The electromagnetic field that generated by line current and sheet current at the surface of the earth can be expressed in analytical form. The line current created at the earth’s surface by an infinitely long line c...The electromagnetic field that generated by line current and sheet current at the surface of the earth can be expressed in analytical form. The line current created at the earth’s surface by an infinitely long line current is given by the inverse Fourier integrals over a horizontal wave number. The sheet current can be obtained by integrating the line current expansions using a Neumann and Struve functions;these functions have known mathematical properties, including the series expansions. The series expansions are exact with neglecting the displacement currents. Assuming a uniform earth and that there is no propagation, the three nonzero field components can be expressed in terms of the Neumann and Struve functions. The integrals of line current expansions are calculated by using the numerical methods. The results represented graphically and illustrated by figures. Results can be used to evaluate numerical solutions of more complicated modeling algorithms.展开更多
A 2-D semi-analytical model of double gate （DG） tunneling field-effect transistor （TFET） is proposed. By aid of introducing two rectangular sources located in the gate dielectric layer and the channel, the 2-D Poi...A 2-D semi-analytical model of double gate （DG） tunneling field-effect transistor （TFET） is proposed. By aid of introducing two rectangular sources located in the gate dielectric layer and the channel, the 2-D Poisson equation is solved by using a semi-analytical method combined with an eigenfunction expansion method. The expression of the surface potential is obtained, which is a special function for the infinite series expressions. The influence of the mobile charges on the potential profile is taken into account in the proposed model. On the basis of the potential profile, the shortest tunneling length and the average electrical field can be derived, and the drain current is then constructed by using Kane＇s model. In particular, the changes of the tunneling parameters Ak and Bk influenced by the drain-source voltage are also incorporated in the predicted model. The proposed model shows a good agreement with TCAD simulation results under different drain-source voltages, silicon film thicknesses, gate dielectric layer thicknesses, and gate dielectric layer constants. Therefore, it is useful to optimize the DG TFET and this provides a physical insight for circuit level design.展开更多
文摘The electromagnetic field that generated by line current and sheet current at the surface of the earth can be expressed in analytical form. The line current created at the earth’s surface by an infinitely long line current is given by the inverse Fourier integrals over a horizontal wave number. The sheet current can be obtained by integrating the line current expansions using a Neumann and Struve functions;these functions have known mathematical properties, including the series expansions. The series expansions are exact with neglecting the displacement currents. Assuming a uniform earth and that there is no propagation, the three nonzero field components can be expressed in terms of the Neumann and Struve functions. The integrals of line current expansions are calculated by using the numerical methods. The results represented graphically and illustrated by figures. Results can be used to evaluate numerical solutions of more complicated modeling algorithms.
基金Project supported by the National Natural Science Foundation of China(No.61376106)the Graduate Innovation Fund of Anhui University
文摘A 2-D semi-analytical model of double gate （DG） tunneling field-effect transistor （TFET） is proposed. By aid of introducing two rectangular sources located in the gate dielectric layer and the channel, the 2-D Poisson equation is solved by using a semi-analytical method combined with an eigenfunction expansion method. The expression of the surface potential is obtained, which is a special function for the infinite series expressions. The influence of the mobile charges on the potential profile is taken into account in the proposed model. On the basis of the potential profile, the shortest tunneling length and the average electrical field can be derived, and the drain current is then constructed by using Kane＇s model. In particular, the changes of the tunneling parameters Ak and Bk influenced by the drain-source voltage are also incorporated in the predicted model. The proposed model shows a good agreement with TCAD simulation results under different drain-source voltages, silicon film thicknesses, gate dielectric layer thicknesses, and gate dielectric layer constants. Therefore, it is useful to optimize the DG TFET and this provides a physical insight for circuit level design.
