Radioactive wastes arising from a wide range of human activities are in many different physical and chemical forms, contaminated with varying radioactivity. Their common features are the potential hazard associated wi...Radioactive wastes arising from a wide range of human activities are in many different physical and chemical forms, contaminated with varying radioactivity. Their common features are the potential hazard associated with their radioactivity and the need to manage them in such a way as to protect the human environment. The geological disposal is regarded as the most reasonable and effective way to safely disposing high-level radioactive wastes in the world. The conceptual model of geological disposal in China is based on a multi-barrier system that combines an isolating geological environment with an engineered barrier system. The buffer is one of the main engineered barriers for HLW repository. It is expected to maintain its low water permeability, self-sealing property, radio nuclides adsorption and retardation properties, thermal conductivity, chemical buffering property, canister supporting property, and stress buffering property over a long period of time. Bentonite is selected as the main content of buffer material that can satisfy the above requirements. The Gaomiaozi deposit is selected as the candidate supplier for China＇s buffer material of high level radioactive waste repository. This paper presents the geological features of the GMZ deposit and basic properties of the GMZ Na-bentonite. It is a super-large deposit with a high content of montmorillonite （about 75 %）, and GMZ-1, which is Na-bentonite produced from GMZ deposit is selected as the reference material for China＇s buffer material study.展开更多
Within the multi-barrier system for high-level waste disposal,the technological gap formed by combined buffer material block becomes the weak part of buffer layer.In this paper,Gaomiaozi bentonite buffer material with...Within the multi-barrier system for high-level waste disposal,the technological gap formed by combined buffer material block becomes the weak part of buffer layer.In this paper,Gaomiaozi bentonite buffer material with technological gap was studied,the heat transfer induced by liquid water flow and water vapor was embedded into the energy conservation equation.Based on the Barcelona basic model,the coupled thermo-hydro-mechanical model of unsaturated bentonite was established by analyzing the swelling process of bentonite block and the compression process of joint material.The China-Mock-up test was adopted to compare the numerical calculation results with the test results so as to verify the rationality of the proposed model.On this basis,the effect of joint self-healing on dry density,thermal conductivity and permeability coefficient of buffer material was further analyzed.The results show that,with bentonite hydrating and swelling,the joint material gradually increases in dry density,and exhibits comparatively uniform hydraulic and thermal conductivity properties as compacted bentonite block.As a result,the buffer material gradually shifts to homogenization due to the coordinated deformation.展开更多
AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·...AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.展开更多
The thermal property is one of the key properties for the design of the high-level radioactive waste (HLW) repository. In this study, the thermal properties transient automatic tester (HPP-F) is uesd to study the ther...The thermal property is one of the key properties for the design of the high-level radioactive waste (HLW) repository. In this study, the thermal properties transient automatic tester (HPP-F) is uesd to study the thermal conductivity of multiphase composite buffer/backfill material including the type B-Z and B-Z-P (Here B、Z、P represents bentonite、zeolite and pyrite respectively,the same as in the following.) in different dry density and moisture conditions. The results show that for the same moisture content (dry density), thermal conductivity of specimens increases as the dry density (moisture content) increases. As a result, the type B-Z-P which is highly compacted of 1.8 g/cm3 in dry density and 17.65% in moisture content performs well, it meets the requirements of the IAEA and is easy to be compacted ,so it can be recommend as a alternative material of high level radioactive waste disposal repository buffer/backfilling materials.展开更多
NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. I...NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. It is found that the texture of NiO could be affected directly by the orientation and surface of substrate. X-ray diffraction （XRD） 2-2θ scan, φ-scan, and pole figure were employed to characterize the in-plane alignment and cube texture. X-ray φ-scan shows that NiO film is formed on Ni tape with high cube texture and a typical value at the full width at half maximum （FWHM） is ≤ 7.5°. Scanning electron microscopy was used to study the surface morphology of NiO films. No crack is found and the films appear dense. Such technique is simple and of low cost with perfect reproducibility, promising for developing long tapes.展开更多
A novel double buffer of Eu2CuO4 (ECO)/YSZ (yttrium-stabilized zirconia) was developed for growing YBa2Cu3Oy (YBCO) thin films on Si substrates. In these films, the severe reaction between Si and YBCO is blocked by th...A novel double buffer of Eu2CuO4 (ECO)/YSZ (yttrium-stabilized zirconia) was developed for growing YBa2Cu3Oy (YBCO) thin films on Si substrates. In these films, the severe reaction between Si and YBCO is blocked by the first YSZ layer, whereas, the degradation of crystallinity and superconductivity in the grown YBCO is greatly improved by the second ECO layer. Such an ECO material possesses a very stable 214-T’ structure and excellent compatibilities with YBCO and YSZ. The result shows that the epitaxy and crystallinity of YBCO deposited on Si could be considerably enhanced by using the ECO/YSZ double buffer. The grown films are characterized by high-resolution X-ray diffraction, grazing incidence X-ray reflection, and transmission electron microscopy (TEM), respectively. It is found that well defined interfaces are formed at YBCO/ECO/YSZ boundaries. No immediate layer could be seen. The defect density in all grown layers is kept at a lower level. The YBCO film surface turns out to be very smooth. These films have full superconducting transitions above 88 K and high current carrying capacity at 77 K. The successful growth of highly epitaxial YBCO thin films on silicon with ECO/YSZ buffer, demonstrate the advantages of such a double buffer structure.展开更多
文摘Radioactive wastes arising from a wide range of human activities are in many different physical and chemical forms, contaminated with varying radioactivity. Their common features are the potential hazard associated with their radioactivity and the need to manage them in such a way as to protect the human environment. The geological disposal is regarded as the most reasonable and effective way to safely disposing high-level radioactive wastes in the world. The conceptual model of geological disposal in China is based on a multi-barrier system that combines an isolating geological environment with an engineered barrier system. The buffer is one of the main engineered barriers for HLW repository. It is expected to maintain its low water permeability, self-sealing property, radio nuclides adsorption and retardation properties, thermal conductivity, chemical buffering property, canister supporting property, and stress buffering property over a long period of time. Bentonite is selected as the main content of buffer material that can satisfy the above requirements. The Gaomiaozi deposit is selected as the candidate supplier for China＇s buffer material of high level radioactive waste repository. This paper presents the geological features of the GMZ deposit and basic properties of the GMZ Na-bentonite. It is a super-large deposit with a high content of montmorillonite （about 75 %）, and GMZ-1, which is Na-bentonite produced from GMZ deposit is selected as the reference material for China＇s buffer material study.
基金Projects(52078031,U 2034204)supported by the National Natural Science Foundation of China。
文摘Within the multi-barrier system for high-level waste disposal,the technological gap formed by combined buffer material block becomes the weak part of buffer layer.In this paper,Gaomiaozi bentonite buffer material with technological gap was studied,the heat transfer induced by liquid water flow and water vapor was embedded into the energy conservation equation.Based on the Barcelona basic model,the coupled thermo-hydro-mechanical model of unsaturated bentonite was established by analyzing the swelling process of bentonite block and the compression process of joint material.The China-Mock-up test was adopted to compare the numerical calculation results with the test results so as to verify the rationality of the proposed model.On this basis,the effect of joint self-healing on dry density,thermal conductivity and permeability coefficient of buffer material was further analyzed.The results show that,with bentonite hydrating and swelling,the joint material gradually increases in dry density,and exhibits comparatively uniform hydraulic and thermal conductivity properties as compacted bentonite block.As a result,the buffer material gradually shifts to homogenization due to the coordinated deformation.
