On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases

In this work, a dislocation-related tunneling leakage current model is developed to explain the temperature-dependent reverse current–voltage（I–V –T） characteristics of a Schottky barrier diode fabricated on free-standing GaN substrate for reverse-bias voltages up to-150 V. The model suggests that the reverse leakage current is dominated by the direct tunneling of electrons from Schottky contact metal into a continuum of states associated with conductive dislocations in GaN epilayer.A reverse leakage current ideality factor, which originates from the scattering effect at metal/GaN interface, is introduced into the model. Good agreement between the experimental data and the simulated I–V curves is obtained.

GaN-based violet laser diodes grown on free-standing GaN substrate

A violet laser diode （LD） structure is grown on a free-standing c-plane GaN substrate and 4 μm×800μm ridge waveguide LDs are fabricated. The electrical and the optical characteristics of LDs under different facet-coating and chip-mounting conditions are investigated under pulse mode operation. The active region temperatures of p-side up and p-side down mounted LDs are calculated with different injection currents. The calculated thermal resistances of p-side up and p-side down mounted LDs are 4.6 K/W and 3 K/W, respectively. The threshold current of the p-side down mounted LD is much lower than that of the p-side up mounted LD. The blue shift of the emission wavelength with increasing injection current is observed only for the LD with p-side down mounting configuration, due to the more efficient heat dissipation.

Facile integration of an Al-rich Al_(1-x)In_(x)N photodetector on free-standing GaN by radio-frequency magnetron sputtering

Al_(1-x)In_(x)N, a Ⅲ-nitride semiconductor material, is currently of great research interest due to its remarkable physical properties and chemical stability. When the Al and In compositions are tuned, its band-gap energy varies from 0.7 eV to 6.2 eV, which shows great potential for application in photodetectors. Here, we report the fabrication and performance evaluation of integrated Al_(1-x)In_(x)N on a free-standing GaN substrate through direct radio-frequency magnetron sputtering.The optical properties of Al_(1-x)In_(x)N will be enhanced by the polarization effect of a heterostructure composed of Al_(1-x)In_(x)N and other Ⅲ-nitride materials. An Al_(1-x)In_(x)N/Ga N visible-light photodetector was prepared by semiconductor fabrication technologies such as lithography and metal deposition. The highest photoresponsivity achieved was 1.52 A·W^(-1)under 365 nm wavelength illumination and the photodetector was determined to have the composition Al0.75In0.25N/GaN.A rise time of 0.55 s was observed after transient analysis of the device. The prepared Al_(1-x)In_(x)N visible-light photodetector had a low dark current, high photoresponsivity and fast response speed. By promoting a low-cost, simple fabrication method,this study expands the application of ternary alloy Al_(1-x)In_(x)N visible-light photodetectors in optical communication.

二维GaN中带电缺陷性质的第一性原理研究

带电缺陷形成能与电荷转移能级对探索材料中n-type或p-type掺杂具有重要指导意义.基于第一性原理方法,本文结合二维带电缺陷校正理论,将半局域泛函电荷转移能级有效转换到杂化泛函精度,对六方二维氮化镓(Hexagonal gallium nitride,h-_(Ga)N)12种n-type和p-type带电掺杂体系结构性质、磁学性质及缺陷性质进行系统研究.n-type体系包括C_(Ga),Si_(Ga),Ge_(Ga),O_(N),S_(N),Se_(N),p-type体系包括Be_(Ga),Mg_(Ga),Ca_(Ga),C_(N),Si_(N),Ge_(N),结果表明Ge_(Ga)和Be_(Ga)分别是n-type和p-type中最稳定缺陷.n-type体系最稳定价态为0和1+价,施主离子化能分布在低于导带底~0.4到~0.6 eV能量区间,表现为深施主能级特性,会捕获p型h-GaN中空穴,影响空穴导电率;p-type体系最稳定价态为1-,0(Ge_(N)除外),1+价,受主离子化能分布在高于价带顶~1.25到2.85 eV能量区间,表现为深受主能级特性,会捕获n(p)型h-GaN中电子(空穴),影响n(p)载流子导电率.研究结果表明,二维h-GaN体系很难通过单缺陷实现n或p-type掺杂,实验上需要考虑复合缺陷实现双极型掺杂.

