Measuring the growth parameters of Ge quantum dots （QDs） embedded in SiO2/Si hetero-structure is pre- requisite for developing the optoelectronic devices such as photovoltaics and sensors. Their optical properties c...Measuring the growth parameters of Ge quantum dots （QDs） embedded in SiO2/Si hetero-structure is pre- requisite for developing the optoelectronic devices such as photovoltaics and sensors. Their optical properties can be tuned by tailoring the growth morphology and structures, where the growth parameters＇ optimizations still need to be explored. We determine the effect of annealing temperature on surface morphology, structures and optical properties of Ge//SiO2//Si hetero-structure. Samples are grown via rf magnetron sputtering and subsequent characterizations are made using imaging and spectroscopic techniques.展开更多
基金Supported by the Advanced Membrane Technology Research Center of the Universities Teknologi Malaysia under Grant No R.J130000.7609.4C112the Postdoctoral Grantthe Frontier Materials Research Alliance
文摘Measuring the growth parameters of Ge quantum dots （QDs） embedded in SiO2/Si hetero-structure is pre- requisite for developing the optoelectronic devices such as photovoltaics and sensors. Their optical properties can be tuned by tailoring the growth morphology and structures, where the growth parameters＇ optimizations still need to be explored. We determine the effect of annealing temperature on surface morphology, structures and optical properties of Ge//SiO2//Si hetero-structure. Samples are grown via rf magnetron sputtering and subsequent characterizations are made using imaging and spectroscopic techniques.
