Effects of Material and Dimension on TCF,Frequency,and Q of Radial Contour Mode AlN-on-Si MEMS Resonators

This paper investigates the effects of material and dimension parameters on the frequency splitting,frequency drift,and quality factor(Q)of aluminium nitride(AlN)-on-n-doped/pure silicon(Si)microelectromechanical systems(MEMS)disk resonators through analysis and simulation.These parameters include the crystallographic orientation,dopant,substrate thickness,and temperature.The resonators operate in the elliptical,higher order,and flexural modes.The simulation results show that i)the turnover points of the resonators exist at 55°C,-50°C,40°C,and-10°C for n-doped silicon with the doping concentration of 2×1019 cm-3 and the Si thickness of 3.5μm,and these points are shifted with the substrate thickness and mode variations;ii)compared with pure Si,the modal-frequency splitting for n-doped Si is higher and increases from 5%to 10%for all studied modes;iii)Q of the resonators depends on the temperature and dopant.Therefore,the turnover,modal-frequency splitting,and Q of the resonators depend on the thickness and material of the substrate and the temperature.This work offers an analysis and design platform for high-performance MEMS gyroscopes as well as oscillators in terms of the temperature compensation by n-doped Si.

AlN-based surface acoustic wave resonators on platinum bottom electrodes for high-temperature sensing applications

Surface acoustic wave（SAW） resonators with Pt/AlN/Si and Pt/AlN/Pt/Si configurations were fabricated by lift-off photolithography techniques. High-temperature performances of both configurations were investigated for temperature sensor applications. AlN films grown on Ptcoated Si substrates exhibit a lower（002） preferred orientation than those grown on Si substrates. The center frequencies of Pt/AlN/Si and Pt/AlN/Pt/Si configurations at room temperature are 424.1 and 456.4 MHz, respectively.The SAW was limited by Pt bottom electrodes to propagate in AlN layer. The temperature coefficient of frequency（TCF） values of Pt/AlN/Si and Pt/AlN/Pt/Si configurations are-51.6 × 10^-6 and-69.2 × 10^-6℃^-1, respectively.Compared with that of Pt/AlN/Si configuration, the TCF value of Pt/AlN/Pt/Si configuration decreases by 34.1 %.AlN resonator with the Pt floating bottom electrodes provides a large, quasi-constant temperature sensitivity which is suitable for temperature sensor applications.

Temperature dependent behaviors of electro-elastic properties of NdCa_(4)O(BO_(3))_(3)crystal with monoclinic symmetry

Rare-earth calcium oxyborate crystals(RECa_(4)O(BO_(3))_(3),RECOB,RE:rare-earth elements)are a kind of multifunctional crystal materials.In this work,the temperature dependent behaviors of the electroelastic constants of NdCOB crystal were investigated over the temperature range of-80-200℃,and their temperature coefficients were evaluated.It is found that NdCOB crystal possesses minimal variation of relative dielectric permittivities(<3%).The temperature coefficient of frequency for ZY cut with width shear vibration mode is in the order of 0.07×10^(-4)/℃.The temperature coefficients of the elastic compliances are obtained to be in the range of-33.0×10^(-4)/℃-32.2×10^(-4)/℃.Particularly,the sand swere found to show low temperature coefficients of the elastic compliances,i.e.1.0×10^(-4)/℃and-0.4×10^(-4)/℃,respectively,indicating the existence of zero temperature coefficient of frequency crystal cut.Furthermore,the electromechanical coupling factors and piezoelectric coefficients as a function of temperature were studied.The electromechanical coupling factor kand piezoelectric coefficient dare determined to be~30.8%and~15.2 pC/N at room temperature,respectively.The large piezoelectric response and zero temperature coefficient of frequency indicate the potential usage of NdCOB crystal for piezoelectric frequency devices over a wide temperature range.

Sintering behaviour and microwave dielectric properties of MgO-2B_(2)O_(3)--xwt%BaCu(B_(2)O_(5))-ywt%H_(3)BO_(3) ceramics

This study investigates the bulk density,sintering behaviour,and microwave dielectric properties of the MgO-2B_(2)O_(3) series ceramics synthesised by solid-state reaction.According to the X-ray diffraction and microstructural analyses,the as-prepared MgO-2B_(2)O_(3) ceramics possess a single-phase structure with a rod-like morphology.The effects of different quantities of H_(3)BO_(3) and BaCu(B_(2)O5)(BCB)on the bulk density,sintering behaviour,and microwave dielectric properties of the MgO-2B_(2)O_(3) ceramics were investigated.Accordingly,the optimal sintering temperature was obtained by adding 30 wt%H_(3)BO_(3) and 8 wt%BCB.We also reduced the sintering temperature to 825°C.Furthermore,the addition of 40 wt%H_(3)BO_(3) and 4 wt%BCB increased the quality factor,permittivity,and temperature coefficient of resonance frequency of MgO-2B_(2)O_(3) to 44,306 GHz(at 15 GHz),5.1,and-32 ppm/℃,respectively.These properties make MgO-2B_(2)O_(3) a viable low-temperature co-fired ceramic with broad applications in microwave dielectrics.