10Ni Alloy Tubes

Two kinds of 90Cu10 Ni tubes with different service lives（more than 3 years and only 1 year,respectively）under identical working conditions were studied by an immersion test in a 3.5 wt% NaCl solution and the electron backscattered diffraction（EBSD） technique.The morphology after immersion showed severer corrosion attack at the grain boundaries of the tube with shorter service life compared with the tube with longer service life.The grain boundary characterization distributions（GBCDs） of the two tubes obtained by EBSD revealed more Σ3 boundaries and twins,and larger random boundary meshes in the tube with longer service life.A short immersion test in a modified Livingston＇s solution was conducted to evaluate the tendency to corrosion attack of different types of the grain boundaries.SEM and AFM were used to characterize the corrosion morphologies of the boundaries.A strong correlation between varying depths of corrosion grooves and types of the grain boundaries was obtained.The influence of deviation angle of low Σ boundaries on corrosion resistance of the grain boundaries was also discussed.It is concluded that a special ‘‘grain boundary engineering＇＇（GBE） treatment has been performed on the tube with longer service life.It is proposed that the optimized GBCD is responsible for the better service performance of the tube.

Insights into channel potentials and electron quasi-Fermi potentials for DG tunnel FETs

A detailed investigation carried out, with the help of extensive simulations using the TCAD device simulator Sentaurus, with the aim of achieving an understanding of the effects of variations in gate and drain potentials on the device characteristics of a silicon double-gate tunnel field effect transistor（Si-DG TFET） is reported in this paper. The investigation is mainly aimed at studying electrical properties such as the electric potential, the electron density, and the electron quasi-Fermi potential in a channel. From the simulation results, it is found that the electrical properties in the channel region of the DG TFET are different from those for a DG MOSFET. It is observed that the central channel potential of the DG TFET is not pinned to a fixed potential even after the threshold is passed（as in the case of the DG MOSFET）; instead, it initially increases and later on decreases with increasing gate voltage, and this is also the behavior exhibited by the surface potential of the device. However, the drain current always increases with the applied gate voltage. It is also observed that the electron quasi-Fermi potential（e QFP）decreases as the channel potential starts to decrease, and there are hiphops in the channel e QFP for higher applied drain voltages. The channel regime resistance is also observed for higher gate length, which has a great effect on the I–V characteristics of the DG TFET device. These channel regime electrical properties will be very useful for determining the tunneling current; thus these results may have further uses in developing analytical current models.