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Synthesis of large FeSe superconductor crystals via ion release/introduction and property characterization 被引量:1
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作者 苑冬娜 黄裕龙 +8 位作者 倪顺利 周花雪 毛义元 胡卫 袁洁 金魁 张广铭 董晓莉 周放 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第7期93-96,共4页
Large superconducting Fe Se crystals of(001) orientation have been prepared via a hydrothermal ion release/introduction route for the first time. The hydrothermally derived Fe Se crystals are up to 10 mm×5 mm&#... Large superconducting Fe Se crystals of(001) orientation have been prepared via a hydrothermal ion release/introduction route for the first time. The hydrothermally derived Fe Se crystals are up to 10 mm×5 mm×0.3 mm in dimension. The pure tetragonal FeSe phase has been confirmed by x-ray diffraction(XRD) and the composition determined by both inductively coupled plasma atomic emission spectroscopy(ICP-AES) and energy dispersive x-ray spectroscopy(EDX). The superconducting transition of the Fe Se samples has been characterized by magnetic and transport measurements. The zero-temperature upper critical field H(c2) is calculated to be 13.2–16.7 T from a two-band model. The normal-state cooperative paramagnetism is found to be predominated by strong spin frustrations below the characteristic temperature T(sn), where the Ising spin nematicity has been discerned in the FeSe superconductor crystals as reported elsewhere. 展开更多
关键词 FeSe superconductor hydrothermal growth via ion release/introduction upper critical field spin frustrations
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A new fabrication process for the SOI-based miniature electric field sensor
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作者 刘伟 杨鹏飞 +2 位作者 彭春荣 方东明 夏善红 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期205-209,共5页
This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO_2 layer.Compared with the CO_2 critical point release meth... This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO_2 layer.Compared with the CO_2 critical point release method,it significantly improves the device surface cleanliness and shortens the process flow.The impurity on the base layer is analyzed.The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice.This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors,gyroscopes,and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes. 展开更多
关键词 electrostatic field sensor SOI sacrificial layer release polyimide DRIE
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