Effect of Chemical Doping on the Electronic Transport Properties of Tailoring Graphene Nanoribbons

The electronic transport properties of a molecular junction based on doping tailoring armchair-type graphene nanoribbons（AGNRs）with different widths are investigated by applying the non-equilibrium Green＇s function formalism combined with first-principles density functional theory.The calculated results show that the width and doping play significant roles in the electronic transport properties of the molecular junction.A higher current can be obtained for the molecular junctions with the tailoring AGNRs with W=11.Furthermore,the current of boron-doped tailoring AGNRs with widths W=7 is nearly four times larger than that of the undoped one,which can be potentially useful for the design of high performance electronic devices.

Effect of Chirality on the Electronic Transport Properties of the Thioxanthene-Based Molecular Switch

Based on the nonequilibrium Green function method and density functional theory calculations, we theoretically investigate the effect of chirality on the electronic transport properties of thioxanthene-based molecular switch. The molecule comprises the switch which can exhibit different chiralities, that is, cis-form and trans-form by ultraviolet or visible irradiation. The results clearly reveal that the switching behaviors can be realized when the molecule converts between cis-form and trans-form. ~urthermore, the on-off ratio can be modulated by the chirality of the carbon nanotube electrodes. The maximum on-off ratio can reach 109 at 0.4 V for the armchair junction, suggesting potential applications of this type of junctions in future design of functional molecular devices.

Electronic transport properties of lead nanowires

Lead nanowire occupies a very important position in an electronic device. In this study, a genetic algorithm（GA）method has been used to simulate the Pb nanowire. The result shows that Pb nanowires are a multishell cylinder. Each shell consists of atomic rows wound up helically side by side. The quantum electron transport properties of these structures are calculated based on the non-equilibrium Green function（NEGF） combined with the density functional theory（DFT）,which indicate that electronic transport ability increases gradually with the atomic number increase. In addition, the thickest nanowire shows excellent electron transport performance. It possesses great transmission at the Fermi level due to the strongest delocalization of the electronic state. The results provide valuable information on the relationship between the transport properties of nanowires and their diameter.

Electronic transport through a periodic array of quantum-dot rings

Using the tight-binding approximation and the transfer matrix method, this paper studies the electronic transport properties through a periodic array of quantum-dot （QD） rings threaded by a magnetic flux. It demonstrates that the even^odd parity of the QD number in a single ring and the number of the QD rings in the array play a crucial role in the electron transmission. For a single QD ring, the resonance and antiresonance transmission depend not only on the applied magnetic flux but also on the difference between the number of QDs on the two arms of the ring. For an array of QD rings, the transmission properties are related not only to the even-odd parity of the number No of QDs in the single ring but also to the even-odd parity of the ring number N in the array. When the incident electron energy is aligned with the site energy, for the array of N rings with No = odd the antiresonance transmission cannot occur but the resonance transmission may occur and the transmission spectrum has N resonance peaks （N - 1 resonance peaks） in a period for N = odd （for N = even）. For the array of N rings with No = even the transmission properties depend on the flux threading the ring and the QD number on one arm of the ring. These results may be helpful in designing QD devices.

Hydration effect on the electronic transport properties of oligomeric phenylene ethynylene molecular junctions

A first-principles computational method based on the hybrid density functional theory is developed to simulate the electronic transport properties of oligomeric phenylene ethynylene molecular junctions with H2O molecules accumulated in the vicinity as recently reported by Na et al. [Nanotechnology 18 424001 （2007）]. The numerical results show that the hydrogen bonds between the oxygen atoms of the oligomeric phenylene ethynylene molecule and H2O molecules result in the localisation of the molecular orbitals and lead to the lower transition peaks. The H2O molecular chains accumulated in the vicinity of the molecular junction can not only change the electronic structure of the molecular junctions, but also open additional electronic transport pathways. The obvious influence of H2O molecules on the electronic structure of the molecular junction and its electronic transport properties is thus demonstrated.

