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Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor
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作者 Yaqian Liu Minrui Lian +1 位作者 Wei Chen Huipeng Chen 《International Journal of Extreme Manufacturing》 SCIE EI CAS CSCD 2024年第2期273-295,共23页
The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and... The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics. 展开更多
关键词 organic field effect transistor neuromorphic systems synaptic transistor sensory perception systems device fabrication
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Design and Analysis of Graphene Based Tunnel Field Effect Transistor with Various Ambipolar Reducing Techniques
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作者 Puneet Kumar Mishra Amrita Rai +5 位作者 Nitin Sharma Kanika Sharma Nitin Mittal Mohd Anul Haq Ilyas Khan ElSayed M.Tag El Din 《Computers, Materials & Continua》 SCIE EI 2023年第7期1309-1320,共12页
The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characte... The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications. 展开更多
关键词 GRAPHENE tunnel field effect transistor(TFET) band to band tunnelling subthreshold swing
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High Performance of Enhanced Mode Field Effect Transistor and Ultraviolet Sensor Based on ZnO Nanosheet
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作者 高志伟 吴昱昆 +1 位作者 李俊文 王晓平 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2015年第1期1-5,I0001,共6页
ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor (FET) and ultravi... ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor (FET) and ultraviolet (UV) sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off cur- rent ratio can reach 256 cm2/(V.s) and ~10^8, respectively. Moreover, the response of UV sensors can also be remarkably improved to ~3 × 10^8. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices. 展开更多
关键词 ZNO NANOSHEETS field effect transistor UV sensor
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Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material 被引量:5
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作者 Hang Dong Huiwen Xue +4 位作者 Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu 《Journal of Semiconductors》 EI CAS CSCD 2019年第1期17-25,共9页
As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and l... As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(~ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed. 展开更多
关键词 gallium oxide(Ga_2O_3) ultra-wide bandgap semiconductor power device field effect transistor(FET)
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Study on Extended Gate Field Effect Transistor with Nano-TiO-2 Sensing Membrane by Sol-Gel Method 被引量:1
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作者 Yi-Hung Liao Jung-Chuan Chou 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期252-253,共2页
The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is t... The nano-titanium dioxide (nano-TiO_2) sensing membrane,fabricated by sol-gel technology,was used as the pH-sensing layer of the extended gate field effect transistor (EGFET) device.The objective of this research is the preparation of titanium dioxide materials by sol-gel method using Ti(OBu)_4 as the precursor.In this study,we fabricated a nano-titanium dioxide sensing layer on the ITO glass by dip coating.In order to examine the sensitivity of the nano-TiO_2 films applied to the EGFET devices,we adopted the ITO glass as substrate,and measured theⅠ_(DS)-Ⅴ_G curves of the nano-titanium dioxide separative structure EGFET device in the pH buffer solutions that have different pH values by the Keithley 236 Instrument.By the experimental results,we can obtain the pH sensitivities of the EGFET with nano-TiO_2 sensing membrane prepared by sol-gel method,which is 59.86mV/pH from pH 1 to pH 9. 展开更多
关键词 extended gate field effect transistor(EGFET) SOL-GEL NANO-TIO2 sensing membrane buffer solution
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Study on the Carbon Nanotube Separative Structure for the Extended Gate H^+-Ion Sensitive Field Effect Transistor 被引量:1
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作者 Yi-Hung Liao Jung-Chuan Chou 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期225-227,共3页
We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT p... We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) device.The CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing layer.We measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement system.According to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13. 展开更多
关键词 carbon nanotube extended gate field effect transistor pH sensitivity buffer solution
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Study of Non-Ideal Effects for Extended Gate Field Effect Transistor Chlorine Ion Sensing Device 被引量:1
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作者 Jung-Chuan Chou Pei-Lan Chou 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期242-243,共2页
We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then ... We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is completed.The surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion concentration.We will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device. 展开更多
关键词 extended gate field effect transistor chlorine ion ionophore chlorine ion sensing device temperature effect hysteresis effect drift effect
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Effect of depositing PCBM on perovskite-based metal–oxide–semiconductor field effect transistors 被引量:1
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作者 Su-Zhen Luan Yu-Cheng Wang +1 位作者 Yin-Tao Liu Ren-Xu Jia 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第4期391-395,共5页