From 0D to 3D:Hierarchical structured high-performance free-standing silicon anodes based on binder-induced topological network architecture

Free-standing silicon anodes with high proportion of active materials have aroused great attention;however,the mechanical stability and electrochemical performance are severely suppressed.Herein,to resolve the appeal issues,a free-standing anode with a"corrugated paper"shape on micro-scale and a topological crosslinking network on the submicron and nano-scale is designed.Essentially,an integrated three-dimensional electrode structure is constructed based on robust carbon nanotubes network with firmly anchored SiNPs via forming interlocking junctions.In which,the hierarchical interlocking structure is achieved by directional induction of the binder,which ensures well integration during cycling so that significantly enhances mechanical stability as well as electronic and ionic conductivity of electrodes.Benefiting from it,this anode exhibits outsta nding performance under harsh service conditions including high Si loading,ultrahigh areal capacity(33.2 mA h cm^(-2)),and high/low temperatures(-15-60℃),which significantly extends its practical prospect.Furthermore,the optimization mechanism of this electrode is explored to verify the crack-healing and structure-integration maintaining along cycling via a unique self-stabilization process.Thus,from both the fundamental and engineering views,this strategy offers a promising path to produce high-performance free-standing electrodes for flexible device applications especially facing volume effect challenges.

In Situ Mineralization of Biomass-Derived Hydrogels Boosts Capacitive Electrochemical Energy Storage in Free-Standing 3D Carbon Aerogels

Here,a novel fabrication method for making free-standing 3D hierarchical porous carbon aerogels from molecularly engineered biomass-derived hydrogels is presented.In situ formed flower-like CaCO_(3)molecularly embedded within the hydrogel network regulated the pore structure during in situ mineralization assisted one-step activation graphitization(iMAG),while the intrinsic structural integrity of the carbon aerogels was maintained.The homogenously distributed minerals simultaneously acted as a hard template,activating agent,and graphitization catalyst.The decomposition of the homogenously distributed CaCO_(3)during iMAG followed by the etching of residual CaO through a mild acid washing endowed a robust carbon aerogel with high porosity and excellent electrochemical performance.At 0.5 mA cm^(-2),the gravimetric capacitance increased from 0.01 F g^(-1)without mineralization to 322 F g^(-1)with iMAG,which exceeds values reported for any other free-standing or powder-based biomass-derived carbon electrodes.An outstanding cycling stability of~104%after 1000 cycles in 1 M HClO4 was demonstrated.The assembled symmetric supercapacitor device delivered a high specific capacitance of 376 F g^(-1)and a high energy density of 26 W h kg^(-1)at a power density of 4000 W kg^(-1),with excellent cycling performance(98.5%retention after 2000 cycles).In combination with the proposed 3D printed mold-assisted solution casting(3DMASC),iMAG allows for the generation of free-standing carbon aerogel architectures with arbitrary shapes.Furthermore,the novel method introduces flexibility in constructing free-standing carbon aerogels from any ionically cross-linkable biopolymer while maintaining the ability to tailor the design,dimensions,and pore size distribution for specific energy storage applications.

Roughening surface morphology on free-standing GaN membrane with laser lift-off technique

An ultraviolet (UV) laser lift-off (LLO) technique was presented to form a roughened surface morphol-ogy on GaN membrane grown by metalorganic chemical vapor deposition (MOCVD). The etched sur-face showed cone-like structures on a free-standing GaN membrane. Based on the scanning electron microscopy (SEM) and atom force microscopy (AFM) measurements, the etching mechanism was proposed, which was related to the different decomposition depth caused by the dislocations in the GaN membrane. The etching efficiency and morphology of GaN by the LLO technique and the photo-electrochemical (PEC) wet etching technique was compared and analyzed. This roughed cone-like surface morphology by LLO can enhance the external efficiency of vertical structure n-side-up GaN-based light-emitting diodes (LEDs) simultaneously while being released of the performance con-strains impeded by sapphire.