Measurement accuracy analysis of the free carrier absorption determination of the electronic transport properties of silicon wafers

By, introducing the random and systematic errors in simulated data computed from conventional frequency-scan and laterally resolved modulated free carrier absorption theory models, we investigate the relative determination sensitivities of three electronic transport properties, namely, carrier lifetime carrier diffusivity and front surface recombination velocity of silicon wafers determined by frequency-scan and laterally resolved techniques. The phase and amplitude data with random errors as functions of the modulation frequency at zero pump-probe-beam separation or of the two-beam separation at four different modulation frequencies are simultaneously fitted to an appreciated carrier diffusion model to extract three transport parameters. The statistical results and fitted accuracies of the transport parameter determined by both techniques are theoretically analysed. Corresponding experimental results are carried out to compare to the simulated results. The simulated and experimental results show that the determination of the transport properties of silicon wafers by the laterally resolved technique are more accurate, as compared with that by the frequency-scan technique.

Electronic transport properties of single-wall boron nanotubes

Electronic transport properties of single-wall boron nanotube （BNT） with different chiralities, diameters, some of which are encapsulated with silicon, germanium, and boron nanowires are theoretically studied. The results indicate that the zigzag （3,3） BNT has more electronic transmission channels than the armchair （5,0） BNT because of its unique structure distortion. Nanowires encapsulated in the BNT can enhance the conductance of the BNT to some extent by providing a significant electronic transmission channel to the BNT. The effect of the structure of nanowires and the diameter of BNTs on the transport properties has also been discussed. The results of this paper can enrich the knowledge of the electron transport of the BNT and provide theoretical guidance for subsequent experimental study.

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls

Influence of spin–orbit coupling on spin-polarized electronic transport in magnetic semiconductor nanowires with nanosized sharp domain walls is investigated theoretically.It is shown that the Rashba spin–orbit coupling can enhance significantly the spin-flip scattering of charge carriers from a nanosized sharp domain wall whose extension is much smaller than the carrier＇s Fermi wavelength.When there are more than one domain wall presented in a magnetic semiconductor nanowire,not only the spin-flip scattering of charge carriers from the domain walls but the quantum interference of charge carriers in the intermediate domain regions between neighboring domain walls may play important roles on spin-polarized electronic transport,and in such cases the influences of the Rashba spin–orbit coupling will depend sensitively both on the domain walls＇ width and the domain walls＇ separation.

Electronic transport properties of phenylacetylene molecular junctions

Electronic transport properties of a kind of phenylacetylene compound-- （4-mercaptophenyl）-phenylacetylene are calculated by the first-principles method in the framework of density functional theory and the nonequilibrium Green＇s function formalism. The molecular junction shows an obvious rectifying behaviour at a bias voltage larger than 1.0 V. The rectification effect is attributed to the asymmetry of the interface contacts. Moreover, at a bias voltage larger than 2.0 V, which is not referred to in a relevant experiment [Fang L, Park J Y, Ma H, Jen A K Y and Salmeron M 2007 Langmuir 23 11522], we find a negative differential resistance phenomenon. The negative differential resistance effect may originate from the change of the delocalization degree of the molecular orbitals induced by the bias.

Electronic transport for armchair graphene nanoribbons with a potential barrier

This paper studies the electronic transport property through a square potential barrier in armchair-edge graphene nanoribbon （AGNR）. Using the Dirac equation with the continuity condition for wave functions at the interfaces between regions with and without a barrier, we calculate the mode-dependent transmission probability for both semiconducting and metallic AGNRs, respectively. It is shown that, by some numerical examples, the transmission probability is generally an oscillating function of the height and range of the barrier for both types of AGNRs. The main difference between the two types of systems is that the magnitude of oscillation for the semiconducting AGNR is larger than that for the metallic one. This fact implies that the electronic transport property for AGNRs depends sensitively on their widths and edge details due to the Dirac nature of fermions in the system.

