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Etching and Damage Action on Microbes' Cells by Low Energy N^+ Beam 被引量:2
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作者 宋道军 余增亮 《Plasma Science and Technology》 SCIE EI CAS CSCD 2000年第4期415-421,共7页
The action of etching and damage by 20 keV N+ beam on the cells of Deinococcus radiodurans and Escherichia coli was investigated by scanning electron microscope (SEM) and the electron spin resonance (ESR) spectrum of ... The action of etching and damage by 20 keV N+ beam on the cells of Deinococcus radiodurans and Escherichia coli was investigated by scanning electron microscope (SEM) and the electron spin resonance (ESR) spectrum of free radicals. The results showed that N+ implantation exerted the direct action of etching and damage of momentum transferring and the indirect action of the free radicals of energy deposition on their cells, many microholes were found on the surface of cells' wall and /or membrane by SEM, the damaged DNA was determined using DNA unwinding technique, and the signal of free radicals was measured by ESR. The degree of damage to cells by ion beam gradually increased with the increase implantation dose. With the post-treatment of 2 mmol/l caffeine and 0.5 mmol / l Na2-EDTA, the survival rate of D.radiodurans and E.coli further decreased in the order of caffeine > Na2-EDTA > control, and this suggested that low energy ion beam could be implanted into nucleus, doing a damage to DNA and resulting in the mutation of organisms. 展开更多
关键词 BEAM Cells by Low Energy N etching and Damage action on Microbes DNA
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