基金Supported by the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002the National Basic Research Program of Chinathe National Science and Technology Major Project of China
文摘AlGaN/GaN high electron mobility transistors （HEMTs） grown on Fe-modulation-doped （MD） and unintentionally doped （UID） GaN buffer layers are investigated and compared. Highly resistive GaN buffers （10^9Ω·cm） are induced by individual mechanisms for the electron traps＇ formation： the Fe MD buffer （sample A） and the UID buffer with high density of edge-type dislocations （7.24×10^9cm^-2, sample B）. The 300K Hall test indicates that the mobility of sample A with Fe doping （2503cm^2V^-1s^-1） is much higher than sample B （1926cm^2V^-1s^-1） due to the decreased scattering effect on the two-dimensional electron gas. HEMT devices are fabricated on the two samples and pulsed I–V measurements are conducted. Device A shows better gate pinch-off characteristics and a higher threshold voltage （-2.63V） compared with device B （-3.71V）. Lower gate leakage current ｜IGS｜ of device A （3.32×10^-7A） is present compared with that of device B （8.29×10^-7A）. When the off-state quiescent points Q_2 （V GQ2=-8V, V DQ2=0V） are on, V th hardly shifts for device A while device B shows ＋0.21V positive threshold voltage shift, resulting from the existence of electron traps associated with the dislocations in the UID-GaN buffer layer under the gate. Under pulsed I–V and transconductance G m–V GS measurement, the device with the Fe MD-doped buffer shows more potential in improving reliability upon off-state stress.
文摘The thermal property is one of the key properties for the design of the high-level radioactive waste (HLW) repository. In this study, the thermal properties transient automatic tester (HPP-F) is uesd to study the thermal conductivity of multiphase composite buffer/backfill material including the type B-Z and B-Z-P (Here B、Z、P represents bentonite、zeolite and pyrite respectively,the same as in the following.) in different dry density and moisture conditions. The results show that for the same moisture content (dry density), thermal conductivity of specimens increases as the dry density (moisture content) increases. As a result, the type B-Z-P which is highly compacted of 1.8 g/cm3 in dry density and 17.65% in moisture content performs well, it meets the requirements of the IAEA and is easy to be compacted ,so it can be recommend as a alternative material of high level radioactive waste disposal repository buffer/backfilling materials.
基金Project supported by National 863 Programof Ministry of Science and Technology of China (2002AA306211 ,2004AA306130)
文摘NiO buffer layers were formed on a tape of Ni for making YBCO coated conductor by surface-oxidation epitaxy （SOE） process. Different oxidizing conditions such as temperature and duration were studied for Ni tapes. It is found that the texture of NiO could be affected directly by the orientation and surface of substrate. X-ray diffraction （XRD） 2-2θ scan, φ-scan, and pole figure were employed to characterize the in-plane alignment and cube texture. X-ray φ-scan shows that NiO film is formed on Ni tape with high cube texture and a typical value at the full width at half maximum （FWHM） is ≤ 7.5°. Scanning electron microscopy was used to study the surface morphology of NiO films. No crack is found and the films appear dense. Such technique is simple and of low cost with perfect reproducibility, promising for developing long tapes.
基金Project (HKU7104/02P) supported by Research Grants Council (RGC) of Hong Kong
文摘A novel double buffer of Eu2CuO4 (ECO)/YSZ (yttrium-stabilized zirconia) was developed for growing YBa2Cu3Oy (YBCO) thin films on Si substrates. In these films, the severe reaction between Si and YBCO is blocked by the first YSZ layer, whereas, the degradation of crystallinity and superconductivity in the grown YBCO is greatly improved by the second ECO layer. Such an ECO material possesses a very stable 214-T’ structure and excellent compatibilities with YBCO and YSZ. The result shows that the epitaxy and crystallinity of YBCO deposited on Si could be considerably enhanced by using the ECO/YSZ double buffer. The grown films are characterized by high-resolution X-ray diffraction, grazing incidence X-ray reflection, and transmission electron microscopy (TEM), respectively. It is found that well defined interfaces are formed at YBCO/ECO/YSZ boundaries. No immediate layer could be seen. The defect density in all grown layers is kept at a lower level. The YBCO film surface turns out to be very smooth. These films have full superconducting transitions above 88 K and high current carrying capacity at 77 K. The successful growth of highly epitaxial YBCO thin films on silicon with ECO/YSZ buffer, demonstrate the advantages of such a double buffer structure.
