Er^(3+)-doped and Yb^(3+)/Er^(3+) co-doped Gd_(3)Sc_(2)Ga_(3)O_(12) (abbreviated as Er:GSGG and Yb,Er:GSGG,respectively)laser crystals are investigated by using a combination of spectroscopic measurements and thermal ...Er^(3+)-doped and Yb^(3+)/Er^(3+) co-doped Gd_(3)Sc_(2)Ga_(3)O_(12) (abbreviated as Er:GSGG and Yb,Er:GSGG,respectively)laser crystals are investigated by using a combination of spectroscopic measurements and thermal characterizations.An absorption peak of Yb,Er:GSGG crystal shifts to 970nm and its absorption band broadens obviously,which makes the crystal suitable for pumping by a 970nm laser diode (LD).This crystal also exhibits a shorter lifetime of a lower laser level,a larger emission cross section and higher thermal conductivity than those of Er:GSGG.All these factors suggest that Yb^(3+)/Er^(3+) co-doping has a positive effect on improving the spectroscopic and thermal performances in GSGG based laser crystals,and imply that double-doped Yb,Er:GSGG crystal is a potential candidate as an excellent LD pumped 2.79 μm laser material.展开更多
During the crystal growth of Nd,Cr∶GSGG by Czochralski method,in some cases eutectic reaction occurred in the nether region of the crystal,and the boule was divided into two obvious different parts,which is upper Nd...During the crystal growth of Nd,Cr∶GSGG by Czochralski method,in some cases eutectic reaction occurred in the nether region of the crystal,and the boule was divided into two obvious different parts,which is upper Nd,Cr∶GSGG crystal and the nether coexisting Nd,Cr∶GSGG and GdScO_(3).By X-ray powder diffraction,the structure change of NdCr∶GSGG crystal ofΦ27 mm×120 mm with eutectic along its grown direction<111>was studied.By the least square method and extrapolation function f=sinθ-sinθ^(1-t)(t is an adjustable parameter),the lattice parameters of Nd,Cr∶GSGG and additional GdScO_(3)phase were computed.The results indicate that the lattice parameters of Nd,Cr∶GSGG increase along its growth direction,which changes from a=(1.25650±0.00007)nm of the top to(1.25798±0.00010)nm of the bottom.In the process of Nd,Cr∶GSGG growth,Gd^(3+)in Nd,Cr∶GSGG is partly replaced by Nd^(3+)with larger ionic radii,and the volatilization of Ga component results in its composition variance,which cause the lattice parameters increase along growth direction.In the eutectic section,there are the Nd,Cr∶GSGG and the second phase orthorhombic GdScO_(3).The lattice parameters of GdScO_(3)are a=0.5443±0.0007,b=0.5699±0.0005 and c=(0.7865±0.0009)nm,and that of Nd,Cr∶GSGG is(1.25798±0.00010)nm.In the final growth stage,excessive volatilization of Ga composition during the crystal growth causes the growth melt deflect of the Nd,Cr∶GSGG solid solution range seriously,and results in the eutectic reaction,and the outgrowth of Nd,Cr∶GSGG and GdScO_(3).So it is necessary to decrease the effect of gallium volatilization during the growth in order to avoid eutectic growth and obtain a high-quality Nd,Cr∶GSGG.展开更多
This paper explores a new laser working material: gallium scandium gadolinium(GSGG), which was successfully prepared by one step co-precipitation method, and the potential properties of this Nd^3+ doped laser ceramic ...This paper explores a new laser working material: gallium scandium gadolinium(GSGG), which was successfully prepared by one step co-precipitation method, and the potential properties of this Nd^3+ doped laser ceramic raw materials were proposed. The size of the prepared powder was uniform and mainly about 65 nm. The GSGG phase could be obtained after a heat-treatment of 1000℃ for 4h, and the characterized fluorescence decay curves showed that about 1 at.% concentration of Nd^3+in Nd^3+:GSGG precursor presented optimum fluorescence intensity at 1.06μm waveband.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 91122021,90922003,50932005,61008021 and 10804068。
文摘Er^(3+)-doped and Yb^(3+)/Er^(3+) co-doped Gd_(3)Sc_(2)Ga_(3)O_(12) (abbreviated as Er:GSGG and Yb,Er:GSGG,respectively)laser crystals are investigated by using a combination of spectroscopic measurements and thermal characterizations.An absorption peak of Yb,Er:GSGG crystal shifts to 970nm and its absorption band broadens obviously,which makes the crystal suitable for pumping by a 970nm laser diode (LD).This crystal also exhibits a shorter lifetime of a lower laser level,a larger emission cross section and higher thermal conductivity than those of Er:GSGG.All these factors suggest that Yb^(3+)/Er^(3+) co-doping has a positive effect on improving the spectroscopic and thermal performances in GSGG based laser crystals,and imply that double-doped Yb,Er:GSGG crystal is a potential candidate as an excellent LD pumped 2.79 μm laser material.
基金Project supported National Natural Science Foundation of China(60478025,50472104)
文摘During the crystal growth of Nd,Cr∶GSGG by Czochralski method,in some cases eutectic reaction occurred in the nether region of the crystal,and the boule was divided into two obvious different parts,which is upper Nd,Cr∶GSGG crystal and the nether coexisting Nd,Cr∶GSGG and GdScO_(3).By X-ray powder diffraction,the structure change of NdCr∶GSGG crystal ofΦ27 mm×120 mm with eutectic along its grown direction<111>was studied.By the least square method and extrapolation function f=sinθ-sinθ^(1-t)(t is an adjustable parameter),the lattice parameters of Nd,Cr∶GSGG and additional GdScO_(3)phase were computed.The results indicate that the lattice parameters of Nd,Cr∶GSGG increase along its growth direction,which changes from a=(1.25650±0.00007)nm of the top to(1.25798±0.00010)nm of the bottom.In the process of Nd,Cr∶GSGG growth,Gd^(3+)in Nd,Cr∶GSGG is partly replaced by Nd^(3+)with larger ionic radii,and the volatilization of Ga component results in its composition variance,which cause the lattice parameters increase along growth direction.In the eutectic section,there are the Nd,Cr∶GSGG and the second phase orthorhombic GdScO_(3).The lattice parameters of GdScO_(3)are a=0.5443±0.0007,b=0.5699±0.0005 and c=(0.7865±0.0009)nm,and that of Nd,Cr∶GSGG is(1.25798±0.00010)nm.In the final growth stage,excessive volatilization of Ga composition during the crystal growth causes the growth melt deflect of the Nd,Cr∶GSGG solid solution range seriously,and results in the eutectic reaction,and the outgrowth of Nd,Cr∶GSGG and GdScO_(3).So it is necessary to decrease the effect of gallium volatilization during the growth in order to avoid eutectic growth and obtain a high-quality Nd,Cr∶GSGG.
基金financially supported by the fund of The State Key Laboratory of Solidification Processing in NWPU (No. SKLSP201704)
文摘This paper explores a new laser working material: gallium scandium gadolinium(GSGG), which was successfully prepared by one step co-precipitation method, and the potential properties of this Nd^3+ doped laser ceramic raw materials were proposed. The size of the prepared powder was uniform and mainly about 65 nm. The GSGG phase could be obtained after a heat-treatment of 1000℃ for 4h, and the characterized fluorescence decay curves showed that about 1 at.% concentration of Nd^3+in Nd^3+:GSGG precursor presented optimum fluorescence intensity at 1.06μm waveband.
