In the work, we studied the effect of the plasma of a runaway electron preionized （REP） diffuse discharge （DD） on the composition, structure, and properties of ST3PS steel surface layers. Voltage pulses with an in...In the work, we studied the effect of the plasma of a runaway electron preionized （REP） diffuse discharge （DD） on the composition, structure, and properties of ST3PS steel surface layers. Voltage pulses with an incident wave amplitude of up to 30 kV, FWHM of around 4 ns, and rise time of around 2.5 ns were applied to the gap in an inhomogeneous electric field. The ST3PS steel specimens exposed to this type of discharge revealed changes in their defect subsystem, suggesting that the runaway electron preionized diffuse discharge provides surface hardening of the steel.展开更多
The electron cyclotron emission(ECE)diagnostic system has been developed on the ENN spherical torus(EXL-50).The ECE system is designed to detect radiation emitted by energetic electrons,rather than conventional 1D ele...The electron cyclotron emission(ECE)diagnostic system has been developed on the ENN spherical torus(EXL-50).The ECE system is designed to detect radiation emitted by energetic electrons,rather than conventional 1D electron temperature profile measurement,in the frequency range of 4-40 GHz.The system is composed of five subsystems,each covering a different frequency band,including the C-band(4-8 GHz),X-band(8-12 GHz),Ku-band(12-18 GHz),K-band(18-26.5 GHz)and Kα-band(26.4-40 GHz).The system uses heterodyne detection to analyze the received signals.The K-band and Kα-band subsystems are located horizontally in the equatorial plane of the EXL-50,while the C-band,X-band and Ku-band subsystems are located under the vacuum vessel of the EXL-50.To direct the microwaves from the plasma to the antennas for the horizontal detection subsystems,a quasi-optical system has been developed.For the vertical detection subsystems,the antennas are directly attached to the port located beneath the torus at R=700 mm,which is also the magnetic axis of the torus.The system integration,bench testing and initial experimental results will be thoroughly discussed,providing a comprehensive understanding of the ECE system s performance and capabilities.展开更多
Scanning tunneling microscopy/spectroscopy(STM/STS)at 4.8 K has been used to examine the growth of a double-decker bis(phthalocyaninato)yttrium(YP_(c2))molecule on a reconstructed Au(111)substrate.Local differential c...Scanning tunneling microscopy/spectroscopy(STM/STS)at 4.8 K has been used to examine the growth of a double-decker bis(phthalocyaninato)yttrium(YP_(c2))molecule on a reconstructed Au(111)substrate.Local differential conductance spectra(dI/dV)of a single YPc2 molecule allow the characteristics of the highest occupied molecular orbital(HOMO)and the lowest unoccupied molecular orbital(LUMO)to be identified.Furthermore,lateral distributions of the local density of states(LDOS)have also been obtained by dI/dV mapping and confirmed by first principles simulations.These electronic feature mappings and theoretical calculations provide a basis for understanding the unique STM morphology of YPc2,which is usually imaged as an eight-lobed structure.In addition,we demonstrate that bias-dependent STM morphologies and simultaneous dI/dV maps can provide a way of understanding the stability of two-dimensional YP_(c2) films.展开更多
Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhi...Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.展开更多
Voltage-controlled conductance and switching induced by single molecules or atoms are ideally studied in scanning tunneling microscope （STM） tunnel junctions. While the objects under consideration are mostly used in...Voltage-controlled conductance and switching induced by single molecules or atoms are ideally studied in scanning tunneling microscope （STM） tunnel junctions. While the objects under consideration are mostly used in their original form, little is known of the possibilities of in situ adjustments of their properties. Here, we evidence properties of a tunnel junction made of a Ce atom/cluster built by atomic manipulation on Au（111） at a temperature of 4.6 K in the presence of H2. The conductance through the object is characterized by a switching voltage corresponding to an opening or closing of an inelastic electron tunneling conductance channel at 50 mV for a Ce atom and 140 mV for a Ce cluster and by charging. We demonstrate that the electronic properties of an STM junction can be engineered in a simple way by in situ guiding of the H2 pinning at an atomic cluster.展开更多
文摘In the work, we studied the effect of the plasma of a runaway electron preionized （REP） diffuse discharge （DD） on the composition, structure, and properties of ST3PS steel surface layers. Voltage pulses with an incident wave amplitude of up to 30 kV, FWHM of around 4 ns, and rise time of around 2.5 ns were applied to the gap in an inhomogeneous electric field. The ST3PS steel specimens exposed to this type of discharge revealed changes in their defect subsystem, suggesting that the runaway electron preionized diffuse discharge provides surface hardening of the steel.
