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A Super-Low-Noise,High-Gain MMIC LNA
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作者 黄华 张海英 +3 位作者 杨浩 尹军舰 朱旻 叶甜春 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第12期2080-2084,共5页
A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit... A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit size, and shows a 5012 noise figure less than 0.9dB, gain greater than 26dB, and return loss less than - 10dB in the S-C band range of 3.5 to 4. 3GHz. The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range. It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain. 展开更多
关键词 low noise amplifier enhancement phemt MMIC
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