Flexible free-standing graphene-like film electrode for supercapacitors by electrophoretic deposition and electrochemical reduction

Electrophoretic deposition in conjunction with electrochemical reduction was used to make flexible free-standing graphene-like films. Firstly, graphene oxide （GO） film was deposited on graphite substrate by electrophoretic deposition method, and then reduced by subsequent electrochemical reduction of GO to obtain reduced GO （ERGO） film with high electrochemical performance. The morphology, structure and electrochemical performance of the prepared graphene-like film were confirmed by SEM, XRD and FT-IR. These unique materials were found to provide high specific capacitance and good cycling stability. The high specific capacitance of 254 F/g was obtained from cyclic voltammetry measurement at a scan rate of 10 mV/s. When the current density increased to 83.3 A/g, the specific capacitance values still remained 132 F/g. Meanwhile, the high powder density of 39.1 kW/kg was measured at energy density of 11.8 W-h/kg in 1 mol/L H2SO4 solution. Furthermore, at a constant scan rate of 50 mV/s, 97.02% of its capacitance was retained for 1000 cycles. These promising results were attributed to the unique assembly structure of graphene film and low contact resistance, which indicated their potential application to electrochemical capacitors.

0.2~2.0GHz100W超宽带GaN功率放大器

设计并实现了一款基于0.25μm GaN高电子迁移率晶体管(HEMT)工艺的100 W超宽带功率放大器。基于SiC无源工艺设计了集成无源器件(IPD)输入预匹配电路芯片;设计了基于陶瓷基片的T型集成输出预匹配电路;基于建立的传输线变压器(TLT)的精确模型,设计了宽带阻抗变换器,在超宽频带内将50Ω的端口阻抗变换至约12.5Ω,再通过多节微带电路与预匹配后的GaN HEMT芯片实现阻抗匹配。最终,以较小的电路尺寸实现了功率放大器的超宽带性能指标。测试结果表明,功率放大器在0.2~2.0 GHz频带内,在漏极电压36 V、输入功率9 W、连续波的工作条件下,输出功率大于103 W,漏极效率大于50%,输入电压驻波比(VSWR)≤2.5。

VHF频段小型化千瓦级GaN功率放大器

为了满足VHF频段对高功率放大器小型化的需求,设计并制备了一款基于05μm GaN高电子迁移率晶体管(HEMT)工艺的VHF频段小型化千瓦级功率放大器。通过采用多节微带电容网络和高介电常数的印制电路板(PCB)实现了末级功率放大器匹配电路的小型化;以高通滤波器作为级间匹配电路,在减小电路尺寸的同时,提高了链路增益;采用混合集成工艺,实现了电源调制器、前级驱动功率放大器和末级功率放大器等各单元的小型化高密度集成。测试结果表明,在024~030 GHz频带内,该功率放大器的工作电压为50 V,工作脉宽为100μs,在占空比10%、输入功率10 dBm的工作条件下,带内输出功率大于1000 W,功率附加效率约为60%~69%,功率增益大于50 dB,功放体积为46 mm×30 mm×6 mm。

InGaN/GaN量子阱悬空微盘发光二极管

设计并制备了三种不同结构的电泵浦InGaN/GaN量子阱微盘发光器件,对其光增益和光损耗进行了分析和优化。以p型层的结构为分类标准,器件Ⅰ为圆柱形;器件Ⅱ为器件Ⅰ的悬空结构;器件Ⅲ是悬空的圆环形结构。实验和仿真结果表明,三种器件结构中,器件Ⅱ的结果最好。电极布局为内p外n型的圆柱形器件表面电流分布能够保证发光区和微腔高增益区重合,悬空结构能够降低微盘在垂直方向上的光损耗,有利于更好的光学增益。考虑到共振模式,器件Ⅱ在注入电流大于0.7 mA时,器件Ⅱ实现了峰值波长为408.2 nm、半峰宽为2.62 nm的振荡模式输出。这种电泵浦InGaN/GaN量子阱悬浮微盘二极管器件的设计思路对电泵浦微盘或微环激光器的研制具有重要参考意义。

石墨烯插入层对蓝宝石上GaN材料的应力调制

较大的晶格失配和热失配使得异质外延生长的GaN材料具有很高的残余应力,对材料和器件的性能产生重要影响。在蓝宝石衬底和GaN外延层之间插入一层石墨烯,通过Raman光谱和弯曲度测试分析了石墨烯插入层对GaN材料应力的影响。Raman测试结果表明,蓝宝石衬底上GaN材料压应力为0.56 GPa,引入石墨烯插入层后GaN材料压应力为0.08 GPa。弯曲度测试结果表明无石墨烯插入层的蓝宝石上GaN材料弯曲度约为21.74μm,引入石墨烯插入层后弯曲度约为1.39μm,引入石墨烯插入层的GaN材料弯曲度显著降低。讨论了石墨烯插入层对蓝宝石上GaN材料的应力调制机制,验证了石墨烯插入层技术对于异质衬底上获得完全弛豫GaN外延层的可行性。