In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and ... In this manuscript,the perovskite-based metal–oxide–semiconductor field effect transistors(MOSFETs) with phenylC61-butyric acid methylester(PCBM) layers are studied.The MOSFETs are fabricated on perovskites,and characterized by photoluminescence spectra(PL),x-ray diffraction(XRD),and x-ray photoelectron spectroscopy(XPS).With PCBM layers,the current–voltage hysteresis phenomenon is effetely inhibited,and both the transfer and output current values increase.The band energy diagrams are proposed,which indicate that the electrons are transferred into the PCBM layer,resulting in the increase of photocurrent.The electron mobility and hole mobility are extracted from the transfer curves,which are about one order of magnitude as large as those of PCBM deposited,which is the reason why the electrons are transferred into the PCBM layer and the holes are still in the perovskites,and the effects of ionized impurity scattering on carrier transport become smaller. 展开更多
关键词 metal-oxide-semiconductor field effect transistors photoelectric characteristics PEROVSKITE
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Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric P(VDF-TrFE) Field Effect Transistors Using p-type Silicon Nanowire Channels 被引量:1
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作者 Ngoc Huynh Van Jae-Hyun Lee +1 位作者 Dongmok Whang Dae Joon Kang 《Nano-Micro Letters》 SCIE EI CAS 2015年第1期35-41,共7页
A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferr... A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene)(P(VDF-Tr FE)). We overcame the interfacial layer problem by incorporating P(VDF-Tr FE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 105, a long retention time greater than 3 9 104 s, and a high endurance of over 105 programming cycles while maintaining an ION/IOFFratio higher than 102. 展开更多
关键词 Si nanowires field effect transistor Ferroelectric memory
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Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors 被引量:1
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作者 Shi-Li Yan Zhi-Jian Xie +2 位作者 Jian-Hao Chen Takashi Taniguchi Kenji Watanabe 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第4期87-91,共5页
The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is o... The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus (BP) by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging. 展开更多
关键词 Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus field effect transistors FET BP
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Study on the Drift Effect of Potassium Ion Sensing Based on the Extended Gate Field Effect Transistor
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作者 Jung-Chuan Chou Ching-Hsiang Hsu 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期259-260,共2页
The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Al... The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better stability.Although EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with time.We can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S hours.This study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium ion.The fabrication of the potassium ion sensor can be widely employed in medical detection. 展开更多
关键词 potassium ion extended gate field effect transistor RuO_x/Si wafer sensitivity DRIFT
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Effect of Residual Charge Carrier on the Performance of a Graphene Field Effect Transistor
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作者 Sedighe Salimian Mohammad Esmaeil Azim Araghi 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第1期113-117,共5页
The temperature-dependent effect of residual charge carrier (no), at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor (GFET) using 7nm TiO2 as the top-gate ... The temperature-dependent effect of residual charge carrier (no), at the Dirac point, on mobility is studied. We fabricate and characterize a graphene field effect transistor (GFET) using 7nm TiO2 as the top-gate dielectric. The temperature-dependent gate voltage-drain current and room temperature gate capacitance are measured to extract the carrier mobility and to estimate the quantum capacitance of the GFET. The device shows the mobility value of gOO cm^2 /V.s at room temperature and it decreases to 45 cm^2 /V.s for 20 K due to the increase of n0. These results indicate that the phonon scattering is not the dominant process for the unevenness dielectric layer while the coulomb scattering by charged impurities degrades the device characteristically at low temperature. 展开更多
关键词 of it by effect of Residual Charge Carrier on the Performance of a Graphene field effect transistor on IS VTG HIGH for into that
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Extended Gate Field Effect Transistor Based Measuring of the Vitamin C content of Orange Juice
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作者 Jung-Chuan Chou 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期342-343,共2页
An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C sensor.Therefore,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to ... An extended-gate field effect transistor (EGFET)of SnO_2/ITO glass was applied to manufacture the vitamin C sensor.Therefore,we immobilized the ascorbate oxidase with 3-glycidoxypropyltrimethoxysilane (GPTS)method to measure the different concentrations of the vitamin C solution in an optimum measurement environment.In order to find the best measurement conditions of the biosensor,we studied the vitamin C sensor in different pH values of the phosphate buffer solution (PBS).Additionally,we used experimental results to discuss the response time and response voltage to compare vitamin C with orange juice for the vitamin C sensor. 展开更多
关键词 orange juice extended-gate field effect transistor SnO2/ITO glass vitamin C sensor
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Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate
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作者 倪毅强 贺致远 +8 位作者 姚尧 杨帆 周德秋 周桂林 沈震 钟健 郑越 张佰君 刘扬 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第5期529-534,共6页
We report a novel structure of A1GaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped inte... We report a novel structure of A1GaN/GaN heterostructure field effect transistors (HFETs) with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio ( - 10^9). Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current. 展开更多
关键词 heterostructure field effect transistor (HFET) GaN on Si INTERLAYERS high on/off ratio
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Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field effect transistor
