Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design...Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design targets,or are difficult to suit for different types of structures,e.g.,designing for different materials at each layer.These methods also cannot accommodate versatile design situations under different angles and polarizations.In addition,how to benefit practical fabrications and manufacturing has not been extensively considered yet.In this work,we introduce OptoGPT(Opto Generative Pretrained Transformer),a decoder-only transformer,to solve all these drawbacks and issues simultaneously.展开更多
The Indium tin oxide(ITO) thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant ...The Indium tin oxide(ITO) thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant monoethanolamine and the non-ionic surfactant polyethylene glycol(PEG) were added to the ITO precursor slurry.The influences of surfactants on the structural and photoelectric properties of ITO film samples were investigated.XRD patterns indicated that surfactant monoethanolamine contributed to film predominant grain orientation along the(400) plane.The high transmittance(over 95%) was attributed to the preferred orientation and the grain size expansion of ITO films.SEM showed that the surface particle size and the morphology of ITO films were strongly dependent on the kind of surfactants used.Moving to the shortwave region, the absorption edge of the films exhibited the Burstein-Moss shift.展开更多
The films deposited at low temperature(LT-films) have increasingly attracted theoretical and technical interests since such films exhibit obvious difference in structure and performances compared to those deposited ...The films deposited at low temperature(LT-films) have increasingly attracted theoretical and technical interests since such films exhibit obvious difference in structure and performances compared to those deposited at room temperature.Studies on the tribological properties of LT-films are rarely reported in available literatures.In this paper,the structure,morphology and tribological properties of Ag films,deposited at LT(166 K) under various Ar pressures on AISI 440C steel substrates by arc ion plating(AIP),are studied by X-ray diffraction(XRD),atomic force microscopy(AFM) and a vacuum ball-on-disk tribometer,and compared with the Ag films deposited at RT(300 K).XRD results show that(200) preferred orientation of the films is promoted at LT and low Ar pressure.The Crystallite sizes are 70 nm-80 nm for LT-Ag films deposited at 0.2 Pa and 0.8 Pa and larger than 100 nm for LT-Ag films deposited at 0.4 Pa and 0.6 Pa,while they are 55 nm-60 nm for RT-Ag films deposited at 0.2 Pa-0.6 Pa and 37 nm for RT-Ag films deposited at 0.8 Pa.The surfaces of LT-Ag films are fibre-like at 0.6 Pa and 0.8 Pa,terrace-like at 0.4 Pa,and sphere-like at 0.2 Pa,while the surfaces of RT-Ag films are composed of sphere-like grains separated by voids.Wear tests reveal that,due to the compact microstructure LT-Ag films have better wear resistances than RT-Ag film.These results indicate that the microstructure and wear resistance of Ag films deposited by AIP can be improved by low temperature deposition.展开更多
This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LE...This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.展开更多
A model of giant magneto-impedance (GMI) effect in sandwich-structured film has been proposed based on the superposition principle of electromagnetic field. The expression of impedance is derived in the frames of el...A model of giant magneto-impedance (GMI) effect in sandwich-structured film has been proposed based on the superposition principle of electromagnetic field. The expression of impedance is derived in the frames of electrodynamics and ferromagnetism. Electromagnetic interaction between the inner layer and outer layer is discussed. Numerical simulation is conducted and the results show that the conductivity of the inner layer is much larger than that of the outer ferromagnetic layer. The skin effect and the maximum GMI effect of the sandwich film may appear at a much lower frequency compared to that of monofilm. The computational results agree with experimental data.展开更多
For evaporation-deposited Ti films, face-centred cubic structure was observed at the initial stage of film growth, then transited to the hexagonal close-packed structure during film growing (less than 50 nm thick). Wh...For evaporation-deposited Ti films, face-centred cubic structure was observed at the initial stage of film growth, then transited to the hexagonal close-packed structure during film growing (less than 50 nm thick). While. for ion-beam sputter-deposited films. the structure of films always kept the fcc structure during all stages of film formation. The structure of film at initial growth stages relates with the substrate. It is discussed that different film processes and different growth stages provide different thermodynamic condition of film formation and result in the different crystal structures of films during the film formation展开更多
(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and op...(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.展开更多
