Phase Transformation and Enhancing Electron Field Emission Properties in Microcrystalline Diamond Films Induced by Cu Ion Implantation and Rapid Annealing

Cu ion implantation and subsequent rapid annealing at 500℃ in N2 result in low surface resistivity of 1.611 ohm/sq with high mobility of 290 cm2 V-1S-1 for microcrystalline diamond （MCD） films. Its electrical field emission behavior can be turned on at Eo = 2.6 V/μm, attaining a current density of 19.5μA/cm2 at an applied field of 3.5 V/#m. Field emission scanning electron microscopy combined with Raman and x-ray photoelectron mi- croscopy reveal that the formation of Cu nanoparticles in MCD films can catalytically convert the less conducting disorder/a-C phases into graphitic phases and can provoke the formation of nanographite in the films, forming conduction channels for electron transportation.

ZnO nanorod arrays with tunable size and field emission properties on an ITO substrate achieved by an electrodeposition method

In the present work, vertically aligned ZnO nanorod arrays with tunable size are successfully synthesized on nonseeded ITO glass substrates by a simple electrodeposition method. The effect of growth conditions on the phase, morphology, and orientation of the products are studied in detail by X-ray diffraction （XRD）, scanning electron mi-croscopy （SEM）, and transmission electron microscopy （TEM）. It is observed that the as-prepared nanostructures exhibit a preferred orientation along c axis, and the size and density of the ZnO nanorod can be controlled by changing the concentration of ZnC12. Field emission properties of the as-synthesized samples with different diameters are also studied, and the results show that the nanorod arrays with a smaller diameter and appropriate rod density exhibit better emission properties. The ZnO nanorod arrays show a potential application in field emitters.

Effect of metal nanoparticle doping concentration on surface morphology and field emission properties of nano-diamond films

Nano-diamond particles are co-deposited on Ti substrates with metal(Ti/Ni) nanoparticles(NPs) by the electrophoretic deposition(EPD) method combined with a furnace annealing at 800℃ under N_(2) atmosphere. Modifications of structural and electron field emission(EFE) properties of the metal-doped films are investigated with different metal NPs concentrations. Our results show that the surface characteristics and EFE performances of the samples are first enhanced and then reduced with metal NPs concentration increasing. Both the Ti-doped and Ni-doped nano-diamond composite films exhibit optimal EFE and microstructural performances when the doping quantity is 5 mg. Remarkably enhanced EFE properties with a low turn-on field of 1.38 V/μm and a high current density of 1.32 mA/cm^(2) at an applied field of 2.94 V/μm are achieved for Ni-doped nano-diamond films, and are superior to those for Ti-doped ones. The enhancement of the EFE properties for the Ti-doped films results from the formation of the TiC-network after annealing. However, the doping of electron-rich Ni NPs and formation of high conductive graphitic phase are considered to be the factor, which results in marvelous EFE properties for these Ni-doped nano-diamond films.

Preparation of patterned boron nanowire films with different widths of unit-cell and their field emission properties

Large-area patterned films of boron nanowires（BNWs） are fabricated at various densities by chemical vapor deposition（CVD）. Different widths of unit-cell of Mo masks are used as templates. The widths of unit-cell of Mo masks are100 μm, 150 μm, and 200 μm, respectively. The distance between unit cells is 50 μm. The BNWs have an average diameter of about 20 nm and lengths of 10 μm–20 μm. High-resolution transmission electron microscopy analysis shows that each nanowire has a β-tetragonal structure with good crystallization. Field emission measurements of the BNW films show that their turn-on electric fields decrease with width of unit-cell increasing.

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Large-area boron nanowire（BNW） films were fabricated on the Si（111） substrate by chemical vapor deposition（CVD）. The average diameter of the BNWs is about 20 nm, with lengths of 5–10 μm. Then, graphene-capped boron nanowires（GC-BNWs） were obtained by microwave plasma chemical vapor deposition（MPCVD）. Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.

Field Emission Properties of Nano-DLC Films Prepared on Cu Substrates by Pulsed Laser Deposition

Nano-diamond like carbon（DLC） thin films were prepared on fused silica and Cu substrates by the pulsed-laser deposition technique with different laser intensities. Step-measurement, atomic force microscope（AFM）, UV-VIS-NIR transmittance spectroscopy and Raman spectroscopy were used to characterize the films. It was shown that the deposition rate increases with the laser intensity, and the films prepared under different laser intensities show different transparency. Raman measurement showed that the content of sp^3 of the Nano-DLC thin films decreases with the laser intensity. The field emission properties of the Nano-DLC thin films on Cu substrates were studied by the conventional diode method, which showed that the turn-on field increases and the current density decreases with sp^3 content in the films. A lower turn-on field of 6 V/um and a higher current density of 1 uA/cm^2 were obtained for Nano-DLC thin films on Cu substrate.

Tuning field emission properties of boron nanocones with catalyst concentration

Single crystalline boron nanocones are prepared by using a simple spin spread method in which Fe3O4 nanoparticles are pre-manipulated on Si（lll） to form catalyst patterns of different densities. The density of boron nanocones can be tuned by changing the concentration of catalyst nanoparticles. High-resolution transmission electron microscopy analysis shows that the boron nanocone has a β-tetragonal structure with good crystallization. The field emission behaviour is optimal when the spacing distance is close to the nanocone length, which indicates that this simple spin spread method has great potential applications in electron emission nanodevices.

Synthesis of Monodisperse CoPt3 Nanocrystals and Their Catalytic Behavior for Growth of Boron Nanowires

Monodisperse CoPh nanocrystals （NCs） have been synthesized in oleylamine solution by an organic solvothermal method. The NCs were ellipsoidal particles with a diameter around 6.6 nm and length around 10 nm with a good single crystal structure. Using CoPt3 NCs as catalysts, large-area boron nanowires with diameters ranging from 30 to 50 nm were successfully prepared by chemical vapor deposition using a C/B/B203 mixture as the precursor. Structural analysis indicated that these nanowires were single crystalline with a fl-rhombohedral structure. Measurement of the field emission properties of boron nanowire films showed that the boron nanowires have good field emission characteristics.