This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowl...This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides （such as （RuO4）2- and RUO4- changed into soluble amine salts [R（NH3）4] （RuO4）2） and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.展开更多
The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acqu...The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating ability under the condition of low pressure and low abrasive concentration during the CMP process. According to the results of several kinds of additive interaction curves when the pressure is 13.78 kPa, flow rate is 150 mL/min, and the rotating speed is 55/60 rpm, it can be demonstrated that the FA/O chelating agent plays important role during the CMP process.展开更多
基金Project supported by the Special Project Items No.2 in National Long-Term Technology Development Plan(No.2009ZX02308)the Natural Science Foundation of Hebei Province(No.E2013202247)+2 种基金the Science and Technology Plan Project of Hebei Province(Nos.Z2010112,10213936)the Hebei Provincial Department of Education Fund(No.2011128)the Scientific Research Fund of Hebei Provincial Education(No.QN2014208)
文摘This paper investigated the effect of FA/O and hydrogen peroxide （H2O2） on ruthenium （Ru） removal rate （RR） and static etching rate （SER）. It was revealed that Ru RR and SER first linearly increased then slowly decreaseed with the increasing H2O2 probably due to the formation of uniform Ru oxides on the surface during polishing. Their corrosion behaviors and states of surface oxidation were analyzed. In addition, FA/O could chelate Ru oxides （such as （RuO4）2- and RUO4- changed into soluble amine salts [R（NH3）4] （RuO4）2） and enhance Ru RR. The non-ionic surfactant AD was used to improve the Ru CMP performance. In particular, the addition of AD can lead to significant improvement of the surface roughness.
基金supported by the Major National Science and Technology Special Projects(No.2009ZX02308)the National Natural Science Foundation of Hebei Province(No.E2013202247)the Fund Project of Hebei Provincial Department of Education(No.2011128)
文摘The mechanism of the FA/O chelating agent in the process of chemical mechanical polishing （CMP） is introduced. CMP is carried on a φ300 mm copper film. The higher polishing rate and lower surface roughness are acquired due to the action of an FA/O chelating agent with an extremely strong chelating ability under the condition of low pressure and low abrasive concentration during the CMP process. According to the results of several kinds of additive interaction curves when the pressure is 13.78 kPa, flow rate is 150 mL/min, and the rotating speed is 55/60 rpm, it can be demonstrated that the FA/O chelating agent plays important role during the CMP process.