Ti-containing carbon films were deposited by using magnetron sputtering deposition. The composition and microstructure of the carbon films were characterized in detail by combining the techniques of Rutherford backsca...Ti-containing carbon films were deposited by using magnetron sputtering deposition. The composition and microstructure of the carbon films were characterized in detail by combining the techniques of Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that carbon films contain Ti 18 at pct; after Ti incorporation, the films consist of titanium carbide; C1s peak appears at 283.4 eV and it could be divided into 283.29 and 284.55 eV, representing sp2 and sp3, respectively, and sp2 is superior to sp3. This Ti-containing film with dominating sp2 bonds is nanocomposites with nanocrystalline TiC clusters embedded in an amorphous carbon matrix, which could be proved by XRD and TEM.展开更多
Langmuir-Blodgett(LB)films of tetra-nonyl phthalocyanine copper (TNPcCu)were prepared.Molecular arrangement and orientation of these films were studied in detail.LB multilayer films of TNPcCu show a very Strong x-ray ...Langmuir-Blodgett(LB)films of tetra-nonyl phthalocyanine copper (TNPcCu)were prepared.Molecular arrangement and orientation of these films were studied in detail.LB multilayer films of TNPcCu show a very Strong x-ray diffration peak and two weak peaks which indicate that the LB films form a quasi-crystal structure which molecules are arranged orderly.IR reflection absorption spectra and polarized VIS absorption spectra not only confirm the previous result but also indicate that phthalocyanine rings orient nearly perpendicular to the substrate surface and perpendicular to the lifting direction and the side-chain segments are not preferred oriented.展开更多
The evolution of a magnetic domain structure induced by temperature and magnetic field is reported in silicon- doped yttrium iron garnet (YIG) films with perpendicular anisotropy. During a cooling-down procedure fro...The evolution of a magnetic domain structure induced by temperature and magnetic field is reported in silicon- doped yttrium iron garnet (YIG) films with perpendicular anisotropy. During a cooling-down procedure from 300K to 7K, a 20% change in the domain width is observed, with the long tails of the stripes being shortened and the twisting stripes being straightened. Under the influence of the stray field of a barium ferrite, the garnet presents an interesting domain structure, which shows an appearance of branching protrusions. The intrinsic mechanisms in these two processes are also discussed.展开更多
The microstructure of CdI2 thin film grown during vapor-phase deposition was investigated by scanning electron microscopy (SEM). The thin film deposited on Si crystal consists of numerous sunflower-like aggregates. Th...The microstructure of CdI2 thin film grown during vapor-phase deposition was investigated by scanning electron microscopy (SEM). The thin film deposited on Si crystal consists of numerous sunflower-like aggregates. These aggregates display well self-assembly characteristics. The size of Sunflower-like aggregates is between 12 and 44 μm. Each sunflower-like aggregate is surrounded with many adjacent wings-'petals'. The structure of central region of the 'sunflower' is obviously difFerent from that of the 'petal'. Electron spectroscopy for chemical analysis (ESCA) was employed in determining the chemical valence of the thin film. Self-organization efFect is used to explain the coring growth process of CdI2 thin film展开更多
By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon ...By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.展开更多
Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the i...Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the increase in substrate temperature (TS). The magnetic properties of the films were investigated by a vibrating sample magnetometer (VSM). The structure of the films is insensitive to the ratios of N2/Ar in main ion source(MIS), and is mainly influenced by the substrate temperature (Ts).展开更多
CaN films with an AlxGa1-xN/AlyGa1-xN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are stu...CaN films with an AlxGa1-xN/AlyGa1-xN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the CaN layers are strongly dependent on the difference of the Al composition between AlxCa1-xN barriers and AlyCa1-yN wells in the SLs. With a large Al composition difference, the CaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the CaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained CaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1-xN/AlyGal-yN SL buffer layer is a promising buffer structure for growing thick CaN films on Si substrates without crack generation.展开更多