基金performed under the auspices of National Natural Science Foundation of China(No.11605244)supported by the High-End Talents Program of Hebei Province,Innovative Approaches towards Development of CarbonFree Clean Fusion Energy(No.2021HBQZYCSB006)。
文摘The electron cyclotron emission(ECE)diagnostic system has been developed on the ENN spherical torus(EXL-50).The ECE system is designed to detect radiation emitted by energetic electrons,rather than conventional 1D electron temperature profile measurement,in the frequency range of 4-40 GHz.The system is composed of five subsystems,each covering a different frequency band,including the C-band(4-8 GHz),X-band(8-12 GHz),Ku-band(12-18 GHz),K-band(18-26.5 GHz)and Kα-band(26.4-40 GHz).The system uses heterodyne detection to analyze the received signals.The K-band and Kα-band subsystems are located horizontally in the equatorial plane of the EXL-50,while the C-band,X-band and Ku-band subsystems are located under the vacuum vessel of the EXL-50.To direct the microwaves from the plasma to the antennas for the horizontal detection subsystems,a quasi-optical system has been developed.For the vertical detection subsystems,the antennas are directly attached to the port located beneath the torus at R=700 mm,which is also the magnetic axis of the torus.The system integration,bench testing and initial experimental results will be thoroughly discussed,providing a comprehensive understanding of the ECE system s performance and capabilities.
基金The first author acknowledges the financial support of JSPS(Japan Society for the Promotion of Science)This work was also supported by an International Colla-borative Research Grant by the National Institute of Information and Communications Technology of Japan.
文摘Scanning tunneling microscopy/spectroscopy(STM/STS)at 4.8 K has been used to examine the growth of a double-decker bis(phthalocyaninato)yttrium(YP_(c2))molecule on a reconstructed Au(111)substrate.Local differential conductance spectra(dI/dV)of a single YPc2 molecule allow the characteristics of the highest occupied molecular orbital(HOMO)and the lowest unoccupied molecular orbital(LUMO)to be identified.Furthermore,lateral distributions of the local density of states(LDOS)have also been obtained by dI/dV mapping and confirmed by first principles simulations.These electronic feature mappings and theoretical calculations provide a basis for understanding the unique STM morphology of YPc2,which is usually imaged as an eight-lobed structure.In addition,we demonstrate that bias-dependent STM morphologies and simultaneous dI/dV maps can provide a way of understanding the stability of two-dimensional YP_(c2) films.
基金Project supported by the National Natural Science Foundation of China (Grant Nos.11874304 and 11574253)。
文摘Growth and electronic properties of ultrathin Ga films on Cd(0001) are investigated by low-temperature scanning tunneling microscopy(STM) and density functional theory(DFT) calculations. It is found that Ga films exhibit the epitaxial growth with the pseudomorphic 1×1 lattice. The Ga islands deposited at 100 K show a ramified shape due to the suppressed edge diffusion and corner crossing. Furthermore, the majority of Ga islands reveal flat tops and a preferred height of three atomic layers, indicating the electronic growth at low temperature. Annealing to room temperature leads to not only the growth mode transition from electronic growth to conventional Stranski–Krastanov growth, but also the shape transition from ramified islands to smooth compact islands. Scanning tunneling spectroscopy(STS) measurements reveal that the Ga monolayer exhibits metallic behavior. DFT calculations indicate that all the interfacial Ga atoms occupy the energetically favorable hcp-hollow sites of the substrate. The charge density difference analysis demonstrates that the charge transfer from the Cd substrate to the Ga atoms is negligible, and there is weak interaction between Ga atoms and the Cd substrate. These results shall shed important light on fabrication of ultrathin Ga films on metal substrates with novel physical properties.
文摘Voltage-controlled conductance and switching induced by single molecules or atoms are ideally studied in scanning tunneling microscope （STM） tunnel junctions. While the objects under consideration are mostly used in their original form, little is known of the possibilities of in situ adjustments of their properties. Here, we evidence properties of a tunnel junction made of a Ce atom/cluster built by atomic manipulation on Au（111） at a temperature of 4.6 K in the presence of H2. The conductance through the object is characterized by a switching voltage corresponding to an opening or closing of an inelastic electron tunneling conductance channel at 50 mV for a Ce atom and 140 mV for a Ce cluster and by charging. We demonstrate that the electronic properties of an STM junction can be engineered in a simple way by in situ guiding of the H2 pinning at an atomic cluster.