大尺寸GaN微波材料范德瓦耳斯外延机理及应力调控研究

本文基于金属有机化学气相沉积(MOCVD)技术,以少层氮化硼(BN)作为插入层在4英寸蓝宝石衬底上开展范德瓦耳斯异质外延GaN微波材料的生长机理及应力调控方面的研究,探讨了AlN成核工艺对GaN缓冲层生长机制的影响,以及与材料晶体质量、应力及电学性能等之间的关联。提出了一种基于AlN/AlGaN复合成核技术的应力调控方案,首次实现了大尺寸范德瓦耳斯(vdW)异质外延材料应力的有效管控,研制的GaN微波材料的弯曲度(Bow)为+20.4μm,(002)/(102)面半峰全宽为471.6/933.5 arcsec,表面均方根粗糙度为0.52 nm,电子迁移率达到2000 cm^(2)/(V·s)。最后,基于机械剥离实现了大尺寸晶圆级GaN微波材料与蓝宝石衬底的分离,为高导热衬底转移提供便利,为大功率射频器件的制作创造条件。

GAN与Diffusion在传统纹样设计中的实验研究

传统纹样是中国优秀传统文化的重要组成部分,传统人工设计已经无法满足纹样的现代设计需求,生成式AI为传统纹样设计提供了新的设计路径和方法。文章将生成式AI应用于传统纹样设计中,通过适配实验优选基于GAN的Style GAN和基于Diffusion的Stable Diffusion两种主流图像生成模型进行实验,采用技术分析与艺术分析相结合,对实验结果进行多角度、多维度对比分析,为设计师选择生成设计方法提供参照。实验结果表明,两个模型均能满足基本的艺术设计需求。Style GAN模型生成的纹样图像更接近真实图像的分布,具有更高的图像质量和多样性;Stable Diffusion模型能较好地传承传统纹样的基因,艺术性与创造性兼具,更加符合传统纹样的艺术设计需求。

表面电荷密度及介电常数对AlGaN/GaN异质结中二维电子气性质的影响

通过在Al_(x)Ga_(1-x)N层引入离化电荷面密度,结合自发极化和压电极化引起的极化电荷面密度,利用变分法计算二维电子气面密度随Al组分和Al_(x)Ga_(1-x)N厚度的变化关系.研究了相对介电常数对电子气密度的影响,并与实验数据进行了比较.通过在Al_(x)Ga_(1-x)N的相对介电常量中引入高阶项,使得计算结果更好地拟合了高Al组分的电子气密度.计算得到的离化电荷面电荷密度与极化电荷面电荷密度相当,从而证明离化面电荷密度对二维电子气形成的贡献.

基于GaN器件与磁集成技术的车载充电机实验平台研究

随着新能源汽车的普及,对车载充电机的要求越来越高。为了有效提升整机效率和功率密度,将GaN器件与磁集成技术应用于车载充电机,进行了实验平台研究。基于GaN器件设计了两级式车载充电机拓扑结构与外围电路,通过制作磁集成平面变压器,优化了CLLC变换器,完成了整机控制程序设计及2kW车载充电机实验样机搭建,并对样机进行了实验测试与波形分析。实验结果表明,实验样机具有良好的稳态特性与动态特性,整机功率因数在0.98以上,满载峰值效率达到95.22%。该平台能够帮助学生加深对电力电子技术的认识,掌握新型电力电子器件的特性及应用,锻炼实践操作能力,提高相关课程的教学质量。