By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped (Sr1-xLax)2IrO4 (001) (x=0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigate the d...By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped (Sr1-xLax)2IrO4 (001) (x=0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigate the doping dependence of the electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. It is found that with the increasing doping content, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point is evidently observed in the 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that the doping effectively suppresses the insulating state with respect to the as-grown Sr2IrO4, though the doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2 IrO4.展开更多
Regulating the surface instability of thin film/substrate structures has been successfully applied to prepare new ductile electronic devices.However,such electronic devices need to be subjected to external loads durin...Regulating the surface instability of thin film/substrate structures has been successfully applied to prepare new ductile electronic devices.However,such electronic devices need to be subjected to external loads during operation,which can easily induce delamination of the thin-film electronic device from the substrate.This study aims to investigate the instability characteristics of hard films on flexible substrate surfaces from theoretical analysis and numerical simulation perspectives.Considering finite-thickness substrates,this paper establishes theoretical models for pure bending,bent wrinkle,partial delamination,and total delamination buckling of film/substrate structures based on the nonlinear Euler–Bernoulli beam theory and the principle of minimum energy;then the effects of material and geometric parameters of the structure,interfacial adhesion strength,and pre-strain on the evolutionary path of the four patterns are discussed.The study results show that:the greater Young’s modulus of the substrate is,the larger the parameter region where partial delamination of the film/substrate structure occurs,and the smaller the parameter region where bent wrinkle occurs.By varying Young’s modulus,thickness of the film and substrate,interfacial adhesion coefficient,and pre-strain,the buckling pattern of the structure can be predicted and regulated.The parametric design intervals for each pattern are summarized in the phase diagram.The results of this paper provide theoretical support for the design and reliability evaluation of flexible electronic devices.展开更多
A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-...A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.展开更多
Developments of economic systems are critical for bio-regenerative life support systems in manned space missions.In this work we report on the feasibility of using two direct sunlight powered processes sequentially fo...Developments of economic systems are critical for bio-regenerative life support systems in manned space missions.In this work we report on the feasibility of using two direct sunlight powered processes sequentially for the recovery of water and nutrients from urine.The work presents experimental evidence on nutrient and water recovery achieved using the proto-type designed and developed.We report the design and testing of a solar still which would serve on the nutrient recovery front.The cooled condensate from the solar still is fed into a solar powered electrolysis unit where nano-structured indium sulphide(In_(2)S_(3))thin films coated over fluorine doped tin oxide(SnO_(2):F)substrate serve as one of the working electrodes.The electrolysis takes place in the absence of an electrolyte which manifests as a technical achievement of our work.Our results show that the COD level in the recycled water is very low.The In_(2)S_(3)photo-electrodes are stable without any physical damage after the process.展开更多
A kinetic Monte Carlo (kMC) simulation is conducted to study the growth of ultrathin film of Co on Cu(001) surface. The many-body, tight-binding potential model is used in the simulation to represent the interatom...A kinetic Monte Carlo (kMC) simulation is conducted to study the growth of ultrathin film of Co on Cu(001) surface. The many-body, tight-binding potential model is used in the simulation to represent the interatomic potential. The film morphology of heteroepitaxial Co film on a Cu(001) substrate at the transient and final state conditions with various incident energies is simulated. The Co covered area and the thickness of the film growth of the first two layers are investigated. The simulation results show that the incident energy influences the film growth and structure. There exists a transition energy where the interracial roughness is minimum. There are some void regions in the film in the final state, because of the influence of the island growth in the first few layers. In addition, there are deviations from ideal layer-by-layer growth at a coverage from 0 - 2 monolayers (ML).展开更多
Single crystal Ga X In 1-X As films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as ...Single crystal Ga X In 1-X As films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260~390℃, even at 465℃, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the Ga X In 1-X As films were investigated using X ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X ray (EDAX), Hall measurements and spectroscopic ellipsometry.展开更多
基金the National Science Foundation(PFI-008513 and FET-2309403)for the support of this work.
