The voltage-current relationship and equivalent circuit implementation of parallel flux-controlled memristive circuits

A flux-controlled memristor characterized by smooth cubic nonlinearity is taken as an example, upon which the voltage-current relationships （VCRs） between two parallel memristive circuits - a parallel memristor and capacitor circuit （the parallel MC circuit）, and a parallel memristor and inductor circuit （the parallel ML circuit） - are investigated. The results indicate that the VCR between these two parallel memristive circuits is closely related to the circuit parameters, and the frequency and amplitude of the sinusoidal voltage stimulus. An equivalent circuit model of the memristor is built, upon which the circuit simulations and exper/mental measurements of both the parallel MC circuit and the parallel ML circuit are performed, and the results verify the theoretical analysis results.

The circuitry landscape of perovskite solar cells:An in-depth analysis

The extensive research and development in perovskite solar cells (PSCs) have rekindled the hopes of converting solar energy into electricity.An elusive understanding of underlying mechanisms is required for the development of efficient PSCs.Over the years,Impedance Spectroscopy (IS) characterization,along with complementary techniques,has proven to be an effective way to understand and analyze the charge transport and recombination at interface and bulk of PSCs.The IS of PSCs have been analyzed,interpreted,and improvised continuously,revealing intricate details about the work.However,there is a lack of centralized source of these details,which make it tougher to account for the generalized approach to understand the device properties.The present work is focused on compiling the research done on various PSC device architectures via IS to construct a comprehensive foundation of information on impedance plots,equivalent circuits,and associated processes.

Effect of gas bubble on cell voltage oscillations based on equivalent circuit simulation in aluminum electrolysis cell

A method to investigate the effect of gas bubble on cell voltage oscillations was established. The whole aluminum electrolysis cell was treated as a resistance circuit, and the dynamic simulation of the cell equivalent circuit was modeled with Matlab/Simulink simulation software. The time-series signals of cell voltage and anode current were obtained under different bubble conditions, and analyzed by spectral and statistical analysis methods. The simulation results show that higher bubble release frequency has a significant effect on the cell voltage oscillations. When the bubble coverage of one anode block exceeds 80%, the cell voltage may exceed its normal fluctuation amplitude. The simulation also proves that the anode effect detected by computer in actual production is mainly the whole cell anode effect.

The initial stages of Li_(2)O_(2) formation during oxygen reduction reaction in Li-O_(2) batteries:The significance of Li_(2)O_(2) in charge-transfer reactions within devices

Lithium-oxygen batteries are a promising technology because they can greatly surpass the energy density of lithium-ion batteries.However,this theoretical characteristic has not yet been converted into a real device with high cyclability.Problems with air contamination,metallic lithium reactivity,and complex discharge and charge reactions are the main issues for this technology.A fast and reversible oxygen reduction reaction(ORR)is crucial for good performance of secondary batteries',but the partial knowledge of its mechanisms,especially when devices are concerned,hinders further development.From this perspective,the present work uses operando Raman experiments and electrochemical impedance spectroscopy(EIS)to assess the first stages of the discharge processes in porous carbon electrodes,following their changes cycle by cycle at initial operation.A growth kinetic formation of the discharge product signal(Li_(2)O_(2))was observed with operando Raman,indicating a first-order reaction and enabling an analysis by a microkinetic model.The solution mechanism in the evaluated system was ascribed for an equivalent circuit with three time constants.While the time constant for the anode interface reveals to remain relatively constant after the first discharge,its surface seemed to be more non-uniform.The model indicated that the reaction occurs at the Li_(2)O_(2) surface,decreasing the associated resistance during the initial discharge phase.Furthermore,the growth of Li_(2)O_(2) forms a hetero-phase between Li_(2)O_(2)/electrolyte,while creating a more compact and homogeneous on the Li_(2)O_(2)/cathode surface.The methodology here described thus offers a way of directly probing changes in surface chemistry evolution during cycling from a device through EIS analysis.

Equivalent Circuit Analysis of an RF Integrated Inductor with Ferrite Thin-Film

An equivalent circuit for a novel RF integrated inductor with ferrite thin-film is derived. The enhancement of the magnetic ferrite thin-film on the inductance （L） and quality factor （Q） of the inductor is analyzed. Circuit element parameters are extracted from RF measurements. Compared with the reference air-core inductor without magnetic film, L and Q of the ferrite thin-film inductor are 17% and 40% higher at 2GHz,respectively. Both the equivalent circuit analysis and test results demonstrate significant enhancement of the performance of RF integration inductors by ferrite thin-film integration.

Small-Signal Equivalent Circuit Modeling of a Photodetector Chip

A small-signal equivalent circuit model and the ted. The equivalent lumped circuit, which takes the main extraction techniques for photodetector chips are presen- factors that limit a photodetector＇s RF performance into consideration,is first determined based on the device＇s physical structure. The photodetector＇s S parameters are then on-wafer measured, and the measured raw data are processed with further calibration. A genetic algorithm is used to fit the measured data, thereby allowing us to calculate each parameter value of the model. Experimental resuits show that the modeled parameters are well matched to the measurements in a frequency range from 130MHz to 20GHz, and the proposed method is proved feasible. This model can give an exact description of the photodetector chip＇s high frequency performance,which enables an effective circuit-level prediction for photodetector and optoelectronic integrated circuits.