Preparation of PSFO and LPSFO nanofibers by electrospinning and their electronic transport and magnetic properties

Pr_(0.5)Sr_(0.5)FeO_(3)(PSFO)and La_(0.25)Pr_(0.25)Sr_(0.5)FeO_(3)(LPSFO)nanofibers are prepared by electrospinning followed by calcination,and their morphologies,microstructures,electronic transports,and magnetic properties are studied systematically.The temperature-dependent resistance curves of PSFO and LPSFO nanofibers are measured in a temperature range from 300 K to 10 K.With the temperature lowering,the resistance increases gradually and then decreases sharply due to the occurrence of ferromagnetic metal phase.The metal-insulator transition temperatures are about 110 K and 180 K for PSFO and LPSFO nanofibers,respectively.The electronic conduction behavior above the transition temperature can be described by one-dimensional Mott’s variable-range hopping(VRH)model.The hysteresis loops and the field-cooled(FC)and zero-field-cooled(ZFC)curves show that both PSFO nanofiber and LPSFO nanofiber exhibit ferromagnetism.Although the doping of La reduces the overall magnetization intensity of the material,it increases the ferromagnetic ratio of the system,which may improve the performance of LPSFO in solid oxide fuel cell.

Electronic Transport Properties of Diblock Co-Oligomer Molecule Devices Sandwiched between Nitrogen Doping Armchair Graphene Nanoribbon Electrodes

We investigate the electronic transport properties of dipyrimidinyl-diphenyl sandwiched between two armchair graphene nanoribbon electrodes using the nonequilibrium Green function formalism combined with a first-principles method based on density functional theory. Among the three models M1–M3, M1 is not doped with a heteroatom. In the left parts of M2 and M3, nitrogen atoms are doped at two edges of the nanoribbon. In the right parts, nitrogen atoms are doped at one center and at the edges of M2 and M3, respectively. Comparisons of M1, M2 and M3 show obvious rectifying characteristics, and the maximum rectification ratios are up to 42.9 in M2. The results show that the rectifying behavior is strongly dependent on the doping position of electrodes. A higher rectification ratio can be found in the dipyrimidinyl-diphenyl molecular device with asymmetric doping of left and right electrodes, which suggests that this system has a broader application in future logic and memory devices.

Electronic Transport Properties of Phenalenyl Molecular Devices via Gated Modulation

By applying nonequilibrium Green’s functions (NEGF) in combination with the density functional theory (DFT), we investigate the electronic transport properties of gated phenalenyl molecular devices with two different contact geometries. The calculated results show that electronic transport properties of the two different devices can be modulated by external transverse gates. When the molecule contacts the Au electrodes through two second-nearest sites, the current-voltage (I-V) characteristic curves are symmetric and suppressed by the gate electrodes. However, a rectifying behavior will occur when the electrodes connect the molecule on both sides, one second-nearest site and one third-nearest site, respectively. Mechanisms for such phenomena are proposed and these findings suggest a new opportunity for developing molecular devices.

The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates

We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma （ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO2 substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon, In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger＇s mechanism. In the high bias regime, the values of a increase draxnatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10^4 Vim. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.

Electronic Transport Properties of Transition-Metal Terminated Trigonal Graphene Nanoribbons

With the non-equilibrium Green’s function method and density functional theory, we have studied the electronic properties of trigonal graphene nanoribbons, with Fe terminal and H terminal, coupled to gold electrodes. Rectification behavior can be observed when the electrode-molecule contact distance is larger than 2.2 &Aring. The electronic transport is greatly improved in case of Fe terminal which is analyzed in terms of transmission spectra and density of states.