文摘Optical multilayer thin film structures have been widely used in numerous photonic applications.However,existing inverse design methods have many drawbacks because they either fail to quickly adapt to different design targets,or are difficult to suit for different types of structures,e.g.,designing for different materials at each layer.These methods also cannot accommodate versatile design situations under different angles and polarizations.In addition,how to benefit practical fabrications and manufacturing has not been extensively considered yet.In this work,we introduce OptoGPT(Opto Generative Pretrained Transformer),a decoder-only transformer,to solve all these drawbacks and issues simultaneously.
基金supported by the National High-Tech Research and Development Program of China (No. 2004AA303542)
文摘The Indium tin oxide(ITO) thin film possesses excellent photoelectric properties that enable it to act as an ideal transparent conductor.To obtain high-quality ITO films through sol-gel method, the ionic surfactant monoethanolamine and the non-ionic surfactant polyethylene glycol(PEG) were added to the ITO precursor slurry.The influences of surfactants on the structural and photoelectric properties of ITO film samples were investigated.XRD patterns indicated that surfactant monoethanolamine contributed to film predominant grain orientation along the(400) plane.The high transmittance(over 95%) was attributed to the preferred orientation and the grain size expansion of ITO films.SEM showed that the surface particle size and the morphology of ITO films were strongly dependent on the kind of surfactants used.Moving to the shortwave region, the absorption edge of the films exhibited the Burstein-Moss shift.
基金supported by National Basic Research Program of China(973 Project,Grant No.2007CB607601)National Natural Science Foundation of China (Grant No. 50301015)
文摘The films deposited at low temperature(LT-films) have increasingly attracted theoretical and technical interests since such films exhibit obvious difference in structure and performances compared to those deposited at room temperature.Studies on the tribological properties of LT-films are rarely reported in available literatures.In this paper,the structure,morphology and tribological properties of Ag films,deposited at LT(166 K) under various Ar pressures on AISI 440C steel substrates by arc ion plating(AIP),are studied by X-ray diffraction(XRD),atomic force microscopy(AFM) and a vacuum ball-on-disk tribometer,and compared with the Ag films deposited at RT(300 K).XRD results show that(200) preferred orientation of the films is promoted at LT and low Ar pressure.The Crystallite sizes are 70 nm-80 nm for LT-Ag films deposited at 0.2 Pa and 0.8 Pa and larger than 100 nm for LT-Ag films deposited at 0.4 Pa and 0.6 Pa,while they are 55 nm-60 nm for RT-Ag films deposited at 0.2 Pa-0.6 Pa and 37 nm for RT-Ag films deposited at 0.8 Pa.The surfaces of LT-Ag films are fibre-like at 0.6 Pa and 0.8 Pa,terrace-like at 0.4 Pa,and sphere-like at 0.2 Pa,while the surfaces of RT-Ag films are composed of sphere-like grains separated by voids.Wear tests reveal that,due to the compact microstructure LT-Ag films have better wear resistances than RT-Ag film.These results indicate that the microstructure and wear resistance of Ag films deposited by AIP can be improved by low temperature deposition.
基金Project supported by the National Key R&D Program(Nos.2016YFB0400100,2016YFB0400104)the National Natural Science Foundation of China(Nos.61534007,61404156,61522407,61604168,61775230)+7 种基金the Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDB-SSW-JSC014)the Science and Technology Service Network Initiative of the Chinese Academy of Sciencesthe Key R&D Program of Jiangsu Province(No.BE2017079)the Natural Science Foundation of Jiangsu Province(No.BK20160401)the China Postdoctoral Science Foundation(No.2016M591944)supported by the Open Fund of the State Key Laboratory of Luminescence and Applications(No.SKLA-2016-01)the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2016KF04,IOSKL2016KF07)the Seed Fund from SINANO,CAS(No.Y5AAQ51001)
文摘This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.