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作者 曹全君 张义门 贾立新 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第10期4456-4459,共4页
Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H-SiC metal... Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region, this paper investigates the behavior of DIBL (drain induced barrier lowering) effect for short channel 4H-SiC metal semiconductor field effect transistors (MESFETs). An accurate analytical model of threshold voltage shift for the asymmetric short channel 4H-SiC MESFET is presented and thus verified. According to the presented model, it analyses the threshold voltage for short channel device on the L/a (channel length/channel depth) ratio, drain applied voltage VDS and channel doping concentration ND, thus providing a good basis for the design and modelling of short channel 4H-SiC MESFETs device. 展开更多
关键词 4H silicon carbide metal semiconductor field effect transistor drain induced barrierlowering effect short channel
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Impact of Channel Length and Width for Charge Transportation of Graphene Field Effect Transistor
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作者 Kamal Hosen Md.Rasidul Islam Kong Liu 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 2020年第6期757-763,I0003,共8页
The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extre... The effect of channel length and width on the large and small-signal parameters of the graphene field effect transistor have been explored using an analytical approach.In the case of faster saturation as well as extremely high transit frequency,the graphene field effect transistor shows outstanding performance.From the transfer curve,it is observed that there is a positive shift of Dirac point from the voltage of 0.15 V to 0.35 V because of reducing channel length from 440 nm to 20 nm and this curve depicts that graphene shows ambipolar behavior.Besides,it is found that because of widening channel the drain current increases and the maximum current is found approximately 2.4 mA and 6 mA for channel width 2μm and 5μm respectively.Furthermore,an approximate symmetrical capacitance-voltage(C-V)characteristic of the graphene field effect transistor is obtained and the capacitance reduces when the channel length decreases but the capacitance can be increased by raising the channel width.In addition,a high transconductance,that demands high-speed radio frequency(RF)applications,of 6.4 mS at channel length 20 nm and 4.45 mS at channel width 5μm along with a high transit frequency of 3.95 THz have been found that demands high-speed radio frequency applications. 展开更多
关键词 GRAPHENE Graphene field effect transistor Large signal Small-signal Channel length Channel width
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Top contact organic field effect transistors fabricated using a photolithographic process
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作者 王宏 姬濯宇 +3 位作者 商立伟 刘兴华 彭应全 刘明 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第8期389-393,共5页
This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolit... This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process. 展开更多
关键词 organic field effect transistors top contact photolithographic
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Comparison of tunneling currents in graphene nanoribbon tunnel field effect transistors calculated using Dirac-like equation and Schrodinger’s equation
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作者 Endi Suhendi Lilik Hasanah +3 位作者 Dadi Rusdiana Fatimah A. Noor Neny Kurniasih Khairurrijal 《Journal of Semiconductors》 EI CAS CSCD 2019年第6期43-47,共5页
The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like... The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation. 展开更多
关键词 graphene nanoribbon tunnel field effect transistor tunneling current Schrodinger equation Dirac-like equation
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Fabrication of the Sodium Ions Extended Gate Field Effect Transistor by Using the Entrapment Method
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作者 Jung-Chuan Chou 《稀有金属材料与工程》 SCIE EI CAS CSCD 北大核心 2006年第A03期246-247,共2页
The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathologi... The sodium ion is necessary in physiological function and an important element in blood of human body,because the concentration of the sodium ion in the blood directly affects the functions of some organs or pathological feature,how to detect it is an important affair.In this paper,we measure the concentration of sodium ions by the extended gate field effect transistor (EGFET).We use three different substrates RuO_x/p-Si,ITO glass,SnO_2/ITO to fabricate EGFET,and we choose the optimum structure.The fabrication of device needed to use the entrapment method. 展开更多
关键词 sodium ion extended gate field effect transistor(EGFET) entrapment method
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Improvement of switching characteristics by substrate bias in AlGaN/AlN/GaN heterostructure field effect transistors
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作者 杨铭 林兆军 +4 位作者 赵景涛 王玉堂 李志远 吕元杰 冯志红 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第11期406-409,共4页
A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase ... A simple and effective approach to improve the switching characteristics of AlGaN/AlN/GaN heterostructure field effect transistors (HFETs) by applying a voltage bias on the substrate is presented. With the increase of the substrate bias, the OFF-state drain current is much reduced and the ON-state current keeps constant. Both the ON/OFF current ratio and the subthreshold swing are demonstrated to be greatly improved. With the thinned substrate, the improvement of the switching characteristics with the substrate bias is found to be even greater. The above improvements of the switching characteristics are attributed to the interaction between the substrate bias induced electrical field and the bulk traps in the GaN buffer layer, which reduces the conductivity of the GaN buffer layer. 展开更多
关键词 AlaN/GaN heterostructure field effect transistors (HFETs) switching characteristics substratebias
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