Time-resolved photoluminescence （TRPL） was applied to investigate the transient process in GaP1-xNx （x = 0.12%） alloy. The filling, transferring and decay processes among nitrogen pairs are directly observed. The ...Time-resolved photoluminescence （TRPL） was applied to investigate the transient process in GaP1-xNx （x = 0.12%） alloy. The filling, transferring and decay processes among nitrogen pairs are directly observed. The NN4 pair, either not present or only a small obscure peak under a proper excitation condition in the steady-state photoluminescence spectrum, is well resolved by TRPL.展开更多
The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is fo...The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 60276002.
文摘Time-resolved photoluminescence （TRPL） was applied to investigate the transient process in GaP1-xNx （x = 0.12%） alloy. The filling, transferring and decay processes among nitrogen pairs are directly observed. The NN4 pair, either not present or only a small obscure peak under a proper excitation condition in the steady-state photoluminescence spectrum, is well resolved by TRPL.
基金Supported by the National Natural Science Foundation of China under Grant No 10334040, the Special Fund for Major State Basic Research Project of China under Grant No G001CB3095.
文摘The nonradiative recombination effect on carrier dynamics in GalnNAs/GaAs quantum wells is studied by timeresolved photoluminescence （TRPL） and polarization-dependent TRPL at various excitation intensities. It is found that both recombination dynamics and spin relaxation dynamics strongly depend on the excitation intensity. Under moderate excitation intensities the PL decay curves exhibit unusual non-exponential behaviour. This result is well simulated by a rate equation involving both the radiative and non-radiative recombinations via the introduction of a new parameter of the effective concentration of nonradiative recombination centres in the rate equation. In the spin dynamics study, the spin relaxation also shows strong excitation power dependence. Under the high excitation power an increase of spin polarization degree with time is observed. This new finding provides a useful hint that the spin process can be controlled by excitation power in GaInNAs systems.