文摘A model of giant magneto-impedance (GMI) effect in sandwich-structured film has been proposed based on the superposition principle of electromagnetic field. The expression of impedance is derived in the frames of electrodynamics and ferromagnetism. Electromagnetic interaction between the inner layer and outer layer is discussed. Numerical simulation is conducted and the results show that the conductivity of the inner layer is much larger than that of the outer ferromagnetic layer. The skin effect and the maximum GMI effect of the sandwich film may appear at a much lower frequency compared to that of monofilm. The computational results agree with experimental data.
文摘For evaporation-deposited Ti films, face-centred cubic structure was observed at the initial stage of film growth, then transited to the hexagonal close-packed structure during film growing (less than 50 nm thick). While. for ion-beam sputter-deposited films. the structure of films always kept the fcc structure during all stages of film formation. The structure of film at initial growth stages relates with the substrate. It is discussed that different film processes and different growth stages provide different thermodynamic condition of film formation and result in the different crystal structures of films during the film formation
基金Supported by the National Natural Science Foundation of China under Grant No 60807001, and Graduate Innovation Foundation of Zhengzhou University (No A 196)
文摘(111) preferentially oriented Ag2O film deposited by direct current reactive magnetron sputtering is annealed by rapid thermal processing at different annealing temperatures for 5 min. The film microstructure and optical properties are then characterized by x-ray diffractometry, scanning electron microscopy, and spectrophotometry, respectively. The results indicate that no clear Ag diffraction peak is discernable in the Ag2O film annealed below 200°C. In comparison, the Ag2O film annealed at 200°C begins to exhibit characteristic Ag diffraction peaks, and in particular the Ag2O film annealed at 250°C can demonstrate enhanced Ag diffraction peaks. This implies that the threshold of the thermal decomposition reaction to produce Ag particles is approximately 200°C for the Ag2O film. In addition, an evolution of the film surface morphology from compact and pyramid-like to a rough and porous structure clearly occurred with increasing annealing temperature. The porous structure might be attributable to the escape of the oxygen produced during annealing, while the rough surface might originate from the reconstruction of the surface. The dispersion of interference peak intensity in the reflectance and transmission spectra could be attributed to the Ag particles produced. The lowered crystallinity and Ag particles produced induce a lattice defect, which results in an enhanced transmissivity in the violet region and a weakened transmissivity in the infrared region.
文摘Ti-containing carbon films were deposited by using magnetron sputtering deposition. The composition and microstructure of the carbon films were characterized in detail by combining the techniques of Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). It is found that carbon films contain Ti 18 at pct; after Ti incorporation, the films consist of titanium carbide; C1s peak appears at 283.4 eV and it could be divided into 283.29 and 284.55 eV, representing sp2 and sp3, respectively, and sp2 is superior to sp3. This Ti-containing film with dominating sp2 bonds is nanocomposites with nanocrystalline TiC clusters embedded in an amorphous carbon matrix, which could be proved by XRD and TEM.
文摘Langmuir-Blodgett(LB)films of tetra-nonyl phthalocyanine copper (TNPcCu)were prepared.Molecular arrangement and orientation of these films were studied in detail.LB multilayer films of TNPcCu show a very Strong x-ray diffration peak and two weak peaks which indicate that the LB films form a quasi-crystal structure which molecules are arranged orderly.IR reflection absorption spectra and polarized VIS absorption spectra not only confirm the previous result but also indicate that phthalocyanine rings orient nearly perpendicular to the substrate surface and perpendicular to the lifting direction and the side-chain segments are not preferred oriented.
基金Supported by the National Basic Research Program of China under Grant No 2013CB922304the National Natural Science Foundation of China under Grant No 91321310
文摘The evolution of a magnetic domain structure induced by temperature and magnetic field is reported in silicon- doped yttrium iron garnet (YIG) films with perpendicular anisotropy. During a cooling-down procedure from 300K to 7K, a 20% change in the domain width is observed, with the long tails of the stripes being shortened and the twisting stripes being straightened. Under the influence of the stray field of a barium ferrite, the garnet presents an interesting domain structure, which shows an appearance of branching protrusions. The intrinsic mechanisms in these two processes are also discussed.