Steady-state and transient electronic transport properties of β-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructures:An ensemble Monte Carlo simulation

The steady-state and transient electron transport properties ofβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructures were investigated by Monte Carlo simulation with the classic three-valley model.In particular,the electronic band structures were acquired by first-principles calculations,which could provide precise parameters for calculating the transport properties of the two-dimensional electron gas(2DEG),and the quantization effect was considered in theΓvalley with the five lowest subbands.Wave functions and energy eigenvalues were obtained by iteration of the Schrödinger–Poisson equations to calculate the 2DEG scattering rates with five main scattering mechanisms considered.The simulated low-field electron mobilities agree well with the experimental results,thus confirming the effectiveness of our models.The results show that the room temperature electron mobility of theβ-(Al_(0.188)Ga_(0.812))_(2)O_(3)/Ga_(2)O_(3)heterostructure at 10 k V·cm^(-1)is approximately153.669 cm^(2)·V^(-1)·s^(-1),and polar optical phonon scattering would have a significant impact on the mobility properties at this time.The region of negative differential mobility,overshoot of the transient electron velocity and negative diffusion coefficients are also observed when the electric field increases to the corresponding threshold value or even exceeds it.This work offers significant parameters for theβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructure that may benefit the design of high-performanceβ-(Al_(x)Ga_(1-x))_(2)O_(3)/Ga_(2)O_(3)heterostructure-based devices.

Transport properties of Hall-type quantum states in disordered bismuthene

Bismuthene,an inherently hexagonal structure characterized by a huge bulk gap,offers a versatile platform for investigating the electronic transport of various topological quantum states.Using nonequilibrium Green's function method and Landauer-Büttiker formula,we thoroughly investigate the transport properties of various Hall-type quantum states,including quantum spin Hall(QSH)edge states,quantum valley Hall kink(QVHK)states,and quantum spin-valley Hall kink(QSVHK)states,in the presence of various disorders.Based on the exotic transport features,a spin-valley filter,capable of generating a highly spin-and valley-polarized current,is proposed.The valley index and the spin index of the filtered QSVHK state are determined by the staggered potential and the intrinsic spin-orbit coupling,respectively.The efficiency of the spin-valley filter is supported by the spacial current distribution,the valley-resolved conductance,and the spin-resolved conductance.Compared with a sandwich structure for QSVHK,our proposed spin-valley filter can work with a much smaller size and is more accessible in the experiment.

Electronic transport properties of the armchair silicon carbide nanotube

The electronic transport properties of the armchair silicon carbide nanotube（SiCNT） are investigated by using the combined nonequilibrium Green＇s function method with density functional theory.In the equilibrium transmission spectrum of the nanotube,a transmission valley of about 2.12 eV is discovered around Fermi energy,which means that the nanotube is a wide band gap semiconductor and consistent with results of first principle calculations. More important,negative differential resistance is found in its current voltage characteristic.This phenomenon originates from the variation of density of states caused by applied bias voltage.These investigations are meaningful to modeling and simulation in silicon carbide nanotube electronic devices.

Magnetic and magnetotransport properties of layered TaCoTe_(2) single crystals

We present the synthesis of TaCoTe_(2) single crystals and a systematic investigation of the physical properties of bulk crystals and thin flakes.The crystal shows a semiconducting behavior with temperature decreasing from room temperature and turns to a metallic behavior below 38 K.When the magnetic field is applied,the temperature-dependent resistivity curves show an upturn below 10 K.Furthermore,we find that the TaCoTe_(2) single crystal can be easily exfoliated from the bulk crystal by the micromechanical exfoliation method.Our measurements suggest that the nanoflakes have properties similar to those of the bulk crystal when the thickness is lowered to 18 nm.

Photon-assisted electronic and spin transport through two T-shaped three-quantum-dot molecules embedded in an Aharonov-Bohm interferometer

We investigate the time-modulated electronic and spin transport properties through two T-shaped three-quantum-dot molecules embedded in an Aharonov-Bohm（A-B） interferometer. By using the Keldysh non-equilibrium Green＇s function technique, the photon-assisted spin-dependent average current is analyzed. The T-shaped three-quantum-dot molecule A-B interferometer exhibits excellent controllability in the average current resonance spectra by adjusting the interdot coupling strength, Rashba spin-orbit coupling strength, magnetic flux, and amplitude of the time-dependent external field.Efficient spin filtering and multiple electron-photon pump functions are exploited in the multi-quantum-dot molecule A-B interferometer by a time-modulated external field.