This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage eliminat...This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.展开更多
基金Project supported by the National High Technology Research and Development Program of China(No.2008AA031403)the National Basic Research Program of China(No.2010CB934204)the National Science Fund for Distinguished Young Scholars of China (No.60825403)
文摘This paper presents a sense amplifier scheme for low-voltage embedded flash （eFlash） memory applications. The topology of the sense amplifier is based on current mode comparison. Moreover, an offset-voltage elimination technique is employed to improve the sensing performance under a small memory cell current. The proposed sense amplifier is designed based on a GSMC 130 nm eFlash process, and the sense time is 0.43 ns at 1.5 V, corresponding to a 46% improvement over the conventional technologies.