文摘The microstructure of CdI2 thin film grown during vapor-phase deposition was investigated by scanning electron microscopy (SEM). The thin film deposited on Si crystal consists of numerous sunflower-like aggregates. These aggregates display well self-assembly characteristics. The size of Sunflower-like aggregates is between 12 and 44 μm. Each sunflower-like aggregate is surrounded with many adjacent wings-'petals'. The structure of central region of the 'sunflower' is obviously difFerent from that of the 'petal'. Electron spectroscopy for chemical analysis (ESCA) was employed in determining the chemical valence of the thin film. Self-organization efFect is used to explain the coring growth process of CdI2 thin film
文摘By means of scanning electron microscope(SEM)and high voltage electron microscope(HVEM)we have observed and analysed morphology and micro-structure of silicon oxide film with different thickness formed on(111)silicon monocrystal under dry oxygen atmosphere at 1100℃.Compared with their oxidation kinetic curves consisted of three stages,we suggested a mechanism on forming silicon oxide film.According to electron and X-ray diffraction analyses the silicon oxide films consisted of silica with different crystal structure.We also have discussed a stacking fault and a dislocation formed in the Si-Sio_2 interface region simulaneously forming silicon oxide film.
基金Jiangsu Province key laboratory of thin film with Grant No. K2021.
文摘Fe-N films were prepared on Si substrate by dual ion beam sputtering (DIBS). It is found that the crystal structure of the films varies from α-Fe, to ε-Fe2-3N, ε-Fe2-3N +γ-Fe4N, and finally γ'-Fe4N with the increase in substrate temperature (TS). The magnetic properties of the films were investigated by a vibrating sample magnetometer (VSM). The structure of the films is insensitive to the ratios of N2/Ar in main ion source(MIS), and is mainly influenced by the substrate temperature (Ts).
基金Supported by the National Natural Science Foundation of China under Grant Nos 61076120 and 61106130the Natural Science Foundation and Scientific Support Plan of Jiangsu Province under Grant Nos BK2012516,BK20131072,and BE2012007
文摘CaN films with an AlxGa1-xN/AlyGa1-xN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are studied by optical microscopy, Raman spectroscopy, x-ray diffractometry and atomic force microscopy. The results show that the strain status and crystalline quality of the CaN layers are strongly dependent on the difference of the Al composition between AlxCa1-xN barriers and AlyCa1-yN wells in the SLs. With a large Al composition difference, the CaN film tends to generate cracks on the surface due to the severe relaxation of the SLs. Otherwise, when using a small Al composition difference, the crystalline quality of the CaN layer degrades due to the poor function of the SLs in filtering dislocations. Under an optimized condition that the Al composition difference equals 0.1, the crack-free and compressive strained CaN film with an improved crystalline quality is achieved. Therefore, the AlxGa1-xN/AlyGal-yN SL buffer layer is a promising buffer structure for growing thick CaN films on Si substrates without crack generation.
基金Supported by the National Basic Research Program of China(973 Program)under Grant Nos 2011CBA00106 and2012CB927400the National Natural Science Foundation of China under Grant Nos 11274332 and 11227902Helmholtz Association through the Virtual Institute for Topological Insulators(VITI).M.Y.Li and D.W.Shen are also supported by the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB04040300
文摘By means of oxide molecular beam epitaxy with shutter-growth mode, we fabricate a series of electron-doped (Sr1-xLax)2IrO4 (001) (x=0, 0.05, 0.1 and 0.15) single crystalline thin films and then investigate the doping dependence of the electronic structure utilizing in-situ angle-resolved photoemission spectroscopy. It is found that with the increasing doping content, the Fermi levels of samples progressively shift upward. Prominently, an extra electron pocket crossing the Fermi level around the M point is evidently observed in the 15% nominal doping sample. Moreover, bulk-sensitive transport measurements confirm that the doping effectively suppresses the insulating state with respect to the as-grown Sr2IrO4, though the doped samples still remain insulating at low temperatures due to the localization effect possibly stemming from disorders including oxygen deficiencies. Our work provides another feasible doping method to tune electronic structure of Sr2 IrO4.
