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Spectral purity systems applied for laser-produced plasma extreme ultraviolet lithography sources:a review
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作者 Nan Lin Yunyi Chen +2 位作者 Xin Wei Wenhe Yang Yuxin Leng 《High Power Laser Science and Engineering》 SCIE CAS CSCD 2023年第5期137-152,共16页
With the development of high-volume manufacturing for very-large-scale integrated circuits,the purity of the light source in the extreme ultraviolet lithography(EUVL)system needs to fulfil extreme requirements in orde... With the development of high-volume manufacturing for very-large-scale integrated circuits,the purity of the light source in the extreme ultraviolet lithography(EUVL)system needs to fulfil extreme requirements in order to avoid thermal effect,optical distortion and critical dimension errors caused by out-of-band radiations.This paper reviews the key technologies and developments of the spectral purity systems for both a free-standing system and a built-in system integrated with the collector.The main challenges and developing trends are also discussed,with a view towards practical applications for further improvement.Designing and manufacturing spectral purity systems for EUVL is not a single task;rather,it requires systematic considerations for all relevant modules.Moreover,the requirement of spectral purity filters drives the innovation in filtering technologies,optical micromachining and advanced metrology. 展开更多
关键词 collector mirror extreme ultraviolet lithography spectral purity filter
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All-reflective optical system design for extreme ultraviolet lithography 被引量:2
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作者 常军 邹美芳 +2 位作者 王蕊瑞 冯树龙 M.M.Talha 《Chinese Optics Letters》 SCIE EI CAS CSCD 2010年第11期1082-1084,共3页
All-reflective optical systems,due to their material absorption and low refractive index,are used to create the most suitable devices in extreme ultraviolet lithography (EUVL).In this letter,we present a design for ... All-reflective optical systems,due to their material absorption and low refractive index,are used to create the most suitable devices in extreme ultraviolet lithography (EUVL).In this letter,we present a design for an all-reflective lithographic projection lens.We also discuss its design idea and structural system.After analysis of the four-mirror optical system,the initial structural parameters are determined,the optical system is optimized,and the tolerances of the system are analyzed.We also show the implementation of optimal layout and desired imaging performance. 展开更多
关键词 Design? ?extreme ultraviolet lithography? ?Optimization? ?Refractive index? ?Systems analysis
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用于EUV图案化的新型氧化锌簇交联策略的辐射化学
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作者 司友明 周丹红 +4 位作者 赵俊 彭译锋 陈鹏忠 樊江莉 彭孝军 《Science China Materials》 SCIE EI CAS CSCD 2024年第5期1588-1593,共6页
由于C=C双键交联反应机制的成熟,金属氧化物光刻胶得到了广泛的发展.然而,由于不稳定的C=C双键,这种材料需要低温和遮光存储.在此,首次在金属氧簇中提出了C-F键交联策略用于光刻图案化.以光刻胶Zn-TBA为例,它形成光滑无缺陷的薄膜,且表... 由于C=C双键交联反应机制的成熟,金属氧化物光刻胶得到了广泛的发展.然而,由于不稳定的C=C双键,这种材料需要低温和遮光存储.在此,首次在金属氧簇中提出了C-F键交联策略用于光刻图案化.以光刻胶Zn-TBA为例,它形成光滑无缺陷的薄膜,且表面粗糙度Rq小于0.2 nm.使用极紫外(EUV)干涉掩模,在65 mJ cm^(-2)曝光剂量下形成37.5 nm的半周期(HP)图案.在EUV曝光和正己烷显影后,通过原子力显微镜(AFM)观察到负性光刻胶形貌.重要的是,Zn-TBA可以在室温和明亮的环境中储存.除了脱羧之外,我们还提出光引发的C-F交联是Zn-TBA图案的主要贡献者,并通过高分辨率X射线光电子能谱(HRXPS)和密度泛函理论(DFT)计算得以证明.这种新颖的光刻机制为下一代金属基材料的设计提供了新的思路. 展开更多
关键词 zinc-oxo cluster C-F crosslinking extreme ultraviolet lithography radiation chemistry lithography mechanism
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Optical design for EUV lithography source collector 被引量:2
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作者 张树青 王骐 +2 位作者 祝东远 李润顺 刘畅 《Chinese Optics Letters》 SCIE EI CAS CSCD 2011年第5期66-69,共4页
Wolter I collector is the best collector for extreme ultraviolet (EUV) lithography, which has a series of nested mirrors. It has high collection efficiency and can obtain more uniform intensity distribution at the i... Wolter I collector is the best collector for extreme ultraviolet (EUV) lithography, which has a series of nested mirrors. It has high collection efficiency and can obtain more uniform intensity distribution at the intermediate focus (IF). A new design with the calculation sequence from the outer mirror to the inner one on the premise of satisfying the requirements of the collector is introduced. Based on this concept, a computer program is established and the optical parameters of the collector using the program is calculated. The design results indicate that the collector satisfies all the requirements. 展开更多
关键词 extreme ultraviolet lithography Optical design
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