A compact X-band backward traveling-wave accelerating structure

Very high-energy electrons(VHEEs)are potential candidates for FLASH radiotherapy for deep-seated tumors.We proposed a compact VHEE facility based on an X-band high-gradient high-power technique.In this study,we investigated and realized the first X-band backward traveling-wave(BTW)accelerating structure as the buncher for a VHEE facility.A method for calculating the parameters of single cell from the field distribution was introduced to simplify the design of the BTW structure.Time-domain circuit equations were applied to calculate the transient beam parameters of the buncher in the unsteady state.A prototype of the BTW structure with a thermionic cathode-diode electron gun was designed,fabricated,and tested at high power at the Tsinghua X-band high-power test stand.The structure successfully operated with 5-MW microwave pulses from the pulse compressor and outputted electron bunches with an energy of 8 MeV and a pulsed current of 108 mA.

Abstraction of Small Signal Equivalent Circuit Parameters of Enhancement-Mode InGaP/AlGaAs/InGaAs PHEMT

An extraction method of the component parameter values of an enhancement-mode InGaP/AIGaAs/In-GaAs PHEMT small signal equivalent circuit is presented,and these component parameter values are extracted by using the EEHEMT1 model of IC-CAP software. The extraction results are verified by ADS software,and the DC I-V curves and S parameters simulated by ADS are basically accordant with those of the test results. These results indicate that the EEHEMT1 model can be used for extracting the component parameters of an enhancement-mode PHEMT.

THE EQUIVALENT CIRCUIT AND CONTROL SYSTEM OF TRAVELLING WAVE TYPE ULTRASONIC MOTOR

The ultrasonic motor is a sort of new type of micromotor with special structure. By use of piezoelectric converse effect of ceramics, the electrical energy is transformed into mechanical energy. Its operating principle is quite different from that of the traditional motors. In this paper the equivalent circuits of the ring stator and even the whole motor are proposed after studying the equivalent circuit of piezoelectric vibrator. Then the paper makes detailed analyses of each part of the control system, which has been simplified by the equivalent circuit. The theory in this paper has been proved through experiments.

Electrode Location Efficiency and Equivalent Circuit for Flexure Vibration of Piezoelectric Beam

Aim To provide technical parameters for development of quartz gyro. Methods Theory of elastic beam was applied to piezoelectric beam. Based on the concept of equivalent volume force and energy conservation, the formula of electrode location efficiency was derived. And the electric system was compared with the dynamic one according to the principle of equivalent circuit for piezoelectric crystal, and the general formulae of the parameters for the equivalent circuit, R n L n C n , were derived. Results and Conclusion Optimum electrode location is chosen, and the derived equivalent circuit parameters are the theoretical base of the circuit design for quartz gyro.

A Frequency-Independent Equivalent Circuit for High-k Stacked Monolithic Transformers

A new 2-Π lumped element equivalent circuit model for high-k stacked on-chip transformers is proposed. The model parameters are extracted with high precision, mainly based on analytical methods. The developed model enables fast and accurate time domain transient analysis and noise analysis in RFIC simulation since all elements in the model are fre- quency independent. The validity of the proposed model has been demonstrated by a fabricated monolithic stacked trans- former in TSMC＇s 0.13μm mixed-signal （MS）/RF CMOS＇ process.

Design and Realization of CPW Circuits Using EC-ANN Models for CPW Discontinuities

Novel accurate and efficient equivalent circuit trained artificial neural-network （EC-ANN） models,which inherit and improve upon EC model and EM-ANN models＇ advantages,are developed for coplanar waveguide （CPW） discontinuities. Modeled discontinuities include ： CPW step, interdigital capacitor, symmetric cross junction, and spiral inductor, for which validation tests are performed. These models allow for circuit design, simulation, and optimization within a CAD simulator. Design and realization of a coplanar lumped element band pass filter on GaAs using the developed CPW EC-ANN models are demonstrated.

Lumped Equivalent Circuit of Planar Spiral Inductor for CMOS RFIC Application

A lumped π-type equivalent circuit of planar spiral inductor for CMOS RFIC application is developed by the domain decomposition method for conformal modules （DDM-CM）. Closed form expressions of lumped parameters for a square spiral inductor on a Si-SiO2 substrate are obtained and verified with the previously published experimental results.

