In this study,assuming a certain type of wheel loader as the main objective of the research,the performances of the working device of the loader are investigated on the basis of an in-house code.After creating a three...In this study,assuming a certain type of wheel loader as the main objective of the research,the performances of the working device of the loader are investigated on the basis of an in-house code.After creating a three-dimensional model of the working device using Solidworks,this model has been imported into the dynamic simulation software ADAMS,and the simulation problem has been completed by adding the relevant constraints and loadings.The load stress curve relating to the main connecting point of the working device has been obtained in the frame work of this approach and it has been shown that the movement characteristics are compatible with(i.e.,they match)the actual working conditions.The present study may be regarded as a theoretical basis for the design and improvement of the working device of a vast category of wheel loaders.展开更多
In order to shorten the design cycle of the excavator working device, we have proposed a rapid modeling method for the excavator working device which uses parameters. Based on the Pro/toolkit, which is secondary devel...In order to shorten the design cycle of the excavator working device, we have proposed a rapid modeling method for the excavator working device which uses parameters. Based on the Pro/toolkit, which is secondary development tool of Pro/E4.0,and combined with Vs C＋＋2005 programming software. It developed a flexible set of MFC visualization-friendly interfaces. Users can enter data in the visual interface according to their needs and it will generate a new part model quickly. So it improves the design quality, shortens the design cycle, and makes the cost lower significantly.展开更多
It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron curren...It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron current),which was previously misinterpreted as solely a Joule heating effect.We clarify that it is exactly the work done by the electric field force on the moving charges to stimulate the emergence of non-equilibrium carriers,which triggers the novel physical phenomena.As regards to Joule heat,we point out that it should be calculated from Ohm’s law,rather than simply from the product of the current and the electric field.Based on this understanding,we conduct thorough discussion on the role of the electric field force in the process of carrier recombination and carrier generation.The thermal effects of carrier recombination and carrier generation followed are incorporated into the thermal equation of energy.The present study shows that the exothermic effect of carrier recombination leads to a temperature rise at the PN interface,while the endothermic effect of carrier generation causes a temperature reduction at the interface.These two opposite effects cause opposite heat flow directions in the PN junction under forward and backward bias voltages,highlighting the significance of managing device heating phenomena in design considerations.Therefore,this study possesses referential significance for the design and tuning on the performance of piezotronic devices.展开更多
Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick ...Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.展开更多
Left ventricular assist device (LVAD) is being used increasingly in recent years for end stage heart failure as a bridge to transplant (BTT) and also as a destination therapy (DT). Patients with end stage heart failur...Left ventricular assist device (LVAD) is being used increasingly in recent years for end stage heart failure as a bridge to transplant (BTT) and also as a destination therapy (DT). Patients with end stage heart failure have some degree of elevated pulmonary capillary wedge pressure, causing right ventricular hypertrophy which in due course leads to decreased dilatation of the RV and fall in cardiac output & severe tricuspid regurgitation (TR) presenting with features of RV failure (RVF). Implantation of LVAD improves left heart function at the cost of right ventricular output with an incidence of 25%-30%. RVF may lead to impaired LVAD flow, difficulty in weaning from cardio-pulmonary bypass (CPB), decreased tissue perfusion and multi-organ failure. In this article we comprehended the pathophysiology leading to RVF post LVAD implantation and its preoperative predictors and the various treatment modalities for managing RVF post LVAD implantation.展开更多
With the development of the Internet and E commerce, enterprises can achieve global device purchasing with a good cost performance. But the credit risk is the key factor in selecting a device provider. Credit risk in...With the development of the Internet and E commerce, enterprises can achieve global device purchasing with a good cost performance. But the credit risk is the key factor in selecting a device provider. Credit risk involves many qualitative and quantitative factors. We construct a multi agent credit rating model system based on CSCW, which organically combines the people's aptitude and the capability of machines. Enterprises can use this credit rating system for forecasting and defeating the credit risk of global device purchasing.展开更多
基金Natural Science Foundation of Hunan Province(No.2018JJ3478)Scientific Research Fund of Hunan Provincial Education Department(No.15C1240)+1 种基金Innovation platform open fund Project(No.16K080)Shao yang guiding science and technology plan project(2019ZD15).
文摘In this study,assuming a certain type of wheel loader as the main objective of the research,the performances of the working device of the loader are investigated on the basis of an in-house code.After creating a three-dimensional model of the working device using Solidworks,this model has been imported into the dynamic simulation software ADAMS,and the simulation problem has been completed by adding the relevant constraints and loadings.The load stress curve relating to the main connecting point of the working device has been obtained in the frame work of this approach and it has been shown that the movement characteristics are compatible with(i.e.,they match)the actual working conditions.The present study may be regarded as a theoretical basis for the design and improvement of the working device of a vast category of wheel loaders.
