The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We inve...The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We investigate the polar magneto-optical Kerr effect（MOKE） and carry out the first-order reversal curve（FORC） measurements.For the wedge system,it is observed that the Co thickness could drive the spin reorientation transition（SRT） from out-of-plane to in-plane.Meanwhile,we find the different types of magnetization switchings in the continuous SRT process,which can originate from the formation of different magnetic compositions.Our work provides the possibility of tuning the interfacial effect,and paves the way to analyzing magnetization switching.展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2015CB921403 and 2016YFA0300701)the National Natural Science Foundation of China(Grant Nos.51427801,11374350,and 51671212)
文摘The magnetization switching plays an essential role in spintronic devices.In this study,a Pd（3 nm）/Co（0.14–1.68 nm）/Pd（5 nm） wedge film is deposited on an Mg O（111） substrate by molecular beam epitaxy.We investigate the polar magneto-optical Kerr effect（MOKE） and carry out the first-order reversal curve（FORC） measurements.For the wedge system,it is observed that the Co thickness could drive the spin reorientation transition（SRT） from out-of-plane to in-plane.Meanwhile,we find the different types of magnetization switchings in the continuous SRT process,which can originate from the formation of different magnetic compositions.Our work provides the possibility of tuning the interfacial effect,and paves the way to analyzing magnetization switching.
