The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectros...The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.展开更多
基金Founded by the National Key Research and Development Program(No.2021YFB3802400)the National Natural Science Foundation of China(No.52161037)the Basic Research Project of Yunnan Province(No.202001AU070112)。
文摘The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.
