Thin Film Characterization Using Rotating Polarizer Analyzer Ellipsometer with a Speed Ratio 1:3

In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.

All-fiber ellipsometer for nanoscale dielectric coatings

Multiple mode resonance shifts in tilted fiber Bragg gratings(TFBGs)are used to simultaneously measure the thickness and the refractive index of TiO_(2) thin films formed by Atomic Layer Deposition(ALD)on optical fibers.This is achieved by comparing the experimental wavelength shifts of 8 TFBG resonances during the deposition process with simulated shifts from a range of thicknesses(T)and values of the real part of the refractive index(n).The minimization of an error function computed for each(n,T)pair then provides a solution for the thickness and refractive index of the deposited film and,a posteriori,to verify the deposition rate throughout the process from the time evolution of the wavelength shift data.Validations of the results were carried out with a conventional ellipsometer on flat witness samples deposited simultaneously with the fiber and with scanning electron measurements on cut pieces of the fiber itself.The final values obtained by the TFBG(n=2.25,final thickness of 185 nm)were both within 4%of the validation measurements.This approach provides a method to measure the formation of nanoscale dielectric coatings on fibers in situ for applications that require precise thicknesses and refractive indices,such as the optical fiber sensor field.Furthermore,the TFBG can also be used as a process monitor for deposition on other substrates for deposition methods that produce uniform coatings on dissimilar shaped substrates,such as ALD.

Imaging method of single layer graphene on metal substrate based on imaging ellipsometer with large field of view

Single layer lattice graphene deposited on the metal substrate can hardly be imaged by the optical microscope. In this Letter, a large field-of-view imaging ellipsometer is introduced to image single layer graphene which is deposited on a metal substrate. By adjusting the polarizer and the analyzer of imaging ellipsometer, the light reflected from surfaces of either single layer graphene or a Au film substrate can be extinguished, respectively.Thus, single layer graphene can be imaged correspondingly under brightfield or darkfield imaging modes. The method can be applied to imaging large-area graphene on a metal substrate.

Influence of Dust Deposition on the Electrical Parameters of Silicon-Based Solar Panels Installed in Senegal (Dakar Region)

In recent years, photovoltaic (PV) modules are widely used in many applications around the world. However, this renewable energy is plagued by dust, airborne particles, humidity, and high ambient temperatures. This paper studies the effect of dust soiling on silicon-based photovoltaic panel performance in a mini-solar power plant located in Dakar (Senegal, 14°42'N latitude, 17°28'W longitude). Results of the current-voltage (I - V) characteristics of photovoltaic panels tested under real conditions. We modeled a silicon-based PV cell in a dusty environment as a stack of thin layers of dust, glass and silicon. The silicon layer is modeled as a P-N junction. The study performed under standard laboratory conditions with input data of irradiation at 1000 W/m2, cell temperature at 25°C and solar spectrum with Air Mass (AM) at 1.5 for the monocrystalline silicon PV cell (m-Si). The analysis with an ellipsometer of dust samples collected on photovoltaic panels allowed to obtain the refraction indices (real and imaginary) of these particles which will complete the input parameters of the model. Results show that for a photon flux arriving on dust layer of 70 μm (corresponding to dust deposit of 3.3 g/m2) deposited on silicon-based PV cells, short circuit current decreases from 54 mA (for a clean cell) to 26 mA. Also, conversion efficiency decreases by 50% compared to clean cell and the cell fill factor decreases by 76% - 50% compared to reference PV cell.

Error Corrected Sub-Monolayer Ellipsometry for Measurement of Biomolecular Interactions

Already in 1946 Alexandre Rothen from the Rockefeller Institute for Medical Research, New York published the use of ellipsometry for the measurement of antigen-antibody interactions. And he found some effects that could not be explained by the assumption that the interaction of the molecules is only of chemical nature. 55 years later we started research on antibody-antigen interaction and found similar results. To make sure that these measurements are not produced by measurement artifacts, each component of our measurement technique is error analyzed and error corrected if necessary. With such type of error corrected instrumentation we found, that there must be an interaction between antigens and antibodies that is based on longitudinal electromagnetic waves, which are able to work through thin 7 nm membranes. A similar interaction is found for the virus-antigen interaction. Our measurement results are in contrast to the assumption that the antigen-antibody and antigen-virus interaction is only of chemical nature.

Near vacuum-ultraviolet aperiodic oscillation emission of Al N films

An accurate measurement of the refractive index is necessary for the optical design of both deep ultraviolet laser diodes and light-emitting diodes. Generally, the refractive indices along different crystallographic axes of anisotropic thin films are measured using variable angle spectroscopic ellipsometry.However, there are still some limitations concerning this method. Here we proposed a potential method to measure the band edge refractive index of wide bandgap semiconductor. An aperiodic oscillation emission phenomenon due to the Fabry-Perot effect was observed in the fluorescence spectrum of an AlN film with a thickness of 1500 nm. Based on the characteristics of the fluorescence spectrum and the definition of Fabry-Perot effect, we obtained the ordinary refractive index of the AlN thin film near the band edge directly. This refractive index measurement method is a supplement to the variable angle ellipsometry,and it is a more direct and effective method for transferred film and thinner samples to measure the fluorescence spectrum.

Efect of Thermal Annealing on the Physical Properties of Zn_(1-x)Cu_xSe Thin Films Deposited by Close Spaced Sublimation Technique

Thin films of Zn1-xCuxSe （x= 0.00, 0.05, 0.10, 0.15, 0.20） were grown on glass substrates by closed space sublimation technique. The deposited films were annealed at 200 ~C and 400 ~C in air for 1 h. The annealed samples have been investigated through Rutherford backscattering spectroscopy （RBS）, X-ray diffraction （XRD）, spectroscopic ellipsometer, spectrophotometer and Raman spectroscopy. Through RBS, the composition of the films was calculated and compared with the initial concentration. Structural characteriza- tion including crystal structure, crystal orientation, lattice parameter, grain size, strain and dislocation density were carried out using XRD data. From XRD spectra it was revealed that the as-deposited and annealed films were polycrystalline in nature with zinc-blende structure. However, the crystallinity and the grain size were improved with the increase of annealing temperature. According to Raman spectroscopy, it was observed that as deposited and annealed samples have the same characteristic vibrational modes of ZnSe at low and high frequency optical phonon modes while another mode was observed for 400 ℃ annealed samples at 745 cm-1. Spectroscopic ellipsometer has been used to found annealing effect on the optical properties of ZnSe. The band gap energy has been determined using transmission spectra. It was found that the band gap energy of the film increased with the increase of annealing temperature.

Optical performance of ultra-thin silver films under the attenuated total reflection mode

Ultra-thin silver films were deposited by thermal evaporation, and the dielectric functions of samples were simulated using Drude-Lorentz oscillators. When s-polarized incident light from the BK7 glass into thin silver film at 45°angle using attenuated total reflection （ATR） mode, we experimental observed that the reflection reach a minimum of 1.87% at 520 nm for thickness of d--6.3 nm silver film, and it reach a minimum of 10.1% at 500 nm for thickness of d--4.1 nm. Moreover, we simulated the absorption changes with incident angles at 520 nm for both p-polarized （TM wave） and s-polarized （TE wave） light using transfer matrix theory, and calculated the electric field distributions. The absorption as a function of incident angles of TM wave and TE wave showed different characteristics under ATR mode, TE wave reached the maximum absorption around the critical angle θc-41.1°, while TM wave reached the minimum absorption.