This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose ...This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.展开更多
利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°...利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°。表明此生长方法经优化,可生长出单晶质量很好的 ZnO/Si 薄膜。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 50775209 and 50730009)
文摘This paper discusses the I-V property of the GaAs-based resonant tunnelling structure （RTS） under external uniaxial pressure by photoluminescence studies. Compressive pressure parallel to the [110] direction, whose value is determined by Hooke＇s law, is imposed on the sample by a helix micrometer. With the increase of the applied external uniaxial compressive pressure, the blue shift and splitting of the luminescence peaks were observed, which have some influence on the I-V curve of RTS from the point of view of the energy gap, and the splitting became more apparent with applied pressure. Full width at half maximum broadening could also be observed.
文摘利用 X 射线衍射(XRD),X 射线摇摆曲线(XRC)和 X 射线光电子能谱(XPS)分析方法对氧离子束辅助激光淀积生长的 ZnO/Si 异质结薄膜进行了分析。结果表明:用该法可生长出高度 c 轴单一取向 ZnO 薄膜,XRC 的半高宽度(FWHM)仅为2.918°。表明此生长方法经优化,可生长出单晶质量很好的 ZnO/Si 薄膜。