基金funded by the Practice and Innovation Funds for Graduate Students of Northwestern Polytechnical University(Grant No.2021201712).
文摘Regulating the surface instability of thin film/substrate structures has been successfully applied to prepare new ductile electronic devices.However,such electronic devices need to be subjected to external loads during operation,which can easily induce delamination of the thin-film electronic device from the substrate.This study aims to investigate the instability characteristics of hard films on flexible substrate surfaces from theoretical analysis and numerical simulation perspectives.Considering finite-thickness substrates,this paper establishes theoretical models for pure bending,bent wrinkle,partial delamination,and total delamination buckling of film/substrate structures based on the nonlinear Euler–Bernoulli beam theory and the principle of minimum energy;then the effects of material and geometric parameters of the structure,interfacial adhesion strength,and pre-strain on the evolutionary path of the four patterns are discussed.The study results show that:the greater Young’s modulus of the substrate is,the larger the parameter region where partial delamination of the film/substrate structure occurs,and the smaller the parameter region where bent wrinkle occurs.By varying Young’s modulus,thickness of the film and substrate,interfacial adhesion coefficient,and pre-strain,the buckling pattern of the structure can be predicted and regulated.The parametric design intervals for each pattern are summarized in the phase diagram.The results of this paper provide theoretical support for the design and reliability evaluation of flexible electronic devices.
文摘A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.
基金R.Jayakrishnan thanks KSCSTE for funding this work under the SPYTiS scheme(Grant No.25/SPYTiS III/2017/KSCSTE)also thanks DoECC,Government of Kerala for supporting the work(Grant No.DoECC/E3/R&D/1751/2017).
文摘Developments of economic systems are critical for bio-regenerative life support systems in manned space missions.In this work we report on the feasibility of using two direct sunlight powered processes sequentially for the recovery of water and nutrients from urine.The work presents experimental evidence on nutrient and water recovery achieved using the proto-type designed and developed.We report the design and testing of a solar still which would serve on the nutrient recovery front.The cooled condensate from the solar still is fed into a solar powered electrolysis unit where nano-structured indium sulphide(In_(2)S_(3))thin films coated over fluorine doped tin oxide(SnO_(2):F)substrate serve as one of the working electrodes.The electrolysis takes place in the absence of an electrolyte which manifests as a technical achievement of our work.Our results show that the COD level in the recycled water is very low.The In_(2)S_(3)photo-electrodes are stable without any physical damage after the process.
基金supported by National Natural Science Foundation of China (Nos.10574047,20490210)China‘973’Plan (No.2006CB921606)
文摘A kinetic Monte Carlo (kMC) simulation is conducted to study the growth of ultrathin film of Co on Cu(001) surface. The many-body, tight-binding potential model is used in the simulation to represent the interatomic potential. The film morphology of heteroepitaxial Co film on a Cu(001) substrate at the transient and final state conditions with various incident energies is simulated. The Co covered area and the thickness of the film growth of the first two layers are investigated. The simulation results show that the incident energy influences the film growth and structure. There exists a transition energy where the interracial roughness is minimum. There are some void regions in the film in the final state, because of the influence of the island growth in the first few layers. In addition, there are deviations from ideal layer-by-layer growth at a coverage from 0 - 2 monolayers (ML).
文摘Single crystal Ga X In 1-X As films have grown up on GaAs(100) substrate at 375℃ and on InP(100) substrate at 390℃, respectively, by the method of rf sputtering with using undoped GaInAs polycrystal as target. However, on Si(100) or Si(111) substrates at 260~390℃, even at 465℃, only polycrystalline films were obtained. In addition, the structure, composition, electrical characteristic and optical properties of the Ga X In 1-X As films were investigated using X ray diffraction (XRD), reflection of high energy electron diffraction (RHEED), energy dispersion analyzer of X ray (EDAX), Hall measurements and spectroscopic ellipsometry.