文摘In order to shorten the design cycle of the excavator working device, we have proposed a rapid modeling method for the excavator working device which uses parameters. Based on the Pro/toolkit, which is secondary development tool of Pro/E4.0,and combined with Vs C＋＋2005 programming software. It developed a flexible set of MFC visualization-friendly interfaces. Users can enter data in the visual interface according to their needs and it will generate a new part model quickly. So it improves the design quality, shortens the design cycle, and makes the cost lower significantly.
基金the National Natural Science Foundation of China(Nos.12232007,11972164,and 12102141)。
文摘It is discovered that the product of the current and the electric field in a PN junction should be regarded as the rate of work(power)done by the electric field force on moving charges(hole current and electron current),which was previously misinterpreted as solely a Joule heating effect.We clarify that it is exactly the work done by the electric field force on the moving charges to stimulate the emergence of non-equilibrium carriers,which triggers the novel physical phenomena.As regards to Joule heat,we point out that it should be calculated from Ohm’s law,rather than simply from the product of the current and the electric field.Based on this understanding,we conduct thorough discussion on the role of the electric field force in the process of carrier recombination and carrier generation.The thermal effects of carrier recombination and carrier generation followed are incorporated into the thermal equation of energy.The present study shows that the exothermic effect of carrier recombination leads to a temperature rise at the PN interface,while the endothermic effect of carrier generation causes a temperature reduction at the interface.These two opposite effects cause opposite heat flow directions in the PN junction under forward and backward bias voltages,highlighting the significance of managing device heating phenomena in design considerations.Therefore,this study possesses referential significance for the design and tuning on the performance of piezotronic devices.
文摘Ferroelectric materials have many interesting physical properties such as ferroelectricity, pyroelectricity, piezoelectricity, and opto-electricity, and applying ferroelectric materials in the forms of thin and thick films and integrating them on the silicon substrate as electronic and MEMS devices is a very attractive research area and challenging. In this paper, we report our research works on ferroelectric MEMS and ferroelectric films for electronic device applications. Pyroelectric thin film infrared sensors have been made, characterized, and a 32×32 array with its size of 1cm×1cm has been obtained on Si membrane. Ferroelectric thin films in amorphous phase have been applied to make silicon based hydrogen gas sensors with the metal/amorphous ferroelectric film/metal device structure, and its turn-on voltage of about 4.5V at ～1000 ppm in air is about 7 times of the best value reported in the literature. For the application of electron emission flat panel display, ferroelectric BST thin films with excess Ti concentrations have been coated on Si tips, the threshold voltage of those ferroelectric film coated tips has been reduced about one order from ～70 V/μm to 4～10 V/μm for different Ti concentrations, and however, the electron emission current density has been increased at least 3～4 order for those coated tips compared to that of the bare Si tips. To fulfill in the thickness gap between thin film of typical ～1 μm made by PVD/CVD and polished ceramic wafer of ～50 μm from the bulk, piezoelectric films with thickness in a range of 1～30 μm have been successfully deposited on Si substrate at a low temperature of 650oC by a novel hybridized deposition technique, and piezoelectric MEMS ultrasonic arrays have been very recently obtained with the sound pressure level up to ～120 dB. More detailed results will be presented and mechanisms will be discussed.
文摘Left ventricular assist device (LVAD) is being used increasingly in recent years for end stage heart failure as a bridge to transplant (BTT) and also as a destination therapy (DT). Patients with end stage heart failure have some degree of elevated pulmonary capillary wedge pressure, causing right ventricular hypertrophy which in due course leads to decreased dilatation of the RV and fall in cardiac output & severe tricuspid regurgitation (TR) presenting with features of RV failure (RVF). Implantation of LVAD improves left heart function at the cost of right ventricular output with an incidence of 25%-30%. RVF may lead to impaired LVAD flow, difficulty in weaning from cardio-pulmonary bypass (CPB), decreased tissue perfusion and multi-organ failure. In this article we comprehended the pathophysiology leading to RVF post LVAD implantation and its preoperative predictors and the various treatment modalities for managing RVF post LVAD implantation.
文摘With the development of the Internet and E commerce, enterprises can achieve global device purchasing with a good cost performance. But the credit risk is the key factor in selecting a device provider. Credit risk involves many qualitative and quantitative factors. We construct a multi agent credit rating model system based on CSCW, which organically combines the people's aptitude and the capability of machines. Enterprises can use this credit rating system for forecasting and defeating the credit risk of global device purchasing.