低成本高结晶GaN纳米线柔性薄膜制备及其场发射性能

旨在探究非贵金属Cu替代贵金属Au作为催化剂在柔性碳膜上制备高结晶的GaN纳米线的可行性,并研究其场发射特性及机理。采用非贵金属Cu替代贵金属Au作为催化剂,在柔性碳膜上制备了直径为20~100 nm、长度为3~15μm的高结晶的GaN纳米线,并通过工艺参数对其结构与尺寸进行调控,得到GaN纳米线薄膜的催化生长机制。通过对其场发射特性进行研究,发现其场发射性能与其纳米结构紧密相关,催化剂厚度以及薄膜弯曲状态可显著影响其场发射性能。结果表明,采用Cu作为催化剂所制备的GaN纳米线柔性薄膜的场发射电流具有较好的稳定性。该研究为GaN纳米线的低成本制备方法提供了可借鉴思路,同时也为场发射柔性器件的制作提供了可行的技术手段。

GaN HEMT源漏通道区电阻的自热和准饱和效应模型

GaN HEMT在栅极与源极和漏极之间存在一段通道区域,在等效电路模型中通常等效为一电阻,称为源漏通道区电阻R_(D,S)。准确构建GaN HEMT R_(D,S)模型,对于分析GaN HEMT直流和射频特性,构建GaN HEMT大信号模型具有十分重要的意义。本研究给出考虑自热和准饱和效应的R_(D,S)模型。首先由源漏通道区温度T_(CH)与耗散功率P_(diss)的关系,推导出非线性自热效应模型。进一步基于准饱和效应和Trofimenkoff模型,给出源漏通道区电子漂移速度与电场强度的关系表达式,构建非线性R_(D,S)模型。在环境温度Tamb=300~500 K时,源漏通道区二维电子气2DEG面密度n_(S,acc)(T_(CH))和迁移率μ_(acc)(T_(CH))随T_(CH)的升高而下降,这导致低偏置条件下的源漏通道区电阻R_(D0,S0)随T_(CH)呈非线性增长。将本研究和文献报道的R_(D,S)模型与TCAD(Technology Computer Aided Design)仿真数据进行对比,结果显示:本研究与文献报道的漏通道区电阻RD模型的平均相对误差分别为0.32%和1.78%,均方根误差(RMSE)分别为0.039和0.20Ω;RS模型的平均相对误差分别为0.76%和1.73%,RMSE分别为0.023和0.047Ω。与文献报道的实验数据进行对比,结果显示:本研究与文献RD模型的平均相对误差分别为0.91%和1.59%,RMSE分别为0.012和0.015Ω;RS平均相对误差分别为1.22%和2.77%,RMSE分别为0.0015和0.0034Ω。本研究提出的R_(D,S)模型具有更低的平均相对误差和均方根误差,能够更加准确地表征GaN HEMT线性工作区R_(D,S)随漏源电流I_(DS)的变化。可将本模型用于器件的设计优化,也可作为Spice模型用于电路仿真。

基于图像小波域自适应干扰的GAN生成人脸反取证

针对现有生成对抗网络(GAN)生成人脸反取证方法攻击迁移性不强的问题,提出了一个基于图像小波域自适应干扰的GAN生成人脸反取证方法以提升攻击迁移性.该方法通过对GAN生成人脸图像的小波域信息(即图像经过小波分解后的频率分量)施加扰动以实现其对取证模型的抵抗,并且分别在空域和频域上基于最小可觉察误差(JND)设计自适应扰动阈值,对图像不同像素点位置设置不同的扰动强度,从而增强扰动的人眼不可感知性.此外,还设计了一种数据增强方式对反取证人脸进行数据分布多样性扩充,以进一步提升攻击迁移性.实验结果表明,与6种基线方法相比,所提方法生成的反取证人脸在保证扰动对人眼不可感知前提下具有更强的攻击迁移性.

一种L波段300W GaN脉冲功率模块

随着第三代半导体GaN器件技术的不断发展,GaN高电子迁移率晶体管(HEMT)在电子系统中逐步得到了广泛应用。研制了一款小型化L波段300 W GaN脉冲功率模块。研发了满足高压脉冲工作条件的GaN HEMT芯片,采用负载牵引技术进行了器件大信号阻抗参数提取,并以此为基础设计了小型化匹配网络进行阻抗变换。基于高压驱动芯片和开关器件芯片设计了小型化高压脉冲调制电路。测试结果表明,在工作频率990~1130 MHz、工作电压50 V、脉冲宽度100μs、占空比10%下,功率模块脉冲输出功率大于300 W,功率附加效率大于53%,功率增益大于38 dB。功率模块尺寸为30 mm×30 mm×8 mm。