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An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p^+ adjusting region 被引量:1
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作者 王彩琳 张磊 《Journal of Semiconductors》 EI CAS CSCD 2015年第4期61-65,共5页
An improved field charge extraction (FCE) diode with a deep p+ adjusting region at the cathode side is studied. The reverse recovery mechanism and electric field gradient are thoroughly analyzed and validated using... An improved field charge extraction (FCE) diode with a deep p+ adjusting region at the cathode side is studied. The reverse recovery mechanism and electric field gradient are thoroughly analyzed and validated using ISE simulation results. The results show that, based on the premise of ensuring the static characteristics, the improved FCE diode can clearly improve the softness and effectively suppress the peak electric field of the nnjunction at the cathode side during reverse recovery, and thus has a high dynamic avalanche capability compared with conventional FCE diodes. 展开更多
关键词 power semiconductor device fsrd SOFTNESS dynamic avalanche
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