Chaotic memristive circuit:equivalent circuit realization and dynamical analysis

In this paper, a practical equivalent circuit of an active flux-controlled memristor characterized by smooth piecewise-quadratic nonlinearity is designed and an experimental chaotic memristive circuit is implemented. The chaotic memristive circuit has an equilibrium set and its stability is dependent on the initial state of the memristor. The initial state-dependent and the circuit parameter-dependent dynamics of the chaotic memristive circuit are investigated via phase portraits, bifurcation diagrams and Lyapunov exponents. Both experimental and simulation results validate the proposed equivalent circuit realization of the active flux-controlled memristor.

Simulation of second-order RC equivalent circuit model of lithium battery based on variable resistance and capacitance

With the rise of the electric vehicle industry,as the power source of electric vehicles,lithium battery has become a research hotspot.The state of charge(SOC)estimation and modelling of lithium battery are studied in this paper.The ampere-hour(Ah)integration method based on external characteristics is analyzed,and the open-circuit voltage(OCV)method is studied.The two methods are combined to estimate SOC.Considering the accuracy and complexity of the model,the second-order RC equivalent circuit model of lithium battery is selected.Pulse discharge and exponential fitting of lithium battery are used to obtain corresponding parameters.The simulation is carried out by using fixed resistance capacitance and variable resistance capacitor respectively.The accuracy of variable resistance and capacitance model is 2.9%,which verifies the validity of the proposed model.

Analysis of each branch current of serial solar cells by using an equivalent circuit model

In this paper, based on the equivalent single diode circuit model of the solar cell, an equivalent circuit diagram for two serial solar cells is drawn. Its equations of current and voltage are derived from Kirchhoff＇s current and voltage law. First, parameters are obtained from the I-V （current-voltage） curves for typical monocrystalline silicon solar cells （125 mmx 125 mm）. Then, by regarding photo-generated current, shunt resistance, serial resistance of the first solar cell, and resistance load as the variables. The properties of shunt currents （Ishl and Ish2）, diode currents （/D1 and/]：）2）, and load current （IL） for the whole two serial solar cells are numerically analyzed in these four cases for the first time, and the corresponding physical explanations are made. We find that these parameters have different influences on the internal currents of solar cells. Our results will provide a reference for developing higher efficiency solar cell module and contribute to the better understanding of the reason of efficiency loss of solar cell module.

Equivalent circuit with complex physical constants and equivalent-parameters-expressed dissipation factors of piezoelectric materials

The equivalent circuit with complex physical constants for a piezoelectric ceramic in thickness mode is established. In the equivalent circuit, electric components （equivalent circuit parameters） are connected to real and imaginary parts of complex physical coefficients of piezoelectric materials. Based on definitions of dissipation factors, three of them （dielectric, elastic and piezoelectric dissipation factors） are represented by equivalent circuit parameters. Since the equivalent circuit parameters are detectable, the dissipation factors can be easily obtained. In the experiments, the temperature and the stress responses of the three dissipation factors are measured.

Threshold flux-controlled memristor model and its equivalent circuit implementation

Modeling a memristor is an effective way to explore the memristor properties due to the fact that the memristor devices are still not commercially available for common researchers. In this paper, a physical memristive device is assumed to exist whose ionic drift direction is perpendicular to the direction of the applied voltage, upon which, corresponding to the HP charge-controlled memristor model, a novel threshold flux-controlled memristor model with a window function is proposed. The fingerprints of the proposed model are analyzed. Especially, a practical equivalent circuit of the proposed model is realized, from which the corresponding experimental fingerprints are captured. The equivalent circuit of the threshold memristor model is appropriate for various memristors based breadboard experiments.

An equivalent model of discharge instability in the discharge chamber of Kaufman ion thruster

The industrial application of the Kaufman ion thruster in its arc stage is limited owing to the instability of the discharge pulse.Presently,a complete prediction model that can predict the discharge pulse in the high-current stage does not exist.In this study,a complete prediction model for the pulse in the ion thruster is established using the zero-dimensional plasma discharge model and equivalent circuit model.The zero-dimensional plasma discharge model is used to obtain the corresponding plasma parameters by calculating the beam current,discharge current,voltage,and gas flow under actual working conditions.The input parameters of the equivalent circuit model are calculated using empirical formulae to acquire the estimated discharge waveforms.The pulse waveforms obtained using the model are found to be consistent with the experimental results.The model is used to evaluate the process of rapid changes in plasma density.Additionally,this model is employed to predict changes in the pulse waveforms when the volume of the discharge chamber and grid plate transmittance are changed.

In Situ Acquisition of Equivalent Circuit Parameters of Crystal Resonance during Copper Deposition and Dissolution in Acidic Solution by Electrochemical Quartz Crystal Impedance System

Electrochemical quartz crystal impedance system (EQCIS) which allows in situ dynamic quartz crystal impedance measurement in an electrochemical experiment was developed by combining an HP 4395A Network/Spectrum/Impedance analyzer with an EG&G M283 potentiostat. Equivalent circuit parameters of crystal resonance change significantly during electrodeposition and dissolution of copper in 0.1 mol/L H2SO4 aqueous solution in a cyclic potential sweep experiment, which is explained with an overall picture of mass loading, solution density and viscosity, etc..